TW454281B - Method and apparatus for enabling conventional wire bonding to copper-based bond pad features - Google Patents

Method and apparatus for enabling conventional wire bonding to copper-based bond pad features Download PDF

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Publication number
TW454281B
TW454281B TW89106196A TW89106196A TW454281B TW 454281 B TW454281 B TW 454281B TW 89106196 A TW89106196 A TW 89106196A TW 89106196 A TW89106196 A TW 89106196A TW 454281 B TW454281 B TW 454281B
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TW89106196A
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Hugh Li
Diane J Hymes
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Lam Res Corp
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Description

登明之領逾 屬化ίΓ明之領域係關於薄膜處理’尤其關於採用銅基金 匕技術之半導體積體電路的處理技術之領域。 知技術之描诚 以竹Ϊ ΐ造高級的半導體裝置時，銅（CU)開始取代紹（Α1) 、:為金屬化之材料。Cu已經變成受歡迎的材料，此乃由 H =比較時’ CU具有較低的電阻率與大幅改善的電致 遷移哥命之緣故。 -之标之一個問題包含原始氧化層形成於 氧化自由的空氣環境中，已經報導銅 鋼氧：内成長了2°埃；而在水中環境之内， H匕層在第-分鐘之内成長了50k。通常，這些原始氧 ς 7不被期望的。亦即，當銅區域在 地減少電導…，銅基冶被期望 控制與/或處理方法，係业型地用=特有的…先、環境 氧化層成長之影響力，控制緩和或至少限制 一個特定的問題領域，将Mm 入/輸出U/ο)連接至與其相關之封裝晶片作輸 銅基金屬化技術具有鋼焊墊蛵驗 aJ：T•墊。具體言之， 係由於銅焊墊上之相當厚的 此問題 -般而言’-條配線會如圖丨所示=成合長^ 4 5 4^81 五、發明說明（2) 1A，穿過係具有形成於毛細管尖端1〇5&之球體1〇2a之一條 (典型上是採用金（An)或A1)配線1〇 4a之一毛細管l〇la，係 位於一晶片焊墊103a之中心，且（現在參考圖1B)對著焊墊 1 0 3 b的面被押入。然後，一般而言，熱超音 (thermosonic)或熱壓縮（thermocompressive)能量係被施 加於毛細管尖端1 〇 5 b，以將球體1 〇 2 b予以黏著至焊墊 103b °如圖1C與1D所示，在球體丨〇2c被黏接至焊墊1〇3c之 後，毛細管101c移動至一封裝引線1〇6，於該處使得配線 104d隨後楔形接合至封裝引線丨〇6。 不幸的是’在標準的製程中，在球體1〇2&與焊墊1〇3a ( 接觸之前，一層原始氧化層（未顯示於圖1A)係形成於銅焊 墊1 0 3a之上。原始氧化層避免一種接合形成於配線與基本 銅焊墊之間。良好的接合典型地顯現出球體丨〇 2與焊墊1 〇 3 間之一種金屬間化合層。 如上述所探討的研究，原始氧化層係在施加球體丨〇 2 至焊墊103之前形成。典型上，標準的製程在半導體晶圓 之内連線構造之最後（或最高）之金屬化層後，立即形成焊 墊構造。在形成最後之金屬化層之後，金屬層係被拋光 (例如藉由化學機械拋光（CMp))至特定之厚度範圍。 f拋光之後’清洗半導體晶圓以從晶圓表面移除不必 要的微粒，大部分的微粒乃形成於先前的拋光步驟。形 於拋光後與清洗前之天然接合墊氧化層可能藉由清洗處理 而被移除’其乃取決於使用之清洗化學劑。在清洗之後， 半導體晶圓係被乾燥、測試、與切割。然後，每個的晶粒
