KR100571892B1 - 반도체 웨이퍼 상부 표면의 평탄화 방법 - Google Patents

반도체 웨이퍼 상부 표면의 평탄화 방법 Download PDF

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Publication number
KR100571892B1
KR100571892B1 KR1019997010006A KR19997010006A KR100571892B1 KR 100571892 B1 KR100571892 B1 KR 100571892B1 KR 1019997010006 A KR1019997010006 A KR 1019997010006A KR 19997010006 A KR19997010006 A KR 19997010006A KR 100571892 B1 KR100571892 B1 KR 100571892B1
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KR
South Korea
Prior art keywords
wafer
abrasive
exposed
abrasive article
binder
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Expired - Fee Related
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KR1019997010006A
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English (en)
Korean (ko)
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KR20010020384A (ko
Inventor
데이비드 에이. 카이사키
헤써 케이. 크란츠
토마스 이. 우드
엘. 찰스 하디
Original Assignee
미네소타 마이닝 앤드 매뉴팩춰링 캄파니
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Publication of KR20010020384A publication Critical patent/KR20010020384A/ko
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Publication of KR100571892B1 publication Critical patent/KR100571892B1/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1019997010006A 1997-04-30 1998-04-30 반도체 웨이퍼 상부 표면의 평탄화 방법 Expired - Fee Related KR100571892B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US84672697A 1997-04-30 1997-04-30
US8/846,726 1997-04-30
US08/846,726 1997-04-30
PCT/US1998/008693 WO1998049723A1 (en) 1997-04-30 1998-04-30 Method of planarizing the upper surface of a semiconductor wafer

Publications (2)

Publication Number Publication Date
KR20010020384A KR20010020384A (ko) 2001-03-15
KR100571892B1 true KR100571892B1 (ko) 2006-04-18

Family

ID=25298766

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997010006A Expired - Fee Related KR100571892B1 (ko) 1997-04-30 1998-04-30 반도체 웨이퍼 상부 표면의 평탄화 방법

Country Status (12)

Country Link
EP (1) EP1016133B1 (https=)
JP (1) JP2001523395A (https=)
KR (1) KR100571892B1 (https=)
CN (1) CN1165975C (https=)
AT (1) ATE445230T1 (https=)
AU (1) AU734883B2 (https=)
BR (1) BR9809311A (https=)
CA (1) CA2287404C (https=)
DE (1) DE69841220D1 (https=)
MY (1) MY125856A (https=)
TW (1) TW479285B (https=)
WO (1) WO1998049723A1 (https=)

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* Cited by examiner, † Cited by third party
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MY125856A (en) 2006-08-30
EP1016133A1 (en) 2000-07-05
EP1016133B1 (en) 2009-10-07
DE69841220D1 (de) 2009-11-19
BR9809311A (pt) 2000-07-04
CA2287404A1 (en) 1998-11-05
CN1254441A (zh) 2000-05-24
CN1165975C (zh) 2004-09-08
AU734883B2 (en) 2001-06-21
CA2287404C (en) 2007-10-16
AU7170698A (en) 1998-11-24
ATE445230T1 (de) 2009-10-15
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WO1998049723A1 (en) 1998-11-05
JP2001523395A (ja) 2001-11-20

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