US7086939B2 - Chemical mechanical polishing retaining ring with integral polymer backing - Google Patents

Chemical mechanical polishing retaining ring with integral polymer backing Download PDF

Info

Publication number
US7086939B2
US7086939B2 US10/804,569 US80456904A US7086939B2 US 7086939 B2 US7086939 B2 US 7086939B2 US 80456904 A US80456904 A US 80456904A US 7086939 B2 US7086939 B2 US 7086939B2
Authority
US
United States
Prior art keywords
chemical mechanical
mechanical polishing
retaining ring
polymer
material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US10/804,569
Other versions
US20050208881A1 (en
Inventor
David Wilkinson
Colleen E. Hamilton
Bryan David Hirschorn
Michael John Mangaudis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint-Gobain Performance Plastics Corp
Original Assignee
Saint-Gobain Performance Plastics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint-Gobain Performance Plastics Corp filed Critical Saint-Gobain Performance Plastics Corp
Priority to US10/804,569 priority Critical patent/US7086939B2/en
Assigned to SAINT-GOBAIN PERFORMANCE PLASTICS CORPORATION reassignment SAINT-GOBAIN PERFORMANCE PLASTICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIRSCHOM, BRYAN DAVID, MANGAUDIS, MICHAEL JOHN, HAMILTON, COLLEEN E., WILKINSON, DAVID
Assigned to SAINT-GOBAIN PERFORMANCE PLASTICS CORPORATION reassignment SAINT-GOBAIN PERFORMANCE PLASTICS CORPORATION CORRECTIVE ASSIGNMENT TO CORRECT THE THIRD ASSIGNOR'S NAME. PREVIOUSLY RECORDED ON REEL 014784 FRAME 0209. Assignors: HIRSCHORN, BRYAN DAVID, MANGAUDIS, MICHAEL JOHN, HAMILTON, COLLEEN E., WILKINSON, DAVID
Priority claimed from US11/053,604 external-priority patent/US7485028B2/en
Publication of US20050208881A1 publication Critical patent/US20050208881A1/en
Publication of US7086939B2 publication Critical patent/US7086939B2/en
Application granted granted Critical
Application status is Expired - Fee Related legal-status Critical
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings

Abstract

In one embodiment, the disclosure is directed to a chemical mechanical polishing retaining ring. The chemical mechanical polishing retaining ring includes a support formed of a first material comprising a first polymer and a wear portion formed of a second material comprising a second polymer. The first material has an elastic modulus greater than the elastic modulus of the second material.

Description

TECHNICAL FIELD

The disclosure, in general, relates to chemical mechanical polishing retaining rings and methods for performing chemical mechanical polishing.

BACKGROUND

In semiconductor fabrications, chemical mechanical polishing (CMP) is used for planarization of semiconductor wafers that may be used for the fabrication of very large scale integrated (VLSI) circuits and ultra large scale integrated (ULFI) circuits. Chemical mechanical polishing (CMP), generally, removes material from a layer of a wafer. In a typical CMP process, the wafer is exposed to an abrasive medium under controlled chemical, pressure, velocity, and temperature conditions. The abrasive medium may include slurry solutions containing small abrasive particles such as silicon dioxide and chemically reactive substances such as potassium hydroxide.

Typical chemical mechanical polishing (CMP) processes include a carrier head that holds a wafer against polishing pad. One or both of the polishing pad or carrier head may rotate to effect the polishing of the wafer. Generally, carrier heads include a retaining ring used to hold the wafer within a given boundary. In general, retaining rings are formed either completely of a metal construction or a metal backing with a ring portion of polymer or silicon dioxide. The ring portion typically contacts the polishing pad or surface and the semiconductor wafer.

Typical designs may cause damage to chip edges and surfaces. These designs may further lead to scratched wafer surfaces and altered device properties. As such, an improved CMP retaining ring would be desirable.

SUMMARY

In one embodiment, the disclosure is directed to a chemical mechanical polishing retaining ring. The chemical mechanical polishing retaining ring includes a support portion formed of a first material comprising a first polymer and a wear portion formed of a second material comprising a second polymer. The first material has an elastic modulus greater than the elastic modulus of the second material.