第6頁 4 5 4¾ 8 1 五、發明說明（3) ___ 係被置放於一晶片搬運機，並在y線 在高溫下被環氧化成一晶粒封裝。接σ耘序開始之前， 上述之整個"後段清洗"製程導 一氧基環境中，並超過實質上的塾於室溫暴露於 此，在不將昂貴的複雜度引入至對二。因 :而"，-種方法乃執行電漿蝕刻，然後、、心fi程〔舉 一種金屬膜配線層（例如Ni );緊拉—二况積相虽厚的另 二沉積層〕的情況下，難以备f者沈積鈀與/或金之第 墊上。 免原始氧化層成長於露出焊 因此，需要一種右 控制原始氧化層成長。P嚙成本的方法，以在銅焊墊上 【發明概要】 一種用以從—表$ # 5秒之内，開始塗敷一除一氧化層，然後在氧化層移除 明於下。此表面可处a蠖層至此表面之方法與設備係說 面。移除氧化層可人鋼表面，其可更包含一焊墊表 液。塗敷保護斧可採用包含擰檬酸酸或鹽酸之溶 之溶液，：中:二包含採用包含-氮二烯伍園族之成員 方法亦可更包含在園族成員可更包含BTA。上述 3 5秒。 °塗敷之後’完全地塗敷保護層持續 【較佳實施例之說明】 以下說明用以處理曰 处理Ba圓之方法與設備。於以下之說明
五、發明說明（4) 中，提出許多細節，例如：門 等。然而’對於熟習本項技4 J離、模型之型式 可能不在這些具體的詳細 ^理解到’本發明 !知之構造與裝置係以方塊圖顯示：非口：， 造，以避免將本發明模糊化。非顯不其坪s構 於一實施例中，製造能士兩/ + & 有權成本，係以說明於下之=技\鋼基金屬化技術之所 乃連續地氧化層形成，故說改良。因為銅 氧化層成長所導致之有害效^ 方法與設備可控制由 於一實施例中，晶圓之邀句 化層，然後開始塗敷一伴, μ 一表面移除一氧 執矣而梦、f層至此表面（例如銅表面、焊 4)。軋化層可能藉由採用擰檬酸 至此表面而移除。保護層可能藉由採用―種^液= 而被塗敷，其巾，溶液係為η文至此表面 H 例中，保護層係在氧化層移除之5秒内 被塗敷，並在在開始採用之後幾乎35秒完成。、 ^實㈣巾’塗㈣護層係藉^帛1子與被提 供 刷子之液體（例如一濕式化學劑）而執行。這種技術 係同等適合於线其他H實㈣巾，液 ==此層。於一實施例中，刷子可能為地設 计供刷子擦洗用之一晶圓處理系统之一邱 八％ / :至刷子之核心部，以供經由刷子之化學；送 思到並非需要經由刷子之化學運二 乂 如刷子之上，藉以執行塗數動作。液體可施滴落至例 五、發明說明（5) 本發明之這些與其他實施例可能依據下述的教導而實 現’很明顯地，在不背離本發明之較寬的 =實 下，各種不同的修改與改變可能在以下的教 : ，，說明書與圖：係J視為例示性，而非 ： 發明之範圍僅能參照申請專利範圍而論。 设巧 ^ 舉例而言’雖然探討以下係大部:針焊 到，本教導之較寬的範，可能被地理解 性的與/或不必要的氧化層形成所影響之1枯’”易文腐蝕 而言，磁性紀錄或磁光基處理同樣過屬^例:例 層沈積膜的成長。再者，於此昶道遭^到不必要的氧化 材料（除了銅以外）之半導體基處用於使用其他 或不必要的氧化層成長。又，於此之教以 封裝技術（除了弓丨線接合以外^教^可應用至其他 球形柵極陣列與引線柵極陣列技翁。1裝曰曰片技術、 焊墊係典型地於形成内連線金屬化 j。因此，最小量的破裂係在後CMp晶之主最後一層之後形 ^採用-種刷子洗㈣„ =驟之後， 除氧化層並沉積保護層。如果氧化製程中，以移 f ’係在測試晶圓之後或正好在引線接：與保護層塗敷方 會對整體製程導致最小數量的：JJ線接合之前被執行，亦 方法==7^^^，裝4清潔—晶圓之典型的 圖2顯不-例示的刷子洗條洗條裝置(亦 454^81 : \_ _丨丨 麵 ^_ _ 五、發明說明（6)^ ' " " 以系統表示）。洗滌洗滌裝置包含複數之站。每各該站典 型地表不在晶圓清洗處理中之一個或更多步驟。受污染的 晶圓（或基板）係於系統之一端被裝載，且乾淨與乾燥的基 板係從系統之另一端被卸載。亦即，受污染的基板係被裝 載進入一晶舟盒280，然後晶舟盒28〇被置於濕式傳遞索引 站210中。在晶舟盒280被置於濕式傳鸡索引站21〇之後， 基板係自動地從晶舟盒2 8 0被移除且一次一個地被置於外 部刷洗站2 2 0中。 