KR100669183B1 - 포토애시드 생성제 혼합물을 포함한 포토레지스트 조성물 - Google Patents
포토애시드 생성제 혼합물을 포함한 포토레지스트 조성물 Download PDFInfo
- Publication number
- KR100669183B1 KR100669183B1 KR1020000006750A KR20000006750A KR100669183B1 KR 100669183 B1 KR100669183 B1 KR 100669183B1 KR 1020000006750 A KR1020000006750 A KR 1020000006750A KR 20000006750 A KR20000006750 A KR 20000006750A KR 100669183 B1 KR100669183 B1 KR 100669183B1
- Authority
- KR
- South Korea
- Prior art keywords
- photoacid
- photoresist composition
- photoresist
- photoacid generator
- groups
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
(에너지 mJ/cm2) | ||||||
샘플 | Eo | E0.22 | E0.20 (Esize) | E0.18 | EL | Es/E0 |
레지스트 1 | 4.3 | 15.96 | 15.03 | 14.10 | 12.4% | 3.50 |
레지스트 2 | 3.8 | 14.58 | 13.60 | 12.61 | 14.5% | 3.58 |
레지스트 3 | 3.3 | 13.00 | 12.49 | 11.98 | 8.2% | 3.79 |
샘플 | 초점 크기 0.25 ㎛ 접촉 홀 |
레지스트 1 | 0.35 ㎛ |
레지스트 2 | 0.75 ㎛ |
레지스트 3 | 0.5 ㎛ |
샘플 | 1:1 0.25 ㎛ l/s | Iso 0.25 ㎛ | 1:1 0.20 ㎛ l/s | Iso 0.20 ㎛ |
레지스트 4 | 7.9% | 10.5% | 2.7% | 2.2% |
레지스트 5 | 14.1% | 13.0% | 8.3% | 8.7% |
Claims (23)
- 포토레지스트 조성물의 노광된 코팅층을 현상시키는데 충분한 양의 수지 결합제 및 포토애시드 생성제 화합물의 혼합물을 포함하고,상기 포토애시드 생성제 화합물의 혼합물이 제 1 포토애시드 생성제와 제 2 포토애시드 생성제를 포함하며, 여기서 제 1 및 제 2 포토애시드 생성제가 각각 광활성화시 pKa 값의 차이가 적어도 0.5인 제 1 포토애시드와 제 2 포토애시드를 생성하는 포토레지스트 조성물.
- 제 1 항에 있어서, 제 1 및 제 2 포토애시드 생성제가 광활성화시 pKa 값의 차이가 적어도 1인 산들을 생성하는 포토레지스트 조성물.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 제 1 항에 있어서, 제 1 포토애시드 생성제가 오늄(onium) 화합물인 포토레지스트 조성물.
- 제 1 항에 있어서, 제 2 포토애시드 생성제가 오늄 화합물인 포토레지스트 조성물.
- 제 1 항에 있어서, 제 1 또는 제 2 포토애시드 생성제가 이미도설포네이트, 디아조설포닐 화합물, 설포네이트 에스테르, 니트로벤질 화합물, 디설폰 화합물, 또는 할로겐화 비이온성 화합물인 포토레지스트 조성물.
- 삭제
- 제 1 항에 있어서, 제 1 및 제 2 포토애시드의 크기의 차이가 적어도 40Å3인 포토레지스트 조성물.
- 포토레지스트 조성물의 노광된 코팅층을 현상시키는데 충분한 양으로 수지 결합제 및 포토애시드 생성제 화합물의 혼합물을 포함하고,포토애시드 생성제 화합물의 혼합물이 제 1 포토애시드 생성제와 제 2 포토애시드 생성제를 포함하며, 여기서 제 1 및 제 2 포토애시드 생성제가 각각 광활성화시 크기의 차이가 적어도 40Å3인 제 1 포토애시드와 제 2 포토애시드를 생성하는 포토레지스트 조성물.