In a further embodiment, the disclosure is directed to a chemical mechanical polishing retaining ring. The chemical mechanical polishing retaining ring includes a support formed of a first material comprising a first polymer matrix and filler and a wear portion formed of a second material comprising a second polymer.

In another embodiment, the disclosure is directed to a chemical mechanical polishing apparatus for wafer polishing. The chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a substrate carrier head having a substrate backing member and a retaining ring. The retaining ring has a first member comprising a first polymer and a second member comprising a second polymer. The first member has an elastic modulus greater than the elastic modulus of the second member.

In a further embodiment, the disclosure is directed to a semiconductor device formed via a process including a polishing step. The polishing step utilizes a polishing apparatus that includes a polishing pad having a polishing surface and a substrate carrier head. The substrate carrier head has a substrate backing member and a retaining ring. The retaining ring has a first member comprising a first polymer and a second member comprising a second polymer. The first member has an elastic modulus greater than the elastic modulus of the second member.

In another embodiment, the disclosure is directed to a method of forming a semiconductor device. The method includes providing a substrate wafer, polishing the substrate wafer with a chemical mechanical polishing apparatus, and forming semiconductor circuitry on the substrate wafer. The chemical mechanical polishing includes a polishing pad having a polishing surface and a substrate carrier head. The substrate carrier head has a substrate backing member and a retaining ring. The retaining ring has a first member comprising a first polymer and a second member comprising a second polymer. The first member has an elastic modulus greater than the elastic modulus of the second member.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure may be better understood, and its numerous objects, features, and advantages made apparent to those skilled in the art by referencing the accompanying drawings.

FIG. 1 depicts an exemplary chemical mechanical polishing apparatus.

FIGS. 2A–2F depict exemplary configurations of a CMP retaining ring.

FIG. 3 depicts an exemplary method of chemical mechanical polishing.

The use of the same reference symbols in different drawings indicates similar or identical items.

DETAILED DESCRIPTION

The disclosure is directed to a chemical mechanical polishing (CMP) apparatus having a CMP retaining ring. In one particular embodiment, the CMP retaining ring is formed of two polymeric materials. The first material includes a polymer, such as polyphenylsulfide (PPS), and filler, such as a polymer, fiberglass or carbon. Alternately, the first material may include a cross-linked polymer. The first material forms a structural component of the CMP retaining ring. The second material includes a polymer and forms a second component of the CMP retaining ring. The second component may contact the wafer and a polishing pad. The disclosure is also directed to a method of producing an integrated circuit device that includes performing CMP using the CMP retaining ring.

FIG. 1 depicts an exemplary chemical mechanical polishing (CMP) apparatus 100. The CMP apparatus 100 includes a carrier 102 and a polishing pad having a polishing surface 112. The carrier 102 includes a wafer backing member 104 and retaining ring 106. The retaining ring 106 and the wafer backing member 104 hold a wafer 108 in place and in contact with the wafer polishing surface 112 during the CMP process. Various mechanisms (not shown) may be used to exert force on wafer 108, such as bellows and other pneumatic mechanisms, which cause wafer backing member 104 to exert force on the wafer 108 in contact with the polishing surface 112. In practice, the polishing may be accomplished with the introduction of a chemical mechanical abrasive medium. The carrier 102 and/or the polishing surface 112 may rotate to facilitate mechanical abrasion.

The retaining ring 106 acts to retain or surround the wafer 108 and horizontally hold the wafer 108 in contact with the wafer backing member 104. The retaining ring 106 generally surrounds the wafer backing member 104. The retaining ring 106 generally extends below the wafer backing member 104 to form a recess for receiving the wafer 108 and effectively bound the wafer 108. The CMP retaining ring 106 generally contacts the chemical mechanical polishing surface 112 during a CMP process. In an alternate embodiment, the retaining ring 106 may extend partially along the vertical edge of the wafer and may or may not contact the polishing surface 112 during the CMP process. The retaining ring 106 may be connected to the carrier 102 using various mechanisms such as fasteners, latches, screws, pins, adhesives, and other connecting or coupling methods.

In the exemplary embodiment of FIG. 1, the retaining ring 106 may include an upper backing portion 114 and a lower contact or wear portion 116. In this exemplary embodiment the lower portion 116 contacts both the wafer 108 and the polishing surface 112 during a CMP process.

