JP2006077275A - 金属膜の成膜方法及び装置 - Google Patents
金属膜の成膜方法及び装置 Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/1664—Process features with additional means during the plating process
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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Abstract
【解決手段】 表面の配線用凹部に埋込み配線を形成した基板を用意し、基板の表面に処理液に接触させつつ、基板の表面に対する処理液の相対的な流動状態を変化させて、配線の表面に膜厚方向に膜質の異なる金属膜を連続的に成膜する。
【選択図】 なし
Description
これにより、例えば異なる組成のめっき液を使用した2段めっき等を行うことなく、膜厚方向に膜質の異なる金属膜を、同一の処理液を使用して連続的に成膜することができる。
例えば、CoWPやCoWB等のWを含むCo合金からなる金属膜を無電解めっきで成膜する場合、一般に、無電解めっき浴中のW成分の濃度が他の成分に比べて格段に低く、このため、基板の表面近傍における処理液の流動状態を変えて成膜される金属膜の膜質を変える際、Wの供給特性が成膜される金属膜の膜質に最も影響を与えると考えられる。そこで、基板の表面近傍における処理液の流動速度を成膜の途中で増加させて、基板の表面近傍に位置する処理液中のW成分の濃度を高くすることで、めっき後期に成膜される金属膜中のW含有量をめっき初期に成膜される金属膜中のW含有量よりも大きし、これによって、金属膜の表面粗さとパターン依存性の双方を改善することができる。
例えば銅等の単一金属からなる金属膜を成膜して該金属膜(銅)を配線用凹部内に埋込む際,基板の表面近傍における処理液の流動状態を変化させて、成膜される金属膜中の添加剤の含有量を調整することで、基板の表面に膜厚方向に、銅の配向性や抵抗率などの特性量(膜質)の異なる金属膜を連続して成膜することができる。
これにより、基板の回転速度を速くすることで、基板の表面近傍における処理液が基板に対する流動速度を速めることができる。従って、例えばW成分を含むCo合金からなる金属膜を無電解めっきで成膜する場合にあっては、基板の回転速度をより速くすることで、基板の表面近傍に位置するめっき液中のW濃度を高めることができる。
例えば、成膜処理中に、処理槽内の処理液を循環させる場合には、この循環量を変更することで、処理槽内の処理液を旋回させる場合には、その旋回流の強さを変更することで、また処理槽内の処理液を攪拌する場合には、その攪拌強さを変更することで、基板の表面近傍における処理液の流動状態を変化させることができる。
請求項8に記載の発明は、前記駆動制御系は、前記処理槽内で前記処理液を流動させる液流動装置と、該液流動装置の駆動部を制御する制御部を有することを特徴とする請求項6または7記載の金属膜の成膜装置である。
洗浄兼触媒付与装置14は、異なる液体の混合を防ぐ2液分離方式を採用したもので、フェースダウンで搬送された基板Wの処理面(表面)である下面の周縁部をシールし、裏面側を押圧して基板Wを固定するようにしている。
更に、この例では、蓋体102の表面(上面)に設けられたノズル板112は、例えば純水等のリンス液を供給するリンス液供給源132に接続されている。また、外槽100aの底面にも、排水管127が接続されている。
めっき槽200の底部付近に設けられた温度測定器266は、めっき槽200の内部に導入されるめっき液の液温を測定して、この測定結果を元に、下記のヒータ316及び流量計318を制御する。
そして、めっき処理を行うときには、めっき槽200のめっき槽カバー270を開き、基板ヘッド204を回転させながら下降させ、基板ホルダ232で保持した基板Wをめっき槽200内のめっき液中に浸漬させる。これによって、例えば、図1(d)に示すように、配線8の表面に、CoWP合金からなる配線保護膜(金属膜)9を選択的に形成して配線8を保護する。
そして、このようにして洗浄した基板Wは、スピンドル428を高速回転させることでスピン乾燥させられる。
なお、この乾燥装置20にキャビテーションを利用したキャビジェット機能も搭載するようにしてもよい。
先ず、図1(c)に示す、表面に配線8を形成し乾燥させた基板Wを、該基板Wの表面を上向き(フェースアップ)で収納してロード・アンロードユニット10に搭載した基板カセットから、1枚の基板Wを第1基板搬送ロボット24で取出し、仮置台22に搬送してこの上に置く。そして、仮置台22上の基板Wを第2基板搬送ロボット26で洗浄兼触媒付与装置14に搬送する。この洗浄兼触媒付与装置14では、基板Wをフェースダウンで保持して、この表面に、先ず、基板のめっき前処理としての洗浄液(薬品)による洗浄処理を行う。
・Na3C6H5O7・2H2O:145g/L
・(NH4)2SO4:31g/L
・NaH2PO2・H2O:18g/L
・Na2WO4・2H2O:10g/L
・pH:9.2(NaOH水溶液で調整)
このスピン乾燥後の基板Wを、第2基板搬送ロボット26で仮置台22の上に置き、この仮置台22の上に置かれた基板を、第1基板搬送ロボット24でロード・アンロードユニット10に搭載された基板カセットに戻す。
また、例えば、図1(a)に示す、配線用凹部としてのコンタクトホール3や配線溝4を有する基板Wの表面に、例えば電解めっきで、図1(b)に示すように、銅膜(金属膜)7を成膜するようにしてもよく、この場合、基板の表面近傍における処理液(めっき液)の流動状態を変化させて、金属膜中の添加剤の含有量を調整することで、基板の表面に膜厚方向に、銅の配向性や抵抗率などの特性量(膜質)の異なる金属膜を連続して成膜することができる。
比較のため、前述と同様な組成のめっき液を使用し、試料1を低速な一定の回転速度N(N=15rpm)で回転させつつ、180秒間の無電解めっきを行って、試料1の表面に金属膜(CoWP合金)を成膜した(比較例1−1)。同様に、試料1を高速な一定の回転速度3N(=45rpm)で回転させつつ、180秒間の無電解めっきを行って、試料1の表面に金属膜(CoWP合金)を成膜した(比較例1−2)。
