TW410463B - Semiconductor device with vertical transistor and buried word line - Google Patents
Semiconductor device with vertical transistor and buried word line Download PDFInfo
- Publication number
- TW410463B TW410463B TW088101957A TW88101957A TW410463B TW 410463 B TW410463 B TW 410463B TW 088101957 A TW088101957 A TW 088101957A TW 88101957 A TW88101957 A TW 88101957A TW 410463 B TW410463 B TW 410463B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- semiconductor device
- gate
- buried
- line
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 238000000034 method Methods 0.000 claims description 65
- 230000008569 process Effects 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000002079 cooperative effect Effects 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000002411 adverse Effects 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 238000012876 topography Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 28
- 238000009413 insulation Methods 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 13
- 238000000151 deposition Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 230000000873 masking effect Effects 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000001788 irregular Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000002309 gasification Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 101000931929 Homo sapiens DNA damage-regulated autophagy modulator protein 1 Proteins 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 102000053219 human DRAM1 Human genes 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- -1 sand nitride Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/047,581 US6172390B1 (en) | 1998-03-25 | 1998-03-25 | Semiconductor device with vertical transistor and buried word line |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW410463B true TW410463B (en) | 2000-11-01 |
Family
ID=21949806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088101957A TW410463B (en) | 1998-03-25 | 1999-02-09 | Semiconductor device with vertical transistor and buried word line |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6172390B1 (https=) |
| EP (1) | EP0948053B1 (https=) |
| JP (1) | JP5175010B2 (https=) |
| KR (1) | KR100643425B1 (https=) |
| CN (1) | CN1197161C (https=) |
| TW (1) | TW410463B (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI413214B (zh) * | 2009-12-10 | 2013-10-21 | Nanya Technology Corp | 埋入式位元線結構、具其之場效電晶體結構及其製法 |
| TWI553782B (zh) * | 2014-04-30 | 2016-10-11 | 華邦電子股份有限公司 | 埋入式字元線及其隔離結構的製造方法 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037620A (en) * | 1998-06-08 | 2000-03-14 | International Business Machines Corporation | DRAM cell with transfer device extending along perimeter of trench storage capacitor |
| DE19845003C1 (de) * | 1998-09-30 | 2000-02-10 | Siemens Ag | Vertikaler Feldeffekttransistor mit innenliegendem ringförmigen Gate und Herstellverfahren |
| DE10008814B4 (de) * | 2000-02-25 | 2006-06-29 | Mosel Vitelic Inc. | Aufbau eines Drams mit vertikalem Transistor und dessen Herstellung |
| TW451425B (en) * | 2000-05-16 | 2001-08-21 | Nanya Technology Corp | Manufacturing method for memory cell transistor |
| DE10028424C2 (de) * | 2000-06-06 | 2002-09-19 | Infineon Technologies Ag | Herstellungsverfahren für DRAM-Speicherzellen |
| US6399447B1 (en) * | 2000-07-19 | 2002-06-04 | International Business Machines Corporation | Method of producing dynamic random access memory (DRAM) cell with folded bitline vertical transistor |
| US6284593B1 (en) * | 2000-11-03 | 2001-09-04 | International Business Machines Corporation | Method for shallow trench isolated, contacted well, vertical MOSFET DRAM |
| DE10111755C1 (de) * | 2001-03-12 | 2002-05-16 | Infineon Technologies Ag | Verfahren zur Herstellung einer Speicherzelle eines Halbleiterspeichers |
| US6437388B1 (en) * | 2001-05-25 | 2002-08-20 | Infineon Technologies Ag | Compact trench capacitor memory cell with body contact |