- 삭제
- 삭제
- (a) 기판상에 제 1 항의 포토레지스트 조성물의 코팅층을 도포하고;(b) 포토레지스트 코팅층을 패턴화 활성 조사선에 노광시키고 노광된 포토레 지스트 층을 현상하여 릴리프(relief) 이미지를 제공하는 것을 특징으로 하여 기판상에 포토레지스트 릴리프 이미지를 형성하는 방법.
- (a) 기판상에 제 13 항의 포토레지스트 조성물의 코팅층을 도포하고;(b) 포토레지스트 코팅층을 패턴화 활성 조사선에 노광시키고 노광된 포토레지스트 층을 현상하여 릴리프 이미지를 제공하는 것을 특징으로 하여 기판상에 포토레지스트 릴리프 이미지를 형성하는 방법.
- 적어도 하나의 표면상에 제 1 항의 포토레지스트 조성물의 코팅층을 가진 기판을 포함하는 제품.
- 적어도 하나의 표면상에 제 13 항의 포토레지스트 조성물의 코팅층을 가진 기판을 포함하는 제품.
- 삭제
- 제 1 포토애시드 생성제와 제 2 포토애시드 생성제를 포함하며, 여기서 제 1 및 제 2 포토애시드 생성제가 각각 광활성화시 pKa 값의 차이가 적어도 0.5인 제 1 포토애시드 및 제 2 포토애시드를 생성하는 포토애시드 생성제 혼합물.
- 제 21 항에 있어서, 제 1 및 제 2 포토애시드의 크기의 차이가 적어도 40Å3인 포토애시드 생성제 혼합물.
- 제 1 포토애시드 생성제와 제 2 포토애시드 생성제를 포함하며, 여기서 제 1 및 제 2 포토애시드 생성제가 각각 광활성화시 크기의 차이가 적어도 40Å3인 제 1 포토애시드 및 제 2 포토애시드를 생성하는 포토애시드 생성제 혼합물.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/253,171 US6200728B1 (en) | 1999-02-20 | 1999-02-20 | Photoresist compositions comprising blends of photoacid generators |
US9/253,171 | 1999-02-20 | ||
US09/253,171 | 1999-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000076655A KR20000076655A (ko) | 2000-12-26 |
KR100669183B1 true KR100669183B1 (ko) | 2007-01-16 |
Family
ID=22959171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000006750A KR100669183B1 (ko) | 1999-02-20 | 2000-02-14 | 포토애시드 생성제 혼합물을 포함한 포토레지스트 조성물 |
Country Status (5)
Country | Link |
---|---|
US (3) | US6200728B1 (ko) |
EP (1) | EP1030221A1 (ko) |
JP (3) | JP2000241965A (ko) |
KR (1) | KR100669183B1 (ko) |
TW (1) | TWI269939B (ko) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3955384B2 (ja) * | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | 化学増幅型レジスト組成物 |
JP4272805B2 (ja) * | 1999-12-27 | 2009-06-03 | 富士フイルム株式会社 | ポジ型感放射線性組成物 |
JP4253427B2 (ja) * | 2000-09-19 | 2009-04-15 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
KR20030029053A (ko) * | 2001-04-05 | 2003-04-11 | 아치 스페셜티 케미칼즈, 인코포레이티드 | 포토레지스트용 퍼플루오로알킬설폰산 화합물 |
JP3912767B2 (ja) * | 2001-06-21 | 2007-05-09 | 富士フイルム株式会社 | ポジ型感光性組成物 |
US6949329B2 (en) | 2001-06-22 | 2005-09-27 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
TWI300516B (ko) * | 2001-07-24 | 2008-09-01 | Jsr Corp | |
EP1308781A3 (en) * | 2001-10-05 | 2003-09-03 | Shipley Co. L.L.C. | Cyclic sulfonium and sulfoxonium photoacid generators and photoresists containing them |
JP3901997B2 (ja) * | 2001-11-27 | 2007-04-04 | 富士通株式会社 | レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
US7214465B2 (en) * | 2002-01-10 | 2007-05-08 | Fujifilm Corporation | Positive photosensitive composition |
US7108951B2 (en) * | 2002-02-26 | 2006-09-19 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
JP4410977B2 (ja) * | 2002-07-09 | 2010-02-10 | 富士通株式会社 | 化学増幅レジスト材料及びそれを用いたパターニング方法 |
US7208249B2 (en) * | 2002-09-30 | 2007-04-24 | Applied Materials, Inc. | Method of producing a patterned photoresist used to prepare high performance photomasks |
US7314700B2 (en) * | 2002-12-05 | 2008-01-01 | International Business Machines Corporation | High sensitivity resist compositions for electron-based lithography |