In one particular embodiment, the retaining ring may include a lower portion 116 formed of a polymer and an upper portion 114. The polymer of the lower portion 116 may be a polymer such as polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PI), and polybutylene terephthalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), or combinations thereof. Further, the polymer may be a blend, such as, for example, the combinations PEEK/PI or PPS/PI. In another exemplary embodiment, PI may be used as filler in a base of PEEK or PPS polymers. In a further exemplary embodiment, the polymer may be a crosslinked single polymer or crosslinked blend of polymers.

In one exemplary embodiment, the lower portion 116 may include filler. The filler may be organic or inorganic filler. For example, the filler may be carbon, aramide, TiO2, SiO2, alumina, boron nitride, silicon carbide, PTFE, polyester. Fillers may, for example, include abrasives or ceramic. In exemplary embodiments, the filler may include a polymer, such as PTFE, polyester, aramide, PPS, PEEK, polyimide, and combinations thereof. The filler may, for example, be in the form of particulate, fiber or beads. For example, the filler may be a woven fiber, such as a fiberglass or polymeric fabric. In another exemplary embodiment, the filler may be a continuous fiber, such as a fiberglass, carbon, or polymeric fiber. In a further exemplary embodiment, the filler may include carbon in the form of nanotubes, fibers, woven fibers, and continuous fibers. Fibrous materials include materials comprising fibers, woven fibers, continuous fibers, or combinations thereof. The filler may be loaded in percentages between about 5%–95% by weight. For example, the filler may be loaded in percentages between about 5%–50% by weight, such as between about 5% and 30% by weight or between about 20%–50% by weight. In another exemplary embodiment, the filler may be loaded in percentages between about 50% and 85% by weight.

Generally, the lower portion has an elastic modulus of greater than about 350,000 psi, such as greater than about 380,000 psi and greater than about 400,000 psi. Elastic modulus may, for example, be measured using the method described in ASTM D638. The elastic modulus of the lower portion 116 will typically be less than the elastic modulus of the upper portion 114. For example, the percent difference of elastic modulus between the lower portion 116 and the upper portion 114 may be greater than about 5%, such as greater than about 10%, 15% or 20% higher.

The lower portion 116 may be bonded or molded to the backing portion 114. The retaining ring may have an upper portion 114 formed of a polymer matrix material and a filling material. The polymer matrix may be formed of a polymer such as polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PI), and polybutylene terephthalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), or combinations thereof. In one exemplary embodiment, the polymer is PEEK or PPS. In another exemplary embodiment, the polymer may be a crosslinked single polymer or crosslinked blend of polymers. For example, the polymer may include a cross-linked blend of PEEK and PPS.

The upper portion 114 may also include a filling material. The filling material may be organic or inorganic filler. Exemplary embodiments include fillers such as carbon, aramide, TiO2, SiO2, alumina, boron nitride, silicon carbide, PTFE, polyester. The filler may be an abrasive or ceramic. In exemplary embodiments, the filler may include a polymer, such as PTFE, polyester, aramide, PPS, PEEK, polyimide, and combinations thereof. The filler may, for example, be in the form of particulate, fiber or beads. For example, the filler may be a woven fiber, such as a fiberglass or polymeric fabric. In another exemplary embodiment, the filler may be a continuous fiber, such as a fiberglass, carbon, or polymeric fiber. In a further exemplary embodiment, the filler may include carbon in the form of nanotubes, fibers, woven fibers, and continuous fibers. In other exemplary embodiments, the filler may include such fillers as those listed above in relation to lower portion 116. The backing or upper portion 114 may be formed with the polymer matrix and the filling material. The filling material may comprise between about 5% and about 95% by weight of the backing 114. In one exemplary embodiment, the filing material may be between about 25% and about 90% by weight of upper portion 114. In one particular embodiment, the upper portion 114 may be a filled polymer portion including between about 25% and about 60% by weight filling material. In another exemplary embodiment, an upper portion 114 may be a composite material comprising between about 60% and about 90% filling material by weight. In further exemplary embodiments, the filler loading may be between about 20% and about 50% or between about 40% and about 70%.

Generally, the elastic modulus of the upper portion 114 will be greater than about 400,000 psi. For example, the elastic modulus of the upper portion 114 may be greater than about 500,000 psi, greater than about 1,000,000 psi, or as high as 20,000,000 psi. Elastic modulus may, for example, be measured using the method described in ASTM D638. The elastic modulus of the lower portion 116 will typically be less than the elastic modulus of the upper portion 114. For example, the percent difference of elastic modulus between the lower portion 116 and the upper portion 114 may be greater than about 5%, such as greater than about 10%, 15% or 20% higher. In one exemplary embodiment, the elastic modulus of the upper portion 114 may be, for example, greater than 2 times that of the lower portion 116. For examples, the elastic modulus of the upper portion 114 may be greater than about 3, 5, or 8 times that of the lower portion 116.

In one particular embodiment, the polymer of the lower portion 116 and the polymer forming the polymer matrix of the upper portion 114 may be formed of the same polymer, such as polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PI), and polybutylene terephthalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), or combinations thereof. In a further exemplary embodiment, the polymer of lower portion 116 and the polymer of upper portion 114 may be formed from a common monomer, such as those monomers used in the formation of the polymers listed above. In another exemplary embodiment, the polymer may be a crosslinked polymer or crosslinked blend of polymers. For example, the polymer may include a cross-linked blend of PEEK and PPS. The upper portion 114 may include fillers, such as fiberglass, carbon, or combinations thereof.

In one embodiment, the lower portion 116 may be designed to wear and exhibit elasticity. The upper portion 114 may provide structural support and may exhibit lower elasticity. In one exemplary embodiment, the upper portion 114 is stiffer than the lower portion 116. In another exemplary embodiment, the lower portion 116 has a lower Young's modulus than the upper portion 114. For example, the Young's Modulus of the lower portion 116 may be 20% lower than that of the upper portion 114.

In a further exemplary embodiment, the retaining ring 106 may include one or more additional layers. For example, an additional polymeric layer may exist above layer 114 and may be formed to attach to carrier 102. The exemplary polymeric layer is formed of a polymer, such as a thermoplastic. In an exemplary embodiment, the polymer is non-elastomeric. In another exemplary embodiment, the polymer has an elastic modulus greater than about 75,000 psi. For example, the polymer may be PPS, PET, PEEK, PI, PBT, POM, PAI, BPI, or combinations thereof. In another exemplary embodiment, the polymer may be a crosslinked polymer or crosslinked blend of polymers and may include fillers, such as those listed above. In addition, the additional polymeric layer may attach, couple, or connect to carrier 102 using the methods disclosed above.

FIGS. 2A–2E depict exemplary configurations of a CMP retaining ring. FIG. 2A depicts an exemplary embodiment in which a lower portion 204 is connected to an upper portion 202. This arrangement, shown in FIG. 2A may, for example, be formed through co-extruding miscible or compatible polymer layers, co-forming, compression molding, or adhesively coupling layers.

FIG. 2B depicts an exemplary three-layer structure. Layer 230 may be a lower wear portion. Layer 228 may be an upper structural support portion with a higher elastic modulus. Layer 226 may include a polymeric material having properties that lend to machinability and tooling such that connective structures may be formed for connection of the retaining ring to carriers. In one exemplary embodiment, layer 226 has similar composition to that of layer 230. As with the structures of FIG. 2A, the exemplary embodiment of FIG. 2B may be formed through co-forming, compression molding, or adhesively coupling layers.

FIG. 2C depicts an embodiment in which a lower portion 210 is bonded to an upper portion 206 with a bonding layer 208, such as an adhesive. In one exemplary embodiment, the bonding layer 208 may be an epoxy, such as a two-component epoxy or a slow curing epoxy.

FIGS. 2D and 2E depict alternate embodiments in which a support portion 212 or 216 are surrounded or encased by a second portion 214 or 218, respectively. FIG. 2F depicts a further embodiment in which an upper support portion 220 is connected to lower portion 222. The lower support portion 222 has a grooved or shaped surface 224, which may act to guide the flow of abrasive mediums and slurries. Further exemplary embodiments include combinations of those examples shown in FIGS. 2A–2F.