| US6610573B2 (en) * | 2001-06-22 | 2003-08-26 | Infineon Technologies Ag | Method for forming a single wiring level for transistors with planar and vertical gates on the same substrate |
| TW506059B (en) * | 2001-09-25 | 2002-10-11 | Promos Techvologies Inc | Forming method for shallow trench |
| US7224024B2 (en) * | 2002-08-29 | 2007-05-29 | Micron Technology, Inc. | Single transistor vertical memory gain cell |
| US6838723B2 (en) * | 2002-08-29 | 2005-01-04 | Micron Technology, Inc. | Merged MOS-bipolar capacitor memory cell |
| DE10243380A1 (de) * | 2002-09-18 | 2004-04-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer integrierten Halbleiterschaltung |
| US6804142B2 (en) * | 2002-11-12 | 2004-10-12 | Micron Technology, Inc. | 6F2 3-transistor DRAM gain cell |
| US7030436B2 (en) | 2002-12-04 | 2006-04-18 | Micron Technology, Inc. | Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means |
| DE10257873B3 (de) * | 2002-12-11 | 2004-06-17 | Infineon Technologies Ag | Dynamische Speicherzelle und Verfahren zur Herstellung derselben |
| US6727141B1 (en) * | 2003-01-14 | 2004-04-27 | International Business Machines Corporation | DRAM having offset vertical transistors and method |
| US6956256B2 (en) * | 2003-03-04 | 2005-10-18 | Micron Technology Inc. | Vertical gain cell |
| US6830968B1 (en) * | 2003-07-16 | 2004-12-14 | International Business Machines Corporation | Simplified top oxide late process |
| US8518457B2 (en) * | 2004-05-11 | 2013-08-27 | Pulmonox Technologies Corporation | Use of inhaled gaseous nitric oxide as a mucolytic agent or expectorant |
| DE102005034387A1 (de) * | 2005-07-22 | 2007-02-08 | Infineon Technologies Ag | Trench-DRAM-Halbleiterspeicher mit reduziertem Leckstrom |
| DE102005035641B4 (de) * | 2005-07-29 | 2010-11-25 | Qimonda Ag | Herstellungsverfahren für eine Speicherzellenanordnung mit gefalteter Bitleitungs-Anordnung und entsprechende Speicherzellenanordnung mit gefalteter Bitleitungs-Anordnung |
| US20080108212A1 (en) * | 2006-10-19 | 2008-05-08 | Atmel Corporation | High voltage vertically oriented eeprom device |
| US7800093B2 (en) * | 2007-02-01 | 2010-09-21 | Qimonda North America Corp. | Resistive memory including buried word lines |
| KR100972900B1 (ko) * | 2007-12-31 | 2010-07-28 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| KR101024771B1 (ko) | 2008-12-24 | 2011-03-24 | 주식회사 하이닉스반도체 | 매립 워드라인을 갖는 반도체 소자 및 그 제조 방법 |
| KR101139987B1 (ko) * | 2010-07-15 | 2012-05-02 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
| CN105097641B (zh) * | 2014-05-09 | 2017-11-07 | 华邦电子股份有限公司 | 埋入式字线及其隔离结构的制造方法 |
| CN109830480B (zh) * | 2017-11-23 | 2022-02-18 | 联华电子股份有限公司 | 动态随机存取存储器 |
| US10770585B2 (en) | 2018-09-24 | 2020-09-08 | Globalfoundries Inc. | Self-aligned buried contact for vertical field-effect transistor and method of production thereof |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5208657A (en) | 1984-08-31 | 1993-05-04 | Texas Instruments Incorporated | DRAM Cell with trench capacitor and vertical channel in substrate |
| US4824793A (en) | 1984-09-27 | 1989-04-25 | Texas Instruments Incorporated | Method of making DRAM cell with trench capacitor |
| US5225697A (en) | 1984-09-27 | 1993-07-06 | Texas Instruments, Incorporated | dRAM cell and method |
| US5102817A (en) | 1985-03-21 | 1992-04-07 | Texas Instruments Incorporated | Vertical DRAM cell and method |
| US5164917A (en) | 1985-06-26 | 1992-11-17 | Texas Instruments Incorporated | Vertical one-transistor DRAM with enhanced capacitance and process for fabricating |
| JPS62274771A (ja) * | 1986-05-23 | 1987-11-28 | Hitachi Ltd | 半導体メモリ |
| JPS63107061A (ja) * | 1986-10-23 | 1988-05-12 | Toshiba Corp | 半導体記憶装置の製造方法 |
| US4833516A (en) | 1987-08-03 | 1989-05-23 | International Business Machines Corporation | High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor |
| US4949138A (en) * | 1987-10-27 | 1990-08-14 | Texas Instruments Incorporated | Semiconductor integrated circuit device |