於外部刷洗站2 2 0中，一基板係處理經由一第一洗 滌]一般而言，在第一洗滌期間’基板係被一種溶液（例 如氫氧化錢（N & Ο Η)，H F或S C1)處理。此溶液係經由複數 之刷子221而被塗敷至基板。基板本身在複數之刷子221之 下可旋轉’以協助執行塗敷溶液。晶圓通常經由從刷洗站 之一端運送晶圓至另一端之硬體，並横越刷洗站2 2 〇， 2 30 〇 然後，洗滌的基板自動地從外部刷洗站22〇移除，且 被置於内部刷洗站2 3 0。大部分的洗滌洗滌裝置能於5秒内 或更短時間’從第一站運送晶圓至第二站。於内部刷洗站 2 3 0中’基板係經由一第二洗滌而被處理。又，在第二洗 梅期間，晶圓係受到另一種溶液（舉例而言，稀釋的i敗 酸（HF))之處理。如在第一洗滌步驟中，溶液係經由複數 之刷子2 31而被塗敷至基板上。在第二洗滌之後，基板接 著從内部刷洗站230自動地被移除且被置於沖洗、旋轉與 乾燥站2 4 0。基板係然後被運送至輸出站2 5 〇，接著被置於
第10頁 4 5 8 1 五、發明說明（7) 晶舟盒281中。 用來洗滌晶圓與塗敷各種不同的溶液之例示的刷洗設 備3 0 0係顯示於圖3。一種溶液係典型地為一種液體（例如 去離子（DI )水與酸）以上之混合物，圖3之實施例可經由供 應線3 1 0與3 2 0提供液體。各種不同的液體可能相繼地被塗 敷，亦即，一次塗敷一種；或者是同時塗敷。供應線3 i 〇 與320進入到運送管37〇。運送管37〇以預定的流動速率傳 送溶液進入刷子340之中空的核心部33〇。供應線31〇與 320係因此以流體之方式連通刷子核心部33〇。通常，當刷 子340上之溶液飽和時，其係藉由旋轉裝置36〇而旋轉。 旋轉裝置360驅動刷子34〇以順時針（反時針）方式旋轉， 經由插槽或開孔350塗敷溶液至基板。因為刷子34〇 係與晶圓接觸之溶液係被塗敷至基板。關 於刷子擦洗技術之更詳細之細節可從美國專利第 半導體基板之方法V設備』 吏用氫氟酸(HF)清洗 備，Lt加ϊ ΐ ί::二：：之核心部之其他刷子擦洗設 咖子，其因此’這種設備亦採用 之設備型式為何（田奸=士二、、敷，谷液至晶圓。不管所採用 鋒液體至一刷子疋或〜由一刷子流動液體之系統，抑或是 子塗敷液體之設備表曰_曰圓 糸統），兩者都可能以一刷 潤濕之故。 不，此乃因為刷子係被兩系統之液體 以下之探討說明 可採用各種不同的方法與設備，以處
4 5 4^ 8 1 五、發明說明（8) 理一個或更多問題’例如產生於半導體丨C之銅焊墊上之氧 化層形成問題。一般而言，參見圖4，原始氧化層4〇 j係首 先從焊墊40 2被移除（如圖4A與4B所示），然後，一保護層 403立即（亦即，在5秒或更短時間之内開始）形成於焊墊 402上（如圖4C所示）。因為保護層覆蓋焊墊，故其避免原 始氧化層形成在運送與下游處理期間（例如測試、切宝、 熱回火等）。再者，保護層係設計成使配線接合部4〇4°在 其接合時，可能經由保護層而接合至銅焊墊（如圖4D與鈍 所示）。如此，保護層亦並不大幅地阻礙形成於配線接合 =銅焊墊之間的接合之完整性。保護層係因此為原 化層形成之阻絕，此可允許引線接合。 厘译ίΐΐ免原始氧化層形成於焊塾上，保護層具有足夠 旱又/、枪度以適當地避免氧環境與銅作 化声成：勒：之程度）。因11匕’厚度與密度具有由氧 定之第二界限。 帛界限與由弓1線接合動態所決 層之層ΐ與黏著劑與/或阻障層不同。黏著劑 屬膜配〖μ例如接合部之前沉積於鋼焊墊上之前述金 配線接合部本身之間之過渡2。：：劑：係為在銅焊墊與 S’其最終促進配線接合部之整體機 運接至曰曰拉。然而，因為黏著劑層係慎重地被使用以