The exemplary embodiments shown in 2A–2F may be formed through several methods, such as injection molding, compression molding, extruding, and bonding. In one exemplary embodiment, the portions may be co-extruded. In another exemplary embodiment, the portions may be separately extruded and bonded together using adhesives such as glues and epoxies, such as a two-part epoxy or a slow curing epoxy. In a further embodiment, a first portion may be formed and a second portion molded around the first portion.

A CMP process utilizing the exemplary retainer rings may be used to form semiconductor and integrated circuit devices. In one exemplary method shown in FIG. 3, a substrate wafer may be provided, as shown at step 302, the substrate wafer may, for example be formed of silicon or gallium. CMP processes may be used at various points during the integrated circuit process. In one exemplary embodiment, devices may be formed on the substrate wafer as shown at step 304 and the wafer subsequently polished, as shown at step 308. For example, devices may be formed in the wafer and connected using a conductive metal layer. CMP processing may be used to remove excess conductive metal to form lines and interconnects. In one exemplary embodiment, metal, such as tungsten, aluminum, copper, or alloys of thereof, is sputtered or deposited on the wafer surface. Excess metal is polished and removed to leave patterned lines of interconnects and expose the underlying dielectric layer.

In another exemplary embodiment, the wafer may be polished, as shown at step 308, and devices formed, as shown at step 310. CMP processes may, for example, be used on the front end polishing prior to and during integrated circuit formation. In another exemplary embodiment, CMP polishing may be used in back end processing to reduce wafer thickness.

The polishing step shown at step 308 may be performed with a chemical mechanical polishing apparatus that includes a retaining ring having a wear portion formed of a polymer and a support portion formed with a polymer matrix and a filling material. CMP processing may utilize a slurry or abrasive medium. The slurry may include oxidizers, such as hydrogen peroxide or potassium hydroxide; etchants, such as organic acids; and corrosion inhibitors, such as benzotriazole (BTA). The slurry may further include abrasives, such as alumina or silica.

The substrate wafer may then be segregated into individual integrated circuit devices, as shown at step 312, and further processed to allow connection to and use of the integrated circuit. Such a process utilizing the CMP apparatus with the retaining ring may improve yield and effectiveness of integrated circuit devices.

Aspects of the invention include a reduction in wafer damage. Metal components in the retaining ring may, if the metal component is in contact with the wafer, damage or chip the wafers' edges, reducing available surface area for effective production of semiconductor devices. Metal may contaminate the abrasive medium or slurry with metal particles and ions, which may further damage the wafer either mechanically or chemically. The invention may improve wafer yield.

The above-disclosed subject matter is to be considered illustrative, and not restrictive, and the appended claims are intended to cover all such modifications, enhancements, and other embodiments, which fall within the scope of the present invention. Thus, to the maximum extent allowed by law, the scope of the present invention is to be determined by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing detailed description.

Claims (45)