US7365733B2 (en) * | 2002-12-16 | 2008-04-29 | E Ink Corporation | Backplanes for electro-optic displays |
KR100561842B1 (ko) * | 2003-08-25 | 2006-03-16 | 삼성전자주식회사 | 단량체 광산발생제 조성물, 상기 조성물로 코팅된 기판,상기 단량체 광산발생제 조성물을 이용하여 기판상에서화합물을 합성하는 방법 및 상기 방법에 의하여 제조된마이크로어레이 |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
US7393627B2 (en) * | 2004-03-16 | 2008-07-01 | Cornell Research Foundation, Inc. | Environmentally friendly photoacid generators (PAGs) with no perfluorooctyl sulfonates (PFOS) |
JP4308051B2 (ja) * | 2004-03-22 | 2009-08-05 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
KR100599076B1 (ko) * | 2004-05-31 | 2006-07-13 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법 |
JP2006078760A (ja) * | 2004-09-09 | 2006-03-23 | Tokyo Ohka Kogyo Co Ltd | 電子線またはeuv(極端紫外光)用レジスト組成物及びレジストパターン形成方法 |
EP1829942B1 (en) | 2006-02-28 | 2012-09-26 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
WO2007124092A2 (en) * | 2006-04-21 | 2007-11-01 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
JP4355725B2 (ja) * | 2006-12-25 | 2009-11-04 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
US8088548B2 (en) * | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
US20090181319A1 (en) * | 2008-01-16 | 2009-07-16 | International Business Machines Corporation | Aromatic fluorine-free photoacid generators and photoresist compositions containing the same |
US8034533B2 (en) * | 2008-01-16 | 2011-10-11 | International Business Machines Corporation | Fluorine-free heteroaromatic photoacid generators and photoresist compositions containing the same |
JP5216573B2 (ja) | 2008-03-31 | 2013-06-19 | 富士フイルム株式会社 | 感活性光線または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
US8163461B2 (en) * | 2008-04-09 | 2012-04-24 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
JP5192277B2 (ja) * | 2008-04-14 | 2013-05-08 | シャープ株式会社 | 固体撮像装置の製造方法 |
JP5746818B2 (ja) * | 2008-07-09 | 2015-07-08 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
US8455176B2 (en) * | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
KR101949719B1 (ko) * | 2008-12-23 | 2019-04-25 | 노보머, 인코포레이티드 | 조정 가능한 중합체 조성물 |
EP2216683B1 (en) | 2009-02-08 | 2018-11-14 | Rohm and Haas Electronic Materials, L.L.C. | Substrates coated with an antireflective composition and a photoresist |
EP2216684B1 (en) | 2009-02-08 | 2015-10-07 | Rohm and Haas Electronic Materials LLC | Method of forming a photoresist image comprising an undercoat layer |
US20100203450A1 (en) * | 2009-02-11 | 2010-08-12 | International Business Machines Corporation | Photoresist compositions and methods of use |
US8883407B2 (en) | 2009-06-12 | 2014-11-11 | Rohm And Haas Electronic Materials Llc | Coating compositions suitable for use with an overcoated photoresist |
US8227307B2 (en) * | 2009-06-24 | 2012-07-24 | International Business Machines Corporation | Method for removing threshold voltage adjusting layer with external acid diffusion process |
