KR100633815B1 - 판독 시 및 대기 시에 있어서의 소비 전력을 저감하는것이 가능한 반도체 기억 장치 - Google Patents

판독 시 및 대기 시에 있어서의 소비 전력을 저감하는것이 가능한 반도체 기억 장치 Download PDF

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KR100633815B1
KR100633815B1 KR1020040056297A KR20040056297A KR100633815B1 KR 100633815 B1 KR100633815 B1 KR 100633815B1 KR 1020040056297 A KR1020040056297 A KR 1020040056297A KR 20040056297 A KR20040056297 A KR 20040056297A KR 100633815 B1 KR100633815 B1 KR 100633815B1
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South Korea
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data
signal
inverted
circuit
memory cell
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KR20050012137A (ko
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니이고지
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가부시끼가이샤 르네사스 테크놀로지
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Static Random-Access Memory (AREA)
KR1020040056297A 2003-07-24 2004-07-20 판독 시 및 대기 시에 있어서의 소비 전력을 저감하는것이 가능한 반도체 기억 장치 Expired - Fee Related KR100633815B1 (ko)

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Application Number Priority Date Filing Date Title
JPJP-P-2003-00279239 2003-07-24
JP2003279239A JP4330396B2 (ja) 2003-07-24 2003-07-24 半導体記憶装置

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KR20050012137A KR20050012137A (ko) 2005-01-31
KR100633815B1 true KR100633815B1 (ko) 2006-10-16

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US (2) US6999371B2 (enExample)
JP (1) JP4330396B2 (enExample)
KR (1) KR100633815B1 (enExample)

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JP2005044456A (ja) 2005-02-17
JP4330396B2 (ja) 2009-09-16
US20050018519A1 (en) 2005-01-27
US6999371B2 (en) 2006-02-14
KR20050012137A (ko) 2005-01-31
US7170812B2 (en) 2007-01-30
US20060092746A1 (en) 2006-05-04

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