第12頁 4 5 8 1 -_Zk.___^____ 五、發明說明（9) 避免在銅焊墊與配線接合部間之直接接觸，故其必須能導 電。在不橫越黏著劑層之情況下，黏著劑層使電流並不直 接從焊墊流動至配線接合部，或從配線接合部流動至焊 塾。 比較而言，於此所探討之保護層係設計成藉由引線接 合處理而被打孔貫通。因此，在配線接合部與傳導焊墊之 間存在有某些直接接觸。因此，關於保護層，電流可能或 無法流經保護層’此乃因為至少某些電流直接從焊墊流動 至配線接合部，或從配線接合部流動至焊塾。 ，如所探討的内容，在最後的金屬化及與其相關的拋光 之後，晶圓係典型地更受到清洗、乾燥、測試、切判與熱 回火。在切割個別的晶片之後，每一個係典型地被7/置二 ^晶片搬運機，然後，在引線接合之前被環氧化至1封、 ，、。原始氧化層可能被移除，且保護層可在前述^ —被塗敷至任何地方。舉例而言’在測試之後，曰二 受到-氧化層#除步，驟’接著是一保護層塗敷可肊 备如上所探討的，原始氧化層急速地形成於山 氧（例如空氣或水）之環境之銅上。因此，^出於包含 —旦原始氧化層被移除，應儘可能快速塗=雜環境下， 少原始氧化層再成長。X，原始氧化層可处於護層，以減 /或低壓環境下被移除。若缺乏環境中之氧％; 一種無氧與 =法成I，允許在移除原始氧化層與’ ^原始氧化 韦的延遲時間（設置於維持無氧一段延遲保噢層之間較 如前所探討的，移除氧化層步驟與/之環境）。 笙敷保護層可能
五、發明說明（10) 以任Ί習知技術之方法（例如 成 3之說明:作為移除氧化層與塗敷保護層參考圖2與 包含經由洗條刷子塗敷溶液之至少義可能 之旋轉速度（亦即，刷子速度） ^數· 1 )刷子 子力量），其乃與刷子超過曰;)圓之2)/;子二剪力（亦即，刷 型/形狀典型地相關；3 )用以在“ G ^刷毛之類 之速度（亦即，滾轉速度）；4) 一曰疋轉日日圓之滾轉 =，處理時間);5)被塗敷;曰複數= = :速率(亦即，流動速率）；6)溶液組成物與 液之各種不同的濃度；最後是7)溫度。、塗敷之特有洛 時間=二！：：:=而！，滾轉速度與晶圓處理 轉速度與晶圓處理時間，係於=數目。說明於此之滾 塗敷將移除鋼原始氧化層與 :以=積一薄膜層(例如保護層)至:=子擦Τ 之形成”4 :::: 超薄層(例如2°埃或更薄） 然而，如剧所論’可能改變製程以獲得厚度在 ^54^81 五、發明說明（11) 2 0k上下之層。又，超薄層係以—種濕式化學處理（亦即， 採用液體至一晶圓處理）建立。一般而言，濕式化學處理 (例如喷灑或洗滌）產生微米級之薄膜厚度。因此，在一刷 子擦洗系統之内使用一刷子作為塗敷材料層之裝置具有複 數之獨特貢獻。與此相符的是，圖2之設備亦可被視為只 是一種對於一刷子擦洗系統之刷洗系統。 於大部分的狀態下，晶圓在CMp之後需要清洗（使用上 述之刷子洗滌洗滌裝置）。氧化層移除與保護層塗敷步驟 可能在此晶圓清洗步驟之後立即採用。於此實例中，晶 可能在它們從輸出晶舟盒281被移除之後立即重新置入至 晶圓輪入晶舟盒280 (簡要地參見圖2)(此系統已經正 行後CMP晶圓清洗）。X ’目前之工業趨勢係整合⑽拋 =與刷洗*統。整合之*統可或無法禁止日日日圓刷洗先 再使用（取決於刷洗站輸入晶舟盒之存取能力）/旲一 ^ 的刷子擦洗之使用，分離式獨立刷子洗 “洗滌裝置可此被採用以實現前述之方法。於 此杏， 二中’如前所述’氧化層移除與保護層塗敷可；二^ 其他製造階段中，例如正巧在晶圓測試之後於 接合之前或在包含這些處理步驟之重做週期線 他可能的實施例中，可能需要在最高的金屬液面’其 一或第二金屬層）之下鈍化銅之金屬化。 ^第 以作這種塗敷方式。 發明亦可被用 原始氧化層必須在塗敷保護層之前被移。 層可能藉由不同的化學溶液而移除。通常_化 纖或其他溶液 第15頁 4 5 4^8 1 玉、發明說明（12) 係於DI水中稀釋。舉例而言，於DI水中具有濃度〇. 2%與 .0之ph值之擰檬酸酸，於DI水中具有濃度〇· 1%之鹽酸、 (HC1)，於DI水中具有濃度0.2%之蘋果酸，或於DI水中具 濃度之丙二酸皆可使用，其中，濃度種類係為重量 ^度等級。再者，每一個濃度等級可能隨著例如待移除之 佑ϊ ΐ ί厚度或期望之處理時間而改變。因此’其範圍分 少廣如0. 0 0 5%至〇. 5%的檸檬酸、蘋果酸與丙二酸， ::可使用o.01m2%iHcl。再者，上述之任一種溶液可 1 ^ = 一步地缓衝（亦即，亦增加）100 ppm以成0.2%的氫 其他用以移除氧化層之習知溶液亦可採用。 清洗=與溶液流動速率，可能為目前在標準的晶圓 50Π處1例如處理時間為35秒且溶液流動速率為 a ^ η所採用之典型數值。一般的觀念係為晶圓膺遭 液一段足夠時間，以實質上移除氧it = 之Ϊ =化層之ΐ之材料導致損壞過度蚀刻效應與晶圓 ^此種指導方針亦延伸至上述的酸性濃产箄