この図20から、実施例1のように、成膜の途中で、試料1の回転速度を低速な回転速度Nから高速な回転速度3Nに変えることで、試料1の表面にW含有率が膜厚方向に異なる金属膜を連続して成膜できることが判る。
この無電解めっきに際し、前述と同様な組成のCoWPめっき液を使用し、めっき初期の最初の60秒間は、試料2を低速な回転速度N(N=15rpm)で回転させつつ無電解めっきを行い、めっき後期の後の120秒は、試料2を高速な3N(3N=45rpm)で回転させつつ無電解めっきを行った(実施例2)。
9 配線保護膜(金属膜)
10 ロード・アンロードユニット
12 装置フレーム
14 洗浄兼触媒付与装置
16 無電解めっき装置(成膜装置)
18 後処理装置
20 乾燥装置
22 仮置台
24,26 基板搬送ロボット
58 基板ホルダ
60 処理ヘッド
100 処理槽
200 めっき槽
202 洗浄槽
204 基板ヘッド
230 ハウジング部
232 基板ホルダ
234 吸着ヘッド
238 基板回転用モータ(回転装置)
290 制御部
420 クランプ機構
422 基板ステージ
Claims (10)
- 表面の配線用凹部に埋込み配線を形成した基板を用意し、
前記基板の表面を処理液に接触させつつ、前記基板の表面に対する前記処理液の相対的な流動状態を変化させて、前記配線の表面に膜厚方向に膜質の異なる金属膜を連続的に成膜することを特徴とする金属膜の成膜方法。 - 前記処理液の流動状態の変化は、基板表面に対する前記処理液の相対的な流動速度を、成膜の途中で増加または減少させることを特徴とする請求項1記載の金属膜の成膜方法。
- 表面に配線用凹部を形成した基板を用意し、
前記基板の表面を処理液に接触させつつ、前記基板の表面に対する前記処理液の相対的な流動状態を変化させて、前記基板の表面に膜厚方向に膜質の異なる金属膜を連続的に成膜して該金属膜を前記凹部内に埋込むことを特徴とする金属膜の成膜方法。 - 前記基板の表面に対する前記処理液の流動状態を、前記基板の回転速度を変更して変化させることを特徴とする請求項1乃至3のいずれかに記載の金属膜の成膜方法。
- 前記基板の表面に対する前記処理液の流動状態を、前記処理液の処理槽内の流動速度を変更して変化させることを特徴とする請求項1乃至4のいずれかに記載の金属膜の成膜方法。
- 基板を保持する基板ホルダと、
前記基板ホルダで保持した基板の表面に接触させる処理液を内部に保持する処理槽と、
前記基板ホルダで保持し前記処理槽内の処理液に接触させた基板の表面近傍における該処理液の基板に対する相対的な流動状態を変化させる駆動制御系を有することを特徴とする金属膜の成膜装置。 - 前記駆動制御系は、前記基板ホルダを回転させる回転装置と、該回転装置の回転速度を制御する制御部を有することを特徴とする請求項6記載の金属膜の成膜装置。
- 前記駆動制御系は、前記処理槽内で前記処理液を流動させる液流動装置と、該液流動装置の駆動部を制御する制御部を有することを特徴とする請求項6または7記載の金属膜の成膜装置。
- 基板の表面に複数の配線層からなる埋込み配線を形成するに際し、
表面に第1の配線層を形成した基板を用意し、前記第1の配線層の表面を処理液に接触させつつ前記第1の配線層の表面に配線保護膜を成膜する工程と、
前記基板の表面に第2の配線層を形成した後、前記第2の配線層の表面を処理液に接触させつつ前記第2の配線層の表面に配線保護膜を成膜する工程を有し、
前記第1の配線層の表面に配線保護膜を成膜する工程と前記第2の配線層の表面に配線保護膜を成膜する工程では、配線層の表面に対する相対的な処理液の流動状態または流動状態の変化の方式が異なることを特徴とする配線の形成方法。 - 前記第1の配線層の表面に配線保護膜を成膜する工程と前記第2の配線層の表面に配線保護膜を成膜する工程では、前記処理液の組成が同一であることを特徴とする請求項9に記載の配線の形成方法。
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US20080082338A1 (en) * | 2006-09-29 | 2008-04-03 | O'neil Michael P | Systems and methods for secure voice identification and medical device interface |
US20130234325A1 (en) * | 2011-04-27 | 2013-09-12 | Industrial Technology Research Institute | Filled through-silicon via and the fabrication method thereof |
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JPH04183893A (ja) * | 1990-11-19 | 1992-06-30 | Shinko Kosen Kogyo Kk | Zn―Ni合金めっき鋼線及びその製造方法 |
JPH10261635A (ja) * | 1997-03-18 | 1998-09-29 | Mitsubishi Electric Corp | 半導体装置 |
JP2003179000A (ja) * | 2001-12-12 | 2003-06-27 | Sony Corp | 半導体装置及びその製造方法 |
JP2003253488A (ja) * | 2002-03-07 | 2003-09-10 | Ebara Corp | 電解処理装置 |
JP2003293193A (ja) * | 2002-04-02 | 2003-10-15 | Nec Electronics Corp | 微細回路配線形成方法およびこれに用いる装置 |
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JPH04183893A (ja) * | 1990-11-19 | 1992-06-30 | Shinko Kosen Kogyo Kk | Zn―Ni合金めっき鋼線及びその製造方法 |
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