KR100589708B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR100589708B1
KR100589708B1 KR1020040104733A KR20040104733A KR100589708B1 KR 100589708 B1 KR100589708 B1 KR 100589708B1 KR 1020040104733 A KR1020040104733 A KR 1020040104733A KR 20040104733 A KR20040104733 A KR 20040104733A KR 100589708 B1 KR100589708 B1 KR 100589708B1
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South Korea
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region
semiconductor layer
potential
semiconductor
semiconductor device
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KR1020040104733A
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English (en)
Korean (ko)
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KR20050082418A (ko
Inventor
시미쯔카즈히로
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10W10/031—
    • H10W10/30—

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020040104733A 2004-02-18 2004-12-13 반도체장치 Expired - Fee Related KR100589708B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00041009 2004-02-18
JP2004041009A JP4593126B2 (ja) 2004-02-18 2004-02-18 半導体装置

Publications (2)

Publication Number Publication Date
KR20050082418A KR20050082418A (ko) 2005-08-23
KR100589708B1 true KR100589708B1 (ko) 2006-06-19

Family

ID=34836400

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040104733A Expired - Fee Related KR100589708B1 (ko) 2004-02-18 2004-12-13 반도체장치

Country Status (7)

Country Link
US (1) US7741695B2 (enExample)
JP (1) JP4593126B2 (enExample)
KR (1) KR100589708B1 (enExample)
CN (1) CN100352058C (enExample)
DE (1) DE102004059627B4 (enExample)
IT (1) ITTO20040595A1 (enExample)
TW (1) TWI249811B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4832841B2 (ja) * 2005-09-22 2011-12-07 三菱電機株式会社 半導体装置
US7642617B2 (en) * 2005-09-28 2010-01-05 Agere Systems Inc. Integrated circuit with depletion mode JFET
JP4783652B2 (ja) * 2006-03-20 2011-09-28 株式会社リコー 高効率電源回路および該高効率電源回路を組み込んだ電子機器
US8445947B2 (en) * 2008-07-04 2013-05-21 Stmicroelectronics (Rousset) Sas Electronic circuit having a diode-connected MOS transistor with an improved efficiency
JP5136544B2 (ja) * 2009-12-16 2013-02-06 三菱電機株式会社 半導体装置
US8618627B2 (en) * 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
JP5719627B2 (ja) * 2011-02-22 2015-05-20 ローム株式会社 地絡保護回路及びこれを用いたスイッチ駆動装置
JP5550681B2 (ja) * 2012-06-19 2014-07-16 三菱電機株式会社 半導体装置
JP5947151B2 (ja) * 2012-08-24 2016-07-06 新電元工業株式会社 高耐圧半導体装置
JP5996969B2 (ja) * 2012-08-24 2016-09-21 新電元工業株式会社 高耐圧半導体装置
JP6319761B2 (ja) * 2013-06-25 2018-05-09 ローム株式会社 半導体装置
CN104426359B (zh) * 2013-09-06 2018-07-06 上海宝芯源功率半导体有限公司 一种集成结型场效应晶体管的自举电路及自举方法
JP6228428B2 (ja) * 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
CN111665669A (zh) * 2015-01-08 2020-09-15 群创光电股份有限公司 显示面板
JP6686721B2 (ja) * 2016-06-15 2020-04-22 富士電機株式会社 半導体集積回路装置
JP6729487B2 (ja) * 2017-05-15 2020-07-22 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
JP7553345B2 (ja) * 2020-12-18 2024-09-18 新電元工業株式会社 電圧変動検出回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321853A (ja) 1997-03-17 1998-12-04 Toshiba Corp 高耐圧半導体装置
KR20040100896A (ko) * 2003-05-20 2004-12-02 미쓰비시덴키 가부시키가이샤 반도체장치, 반도체장치의 제조방법 및 반도체장치의제조프로세스 평가방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
JP2739004B2 (ja) * 1992-01-16 1998-04-08 三菱電機株式会社 半導体装置
US5502632A (en) 1993-05-07 1996-03-26 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
JP3075892B2 (ja) * 1993-07-09 2000-08-14 株式会社東芝 半導体装置
EP0646965B1 (en) * 1993-09-17 1999-01-07 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno An integrated device with a bipolar transistor and a MOSFET transistor in an emitter switching configuration
EP0743752B1 (en) * 1995-05-17 2004-07-28 STMicroelectronics S.r.l. Charging of a bootstrap capacitance through an LDMOS transistor
JP3917211B2 (ja) * 1996-04-15 2007-05-23 三菱電機株式会社 半導体装置
EP0887932A1 (en) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Control of the body voltage of a high voltage LDMOS
EP0887931A1 (en) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Protection circuit for controlling the gate voltage of a high voltage LDMOS transistor
JP3768656B2 (ja) * 1997-09-18 2006-04-19 三菱電機株式会社 半導体装置
JP4610786B2 (ja) * 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
JP4397602B2 (ja) * 2002-05-24 2010-01-13 三菱電機株式会社 半導体装置
JP3928608B2 (ja) * 2003-09-25 2007-06-13 トヨタ自動車株式会社 薄膜半導体素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321853A (ja) 1997-03-17 1998-12-04 Toshiba Corp 高耐圧半導体装置
KR20040100896A (ko) * 2003-05-20 2004-12-02 미쓰비시덴키 가부시키가이샤 반도체장치, 반도체장치의 제조방법 및 반도체장치의제조프로세스 평가방법

Also Published As

Publication number Publication date
ITTO20040595A1 (it) 2004-12-09
JP2005235892A (ja) 2005-09-02
DE102004059627A1 (de) 2005-09-08
KR20050082418A (ko) 2005-08-23
TW200529354A (en) 2005-09-01
JP4593126B2 (ja) 2010-12-08
CN100352058C (zh) 2007-11-28
DE102004059627B4 (de) 2013-12-12
US7741695B2 (en) 2010-06-22
CN1658390A (zh) 2005-08-24
TWI249811B (en) 2006-02-21
US20050179089A1 (en) 2005-08-18

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