1. A chemical mechanical polishing retaining ring comprising:
a support portion formed of a first material comprising a first polymer and between about 5% and about 95% by weigh of a filler; and
a wear portion formed of a second material comprising a second polymer; the first material having an elastic modulus greater than the elastic modulus of the second material.
2. The chemical mechanical polishing retaining ring of claim 1, wherein the filler comprises between about 25% and about 60% by weight of the first material.
3. The chemical mechanical polishing retaining ring of claim 1, wherein the filler comprises between about 60% and about 90% by weight of the first material.
4. The chemical mechanical polishing retaining ring of claim 1, wherein the filler is selected from the group consisting of carbon, glass, ceramic, polymer and combinations thereof.
5. The chemical mechanical polishing retaining ring of claim 1, wherein the filler comprises a fibrous material.
6. The chemical mechanical polishing retaining ring of claim 1, wherein the filler is selected from the group consisting of carbon, TiO2, ceramic, silica, alumina, boron nitride, silicon carbide, aramide, PBS, PEEK, PTFE, polyester and combinations thereof.
7. The chemical mechanical polishing retaining ring of claim 1, wherein the first polymer comprises a crosslinked polymer.
8. The chemical mechanical polishing retaining ring of claim 1, wherein the wear portion comprises a second filler.
9. The chemical mechanical polishing retaining ring of claim 8, wherein the second filler comprises between about 5% and about 85% by weight of the second material.
10. The chemical mechanical polishing retaining ring of claim 1, wherein the wear portion is configured to contact a polishing surface during a chemical mechanical polishing process.
11. The chemical mechanical polishing retaining ring of claim 1, wherein the wear portion is configured to contact a wafer periphery during a chemical mechanical polishing process.
12. The chemical mechanical polishing retaining ring of claim 1, wherein the wear portion forms an axial end of the chemical mechanical polishing retaining ring.
13. The chemical mechanical polishing retaining ring of claim 1, wherein the first polymer is selected from the group consisting of polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PT), and polybutylene terephtbalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), and combinations thereof.
14. The chemical mechanical polishing retaining ring of claim 1, wherein the second polymer is selected from the group consisting of polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PI), and polybutylene terephthalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), and combinations thereof.
15. The chemical mechanical polishing retaining ring of claim 1, wherein the first polymer and the second polymer are formed from a common monomer.
16. The chemical mechanical polishing retaining ring of claim 1, wherein the first material has an elastic modulus greater than about 400,000 psi.
17. A chemical mechanical polishing retaining ring comprising:
a support portion formed of a first material comprising a first polymer;
a wear portion formed of a second material comprising a second polymer: the first material having an elastic modulus greater than the elastic modulus of the second material; and
a coupling layer formed of a third material and configured for coupling the chemical mechanical polishing retaining ring to a carrier, wherein the third material comprises a polymer selected from the group consisting of the first polymer and the second polymer.
18. A chemical mechanical polishing retaining ring comprising:
a support formed of a first material comprising a first polymer matrix and between about 5% and about 95% by weight of a filler; and
a wear portion formed of a second material comprising a second polymer.
19. The chemical mechanical polishing retaining ring of claim 18, further comprising a coupling layer formed of a third material and configured for coupling the chemical mechanical polishing retaining ring to a carrier.
20. The chemical mechanical polishing retaining ring of claim 19, wherein the third material comprises a polymer selected from the group consisting of the first polymer and the second polymer.
21. The chemical mechanical polishing retaining ring of claim 18, wherein the filler comprises between about 25% and about 90% by weight of the first material.
22. The chemical mechanical polishing retaining ring of claim 18, wherein the filler comprises between about 25% and about 60% by weight of the first material.
23. The chemical mechanical polishing retaining ring of claim 18, wherein the filler comprises between about 60% and about 90% by weight of the first material.
24. The chemical mechanical polishing retaining ring of claim 18, wherein the filler is selected from the group consisting of glass, carbon, ceramic, and combinations thereof.
25. The chemical mechanical polishing retaining ring of claim 18, wherein the filler comprise fibrous material.
26. The chemical mechanical polishing retaining ring of claim 18, wherein the wear portion comprises a second filler.
27. The chemical mechanical polishing retaining ring of claim 18, wherein the wear portion is configured to contact a polishing surface during a chemical mechanical polishing process.
28. The chemical mechanical polishing retaining ring of claim 18, wherein the wear portion is configured to contact a wafer periphery during a chemical mechanical polishing process.
29. The chemical mechanical polishing retaining ring of claim 18, wherein the wear portion forms an axial end of the chemical mechanical polishing retaining ring.
30. The chemical mechanical polishing retaining ring of claim 18, wherein the first polymer matrix comprises polymer selected from the group consisting of polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PT), and polybutylene terephthalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), and combinations thereof.
31. The chemical mechanical polishing retaining ring of claim 18, wherein the first polymer matrix comprises a crosslinked polymer.
32. The chemical mechanical polishing retaining ring of claim 18, wherein the second polymer is selected from the group consisting of polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PI), and polybutylene terephthalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), and combinations thereof.
33. The chemical mechanical polishing retaining ring of claim 18, wherein the first material has an elastic modulus greater than the second material elastic modulus.
34. A chemical mechanical polishing apparatus for wafer polishing, the chemical mechanical polishing apparatus comprising:
a polishing pad having a polishing surface; and
a substrate carrier head having a substrate backing member and a retaining ring, the retaining ring having a first member comprising a first polymer and a second member comprising a second polymer; the first member having an elastic modulus greater than the elastic modulus of the second member, the first member comprising between 25% and 90% by weight of a filler.
35. The chemical mechanical polishing apparatus of claim 34, wherein the first polymer comprises crosslinked polymer.
36. The chemical mechanical polishing apparatus of claim 34, wherein the second member is configured to contact a polishing surface during a chemical mechanical polishing process.
37. The chemical mechanical polishing apparatus of claim 34, wherein the second member is configured to contact a wafer periphery during a chemical mechanical polishing process.
38. The chemical mechanical polishing apparatus of claim 34, wherein the substrate backing member is coaxially arranged inside the retaining ring forming a space configured to receive a wafer.
39. A semiconductor device formed via a process comprising a polishing step that utilizes a polishing apparatus comprising a polishing pad having a polishing surface and a substrate carrier head, the substrate carrier head having a substrate backing member and a retaining ring, the retaining ring having a first member comprising a first polymer and a second member comprising a second polymer, the first member having an elastic modulus greater than the elastic modulus of the second member, the first member comprising between 25% and 90% by weight of a filler.
40. The semiconductor device of claim 39, wherein the second member is configured to contact a polishing surface during a chemical mechanical polishing process.
41. The semiconductor device of claim 39, wherein the second member is configured to contact a wafer periphery during a chemical mechanical polishing process.
42. A method of forming a semiconductor device, the method comprising:
providing a substrate wafer;
polishing the substrate wafer with a chemical mechanical polishing apparatus, the chemical mechanical polishing comprising a polishing pad having a polishing surface and a substrate carrier head, the substrate carrier head having a substrate backing member and a retaining ring, the retaining ring having a first member comprising a first polymer and a second member comprising a second polymer, the first member having an elastic modulus greater than the elastic modulus of the second member, the first member comprising between 25% and 90% by weight of a filler; and
forming semiconductor circuitry on the substrate wafer.
43. The method of claim 42, wherein the second member is configured to contact a wafer periphery during a chemical mechanical polishing process.
44. The method of claim 42, wherein the first polymer is selected from the group consisting of polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PI), and polybutylene terephthalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), and combinations thereof.
45. The method of claim 42, wherein the second polymer is selected from the group consisting of polyphenylsulfide (PPS), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyimide (PI), and polybutylene terephthalate (PBT), acetal polyoxymethylene (POM), polyamideimide (PAI), polybenzimidazole (BPI), and combinations thereof.
US10/804,569 2004-03-19 2004-03-19 Chemical mechanical polishing retaining ring with integral polymer backing Expired - Fee Related US7086939B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/804,569 US7086939B2 (en) 2004-03-19 2004-03-19 Chemical mechanical polishing retaining ring with integral polymer backing

