BR9917355A - Processo de modificação de uma superfìcie - Google Patents

Processo de modificação de uma superfìcie

Info

Publication number
BR9917355A
BR9917355A BR9917355-7A BR9917355A BR9917355A BR 9917355 A BR9917355 A BR 9917355A BR 9917355 A BR9917355 A BR 9917355A BR 9917355 A BR9917355 A BR 9917355A
Authority
BR
Brazil
Prior art keywords
phase
modified
abrasive article
modifying
abrasive
Prior art date
Application number
BR9917355-7A
Other languages
English (en)
Inventor
Daniel B Pendergrass Jr
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of BR9917355A publication Critical patent/BR9917355A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

"PROCESSO DE MODIFICAçãO DE UMA SUPERFìCIE". Um processo de modificação de uma superfície compreendendo as etapas de: (a) contactar a superfície a ser modificada com uma superfície de trabalho (47) de um artigo abrasivo (40), o artigo abrasivo compreendendo um polimero separado em fase (44) possuindo uma primeira fase e uma segunda fase, a primeira fase sendo mais dura do que a segunda fase; e (b) relativamente movimentar a superfície a ser modificada e o artigo abrasivo fixo para remover material da superfície a ser modificada na ausência de uma suspensão abrasiva.
BR9917355-7A 1999-06-09 1999-10-18 Processo de modificação de uma superfìcie BR9917355A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/328,916 US6234875B1 (en) 1999-06-09 1999-06-09 Method of modifying a surface
PCT/US1999/024445 WO2000074896A1 (en) 1999-06-09 1999-10-18 Method of modifying a surface of a structured wafer

Publications (1)

Publication Number Publication Date
BR9917355A true BR9917355A (pt) 2002-02-26

Family

ID=23283024

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9917355-7A BR9917355A (pt) 1999-06-09 1999-10-18 Processo de modificação de uma superfìcie

Country Status (14)

Country Link
US (1) US6234875B1 (pt)
EP (1) EP1189729B1 (pt)
JP (1) JP2003501820A (pt)
KR (1) KR100638289B1 (pt)
CN (1) CN1352589A (pt)
AT (1) ATE272465T1 (pt)
AU (1) AU1317500A (pt)
BR (1) BR9917355A (pt)
CA (1) CA2374004A1 (pt)
DE (1) DE69919230T2 (pt)
ES (1) ES2224717T3 (pt)
HK (1) HK1044504B (pt)
TW (1) TWI231245B (pt)
WO (1) WO2000074896A1 (pt)

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US6413153B1 (en) 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US7736687B2 (en) * 2006-01-31 2010-06-15 Advance Bio Prosthetic Surfaces, Ltd. Methods of making medical devices
US6976905B1 (en) * 2000-06-16 2005-12-20 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system
CN100496896C (zh) * 2000-12-01 2009-06-10 东洋橡膠工业株式会社 研磨垫
US6572463B1 (en) * 2000-12-27 2003-06-03 Lam Research Corp. Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same
US6561889B1 (en) 2000-12-27 2003-05-13 Lam Research Corporation Methods for making reinforced wafer polishing pads and apparatuses implementing the same
US6612916B2 (en) * 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) * 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6627550B2 (en) * 2001-03-27 2003-09-30 Micron Technology, Inc. Post-planarization clean-up
US6629879B1 (en) * 2001-05-08 2003-10-07 Advanced Micro Devices, Inc. Method of controlling barrier metal polishing processes based upon X-ray fluorescence measurements
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US6943114B2 (en) * 2002-02-28 2005-09-13 Infineon Technologies Ag Integration scheme for metal gap fill, with fixed abrasive CMP
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
KR101018942B1 (ko) * 2003-01-10 2011-03-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 화학 기계적 평탄화 적용을 위한 패드 구조물
US6908366B2 (en) * 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
US6951504B2 (en) * 2003-03-20 2005-10-04 3M Innovative Properties Company Abrasive article with agglomerates and method of use
SG2012073722A (en) * 2003-06-03 2016-11-29 Nexplanar Corp Synthesis of a functionally graded pad for chemical mechanical planarization
DE602005006326T2 (de) * 2004-02-05 2009-07-09 Jsr Corp. Chemisch-mechanisches Polierkissen und Polierverfahren
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7150771B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with composite tie layer, and method of making and using the same
US7150770B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with tie layer, and method of making and using the same
US20050282029A1 (en) * 2004-06-18 2005-12-22 3M Innovative Properties Company Polymerizable composition and articles therefrom
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
US7344574B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Coated abrasive article, and method of making and using the same
US7344575B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Composition, treated backing, and abrasive articles containing the same
TWI292185B (en) * 2005-07-11 2008-01-01 Fujitsu Ltd Manufacture of semiconductor device with cmp
US8016644B2 (en) * 2007-07-13 2011-09-13 UNIVERSITé LAVAL Method and apparatus for micro-machining a surface
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
DE102009033206A1 (de) * 2009-07-15 2011-01-27 Brand, Guido Polierverfahren und Poliervorrichtung zur Korrektur von geometrischen Abweichungsfehlern auf Präzisionsoberflächen
CN103370175B (zh) * 2011-01-22 2016-12-07 鲁德·新特佳两合有限公司 研磨体
JP5934053B2 (ja) * 2012-08-14 2016-06-15 セイコープレシジョン株式会社 Ｘ線処理装置
CN106163740B (zh) 2014-04-03 2019-07-09 3M创新有限公司 抛光垫和系统以及制造和使用该抛光垫和系统的方法
TWI769988B (zh) 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法
CN111087973B (zh) * 2019-12-17 2021-07-27 吉林大学 一种植物纤维发酵改性增强摩擦材料制备装置及制备方法

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DE3677735D1 (de) 1985-12-17 1991-04-04 Max Planck Gesellschaft Verfahren zur herstellung von halbleitersubstraten.
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JPH09148285A (ja) 1995-11-27 1997-06-06 Sony Corp 化学的機械研磨粒子及び半導体装置の製造方法
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US5759427A (en) 1996-08-28 1998-06-02 International Business Machines Corporation Method and apparatus for polishing metal surfaces
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
WO1998030356A1 (en) 1997-01-13 1998-07-16 Rodel, Inc. Polymeric polishing pad having photolithographically induced surface pattern(s) and methods relating thereto
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US6022268A (en) 1998-04-03 2000-02-08 Rodel Holdings Inc. Polishing pads and methods relating thereto
CN1165975C (zh) 1997-04-30 2004-09-08 美国3M公司 对半导体晶片表面进行平整的方法
US6224465B1 (en) 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6056794A (en) * 1999-03-05 2000-05-02 3M Innovative Properties Company Abrasive articles having bonding systems containing abrasive particles

Also Published As

Publication number Publication date
EP1189729B1 (en) 2004-08-04
WO2000074896A8 (en) 2001-03-29
WO2000074896A1 (en) 2000-12-14
HK1044504A1 (en) 2002-10-25
KR100638289B1 (ko) 2006-10-26
JP2003501820A (ja) 2003-01-14
ATE272465T1 (de) 2004-08-15
HK1044504B (zh) 2005-06-30
TWI231245B (en) 2005-04-21
AU1317500A (en) 2000-12-28
KR20020011435A (ko) 2002-02-08
CN1352589A (zh) 2002-06-05
US6234875B1 (en) 2001-05-22
CA2374004A1 (en) 2000-12-14
ES2224717T3 (es) 2005-03-01
DE69919230D1 (de) 2004-09-09
EP1189729A1 (en) 2002-03-27
DE69919230T2 (de) 2005-08-04

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Legal Events

Date Code Title Description
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B11D Dismissal acc. art. 38, par 2 of ipl - failure to pay fee after grant in time