:應::至言，較㈡L 能代表那些用來作氧數'轉速度與力量可 rpm、40 rPm與2.5 lbs。x f參數，例如分別是12〇 係適♦的接彳址、 ’這些參數之各種不同的範圍 化層）或太過腐蝕性（導致a n ^動（導致蝕刻不足的氧 從室溫至5 0度之？=;:【f特徵損壞）。溫度可能是 又氧化層移除與溫度之關係一般 第16頁 1 4 5 4^8 > 五、發明說明（13) 而言是：溫度越高移除迷率越大。 在移除氧化層之後，塗敷保護層。然而，在探討使用 於刷洗站之内以塗敷此層之特有的製程參數之前，關於運 送晶圓之動態之簡短探討將是有益的。如所探討的，於銅 上之原始氧化層具有很積極成長速率。本質上，在有氧之 環境下（例如在刷洗站内之自由空氣環境），氧化層開始在 它們被清潔之後立即成長。如此，理想上是可使在移除敦 化層與塗敷保護層間之時間最小化。如所探討的，大部分 的洗滌设備能於5秒以内，將晶圓從第一站運送至第二 站、。一般而言，可達成的最快運送時間應被採用。根據經 驗法則，運送時間應該消耗5秒以内。然而，如前所述， 此時間期可能取決於殘留於表面上之钱刻齊丨之數量而延 伸0 於一洗滌系統中，在晶圓下之硬體上，晶圓從第一 (亦▲即’氧化層移除）刷洗站2 2 〇水平地移動至第二（亦即， 保護層塗敷）刷洗站2 3 0 (簡要參照圖2)。亦即，告曰圓 第-站220移動至第二站23。時，晶圓表面係垂直:曰曰重圓:之 =向。又，因為晶圓係典型地"正面朝上"（意味著此置 i Ϊ f Ϊ係面對洗務洗務裝置之上部的刷子），且因為刷 曰糸在日日圓被運送至第二站之前，從晶圓表面被移除.告 日曰圓從第-刷洗站移動至第二刷洗站日夺，氧化層移除溶： 上、。St用一於第一刷洗站之溶液)之塗佈殘留於晶圓表面 适具有一種有利的效果，此效果將說明於下。 如果當晶圓離開此站時’複數之刷子殘留於晶圓表面
第17頁 五、發明說明（14) 上，則氧化層移除溶液將從晶圓上被抹 溶液從複數之刷子終止流動的狀態下更是举’特別是如果 從表面被擦拭掉，則複數 2 =如果溶液 中，立即導致不受期望的氧化層成長會=於2大氣 圓開始離去之前，特定的洗務系統（例如來自為^在晶 之SynergyTM刷子洗滌洗滌裝置）在第一 rak糸統 數之刷子，使晶圓未被擦拭乾淨，在晶J圓先站中僅升高複 氧化層蝕刻溶液之保護''膠泥(puddie)f表c-層 滌站間運送之期間會阻礙氧化層形成。 /、在aa圓於洗 因此，需要於晶圓表面上殘留惫 因為其在氧化層移除與保護層塗敷 液，此乃 移除，則保護層應儘快或儘可 ^二時—旦氧化層被 層應在氧化層移除步驟的5秒之内被H —般而言，保護 設定應被設定成以在各站間運送 因此，設備之 應提供某種超過此時間之裕声。θ日圓'疋蝕刻劑之膠泥 另一種可選擇的方法θ 移除溶液與保護層溶液兩；都可站J内’氧化層 移除溶液係首先以一第一 、主敷。亦即，氧化層 一站刷子促使保護層溶二被塗敷，然後以相同的第 第二站，⑪此種方法簡。因為晶圓並不需要通過 敷與保護層溶液之塗敷間=2。再者，在移除溶液之塗 圓從第一洗條站運送至序’不再受限於對應於將晶 繼續以"兩個站"之站之硬體。 之方法作為例子說明，一旦晶圓進λ 45m81
五、發明說明（15) 以：站，-種溶液立即被塗敷(經由複數之刷 :至Π墊表面之後，轉換成-種固態的、穩定的保； 2 1亦可以一薄膜表示。一般而言，溶液化學係包含 唑(ΒτΤη伍：私之複數成員。一氮二烯伍圜（例如苯並三 f(BTA))，係被熟知以提供對抗於銅上之複數原始氧化層 成長之保濩。BTA係為目前最廣泛地被使用於銅的保護 $，且其係為用來避免銅氧化層之多數商業上可利用的溶 液之主成分（例如來自應用化學科技股份有限公司
Applied Chemical Technologies, inc )之St〇p〇xTM)。 其他被使用以作為避免銅氧化層之一氮二烯伍圜包含引 唑、苯並咪唑、引朵（Indole)與甲基苯並三唑。再者，因 為P C基板（P c B )技術採用複數之鋼内連線，故基於三氮二 烯伍圓與咪唑（使用於PCB製程之〇rganic it;
Pservatives (OSPs))之保護層化學劑亦可使用。 依據一種化學反應’BTA舆其他之一氮二烯伍圜會形 成一保護層。在化學反應之前，純BTA (或稀釋的BTA溶 液）係處於一種液體狀態。然而，在暴露至銅時，於銅上 導致一種固體保護薄膜之化學反應之生成物。微粒係為固 相（包含高分子）之任何物質。這些微粒形成保護層。關於 BTA，化學反應係通常表示為：
