DE69919230D1 - Verfahren zur oberflächenmodifizierung von einem strukturierten wafer - Google Patents

Verfahren zur oberflächenmodifizierung von einem strukturierten wafer

Info

Publication number
DE69919230D1
DE69919230D1 DE69919230T DE69919230T DE69919230D1 DE 69919230 D1 DE69919230 D1 DE 69919230D1 DE 69919230 T DE69919230 T DE 69919230T DE 69919230 T DE69919230 T DE 69919230T DE 69919230 D1 DE69919230 D1 DE 69919230D1
Authority
DE
Germany
Prior art keywords
phase
surface modification
modified
structured wafer
abrasive article
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69919230T
Other languages
English (en)
Other versions
DE69919230T2 (de
Inventor
B Pendergrass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of DE69919230D1 publication Critical patent/DE69919230D1/de
Publication of DE69919230T2 publication Critical patent/DE69919230T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69919230T 1999-06-09 1999-10-18 Verfahren zur oberflächenmodifizierung von einem strukturierten wafer Expired - Fee Related DE69919230T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US328916 1999-06-09
US09/328,916 US6234875B1 (en) 1999-06-09 1999-06-09 Method of modifying a surface
PCT/US1999/024445 WO2000074896A1 (en) 1999-06-09 1999-10-18 Method of modifying a surface of a structured wafer

Publications (2)

Publication Number Publication Date
DE69919230D1 true DE69919230D1 (de) 2004-09-09
DE69919230T2 DE69919230T2 (de) 2005-08-04

Family

ID=23283024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69919230T Expired - Fee Related DE69919230T2 (de) 1999-06-09 1999-10-18 Verfahren zur oberflächenmodifizierung von einem strukturierten wafer

Country Status (14)

Country Link
US (1) US6234875B1 (de)
EP (1) EP1189729B1 (de)
JP (1) JP2003501820A (de)
KR (1) KR100638289B1 (de)
CN (1) CN1352589A (de)
AT (1) ATE272465T1 (de)
AU (1) AU1317500A (de)
BR (1) BR9917355A (de)
CA (1) CA2374004A1 (de)
DE (1) DE69919230T2 (de)
ES (1) ES2224717T3 (de)
HK (1) HK1044504B (de)
TW (1) TWI231245B (de)
WO (1) WO2000074896A1 (de)

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US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
US6413153B1 (en) 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US7736687B2 (en) 2006-01-31 2010-06-15 Advance Bio Prosthetic Surfaces, Ltd. Methods of making medical devices
US6976905B1 (en) * 2000-06-16 2005-12-20 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system
CN100484718C (zh) * 2000-12-01 2009-05-06 东洋橡膠工业株式会社 研磨垫用缓冲层
US6572463B1 (en) * 2000-12-27 2003-06-03 Lam Research Corp. Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same
US6561889B1 (en) 2000-12-27 2003-05-13 Lam Research Corporation Methods for making reinforced wafer polishing pads and apparatuses implementing the same
US6612916B2 (en) * 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) * 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) * 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6627550B2 (en) * 2001-03-27 2003-09-30 Micron Technology, Inc. Post-planarization clean-up
US6629879B1 (en) * 2001-05-08 2003-10-07 Advanced Micro Devices, Inc. Method of controlling barrier metal polishing processes based upon X-ray fluorescence measurements
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US6943114B2 (en) * 2002-02-28 2005-09-13 Infineon Technologies Ag Integration scheme for metal gap fill, with fixed abrasive CMP
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US6908366B2 (en) * 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
EP1590127A1 (de) 2003-01-10 2005-11-02 3M Innovative Properties Company Unterlagenkonstruktionen für chemisch-mechanische planarisierungsanwendungen
US6951504B2 (en) * 2003-03-20 2005-10-04 3M Innovative Properties Company Abrasive article with agglomerates and method of use
CN1816422B (zh) * 2003-06-03 2011-06-22 尼克斯普勒公司 用于化学机械平整化的功能分级垫的合成
DE602005006326T2 (de) * 2004-02-05 2009-07-09 Jsr Corp. Chemisch-mechanisches Polierkissen und Polierverfahren
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7150770B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with tie layer, and method of making and using the same
US7150771B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with composite tie layer, and method of making and using the same
US20050282029A1 (en) * 2004-06-18 2005-12-22 3M Innovative Properties Company Polymerizable composition and articles therefrom
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
US7344574B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Coated abrasive article, and method of making and using the same
US7344575B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Composition, treated backing, and abrasive articles containing the same
TWI292185B (en) * 2005-07-11 2008-01-01 Fujitsu Ltd Manufacture of semiconductor device with cmp
US8016644B2 (en) * 2007-07-13 2011-09-13 UNIVERSITé LAVAL Method and apparatus for micro-machining a surface
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
DE102009033206A1 (de) * 2009-07-15 2011-01-27 Brand, Guido Polierverfahren und Poliervorrichtung zur Korrektur von geometrischen Abweichungsfehlern auf Präzisionsoberflächen
BR112013017967A2 (pt) * 2011-01-22 2020-10-27 Rud. Starcke Gmbh & Co. Kg corpo abrasivo
JP5934053B2 (ja) * 2012-08-14 2016-06-15 セイコープレシジョン株式会社 Ｘ線処理装置
JP6640106B2 (ja) 2014-04-03 2020-02-05 スリーエム イノベイティブ プロパティズ カンパニー 研磨パッド及びシステム、並びにその作製方法及び使用方法
TWI769988B (zh) 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法
CN111087973B (zh) * 2019-12-17 2021-07-27 吉林大学 一种植物纤维发酵改性增强摩擦材料制备装置及制备方法