US8632948B2 (en) * | 2009-09-30 | 2014-01-21 | Az Electronic Materials Usa Corp. | Positive-working photoimageable bottom antireflective coating |
US20110086312A1 (en) * | 2009-10-09 | 2011-04-14 | Dammel Ralph R | Positive-Working Photoimageable Bottom Antireflective Coating |
US8460851B2 (en) * | 2010-01-14 | 2013-06-11 | Sumitomo Chemical Company, Limited | Salt and photoresist composition containing the same |
TWI513678B (zh) | 2010-06-29 | 2015-12-21 | Sumitomo Chemical Co | 鹽、酸產生劑及光阻組成物 |
US20120040288A1 (en) * | 2010-08-11 | 2012-02-16 | Microchem Corp. | Epoxy formulations with controllable photospeed |
EP2458440A1 (en) * | 2010-11-30 | 2012-05-30 | Rohm and Haas Electronic Materials LLC | Photoacid generators |
JP5906787B2 (ja) | 2011-03-08 | 2016-04-20 | 住友化学株式会社 | 塩、レジスト組成物及びレジストパターンの製造方法 |
JP5985898B2 (ja) | 2011-07-19 | 2016-09-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5990041B2 (ja) | 2011-07-19 | 2016-09-07 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP5886696B2 (ja) | 2011-07-19 | 2016-03-16 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
JP2013174660A (ja) * | 2012-02-23 | 2013-09-05 | Fujifilm Corp | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置 |
JP5856991B2 (ja) | 2012-05-21 | 2016-02-10 | 富士フイルム株式会社 | 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法 |
US10248020B2 (en) * | 2012-12-28 | 2019-04-02 | Rohm And Haas Electronic Materials Llc | Acid generators and photoresists comprising same |
JP5789705B2 (ja) * | 2014-06-16 | 2015-10-07 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法 |
JP2018109701A (ja) | 2017-01-04 | 2018-07-12 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 化学増幅型ポジ型フォトレジスト組成物およびそれを用いたパターン形成方法 |
WO2019172054A1 (ja) * | 2018-03-08 | 2019-09-12 | Jsr株式会社 | 感放射線性樹脂組成物及びその製造方法並びにレジストパターン形成方法 |
US11820735B2 (en) * | 2018-04-12 | 2023-11-21 | Sumitomo Chemical Company, Limited | Salt, acid generator, resist composition and method for producing resist pattern |
KR102475952B1 (ko) * | 2018-06-22 | 2022-12-09 | 메르크 파텐트 게엠베하 | 포토레지스트 조성물, 및 포토레지스트 코팅, 에칭된 포토레지스트 코팅 및 에칭된 Si 함유 층(들)의 제조방법, 및 이들을 사용하는 디바이스의 제조방법 |
JP7344108B2 (ja) | 2019-01-08 | 2023-09-13 | 信越化学工業株式会社 | レジスト組成物、及びパターン形成方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02309358A (ja) * | 1989-05-24 | 1990-12-25 | Nippon Paint Co Ltd | ポジ型感光性樹脂組成物 |
US5322765A (en) | 1991-11-22 | 1994-06-21 | International Business Machines Corporation | Dry developable photoresist compositions and method for use thereof |
JPH06130666A (ja) * | 1992-10-16 | 1994-05-13 | Sumitomo Chem Co Ltd | フォトレジスト組成物 |
US5374500A (en) | 1993-04-02 | 1994-12-20 | International Business Machines Corporation | Positive photoresist composition containing photoacid generator and use thereof |
JP2715881B2 (ja) * | 1993-12-28 | 1998-02-18 | 日本電気株式会社 | 感光性樹脂組成物およびパターン形成方法 |
JP3568599B2 (ja) * | 1993-12-28 | 2004-09-22 | 富士通株式会社 | 放射線感光材料及びパターン形成方法 |
JPH07219216A (ja) | 1994-01-31 | 1995-08-18 | Nippon Kayaku Co Ltd | ポジ型感放射線性樹脂組成物及びそれを用いるパターン形成法 |
