KR100731850B1 - 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬수 있는 방법 및 이를 위한 장치 - Google Patents

구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬수 있는 방법 및 이를 위한 장치 Download PDF

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KR100731850B1
KR100731850B1 KR1020077000028A KR20077000028A KR100731850B1 KR 100731850 B1 KR100731850 B1 KR 100731850B1 KR 1020077000028 A KR1020077000028 A KR 1020077000028A KR 20077000028 A KR20077000028 A KR 20077000028A KR 100731850 B1 KR100731850 B1 KR 100731850B1
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brush
wafer
copper
oxide
solvent
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KR20070010211A (ko
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휴 리
다이안 제이. 히메스
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램 리서치 코포레이션
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/34—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01571—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01971—Cleaning, e.g. oxide removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07118—Means for cleaning, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020077000028A 1999-03-31 2000-03-06 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬수 있는 방법 및 이를 위한 장치 Expired - Fee Related KR100731850B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/282,596 1999-03-31
US09/282,596 US6358847B1 (en) 1999-03-31 1999-03-31 Method for enabling conventional wire bonding to copper-based bond pad features

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020017012365A Division KR100731851B1 (ko) 1999-03-31 2000-03-06 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬 수 있는 방법

Publications (2)

Publication Number Publication Date
KR20070010211A KR20070010211A (ko) 2007-01-22
KR100731850B1 true KR100731850B1 (ko) 2007-06-25

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Application Number Title Priority Date Filing Date
KR1020077000028A Expired - Fee Related KR100731850B1 (ko) 1999-03-31 2000-03-06 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬수 있는 방법 및 이를 위한 장치
KR1020017012365A Expired - Fee Related KR100731851B1 (ko) 1999-03-31 2000-03-06 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬 수 있는 방법

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KR1020017012365A Expired - Fee Related KR100731851B1 (ko) 1999-03-31 2000-03-06 구리를 기본으로 한 본드패드에 종래의 와이어를 결합시킬 수 있는 방법

Country Status (7)

Country Link
US (2) US6358847B1 (enExample)
EP (1) EP1186022A2 (enExample)
JP (1) JP2002540631A (enExample)
KR (2) KR100731850B1 (enExample)
AU (1) AU3867700A (enExample)
TW (1) TW454281B (enExample)
WO (1) WO2000059029A2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002527886A (ja) * 1998-10-05 2002-08-27 キューリック、アンド、ソファー、インベストメンツ、インコーポレーテッド 半導体の銅ボンドパッドの表面保護
US6191023B1 (en) * 1999-11-18 2001-02-20 Taiwan Semiconductor Manufacturing Company Method of improving copper pad adhesion
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6790757B1 (en) * 1999-12-20 2004-09-14 Agere Systems Inc. Wire bonding method for copper interconnects in semiconductor devices
US7351353B1 (en) * 2000-01-07 2008-04-01 Electrochemicals, Inc. Method for roughening copper surfaces for bonding to substrates
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
DE10064691A1 (de) * 2000-12-22 2002-07-04 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiter-Chip und Kupferleiterbahnen auf dem Chip sowie ein Verfahren zu seiner Herstellung
US6693020B2 (en) * 2001-03-12 2004-02-17 Motorola, Inc. Method of preparing copper metallization die for wirebonding
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
TW583348B (en) * 2001-06-19 2004-04-11 Phoenix Prec Technology Corp A method for electroplating Ni/Au layer substrate without using electroplating wire
JP3761461B2 (ja) * 2001-12-13 2006-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
TWI221026B (en) * 2002-12-06 2004-09-11 Nat Univ Chung Cheng Method of thermosonic wire bonding process for copper connection in a chip
MY134318A (en) * 2003-04-02 2007-12-31 Freescale Semiconductor Inc Integrated circuit die having a copper contact and method therefor
US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
US6969638B2 (en) * 2003-06-27 2005-11-29 Texas Instruments Incorporated Low cost substrate for an integrated circuit device with bondpads free of plated gold
US7919864B2 (en) * 2003-10-13 2011-04-05 Stmicroelectronics S.A. Forming of the last metallization level of an integrated circuit
US7105379B2 (en) * 2004-04-28 2006-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Implementation of protection layer for bond pad protection
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
JP4035733B2 (ja) * 2005-01-19 2008-01-23 セイコーエプソン株式会社 半導体装置の製造方法及び電気的接続部の処理方法
DE102005033469B4 (de) * 2005-07-18 2019-05-09 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleitermoduls
DE102005034485B4 (de) * 2005-07-20 2013-08-29 Infineon Technologies Ag Verbindungselement für ein Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterleistungsbauelements
WO2007094869A2 (en) 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
DE102006044691B4 (de) 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
SG144124A1 (en) * 2006-12-29 2008-07-29 United Test & Assembly Ct Ltd Copper wire bonding on organic solderability preservative materials
SG158048A1 (en) * 2008-06-20 2010-01-29 United Test & Assembly Ct Ltd Copper on organic solderability preservative (osp) interconnect and enhanced wire bonding process
TWI452640B (zh) * 2009-02-09 2014-09-11 日月光半導體製造股份有限公司 半導體封裝構造及其封裝方法
DE102009029577B3 (de) * 2009-09-18 2011-04-28 Infineon Technologies Ag Verfahren zur Herstellung eines hochtemperaturfesten Leistungshalbleitermoduls
US9142533B2 (en) 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
CN103620753B (zh) * 2011-04-25 2017-05-24 气体产品与化学公司 清洁引线框以改善导线接合工艺
US9646923B2 (en) 2012-04-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
CN104756239B (zh) * 2012-08-08 2018-01-26 马维尔国际贸易有限公司 使用由载体铜箔支撑的薄铜箔制作封装体的方法
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same
US9012263B1 (en) * 2013-10-31 2015-04-21 Freescale Semiconductor, Inc. Method for treating a bond pad of a package substrate
JP6937283B2 (ja) * 2018-09-19 2021-09-22 株式会社東芝 半導体装置の製造方法
US11682641B2 (en) 2020-08-13 2023-06-20 Microchip Technology Incorporated Integrated circuit bond pad with multi-material toothed structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010277A1 (en) * 1991-11-20 1993-05-27 Electrochemicals, Inc. Improved method for bonding copper to a polymeric material
EP0878831A2 (en) * 1997-05-15 1998-11-18 Kabushiki Kaisha Toshiba Double side cleaning apparatus for semiconductor substrate
US5858109A (en) * 1995-10-13 1999-01-12 Ontrak Systems, Inc. Method and apparatus for cleaning of semiconductor substrates using standard clean 1 (SC1)