| US5227660A (en) * | 1987-11-09 | 1993-07-13 | Hitachi, Ltd. | Semiconductor device |
| JP2606857B2 (ja) * | 1987-12-10 | 1997-05-07 | 株式会社日立製作所 | 半導体記憶装置の製造方法 |
| US5103276A (en) * | 1988-06-01 | 1992-04-07 | Texas Instruments Incorporated | High performance composed pillar dram cell |
| JPH0214563A (ja) * | 1988-07-01 | 1990-01-18 | Matsushita Electron Corp | 半導体記憶装置 |
| US5252845A (en) | 1990-04-02 | 1993-10-12 | Electronics And Telecommunications Research Institute | Trench DRAM cell with vertical transistor |
| JPH0414868A (ja) * | 1990-05-09 | 1992-01-20 | Hitachi Ltd | 半導体記憶装置とその製造方法 |
| JPH0775247B2 (ja) * | 1990-05-28 | 1995-08-09 | 株式会社東芝 | 半導体記憶装置 |
| US5214603A (en) * | 1991-08-05 | 1993-05-25 | International Business Machines Corporation | Folded bitline, ultra-high density dynamic random access memory having access transistors stacked above trench storage capacitors |
| JPH0590534A (ja) * | 1991-09-27 | 1993-04-09 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US5208172A (en) | 1992-03-02 | 1993-05-04 | Motorola, Inc. | Method for forming a raised vertical transistor |
| US5256588A (en) | 1992-03-23 | 1993-10-26 | Motorola, Inc. | Method for forming a transistor and a capacitor for use in a vertically stacked dynamic random access memory cell |
| JPH05291528A (ja) * | 1992-04-09 | 1993-11-05 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| US5448513A (en) * | 1993-12-02 | 1995-09-05 | Regents Of The University Of California | Capacitorless DRAM device on silicon-on-insulator substrate |
| KR960016773B1 (en) | 1994-03-28 | 1996-12-20 | Samsung Electronics Co Ltd | Buried bit line and cylindrical gate cell and forming method thereof |
| US5529944A (en) * | 1995-02-02 | 1996-06-25 | International Business Machines Corporation | Method of making cross point four square folded bitline trench DRAM cell |
| DE19519159C2 (de) * | 1995-05-24 | 1998-07-09 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
| DE19519160C1 (de) | 1995-05-24 | 1996-09-12 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
| US5885864A (en) | 1996-10-24 | 1999-03-23 | Micron Technology, Inc. | Method for forming compact memory cell using vertical devices |
| US5929477A (en) | 1997-01-22 | 1999-07-27 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array |
| US5909618A (en) | 1997-07-08 | 1999-06-01 | Micron Technology, Inc. | Method of making memory cell with vertical transistor and buried word and body lines |
| US5907170A (en) | 1997-10-06 | 1999-05-25 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
| US5831301A (en) * | 1998-01-28 | 1998-11-03 | International Business Machines Corp. | Trench storage dram cell including a step transfer device |
| US5949700A (en) | 1998-05-26 | 1999-09-07 | International Business Machines Corporation | Five square vertical dynamic random access memory cell |
-
1998
- 1998-03-25 US US09/047,581 patent/US6172390B1/en not_active Expired - Lifetime
-
1999
- 1999-02-06 EP EP99102355.7A patent/EP0948053B1/en not_active Expired - Lifetime
- 1999-02-09 TW TW088101957A patent/TW410463B/zh not_active IP Right Cessation
- 1999-03-25 CN CNB991044169A patent/CN1197161C/zh not_active Expired - Lifetime
- 1999-03-25 KR KR1019990010211A patent/KR100643425B1/ko not_active Expired - Fee Related
- 1999-03-25 JP JP08208899A patent/JP5175010B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI413214B (zh) * | 2009-12-10 | 2013-10-21 | Nanya Technology Corp | 埋入式位元線結構、具其之場效電晶體結構及其製法 |
| TWI553782B (zh) * | 2014-04-30 | 2016-10-11 | 華邦電子股份有限公司 | 埋入式字元線及其隔離結構的製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990078241A (ko) | 1999-10-25 |
| JPH11330422A (ja) | 1999-11-30 |
| EP0948053A3 (en) | 2003-08-13 |
| KR100643425B1 (ko) | 2006-11-13 |
| EP0948053B1 (en) | 2014-04-30 |
| CN1230026A (zh) | 1999-09-29 |
| EP0948053A2 (en) | 1999-10-06 |
| CN1197161C (zh) | 2005-04-13 |
| US6172390B1 (en) | 2001-01-09 |
| JP5175010B2 (ja) | 2013-04-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |