KR100659954B1 - 반도체 장치 및 반도체 장치의 제조방법 - Google Patents
반도체 장치 및 반도체 장치의 제조방법 Download PDFInfo
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- KR100659954B1 KR100659954B1 KR1020000011292A KR20000011292A KR100659954B1 KR 100659954 B1 KR100659954 B1 KR 100659954B1 KR 1020000011292 A KR1020000011292 A KR 1020000011292A KR 20000011292 A KR20000011292 A KR 20000011292A KR 100659954 B1 KR100659954 B1 KR 100659954B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 147
- 238000004519 manufacturing process Methods 0.000 title description 20
- 239000011347 resin Substances 0.000 claims abstract description 47
- 229920005989 resin Polymers 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000002093 peripheral effect Effects 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 24
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000035882 stress Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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Abstract
Description
Claims (12)
- 제 1 두께를 갖는 중앙부 및 상기 제 1 두께보다도 얇은 제 2 두께를 갖는 주변부를 갖는 반도체기판,상기 반도체기판상에 형성된 전극패드,상기 반도체기판의 상기 중앙부 및 상기 주변부를 밀봉하는 밀봉수지,상기 밀봉수지상에 형성된 돌기전극, 및상기 전극패드와 상기 돌기전극을 전기적으로 접속하는 배선을 포함하는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서,상기 제 1 두께는 상기 제 2 두께보다 10 ㎛ 이상 더 얇은 것을 특징으로 하는 반도체장치.
- 중앙부와 상기 중앙부의 표면에 대하여 측정된 소정 높이의 단차를 가지고 형성되는 주변부를 갖는 반도체기판,상기 반도체기판의 상기 중앙부상에 형성된 전극패드,배선을 통하여 상기 전극패드에 전기적으로 접속되는 돌기전극, 및상기 반도체기판의 상기 중앙부, 상기 주변부, 및 상기 배선을 밀봉하는 밀봉수지를 포함하는 것을 특징으로 하는 반도체장치.
- 제 3 항에 있어서,상기 반도체기판의 상기 주변부는 상기 반도체장치의 단부에서 상기 중앙부까지의 거리와 동일한 폭을 갖고, 상기 주변부의 폭은 제 1 값과 제 2 값 사이에서 변하는 것을 특징으로 하는 반도체장치.
- 제 3 항에 있어서,상기 반도체기판의 상기 주변부는 상기 반도체장치의 단부에서 상기 중앙부까지의 거리와 동일한 폭을 갖고, 상기 주변부의 상기 폭은 3 ㎛ 이상인 것을 특징으로 하는 반도체장치.
- 제 3 항에 있어서,상기 단차의 상기 소정의 높이는 10 ㎛ 이상인 것을 특징으로 하는 반도체장치.
- 반도체웨이퍼상에 전극패드를 형성하는 단계,상기 전극패드에 접속되는 배선을 형성하는 단계,상기 반도체웨이퍼의 소정영역에 하한값으로서의 제 1 값과 상한값으로서의 제 2 값 사이에서 변하는 제 1 폭을 갖는 홈을 형성하는 단계,상기 반도체웨이퍼 및 상기 배선을 수지로 밀봉하는 단계,상기 수지상에 상기 배선에 전기적으로 접속된 돌기전극을 형성하는 단계, 및상기 소정영역을 상기 제 1 폭보다도 작은 두께의 블레이드를 이용하여 절단함으로써 상기 반도체웨이퍼를 복수의 반도체장치로 분할하는 단계를 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 7 항에 있어서,상기 제 1 폭을 갖는 상기 홈의 깊이는 10 ㎛ 이상인 것을 특징으로 하는 반도체장치의 제조방법.
- 제 7 항에 있어서,상기 제 1 폭과 상기 제 2 폭간의 차이는 6 ㎛ 이상인 것을 특징으로 하는 반도체장치의 제조방법.
- 반도체웨이퍼상에 전극패드를 형성하는 단계,상기 전극패드에 접속되는 배선을 형성하는 단계,상기 반도체웨이퍼의 소정영역에 하한값으로서의 제 1 값 및 상한값으로서의 제 2 값 사이에서 변하는 제 1 폭을 갖는 홈을 형성하는 단계,상기 반도체웨이퍼 및 상기 배선을 수지로 밀봉하는 단계,상기 수지상에 상기 배선에 전기적으로 접속된 돌기전극을 형성하는 단계, 및상기 소정영역을 상기 제 2 값보다 작은 제 3 두께를 갖는 블레이드를 이용하여 절단함으로써 상기 반도체웨이퍼를 복수의 반도체장치로 분할하는 단계를 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 10 항에 있어서,상기 홈의 깊이는 10 ㎛ 이상인 것을 특징으로 하는 반도체장치의 제조방법.
- 제 10 항에 있어서,상기 제 2 값과 상기 제 3 두께 사이의 차이는 6 ㎛ 이상인 것을 특징으로 하는 반도체장치의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP99-065157 | 1999-03-11 | ||
JP11065157A JP3128548B2 (ja) | 1999-03-11 | 1999-03-11 | 半導体装置および半導体装置の製造方法 |
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Publication Number | Publication Date |
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KR20000071421A KR20000071421A (ko) | 2000-11-25 |
KR100659954B1 true KR100659954B1 (ko) | 2006-12-22 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020000011292A KR100659954B1 (ko) | 1999-03-11 | 2000-03-07 | 반도체 장치 및 반도체 장치의 제조방법 |
Country Status (4)
Country | Link |
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US (3) | US6281591B1 (ko) |
JP (1) | JP3128548B2 (ko) |
KR (1) | KR100659954B1 (ko) |
TW (1) | TW445589B (ko) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP3446825B2 (ja) * | 1999-04-06 | 2003-09-16 | 沖電気工業株式会社 | 半導体装置およびその製造方法 |
JP4691787B2 (ja) * | 2001-01-15 | 2011-06-01 | パナソニック株式会社 | Sawデバイス |
JP4856328B2 (ja) * | 2001-07-13 | 2012-01-18 | ローム株式会社 | 半導体装置の製造方法 |
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- 2000-03-07 KR KR1020000011292A patent/KR100659954B1/ko active IP Right Grant
- 2000-03-10 TW TW089104363A patent/TW445589B/zh not_active IP Right Cessation
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2001
- 2001-07-03 US US09/897,090 patent/US6770543B2/en not_active Expired - Fee Related
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US6281591B1 (en) | 2001-08-28 |
KR20000071421A (ko) | 2000-11-25 |
JP2000260910A (ja) | 2000-09-22 |
US20010039110A1 (en) | 2001-11-08 |
TW445589B (en) | 2001-07-11 |
JP3128548B2 (ja) | 2001-01-29 |
US20040161910A1 (en) | 2004-08-19 |
US6770543B2 (en) | 2004-08-03 |
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