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS531654A (en) 1976-06-28 1978-01-09 Furukawa Electric Co Ltd Method of preventing oxidation of copper member
US4370173A (en) 1981-05-15 1983-01-25 Amchem Products, Inc. Composition and method for acid cleaning of aluminum surfaces
US4871422A (en) 1987-01-27 1989-10-03 Olin Corporation Etching solutions containing ammonium fluoride and anionic sulfate esters of alkylphenol polyglycidol ethers and method of etching
JPH02130922A (ja) 1988-11-11 1990-05-18 Toshiba Corp 半導体基板エッチング装置
DE3939661A1 (de) 1989-11-30 1991-06-13 Wacker Chemitronic Verfahren zur steuerung des einbaues von kupfer in siliciumscheiben beim chemomechanischen polieren
WO1994027314A1 (en) 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
JPH07147300A (ja) 1993-11-24 1995-06-06 Hitachi Ltd インナーリードボンディング装置
JPH08250635A (ja) * 1995-03-14 1996-09-27 Dainippon Printing Co Ltd リードフレームの製造方法
FR2722511B1 (fr) 1994-07-15 1999-04-02 Ontrak Systems Inc Procede pour enlever les metaux dans un dispositif de recurage
DE4444388A1 (de) 1994-11-28 1996-05-30 Atotech Deutschland Gmbh Verfahren zum Bonden von Drähten auf oxidationsempfindlichen, lötbaren Metallsubstraten
JPH08195369A (ja) 1995-01-13 1996-07-30 Daikin Ind Ltd 基板の洗浄方法
US5662769A (en) 1995-02-21 1997-09-02 Advanced Micro Devices, Inc. Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning
US5714203A (en) 1995-08-23 1998-02-03 Ictop Entwicklungs Gmbh Procedure for the drying of silicon
KR100269013B1 (ko) 1995-11-15 2000-11-01 이노우에 노리유끼 웨이퍼 처리액 및 그 제조방법
US5700383A (en) 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5810938A (en) 1996-05-24 1998-09-22 Henkel Corporation Metal brightening composition and process that do not damage glass
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JPH1041298A (ja) * 1996-07-23 1998-02-13 Toshiba Corp 半導体装置及びその製造方法
US5709755A (en) 1996-08-09 1998-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method for CMP cleaning improvement
US5794299A (en) 1996-08-29 1998-08-18 Ontrak Systems, Inc. Containment apparatus
US6296714B1 (en) 1997-01-16 2001-10-02 Mitsubishi Materials Silicon Corporation Washing solution of semiconductor substrate and washing method using the same
JPH113892A (ja) * 1997-06-11 1999-01-06 Ricoh Co Ltd 半導体装置の製造方法
US5935871A (en) * 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US6096652A (en) * 1997-11-03 2000-08-01 Motorola, Inc. Method of chemical mechanical planarization using copper coordinating ligands
US6051879A (en) * 1997-12-16 2000-04-18 Micron Technology, Inc. Electrical interconnection for attachment to a substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010277A1 (en) * 1991-11-20 1993-05-27 Electrochemicals, Inc. Improved method for bonding copper to a polymeric material
US5858109A (en) * 1995-10-13 1999-01-12 Ontrak Systems, Inc. Method and apparatus for cleaning of semiconductor substrates using standard clean 1 (SC1)
EP0878831A2 (en) * 1997-05-15 1998-11-18 Kabushiki Kaisha Toshiba Double side cleaning apparatus for semiconductor substrate

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US6610601B2 (en) 2003-08-26
US20020058417A1 (en) 2002-05-16
JP2002540631A (ja) 2002-11-26
EP1186022A2 (en) 2002-03-13
KR20070010211A (ko) 2007-01-22
KR100731851B1 (ko) 2007-06-25
KR20010108419A (ko) 2001-12-07
WO2000059029A2 (en) 2000-10-05
AU3867700A (en) 2000-10-16
TW454281B (en) 2001-09-11
US6358847B1 (en) 2002-03-19

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