JP3573358B2 (ja) | 1994-02-25 | 2004-10-06 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
US5663035A (en) | 1994-04-13 | 1997-09-02 | Hoechst Japan Limited | Radiation-sensitive mixture comprising a basic iodonium compound |
JP3290303B2 (ja) * | 1994-07-04 | 2002-06-10 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
US5532106A (en) | 1994-08-31 | 1996-07-02 | Cornell Research Foundation, Inc. | Positive-tone photoresist containing diester dissolution inhibitors |
JP2942167B2 (ja) * | 1994-09-02 | 1999-08-30 | 和光純薬工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
US5558971A (en) * | 1994-09-02 | 1996-09-24 | Wako Pure Chemical Industries, Ltd. | Resist material |
JP3399141B2 (ja) * | 1995-03-07 | 2003-04-21 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
JP3591549B2 (ja) * | 1995-11-02 | 2004-11-24 | 信越化学工業株式会社 | 新規ヨ−ドニウム塩及び化学増幅ポジ型レジスト材料 |
JP3918880B2 (ja) * | 1995-11-02 | 2007-05-23 | 信越化学工業株式会社 | 新規スルホニウム塩及び化学増幅ポジ型レジスト材料 |
TW477913B (en) * | 1995-11-02 | 2002-03-01 | Shinetsu Chemical Co | Sulfonium salts and chemically amplified positive resist compositions |
ATE244904T1 (de) | 1995-12-21 | 2003-07-15 | Wako Pure Chem Ind Ltd | Polymerzusammensetzung und rezistmaterial |
JP3409619B2 (ja) * | 1995-12-21 | 2003-05-26 | 和光純薬工業株式会社 | ポリマー組成物及びこれを含んで成るレジスト材料 |
US5731364A (en) | 1996-01-24 | 1998-03-24 | Shipley Company, L.L.C. | Photoimageable compositions comprising multiple arylsulfonium photoactive compounds |
US5942367A (en) * | 1996-04-24 | 1999-08-24 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group |
JPH1097075A (ja) * | 1996-06-07 | 1998-04-14 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP3623058B2 (ja) * | 1996-06-13 | 2005-02-23 | 和光純薬工業株式会社 | 新規ポリマー及びこれを用いたレジスト組成物並びにこれを用いたパターン形成方法 |
JP3679206B2 (ja) | 1996-09-20 | 2005-08-03 | 東京応化工業株式会社 | ポジ型レジスト組成物、それを用いた多層レジスト材料及びレジストパターン形成方法 |
JP3679205B2 (ja) * | 1996-09-20 | 2005-08-03 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
US5939236A (en) * | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
JP3674243B2 (ja) * | 1997-05-21 | 2005-07-20 | Jsr株式会社 | レジストパターン形成方法 |
JPH1124273A (ja) * | 1997-06-30 | 1999-01-29 | Jsr Corp | 感放射線性樹脂組成物 |
KR100551653B1 (ko) | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
US6037107A (en) * | 1997-08-28 | 2000-03-14 | Shipley Company, L.L.C. | Photoresist compositions |
KR19990036901A (ko) | 1997-10-08 | 1999-05-25 | 카나가와 치히로 | 폴리스티렌계 고분자 화합물, 화학증폭 포지티브형 레지스트 재료 및 패턴 형성 방법 |
US6136502A (en) | 1997-10-08 | 2000-10-24 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
IT1295307B1 (it) | 1997-10-10 | 1999-05-04 | Niarb S A | Finitrice per la posa in opera dei conglomerati bituminosi munita di un rasatore estensibile perfezionato |
EP0955562A1 (de) | 1998-05-07 | 1999-11-10 | Siemens Aktiengesellschaft | Chemisch verstärkter Resist |
JP3743187B2 (ja) | 1998-05-08 | 2006-02-08 | 住友化学株式会社 | フォトレジスト組成物 |
US6280911B1 (en) | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
-
1999
- 1999-02-20 US US09/253,171 patent/US6200728B1/en not_active Expired - Lifetime