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/804,569 US7086939B2 (en) 2004-03-19 2004-03-19 Chemical mechanical polishing retaining ring with integral polymer backing
US11/053,604 US7485028B2 (en) 2004-03-19 2005-02-08 Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
PCT/US2005/009195 WO2005092010A2 (en) 2004-03-19 2005-03-18 Chemical mechanical polishing retaining ring

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/053,604 Continuation-In-Part US7485028B2 (en) 2004-03-19 2005-02-08 Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same

Publications (2)

Publication Number Publication Date
US20050208881A1 US20050208881A1 (en) 2005-09-22
US7086939B2 true US7086939B2 (en) 2006-08-08

Family

ID=34986978

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/804,569 Expired - Fee Related US7086939B2 (en) 2004-03-19 2004-03-19 Chemical mechanical polishing retaining ring with integral polymer backing

Country Status (1)

Country Link
US (1) US7086939B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050215181A1 (en) * 2004-03-19 2005-09-29 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
WO2008024721A2 (en) * 2006-08-22 2008-02-28 Ebara Technologies, Inc. Ethylene terephthalate polymer retaining ring for a chemical mechanical polishing head
US20100041323A1 (en) * 2005-05-24 2010-02-18 Entegris, Inc. Cmp retaining ring
US8264137B2 (en) 2006-01-03 2012-09-11 Samsung Electronics Co., Ltd. Curing binder material for carbon nanotube electron emission cathodes