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Publication number Priority date Publication date Assignee Title
US4244775A (en) 1979-04-30 1981-01-13 Bell Telephone Laboratories, Incorporated Process for the chemical etch polishing of semiconductors
DE3677735D1 (de) 1985-12-17 1991-04-04 Max Planck Gesellschaft Verfahren zur herstellung von halbleitersubstraten.
JPS62259769A (ja) * 1986-05-02 1987-11-12 Nec Corp シリコンウエハの加工方法
US5399528A (en) 1989-06-01 1995-03-21 Leibovitz; Jacques Multi-layer fabrication in integrated circuit systems
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
TW307801B (de) 1992-03-19 1997-06-11 Minnesota Mining & Mfg
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
JPH0811050A (ja) 1994-06-28 1996-01-16 Sony Corp 研磨布及びこれを用いた半導体装置の製造方法
AU687598B2 (en) * 1994-09-30 1998-02-26 Minnesota Mining And Manufacturing Company Coated abrasive article, method for preparing the same, and method of using
US5643044A (en) 1994-11-01 1997-07-01 Lund; Douglas E. Automatic chemical and mechanical polishing system for semiconductor wafers
US5791969A (en) 1994-11-01 1998-08-11 Lund; Douglas E. System and method of automatically polishing semiconductor wafers
US5609517A (en) 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
JPH09148285A (ja) 1995-11-27 1997-06-06 Sony Corp 化学的機械研磨粒子及び半導体装置の製造方法
JP3440665B2 (ja) 1995-12-20 2003-08-25 ソニー株式会社 研磨布およびその製造方法
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
TW349896B (en) 1996-05-02 1999-01-11 Applied Materials Inc Apparatus and chemical mechanical polishing system for polishing a substrate
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5759427A (en) 1996-08-28 1998-06-02 International Business Machines Corporation Method and apparatus for polishing metal surfaces
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
KR100487455B1 (ko) 1997-01-13 2005-05-09 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 사진석판술에 의해 유도된 표면 패턴(들)이 있는 연마용 중합체 패드 및 이에 관련된 방법
US6328642B1 (en) 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
US6022268A (en) 1998-04-03 2000-02-08 Rodel Holdings Inc. Polishing pads and methods relating thereto
EP1016133B1 (de) 1997-04-30 2009-10-07 Minnesota Mining And Manufacturing Company Verfahren zum planarisieren der oberfläche eines halbleiterwafers
US6224465B1 (en) 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6056794A (en) * 1999-03-05 2000-05-02 3M Innovative Properties Company Abrasive articles having bonding systems containing abrasive particles

Also Published As

Publication number Publication date
TWI231245B (en) 2005-04-21
HK1044504A1 (en) 2002-10-25
BR9917355A (pt) 2002-02-26
KR20020011435A (ko) 2002-02-08
JP2003501820A (ja) 2003-01-14
AU1317500A (en) 2000-12-28
CA2374004A1 (en) 2000-12-14
KR100638289B1 (ko) 2006-10-26
WO2000074896A8 (en) 2001-03-29
WO2000074896A1 (en) 2000-12-14
CN1352589A (zh) 2002-06-05
ATE272465T1 (de) 2004-08-15
EP1189729A1 (de) 2002-03-27
EP1189729B1 (de) 2004-08-04
US6234875B1 (en) 2001-05-22
DE69919230T2 (de) 2005-08-04
ES2224717T3 (es) 2005-03-01
HK1044504B (zh) 2005-06-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee