KR100678878B1 - 집적 회로 패키지 및 그 제조 방법 - Google Patents

집적 회로 패키지 및 그 제조 방법 Download PDF

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Publication number
KR100678878B1
KR100678878B1 KR20010043826A KR20010043826A KR100678878B1 KR 100678878 B1 KR100678878 B1 KR 100678878B1 KR 20010043826 A KR20010043826 A KR 20010043826A KR 20010043826 A KR20010043826 A KR 20010043826A KR 100678878 B1 KR100678878 B1 KR 100678878B1
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KR
South Korea
Prior art keywords
integrated circuit
conductive layer
substrate
package
region
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR20010043826A
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English (en)
Korean (ko)
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KR20020008781A (ko
Inventor
콘찰레스
호크주니어도널드어리
Original Assignee
에이저 시스템즈 가디언 코포레이션
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Publication of KR20020008781A publication Critical patent/KR20020008781A/ko
Application granted granted Critical
Publication of KR100678878B1 publication Critical patent/KR100678878B1/ko
Assigned to 에이저 시스템즈 엘엘시 reassignment 에이저 시스템즈 엘엘시 권리의 전부이전등록 Assignors: 에이저 시스템즈 가디언 코포레이션
Assigned to 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 reassignment 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 권리의 전부이전등록 Assignors: 에이저 시스템즈 엘엘시
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
KR20010043826A 2000-07-21 2001-07-20 집적 회로 패키지 및 그 제조 방법 Expired - Lifetime KR100678878B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/620939 2000-07-21
US09/620,939 US6465882B1 (en) 2000-07-21 2000-07-21 Integrated circuit package having partially exposed conductive layer

Publications (2)

Publication Number Publication Date
KR20020008781A KR20020008781A (ko) 2002-01-31
KR100678878B1 true KR100678878B1 (ko) 2007-02-07

Family

ID=24488025

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20010043826A Expired - Lifetime KR100678878B1 (ko) 2000-07-21 2001-07-20 집적 회로 패키지 및 그 제조 방법

Country Status (5)

Country Link
US (1) US6465882B1 (https=)
JP (2) JP4352365B2 (https=)
KR (1) KR100678878B1 (https=)
GB (1) GB2370413B (https=)
TW (1) TW512503B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790760B1 (en) * 2000-07-21 2004-09-14 Agere Systems Inc. Method of manufacturing an integrated circuit package
DE10109542B4 (de) * 2001-02-28 2004-02-05 Siemens Ag Anordung zur Verbindung eines auf einer Leiterplatte angebrachten Bauelementes mit einer flexiblen Schichtanordnung
JP2005500638A (ja) * 2001-08-10 2005-01-06 シーゲイト テクノロジー エルエルシー 集積相互接続とその製造方法
DE10233607B4 (de) 2002-07-24 2005-09-29 Siemens Ag Anordnung mit einem Halbleiterchip und einem mit einer Durchkontaktierung versehenen Träger sowie einem ein Anschlusspad des Halbleiterchips mit der Durchkontaktierung verbindenden Draht und Verfahren zum Herstellen einer solchen Anordnung
TWI241000B (en) * 2003-01-21 2005-10-01 Siliconware Precision Industries Co Ltd Semiconductor package and fabricating method thereof
US7423340B2 (en) * 2003-01-21 2008-09-09 Siliconware Precision Industries Co., Ltd. Semiconductor package free of substrate and fabrication method thereof
US20040183167A1 (en) * 2003-03-21 2004-09-23 Texas Instruments Incorporated Recessed-bond semiconductor package substrate
US6956286B2 (en) * 2003-08-05 2005-10-18 International Business Machines Corporation Integrated circuit package with overlapping bond fingers
US7166905B1 (en) 2004-10-05 2007-01-23 Integrated Device Technology, Inc. Stacked paddle micro leadframe package
TWI286917B (en) * 2005-01-14 2007-09-11 Au Optronics Corp Thermal bonding structure and manufacture process of flexible printed circuit (FPC)
TW200703606A (en) * 2005-07-15 2007-01-16 Siliconware Precision Industries Co Ltd Semiconductor package and fabrication method thereof
US8447700B2 (en) 2005-10-11 2013-05-21 Amazon Technologies, Inc. Transaction authorization service
WO2010090075A1 (ja) * 2009-02-05 2010-08-12 アルプス電気株式会社 磁気検出装置
CN103000539B (zh) * 2012-11-16 2016-05-18 日月光半导体制造股份有限公司 半导体封装构造及其制造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4320438A (en) 1980-05-15 1982-03-16 Cts Corporation Multi-layer ceramic package
JPH01258447A (ja) * 1988-04-08 1989-10-16 Nec Corp 混成集積回路の積層厚膜基板
US5196725A (en) * 1990-06-11 1993-03-23 Hitachi Cable Limited High pin count and multi-layer wiring lead frame
JPH07112039B2 (ja) * 1991-03-14 1995-11-29 日立電線株式会社 多ピン多層配線リードフレーム
US5220195A (en) * 1991-12-19 1993-06-15 Motorola, Inc. Semiconductor device having a multilayer leadframe with full power and ground planes
JP3325351B2 (ja) * 1993-08-18 2002-09-17 株式会社東芝 半導体装置
US5490324A (en) 1993-09-15 1996-02-13 Lsi Logic Corporation Method of making integrated circuit package having multiple bonding tiers
JP2931741B2 (ja) 1993-09-24 1999-08-09 株式会社東芝 半導体装置
JPH07288385A (ja) 1994-04-19 1995-10-31 Hitachi Chem Co Ltd 多層配線板及びその製造法
US5741729A (en) * 1994-07-11 1998-04-21 Sun Microsystems, Inc. Ball grid array package for an integrated circuit
US5622588A (en) 1995-02-02 1997-04-22 Hestia Technologies, Inc. Methods of making multi-tier laminate substrates for electronic device packaging
JPH08288316A (ja) * 1995-04-14 1996-11-01 Citizen Watch Co Ltd 半導体装置
US5689091A (en) 1996-09-19 1997-11-18 Vlsi Technology, Inc. Multi-layer substrate structure
US6054758A (en) 1996-12-18 2000-04-25 Texas Instruments Incorporated Differential pair geometry for integrated circuit chip packages
JPH1174651A (ja) 1997-03-13 1999-03-16 Ibiden Co Ltd プリント配線板及びその製造方法
JPH11204688A (ja) * 1997-11-11 1999-07-30 Sony Corp 半導体パッケージおよびその製造方法
US6064113A (en) * 1998-01-13 2000-05-16 Lsi Logic Corporation Semiconductor device package including a substrate having bonding fingers within an electrically conductive ring surrounding a die area and a combined power and ground plane to stabilize signal path impedances
JPH11266068A (ja) * 1998-01-14 1999-09-28 Canon Inc 配線基板及び配線基板の製造方法
JPH11354566A (ja) * 1998-06-08 1999-12-24 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP4352365B2 (ja) 2009-10-28
KR20020008781A (ko) 2002-01-31
TW512503B (en) 2002-12-01
US6465882B1 (en) 2002-10-15
GB2370413A (en) 2002-06-26
JP2002093949A (ja) 2002-03-29
JP2008172267A (ja) 2008-07-24
GB2370413B (en) 2004-10-20
GB0117310D0 (en) 2001-09-05
JP5135493B2 (ja) 2013-02-06

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