JP4352365B2 - 集積回路パッケージの製造方法および集積回路パッケージ - Google Patents

集積回路パッケージの製造方法および集積回路パッケージ Download PDF

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Publication number
JP4352365B2
JP4352365B2 JP2001218921A JP2001218921A JP4352365B2 JP 4352365 B2 JP4352365 B2 JP 4352365B2 JP 2001218921 A JP2001218921 A JP 2001218921A JP 2001218921 A JP2001218921 A JP 2001218921A JP 4352365 B2 JP4352365 B2 JP 4352365B2
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JP
Japan
Prior art keywords
integrated circuit
conductive layer
circuit package
region
conductive
Prior art date
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Expired - Lifetime
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JP2001218921A
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English (en)
Japanese (ja)
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JP2002093949A (ja
JP2002093949A5 (https=
Inventor
コーン チャールズ
アール ホーク，ジュニヤ ドナルド
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Agere Systems LLC
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Agere Systems LLC
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Publication of JP2002093949A5 publication Critical patent/JP2002093949A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
JP2001218921A 2000-07-21 2001-07-19 集積回路パッケージの製造方法および集積回路パッケージ Expired - Lifetime JP4352365B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/620939 2000-07-21
US09/620,939 US6465882B1 (en) 2000-07-21 2000-07-21 Integrated circuit package having partially exposed conductive layer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008045768A Division JP5135493B2 (ja) 2000-07-21 2008-02-27 集積回路パッケージ

Publications (3)

Publication Number Publication Date
JP2002093949A JP2002093949A (ja) 2002-03-29
JP2002093949A5 JP2002093949A5 (https=) 2004-09-09
JP4352365B2 true JP4352365B2 (ja) 2009-10-28

Family

ID=24488025

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001218921A Expired - Lifetime JP4352365B2 (ja) 2000-07-21 2001-07-19 集積回路パッケージの製造方法および集積回路パッケージ
JP2008045768A Expired - Lifetime JP5135493B2 (ja) 2000-07-21 2008-02-27 集積回路パッケージ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008045768A Expired - Lifetime JP5135493B2 (ja) 2000-07-21 2008-02-27 集積回路パッケージ

Country Status (5)

Country Link
US (1) US6465882B1 (https=)
JP (2) JP4352365B2 (https=)
KR (1) KR100678878B1 (https=)
GB (1) GB2370413B (https=)
TW (1) TW512503B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790760B1 (en) * 2000-07-21 2004-09-14 Agere Systems Inc. Method of manufacturing an integrated circuit package
DE10109542B4 (de) * 2001-02-28 2004-02-05 Siemens Ag Anordung zur Verbindung eines auf einer Leiterplatte angebrachten Bauelementes mit einer flexiblen Schichtanordnung
JP2005500638A (ja) * 2001-08-10 2005-01-06 シーゲイト テクノロジー エルエルシー 集積相互接続とその製造方法
DE10233607B4 (de) 2002-07-24 2005-09-29 Siemens Ag Anordnung mit einem Halbleiterchip und einem mit einer Durchkontaktierung versehenen Träger sowie einem ein Anschlusspad des Halbleiterchips mit der Durchkontaktierung verbindenden Draht und Verfahren zum Herstellen einer solchen Anordnung
TWI241000B (en) * 2003-01-21 2005-10-01 Siliconware Precision Industries Co Ltd Semiconductor package and fabricating method thereof
US7423340B2 (en) * 2003-01-21 2008-09-09 Siliconware Precision Industries Co., Ltd. Semiconductor package free of substrate and fabrication method thereof
US20040183167A1 (en) * 2003-03-21 2004-09-23 Texas Instruments Incorporated Recessed-bond semiconductor package substrate
US6956286B2 (en) * 2003-08-05 2005-10-18 International Business Machines Corporation Integrated circuit package with overlapping bond fingers
US7166905B1 (en) 2004-10-05 2007-01-23 Integrated Device Technology, Inc. Stacked paddle micro leadframe package
TWI286917B (en) * 2005-01-14 2007-09-11 Au Optronics Corp Thermal bonding structure and manufacture process of flexible printed circuit (FPC)
TW200703606A (en) * 2005-07-15 2007-01-16 Siliconware Precision Industries Co Ltd Semiconductor package and fabrication method thereof
US8447700B2 (en) 2005-10-11 2013-05-21 Amazon Technologies, Inc. Transaction authorization service
WO2010090075A1 (ja) * 2009-02-05 2010-08-12 アルプス電気株式会社 磁気検出装置
CN103000539B (zh) * 2012-11-16 2016-05-18 日月光半导体制造股份有限公司 半导体封装构造及其制造方法

Family Cites Families (19)

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US4320438A (en) 1980-05-15 1982-03-16 Cts Corporation Multi-layer ceramic package
JPH01258447A (ja) * 1988-04-08 1989-10-16 Nec Corp 混成集積回路の積層厚膜基板
US5196725A (en) * 1990-06-11 1993-03-23 Hitachi Cable Limited High pin count and multi-layer wiring lead frame
JPH07112039B2 (ja) * 1991-03-14 1995-11-29 日立電線株式会社 多ピン多層配線リードフレーム
US5220195A (en) * 1991-12-19 1993-06-15 Motorola, Inc. Semiconductor device having a multilayer leadframe with full power and ground planes
JP3325351B2 (ja) * 1993-08-18 2002-09-17 株式会社東芝 半導体装置
US5490324A (en) 1993-09-15 1996-02-13 Lsi Logic Corporation Method of making integrated circuit package having multiple bonding tiers
JP2931741B2 (ja) 1993-09-24 1999-08-09 株式会社東芝 半導体装置
JPH07288385A (ja) 1994-04-19 1995-10-31 Hitachi Chem Co Ltd 多層配線板及びその製造法
US5741729A (en) * 1994-07-11 1998-04-21 Sun Microsystems, Inc. Ball grid array package for an integrated circuit
US5622588A (en) 1995-02-02 1997-04-22 Hestia Technologies, Inc. Methods of making multi-tier laminate substrates for electronic device packaging
JPH08288316A (ja) * 1995-04-14 1996-11-01 Citizen Watch Co Ltd 半導体装置
US5689091A (en) 1996-09-19 1997-11-18 Vlsi Technology, Inc. Multi-layer substrate structure
US6054758A (en) 1996-12-18 2000-04-25 Texas Instruments Incorporated Differential pair geometry for integrated circuit chip packages
JPH1174651A (ja) 1997-03-13 1999-03-16 Ibiden Co Ltd プリント配線板及びその製造方法
JPH11204688A (ja) * 1997-11-11 1999-07-30 Sony Corp 半導体パッケージおよびその製造方法
US6064113A (en) * 1998-01-13 2000-05-16 Lsi Logic Corporation Semiconductor device package including a substrate having bonding fingers within an electrically conductive ring surrounding a die area and a combined power and ground plane to stabilize signal path impedances
JPH11266068A (ja) * 1998-01-14 1999-09-28 Canon Inc 配線基板及び配線基板の製造方法
JPH11354566A (ja) * 1998-06-08 1999-12-24 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR20020008781A (ko) 2002-01-31
TW512503B (en) 2002-12-01
US6465882B1 (en) 2002-10-15
GB2370413A (en) 2002-06-26
JP2002093949A (ja) 2002-03-29
JP2008172267A (ja) 2008-07-24
GB2370413B (en) 2004-10-20
KR100678878B1 (ko) 2007-02-07
GB0117310D0 (en) 2001-09-05
JP5135493B2 (ja) 2013-02-06

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