Cux0 + BTA/H — [Cu-BTA]n + H20 (方程式1) 其中’ [Cu-BTA]n係為固態的薄膜材料，而cUx〇係被認 為是起因於Cu與分解的〇2之反應。 如所探討的，保護層之厚度可具有需要實質上避免更
第19頁 q 1 — —-- 五、發明說明（16) 進一步的氧化層成 = 透明性之最高界限界限，與需要維持接合製程之 數（例如頻率咬日寺π / σ又的接合所需要之特有接合參 之保護層厚度二合工f製造心^ 層厚度（或厚度變化）& _ = ^發一般而言，可能隨著保護 各種不同的接合工而需要更多的接合能量。因為 其他參數），所以二Λ 更多或更少能量（與/或改變 之特有接人工具 層厚度之上部接合可取決於所採用 f最/界限’ ΒΤΑ保護層的成果係關於另一種重要
層專”了厚度以外）：密度。高度多孔性的ΒΤΑ之J r :疋一種不可接受的保護層’此乃因為氧將ΒΤΑ膜中之 左由毛細孔而與銅焊墊接觸。因此，密集的（亦即，低多 ==)BTA之薄膜係為期望的。薄膜多孔性係與所採用 筮佈技術（例如所使用之刷子型式、刷子速度、流動速率 寺）相關。一般而言，在整體晶圓表面上促進BTA覆蓋範 圍’而非有斑點的或有污點的覆蓋範圍之技術係會減少 孔性。 . 夕 與此相當的是，BTA薄膜密度係與溶液中之BTA浪度相 關。一般而言’較高的BTA濃度傾向於在晶圓表面上提&供 較好的BTA覆蓋範圍，以產生較密集的薄膜。較高的βΤΑ渡( 度亦產生較厚的薄膜，此乃因為表示於方程式1中之反應 可得到更多BTA。因此，較高程度的BTA濃度產生較大厚度 (不被期望的）之密集的薄膜（期望的）。 a 為了利用較高的B T A濃度之益處（亦即，多密集的薄
81 ----- 五、發明說明（17) 能)損JV寺降低或甚至使較高BTA濃度(亦即，厚薄膜)之潛 應心f小化’ BTA塗佈均勾性應受到控制。因此，不僅 2 2 進ΒΤΑ覆蓋範圍（亦即，確保至少最小數量的ΒΤΑ 個晶圓表面上)之技術，所採用之技術亦應促 量之_ / (亦即，使整個晶圓表面上之ΒΤΑ覆蓋範圍之數 置之變化最小化）之均勻性。 伴持2個晶圓表面上之濃縮ΒΤΑ之均句塗佈，係有助於 下、持：度變薄，同時確保密集的薄膜，此現象將探討於 數薄腹Ζ ί持可接焚的密度程度，未顯現良好均勻性之複 的ΒΤΑ::於需要較高的ΒΤΑ濃度。高濃縮溶液之非均句 的薄膜覆區^範^吏某些晶圓區域露出至大量之ΒΤΑ(產生厚 ^ m "，並使其他晶圓區露出以調變ΒΤΑ之數量（產生 在。；，薄狀 與較薄二it ，因為bta濃度高，故較厚 =么薄膜區域傾向於阻礙以引線接合】；=長’ 因此，成功地塗敷一保護層薄膜，係取 目標BTA薄膜厚度（小於或等於2〇k) 、、〜曰； 性綱濃度等級與製程參數之組合。 主要經由確保包含BTA之溶液之均 /圍 ;高=圓與刷子旋轉速度，可達成均^的^達液成塗佈错由 又刷子之形狀會影響均句性。舉例而言，與具有小節塊 第21頁
(nodule)之刷子比較而言，平的刷子可導致更整體的與 部的溶液均勻性。 局 於實施例中’ 一保護層塗敷製程係以下述條件實 現：於DI水中5 0 0ppm之BTa濃度與7〇之汕值；5〇〇 c c / m i η之溶液流動速率；一個具有小節塊之刷子與1 2 〇 pm之刷子速度，4〇 rpm之滾轉速度；3$秒之晶圓處理時 ，，1/ 5 lbs之刷子力量，與25 t之溫度，導致可接受之 密集薄膜，此薄膜厚度係橫越過整個晶圓的總厚度而在 1 5-20埃間改變。保護層厚度之最小界限係可滿足，此乃 因為其係足夠厚以避免氧化層形成。再者，因為薄膜係足（ 夠薄以促使引線接合，故可滿足最大界限。 在另一個實施例中，一保護層塗敷製程係以下述條件 實現：於DI水中i 〇0ppm之BTA濃度與7. 〇之汕值，5〇〇 cc/min之溶液流動速率；一個轉速為139 rpm之平刷子； 40 rp曰m之滚轉速度；35秒之晶圓處理時間；丨.5 ibs之刷 子力量與25 t之溫度，導致可接受、15埃之密集薄膜，此 薄膜厚度係橫越過整個晶圓的厚度作小幅改變。 於上述兩實施例中’在測試樣品之高溫硬化期間，非 實質的氧化層成長（10-40埃）係產生於]gTA層之下。 最後，如所探討的’氧化層之移除與保護層之塗敷並（ 不需要需要刷子擦洗設備。此製程在最後的(：^?晶圓清潔 步驟之後亦不需要立即執行。舉例而言，氧化層可能藉由 浸泡（例如洗滌）製程或藉由喷灑製程而被移除。 a 洗務包含完全地將晶圓浸泡於一種氧化層蝕刻劑溶液
