KR100643425B1 - 수직형 트랜지스터 및 매립된 워드라인을 갖는 반도체 디바이스 - Google Patents

수직형 트랜지스터 및 매립된 워드라인을 갖는 반도체 디바이스 Download PDF

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Publication number
KR100643425B1
KR100643425B1 KR1019990010211A KR19990010211A KR100643425B1 KR 100643425 B1 KR100643425 B1 KR 100643425B1 KR 1019990010211 A KR1019990010211 A KR 1019990010211A KR 19990010211 A KR19990010211 A KR 19990010211A KR 100643425 B1 KR100643425 B1 KR 100643425B1
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KR
South Korea
Prior art keywords
vertically oriented
gate
semiconductor device
wordline
layer
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Expired - Fee Related
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KR1019990010211A
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English (en)
Korean (ko)
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KR19990078241A (ko
Inventor
토마스에스. 루프
요한 알스마이어
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지멘스 악티엔게젤샤프트
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Publication of KR19990078241A publication Critical patent/KR19990078241A/ko
Application granted granted Critical
Publication of KR100643425B1 publication Critical patent/KR100643425B1/ko
Assigned to 인피니언 테크놀로지스 아게 reassignment 인피니언 테크놀로지스 아게 권리의 전부이전등록 Assignors: 지멘스 악티엔게젤샤프트
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1019990010211A 1998-03-25 1999-03-25 수직형 트랜지스터 및 매립된 워드라인을 갖는 반도체 디바이스 Expired - Fee Related KR100643425B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/047,581 US6172390B1 (en) 1998-03-25 1998-03-25 Semiconductor device with vertical transistor and buried word line
US9/047,581 1998-03-25
US09/047,581 1998-03-25

Publications (2)

Publication Number Publication Date
KR19990078241A KR19990078241A (ko) 1999-10-25
KR100643425B1 true KR100643425B1 (ko) 2006-11-13

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KR1019990010211A Expired - Fee Related KR100643425B1 (ko) 1998-03-25 1999-03-25 수직형 트랜지스터 및 매립된 워드라인을 갖는 반도체 디바이스

Country Status (6)

Country Link
US (1) US6172390B1 (https=)
EP (1) EP0948053B1 (https=)
JP (1) JP5175010B2 (https=)
KR (1) KR100643425B1 (https=)
CN (1) CN1197161C (https=)
TW (1) TW410463B (https=)

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KR101024771B1 (ko) 2008-12-24 2011-03-24 주식회사 하이닉스반도체 매립 워드라인을 갖는 반도체 소자 및 그 제조 방법

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US6610573B2 (en) * 2001-06-22 2003-08-26 Infineon Technologies Ag Method for forming a single wiring level for transistors with planar and vertical gates on the same substrate
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US7224024B2 (en) * 2002-08-29 2007-05-29 Micron Technology, Inc. Single transistor vertical memory gain cell
US6838723B2 (en) * 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
DE10243380A1 (de) * 2002-09-18 2004-04-01 Infineon Technologies Ag Verfahren zur Herstellung einer integrierten Halbleiterschaltung
US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell
US7030436B2 (en) 2002-12-04 2006-04-18 Micron Technology, Inc. Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
DE10257873B3 (de) * 2002-12-11 2004-06-17 Infineon Technologies Ag Dynamische Speicherzelle und Verfahren zur Herstellung derselben
US6727141B1 (en) * 2003-01-14 2004-04-27 International Business Machines Corporation DRAM having offset vertical transistors and method
US6956256B2 (en) * 2003-03-04 2005-10-18 Micron Technology Inc. Vertical gain cell
US6830968B1 (en) * 2003-07-16 2004-12-14 International Business Machines Corporation Simplified top oxide late process
US8518457B2 (en) * 2004-05-11 2013-08-27 Pulmonox Technologies Corporation Use of inhaled gaseous nitric oxide as a mucolytic agent or expectorant
DE102005034387A1 (de) * 2005-07-22 2007-02-08 Infineon Technologies Ag Trench-DRAM-Halbleiterspeicher mit reduziertem Leckstrom
DE102005035641B4 (de) * 2005-07-29 2010-11-25 Qimonda Ag Herstellungsverfahren für eine Speicherzellenanordnung mit gefalteter Bitleitungs-Anordnung und entsprechende Speicherzellenanordnung mit gefalteter Bitleitungs-Anordnung
US20080108212A1 (en) * 2006-10-19 2008-05-08 Atmel Corporation High voltage vertically oriented eeprom device
US7800093B2 (en) * 2007-02-01 2010-09-21 Qimonda North America Corp. Resistive memory including buried word lines
KR100972900B1 (ko) * 2007-12-31 2010-07-28 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
US7948027B1 (en) * 2009-12-10 2011-05-24 Nanya Technology Corp. Embedded bit line structure, field effect transistor structure with the same and method of fabricating the same
KR101139987B1 (ko) * 2010-07-15 2012-05-02 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
TWI553782B (zh) * 2014-04-30 2016-10-11 華邦電子股份有限公司 埋入式字元線及其隔離結構的製造方法
CN105097641B (zh) * 2014-05-09 2017-11-07 华邦电子股份有限公司 埋入式字线及其隔离结构的制造方法
CN109830480B (zh) * 2017-11-23 2022-02-18 联华电子股份有限公司 动态随机存取存储器
US10770585B2 (en) 2018-09-24 2020-09-08 Globalfoundries Inc. Self-aligned buried contact for vertical field-effect transistor and method of production thereof

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR101024771B1 (ko) 2008-12-24 2011-03-24 주식회사 하이닉스반도체 매립 워드라인을 갖는 반도체 소자 및 그 제조 방법

Also Published As

Publication number Publication date
KR19990078241A (ko) 1999-10-25
JPH11330422A (ja) 1999-11-30
EP0948053A3 (en) 2003-08-13
TW410463B (en) 2000-11-01
EP0948053B1 (en) 2014-04-30
CN1230026A (zh) 1999-09-29
EP0948053A2 (en) 1999-10-06
CN1197161C (zh) 2005-04-13
US6172390B1 (en) 2001-01-09
JP5175010B2 (ja) 2013-04-03

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