KR100597860B1 - 원자외선 노광용 포지티브 포토레지스트 조성물 - Google Patents
원자외선 노광용 포지티브 포토레지스트 조성물 Download PDFInfo
- Publication number
- KR100597860B1 KR100597860B1 KR1020000003899A KR20000003899A KR100597860B1 KR 100597860 B1 KR100597860 B1 KR 100597860B1 KR 1020000003899 A KR1020000003899 A KR 1020000003899A KR 20000003899 A KR20000003899 A KR 20000003899A KR 100597860 B1 KR100597860 B1 KR 100597860B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- mol
- photoresist composition
- positive photoresist
- repeating unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D33/00—Details of, or accessories for, sacks or bags
- B65D33/16—End- or aperture-closing arrangements or devices
- B65D33/28—Strings or strip-like closures, i.e. draw closures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65F—GATHERING OR REMOVAL OF DOMESTIC OR LIKE REFUSE
- B65F1/00—Refuse receptacles; Accessories therefor
- B65F1/0006—Flexible refuse receptables, e.g. bags, sacks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP99-018511 | 1999-01-27 | ||
| JP1851199A JP3963602B2 (ja) | 1999-01-27 | 1999-01-27 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20000076528A KR20000076528A (ko) | 2000-12-26 |
| KR100597860B1 true KR100597860B1 (ko) | 2006-07-10 |
Family
ID=11973666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000003899A Expired - Lifetime KR100597860B1 (ko) | 1999-01-27 | 2000-01-27 | 원자외선 노광용 포지티브 포토레지스트 조성물 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6544715B2 (https=) |
| JP (1) | JP3963602B2 (https=) |
| KR (1) | KR100597860B1 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4282185B2 (ja) * | 1999-11-02 | 2009-06-17 | 株式会社東芝 | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
| JP5602981B2 (ja) * | 2000-12-18 | 2014-10-08 | 株式会社ダイセル | 高純度メタクリル酸誘導体の製造法 |
| US6683202B2 (en) * | 2001-02-22 | 2004-01-27 | Tokyo Ohka, Kogyo Co., Ltd. | Fluorine-containing monomeric ester compound for base resin in photoresist composition |
| KR100795109B1 (ko) * | 2001-02-23 | 2008-01-17 | 후지필름 가부시키가이샤 | 포지티브 감광성 조성물 |
| KR100907268B1 (ko) * | 2001-04-05 | 2009-07-13 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법 |
| US7192681B2 (en) | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| JP4149148B2 (ja) * | 2001-08-03 | 2008-09-10 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP4149154B2 (ja) * | 2001-09-28 | 2008-09-10 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP3827290B2 (ja) * | 2001-10-03 | 2006-09-27 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
| JP4491503B2 (ja) * | 2003-06-18 | 2010-06-30 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4439270B2 (ja) | 2003-06-18 | 2010-03-24 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4725739B2 (ja) * | 2003-06-26 | 2011-07-13 | Jsr株式会社 | フォトレジストポリマー組成物 |
| WO2005000924A1 (en) * | 2003-06-26 | 2005-01-06 | Symyx Technologies, Inc. | Photoresist polymers |
| US7250475B2 (en) * | 2003-06-26 | 2007-07-31 | Symyx Technologies, Inc. | Synthesis of photoresist polymers |
| TWI316645B (en) * | 2003-09-18 | 2009-11-01 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition and resist pattern formation method |
| US20050074688A1 (en) * | 2003-10-03 | 2005-04-07 | Toukhy Medhat A. | Bottom antireflective coatings |
| US7189491B2 (en) * | 2003-12-11 | 2007-03-13 | Az Electronic Materials Usa Corp. | Photoresist composition for deep UV and process thereof |
| KR100557236B1 (ko) | 2003-12-30 | 2006-03-07 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그 제조방법 |
| KR100579549B1 (ko) | 2003-12-31 | 2006-05-12 | 엘지.필립스 엘시디 주식회사 | 듀얼 플레이트 타입 유기전계 발광소자 및 그 제조방법 |
| JP2005300998A (ja) * | 2004-04-13 | 2005-10-27 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びレジストパターン形成方法 |
| KR100620437B1 (ko) * | 2005-01-17 | 2006-09-11 | 삼성전자주식회사 | 감광성 폴리머, 이를 포함하는 포토레지스트 조성물 및이를 이용한 포토레지스트 패턴 형성 방법 |
| US20090042123A1 (en) * | 2005-06-01 | 2009-02-12 | Hiroo Kinoshita | Calixresorcinarene compound, photoresist base comprising the same, and composition thereof |
| JP4849860B2 (ja) * | 2005-10-04 | 2012-01-11 | 太陽ホールディングス株式会社 | 光硬化性・熱硬化性樹脂組成物及びその硬化物並びにそれを用いて得られるプリント配線板 |
| JP5618924B2 (ja) * | 2011-06-30 | 2014-11-05 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス |
| JP2020011463A (ja) * | 2018-07-19 | 2020-01-23 | 京セラドキュメントソリューションズ株式会社 | インクジェット記録用前処理液、インクジェット記録装置及び画像形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10221852A (ja) * | 1997-02-06 | 1998-08-21 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| JPH10307398A (ja) * | 1997-05-09 | 1998-11-17 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100195595B1 (ko) * | 1994-07-11 | 1999-06-15 | 니시무로 타이죠 | 감광성 재료 |
| KR100206664B1 (ko) * | 1995-06-28 | 1999-07-01 | 세키사와 다다시 | 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법 |
| JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
| JP3679206B2 (ja) * | 1996-09-20 | 2005-08-03 | 東京応化工業株式会社 | ポジ型レジスト組成物、それを用いた多層レジスト材料及びレジストパターン形成方法 |
| DE69803117T2 (de) * | 1997-05-12 | 2002-10-02 | Fuji Photo Film Co., Ltd. | Positiv arbeitende Resistzusammensetzung |
-
1999
- 1999-01-27 JP JP1851199A patent/JP3963602B2/ja not_active Expired - Lifetime
-
2000
- 2000-01-27 KR KR1020000003899A patent/KR100597860B1/ko not_active Expired - Lifetime
- 2000-01-27 US US09/492,848 patent/US6544715B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10221852A (ja) * | 1997-02-06 | 1998-08-21 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| JPH10307398A (ja) * | 1997-05-09 | 1998-11-17 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6544715B2 (en) | 2003-04-08 |
| US20020098440A1 (en) | 2002-07-25 |
| KR20000076528A (ko) | 2000-12-26 |
| JP3963602B2 (ja) | 2007-08-22 |
| JP2000214588A (ja) | 2000-08-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20000127 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20040511 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20000127 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20051205 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20060401 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20060630 Patent event code: PR07011E01D |
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