1 五、發明說明（19) 一 :之ΪΪ之=、濃度、溫度與授 ，常與洗條洗條裝置系心使= ί從決於溶液之濃度與採取的= 所熟知，所以具體的製程參數可輕易地決定、。技-者 而移二，二上:八氧化層可能藉由-種酸液噴灑動作 灑動作相ΪΪ作：3以一種蝕刻劑溶液噴灑晶圓。虚喷 ，麗動作相關的製程參數包含：溶液 /、赁 J線流動速率，喷灑角⑨，喷灑溶液中ΐ:产，、時門：液 灑之氧化層移除=為 保護層亦可藉由除數亦可輕易地決定。 製程包含:浸泡(例如洗條)：2 :塗5。這些 轉塗佈包含時間、旋轉 貫質上相同的參數。旋 者，因為藉由這此方法之：數：動速率與溶液濃度。再 藝者所熟知之技；，因;；之塗敷係為熟習本項技 易決定。 b ”體的製程參數亦可同樣地被輕 非製=在統以外之處理技術(而且除 在氧化層被移除之後塗；in:呆儘可能的 好的經驗法則。再者，亩者，在5和之内係為一種良 飿刻劑殘留於晶圓表面h 許氧化層 應可同樣地擴充在氧化層移除 第23頁 464^81
第24頁 斗5續8 1 _____ 圖式簡單說明 本發明之說明係為舉例性說明，並未限制於附圖中， 類似的參考數字表示類似的元件，其中： 圖1 A至1 D顯示一種典型的引線接合製程。 圖2顯示刷子擦洗系統之一例。 圖3顯示使用於圖2之刷子擦洗系統内之刷子之一例。 圖4A至4E顯示一種用以形成接合至一銅表面之配線之 方法。 【符號之說明】 101a、101c〜毛細管 102、 102a、102b、102c~ 球體 103、 103a、103b、103c〜焊墊 1 0 4 a、1 0 4 b ~ 配線 105a、105b〜毛細管尖端 106〜封裝引線 210〜濕式傳遞索引站 2 2 0〜第一刷洗站 2 2 1 ~刷子 2 3 0〜第二刷洗站 231〜刷子 2 4 0〜沖洗、旋轉與乾燥站 2 5 0 ~輸出站 2 8 0〜晶舟盒 2 8 1〜晶舟盒
4 5 8 1 _2_ 圖式簡單說明 3 0 0〜刷洗設備 3 1 0、3 2 0 ~供應線 3 3 0〜核心部 3 4 0〜刷子 3 5 0〜開孔 360〜旋轉裝置 370〜運送管 401〜原始氧化層 4 0 2 ~焊塾 4 0 3〜保護層 4 0 4〜配線接合部
第26頁

Claims (1)

  1. 4 5 8 1 i 案號 89106196 修 Μ 月 修正 六、申請專利範圍 wTa 包含以 a) b) 表面。 2. 含一銅 3. 包含_ 一 4. 層之步 5. 層之步 6. 層之步 液。 7. 伍圜族 8. 在開始 9. 包含： 塗 以 1. 一種可使習用引線接合達成銅基焊墊特色之方法 下步驟： 從一表面移除一氧化層；以及 在移除該氧化層5秒之内，開始塗敷一保護層至該 如申請專利範圍第1項之方法，其中，該表面更包 表面。 如申請專利範圍第2項之方法，其中，該銅表面更 焊墊表面。 如申請專利範圍第1項之方法，其中，移除該氧化 驟更包含塗敷含有檸檬酸酸之一種溶液至該表面。 如申請專利範圍第1項之方法，其中，移除該氧化 驟更包含塗敷包含鹽酸之一種溶液至.該表面。 如申請專利範圍第1項之方法，其中，塗敷該保護 驟更包含塗敷包含一氮二烯伍圜族之成員之一種溶 如申請專利範圍第6項之方法，其中，該一氮二烯 成員更包含BTA。 如申請專利範圍第1項之方法，其中，該保護層係 之後35秒完全地塗敷。 一種可使習用引線接合達成銅基焊墊特色之方法， 敷一液體至一刷子； 該刷子塗敷該液體至一半導體晶圓表面；以及
