BR9809311A - Processo de modificação de uma superfìcie de uma pastilha adequada para fabricação de um dispositivo semicondutor, e, pastilha adequada para fabricação de semicondutores - Google Patents
Processo de modificação de uma superfìcie de uma pastilha adequada para fabricação de um dispositivo semicondutor, e, pastilha adequada para fabricação de semicondutoresInfo
- Publication number
- BR9809311A BR9809311A BR9809311-8A BR9809311A BR9809311A BR 9809311 A BR9809311 A BR 9809311A BR 9809311 A BR9809311 A BR 9809311A BR 9809311 A BR9809311 A BR 9809311A
- Authority
- BR
- Brazil
- Prior art keywords
- wafer
- manufacture
- tablet
- exposed surface
- exposed
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 5
- 239000011230 binding agent Substances 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000007670 refining Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
"PROCESSO DE MODIFICAçãO DE UMA SUPERFìCIE DE UMA PASTILHA ADEQUADA PARA FABRICAçãO DE UM DISPOSITIVO SEMICONDUTOR, E, PASTILHA ADEQUADA PARA FABRICAçãO DE SEMICONDUTORES". Esta invenção diz respeito a um processo para modificar ou refinar a superfície de uma pastilha adequada para a fabricação de um semicondutor. Este processo pode ser usado para modificar uma pastilha que tenha uma superfície exposta não modificada, que compreenda uma camada de segundo material desenvolvido através de pelo menos um aspecto discreto de um primeiro material ligado à pastilha. Uma primeira etapa deste processo compreende o contato e o movimento relativo do compósito abrasivo tridimensional que consista de uma pluralidade de partículas abrasivas fixadas e dispersas em um aglutinante, e manter o contato para efetuar a remoção do segundo material. Em uma segunda etapa, o contato e o movimento relativo são continuados até que uma superfície exposta da pastilha tenha pelo menos uma área do primeiro material exposta, e pelo menos uma área do segundo material exposta.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84672697A | 1997-04-30 | 1997-04-30 | |
PCT/US1998/008693 WO1998049723A1 (en) | 1997-04-30 | 1998-04-30 | Method of planarizing the upper surface of a semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
BR9809311A true BR9809311A (pt) | 2000-07-04 |
Family
ID=25298766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR9809311-8A BR9809311A (pt) | 1997-04-30 | 1998-04-30 | Processo de modificação de uma superfìcie de uma pastilha adequada para fabricação de um dispositivo semicondutor, e, pastilha adequada para fabricação de semicondutores |
Country Status (12)
Country | Link |
---|---|
EP (1) | EP1016133B1 (pt) |
JP (1) | JP2001523395A (pt) |
KR (1) | KR100571892B1 (pt) |
CN (1) | CN1165975C (pt) |
AT (1) | ATE445230T1 (pt) |
AU (1) | AU734883B2 (pt) |
BR (1) | BR9809311A (pt) |
CA (1) | CA2287404C (pt) |
DE (1) | DE69841220D1 (pt) |
MY (1) | MY125856A (pt) |
TW (1) | TW479285B (pt) |
WO (1) | WO1998049723A1 (pt) |
Families Citing this family (116)
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WO2017074773A1 (en) * | 2015-10-30 | 2017-05-04 | Applied Materials, Inc. | An apparatus and method of forming a polishing article that has a desired zeta potential |
US9944829B2 (en) * | 2015-12-03 | 2018-04-17 | Treliant Fang | Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
CN107619116B (zh) | 2016-07-15 | 2021-07-27 | 艺康美国股份有限公司 | 一种无机盐或酸在降低水体系的硬度/碱度中的用途 |
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US11813712B2 (en) | 2019-12-20 | 2023-11-14 | Applied Materials, Inc. | Polishing pads having selectively arranged porosity |
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JP7453874B2 (ja) | 2020-07-30 | 2024-03-21 | 芝浦メカトロニクス株式会社 | 基板処理方法、および基板処理装置 |
CN117733662B (zh) * | 2024-02-19 | 2024-04-16 | 南方科技大学 | 一种基于等离子体刻蚀和改性作用的金刚石抛光方法 |
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US5104421B1 (en) * | 1990-03-23 | 1993-11-16 | Fujimi Abrasives Co.,Ltd. | Polishing method of goods and abrasive pad therefor |
US5222329A (en) * | 1992-03-26 | 1993-06-29 | Micron Technology, Inc. | Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials |
MY114512A (en) * | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
US5622875A (en) * | 1994-05-06 | 1997-04-22 | Kobe Precision, Inc. | Method for reclaiming substrate from semiconductor wafers |
WO1996025270A1 (en) * | 1995-02-15 | 1996-08-22 | Advanced Micro Devices, Inc. | Abrasive-free selective chemo-mechanical polish for tungsten |
US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
-
1998
- 1998-04-30 CN CNB988046741A patent/CN1165975C/zh not_active Expired - Fee Related
- 1998-04-30 BR BR9809311-8A patent/BR9809311A/pt not_active Application Discontinuation
- 1998-04-30 CA CA002287404A patent/CA2287404C/en not_active Expired - Fee Related
- 1998-04-30 WO PCT/US1998/008693 patent/WO1998049723A1/en active IP Right Grant
- 1998-04-30 MY MYPI98001946A patent/MY125856A/en unknown
- 1998-04-30 TW TW087106734A patent/TW479285B/zh not_active IP Right Cessation
- 1998-04-30 DE DE69841220T patent/DE69841220D1/de not_active Expired - Lifetime
- 1998-04-30 EP EP98918864A patent/EP1016133B1/en not_active Expired - Lifetime
- 1998-04-30 JP JP54736698A patent/JP2001523395A/ja active Pending
- 1998-04-30 KR KR1019997010006A patent/KR100571892B1/ko not_active IP Right Cessation
- 1998-04-30 AU AU71706/98A patent/AU734883B2/en not_active Ceased
- 1998-04-30 AT AT98918864T patent/ATE445230T1/de not_active IP Right Cessation
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AU734883B2 (en) | 2001-06-21 |
DE69841220D1 (de) | 2009-11-19 |
WO1998049723A1 (en) | 1998-11-05 |
MY125856A (en) | 2006-08-30 |
AU7170698A (en) | 1998-11-24 |
CN1165975C (zh) | 2004-09-08 |
JP2001523395A (ja) | 2001-11-20 |
ATE445230T1 (de) | 2009-10-15 |
KR20010020384A (ko) | 2001-03-15 |
KR100571892B1 (ko) | 2006-04-18 |
CA2287404C (en) | 2007-10-16 |
TW479285B (en) | 2002-03-11 |
EP1016133B1 (en) | 2009-10-07 |
CN1254441A (zh) | 2000-05-24 |
CA2287404A1 (en) | 1998-11-05 |
EP1016133A1 (en) | 2000-07-05 |
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