-
2000
- 2000-02-14 KR KR1020000006750A patent/KR100669183B1/ko active IP Right Grant
- 2000-02-15 EP EP00301138A patent/EP1030221A1/en not_active Ceased
- 2000-02-19 TW TW089102895A patent/TWI269939B/zh not_active IP Right Cessation
- 2000-02-21 JP JP2000042690A patent/JP2000241965A/ja active Pending
- 2000-04-19 US US09/552,211 patent/US6203965B1/en not_active Expired - Lifetime
-
2001
- 2001-02-17 US US09/788,106 patent/US6803169B2/en not_active Expired - Lifetime
-
2010
- 2010-04-07 JP JP2010089034A patent/JP2010186193A/ja active Pending
-
2013
- 2013-08-09 JP JP2013166405A patent/JP5810139B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20000076655A (ko) | 2000-12-26 |
JP2010186193A (ja) | 2010-08-26 |
JP2013232016A (ja) | 2013-11-14 |
US6200728B1 (en) | 2001-03-13 |
EP1030221A1 (en) | 2000-08-23 |
TWI269939B (en) | 2007-01-01 |
US6803169B2 (en) | 2004-10-12 |
JP2000241965A (ja) | 2000-09-08 |
JP5810139B2 (ja) | 2015-11-11 |
US6203965B1 (en) | 2001-03-20 |
US20010038970A1 (en) | 2001-11-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100669183B1 (ko) | 포토애시드 생성제 혼합물을 포함한 포토레지스트 조성물 | |
US6280911B1 (en) | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators | |
US6300035B1 (en) | Chemically amplified positive photoresists | |
JP4871549B2 (ja) | ポジ型レジスト組成物及びそれを用いたパターン形成方法 | |
JP4297408B2 (ja) | 厚膜フォトレジストとこれらの使用方法 | |
EP1505439A2 (en) | Positive photosensitive composition and method of forming resist pattern | |
KR20120065983A (ko) | 액침 노광에 사용하기 위한 포지티브형 레지스트 조성물 및 그것을 사용한 패턴형성방법 | |
EP2372456A2 (en) | Novel polymers and photoresist compositions | |
JP4308051B2 (ja) | 感光性組成物及びそれを用いたパターン形成方法 | |
US20020051932A1 (en) | Photoresists for imaging with high energy radiation | |
US6107425A (en) | Narrow molecular weight distribution polymers and use of same as resin binders for negative-acting photoresists | |
JP3901342B2 (ja) | ポジ型感光性樹脂組成物 | |
KR100557556B1 (ko) | 산 확산 방지용 포토레지스트 첨가제 및 이를 함유하는포토레지스트 조성물 | |
US6818148B1 (en) | Resist composition and patterning method | |
US20040202954A1 (en) | Positive resist composition and pattern formation method using the same | |
JP3976108B2 (ja) | パターン形成方法 | |
US20020051938A1 (en) | Novel polymers and photoresist compositions for short wavelength imaging | |
JP3925882B2 (ja) | ポジ型感光性樹脂組成物 | |
JP2000112130A (ja) | ポジ型感光性樹脂組成物 | |
KR20030076215A (ko) | 단파장 이미지화용 포토레지스트 조성물 | |
JP2002090987A (ja) | ポジ型レジスト組成物 | |
JP2002131914A (ja) | ポジ型感光性樹脂組成物 | |
JP2004126302A (ja) | ポジ型レジスト組成物 | |
JP2002131913A (ja) | ポジ型感光性樹脂組成物 | |
JP2003162061A (ja) | ポジ型レジスト組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121226 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20131220 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20141231 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151217 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20161220 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20171219 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20181226 Year of fee payment: 13 |