    第27頁 1 1 案號89106196 年 月 日 修正 _ 六、申請專利範圍 藉由在該液體與該半導體晶圓表面之間之化學反應， 於該半導體晶圓表面上形成一層。 1 0.如申請專利範圍第9項之方法，其中，該層之厚度 係為2 0埃或更薄。 . 11.如申請專利範圍第9項之方法，其中，該半導體晶 圓更包含具有敷塗金屬之半導體晶圓。 1 2.如申請專利範圍第9項之方法，其中，該半導體晶 圓表面更包含一焊墊表面。 1 3.如申請專利範圍第9項之方法，其中，該刷子係為 [ 一晶圓刷子擦洗系統之一部份。. 1 4.如申請專利範圍第9項之方法，其中，該層更包含 一保護層。 1 5.如申請專利範圍第1 4項之方法，其中，該保護層 更包含一氮二烯伍圜族之成員。 1 6.如申請專利範圍第1 5項之方法，其中，該一氮二 烯伍圜族成員更包含BTA。 1 7. —種可使習用引線接合達成銅基焊墊特色之方 法，包含： < a ) 以位於一刷子系統中之一第一刷子塗敷一第一液 體，而從一晶圓表面移除一第一層；以及 b) 以位於該刷子系統中之一第二刷子塗敷一第二液 體，而塗敷一第二層至該晶圓表面，該第二液體係與該晶 圓表面作用以形成第二層。 · 1 8.如申請專利範圍第1 7項之方法，其中，該第二層
    第28頁 ^5ή^81 > 案號 89106196 年 月 日____ 六、申請專利範圍 之厚度係為2 0埃或更薄， 1 9.如申請專利範圍第1 7項之方法，其中，該第一層 更包含一氧化層。 2 0.如申請專利範圍第1 9項之方法，其中，該第一液 體係為一種溶液。 2 1.如申請專利範圍第2 0項之方法，其中，該溶液包 含檸檬酸酸。 2 2.如申請專利範圍第20項之方法，其中，該溶液包 含鹽酸。 2 3.如申請專利範圍第1 7項之方法，其中，該第二層 更包含一保護層。 2 4.如申請專利範圍第23項之方法，其中，該保護層 更包含一氮二烯伍圜族之成員。 2 5.如申請專利範圍第24項之方法，其中，該一氮二 烯伍圜族成員更包含BTA。 2 6.如申請專利範圍第1 7項之方法，其中，該半導體 晶圓更包含具有敷塗金屬之半導體晶圓。 2 7.如申請專利範圍第26項之方法，其中，該半導體 晶圓更包含一焊墊。 2 8.如申請專利範圍第27項之方法，更包含經由該第 二層塗敷一接合劑至該焊墊。 2 9.如申請專利範圍第1 7項之方法，其中，該第一刷 子與該第二刷子係為相同的刷子。 3 0. —種可使習用引線接合達成銅基焊墊特色之設
    4 5 βΊ 案號89106196 年 月 日 修正__ 六、申請專利範圍 備，包含： 一供應線，其乃被配置以塗敷一液體至一刷子，該刷 子係位於一晶圓之表面上方，該刷子係被使用以於晶圓表 面上，以液體形成一層。 31.如申請專利範圍第30項之設備，其中，該液體更 包含一氮二烯伍圜族之成員。 3 2.如申請專利範圍第3 1項之設備，其中，該液體更 包含Β Τ Α。 3 3.如申請專利範圍第3 0項之設備，其中，該刷子係 位於一刷子系統之一洗務站之内。/ 3 4. —種可使習用引線接合達成銅基烊墊特色之方 法’包含： a. 以位於一刷子系統之一第一刷子塗敷之一第一液 體，從一晶圓表面移除一氧化層層； b. 以位於該刷子系統之一第二刷子塗敷之一第二液 體，塗敷一保護層至該晶圓表面，該液體係與該晶圓表面 作用以形成第二層；以及 c. 藉由穿過該·保護層塗敷一接合劑至晶圓表面。 3 5.如申請專利範圍第34項之方法，其中，該晶圓表 面更包含一銅焊墊。 3 6.如申請專利範圍第34項之方法，其中，該第二溶 液包含一氮二婦伍圜族之成員。 3 7.如申請專利範圍第36項之方法，其中，該第二溶 液更包含Β Τ A。
    第30頁
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US6610601B2 (en) 2003-08-26
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AU3867700A (en) 2000-10-16
US6358847B1 (en) 2002-03-19
KR100731850B1 (ko) 2007-06-25
KR20010108419A (ko) 2001-12-07
JP2002540631A (ja) 2002-11-26
EP1186022A2 (en) 2002-03-13
KR20070010211A (ko) 2007-01-22
KR100731851B1 (ko) 2007-06-25

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