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US20100112905A1 (en) * 2008-10-30 2010-05-06 Leonard Borucki Wafer head template for chemical mechanical polishing and a method for its use
KR101206782B1 (en) 2011-02-18 2012-11-30 한상효 Retainer Ring for Polishing Wafer and Method of Manufacturing the Same
WO2013022624A2 (en) * 2011-08-05 2013-02-14 Applied Materials, Inc. Two-part plastic retaining ring
KR101328411B1 (en) 2012-11-05 2013-11-13 한상효 Method of manufacturing retainer ring for polishing wafer
US20150021498A1 (en) * 2013-07-17 2015-01-22 Applied Materials, Inc. Chemical mechanical polishing retaining ring methods and apparatus
US9744640B2 (en) 2015-10-16 2017-08-29 Applied Materials, Inc. Corrosion resistant retaining rings
CN107538342A (en) * 2016-06-24 2018-01-05 上海新昇半导体科技有限公司 Wafer holding plate assembly, polishing device and wafer fine-polishing method

Citations (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5944593A (en) 1997-09-01 1999-08-31 United Microelectronics Corp. Retainer ring for polishing head of chemical-mechanical polish machines
US6062963A (en) 1997-12-01 2000-05-16 United Microelectronics Corp. Retainer ring design for polishing head of chemical-mechanical polishing machine
US6136713A (en) 1998-07-31 2000-10-24 United Microelectronics Corp. Method for forming a shallow trench isolation structure
US6186880B1 (en) 1999-09-29 2001-02-13 Semiconductor Equipment Technology Recyclable retaining ring assembly for a chemical mechanical polishing apparatus
US6224472B1 (en) 1999-06-24 2001-05-01 Samsung Austin Semiconductor, L.P. Retaining ring for chemical mechanical polishing
US6234875B1 (en) 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
US6251215B1 (en) 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
US6347979B1 (en) 1998-09-29 2002-02-19 Vsli Technology, Inc. Slurry dispensing carrier ring
US20020058426A1 (en) 2000-08-11 2002-05-16 Mandigo Glenn C. Chemical mechanical planarization of metal substrates
US6390904B1 (en) 1998-05-21 2002-05-21 Applied Materials, Inc. Retainers and non-abrasive liners used in chemical mechanical polishing
US6413153B1 (en) 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
US6419567B1 (en) 2000-08-14 2002-07-16 Semiconductor 300 Gmbh & Co. Kg Retaining ring for chemical-mechanical polishing (CMP) head, polishing apparatus, slurry cycle system, and method
US20020106980A1 (en) 2001-02-07 2002-08-08 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US20020111120A1 (en) 2001-02-15 2002-08-15 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
WO2002066207A1 (en) 2001-02-20 2002-08-29 Ebara Corporation Polishing apparatus and dressing method
EP1243617A1 (en) 1999-09-30 2002-09-25 Daikin Industries, Ltd. Transparent elastomer composition
US6468136B1 (en) 2000-06-30 2002-10-22 Applied Materials, Inc. Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching
US6471566B1 (en) 2000-09-18 2002-10-29 Lam Research Corporation Sacrificial retaining ring CMP system and methods for implementing the same
US20020173255A1 (en) 1995-06-09 2002-11-21 Norman Shendon Chemical mechanical polishing retaining ring
US6602114B1 (en) 2000-05-19 2003-08-05 Applied Materials Inc. Multilayer retaining ring for chemical mechanical polishing
US20030148614A1 (en) 2002-02-04 2003-08-07 Simpson Alexander William Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
US6623337B2 (en) 2000-06-30 2003-09-23 Rodel Holdings, Inc. Base-pad for a polishing pad
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
EP1386695A2 (en) 2002-08-02 2004-02-04 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20040023609A1 (en) 2001-08-03 2004-02-05 Tetsuya Oshita Wafer holding ring for checmial and mechanical polisher
US20040040656A1 (en) 2002-08-28 2004-03-04 Hengel Raymond J. Method and apparatus for CMP retaining ring
US6705932B1 (en) * 1999-01-23 2004-03-16 Applied Materials, Inc. Carrier head for chemical mechanical polishing
US20040067723A1 (en) 2002-10-02 2004-04-08 Ensinger Kunstsofftechnologie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus
US20040065412A1 (en) 2002-10-02 2004-04-08 Ensinger Kunststofftechnologie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus
US6719615B1 (en) 2000-10-10 2004-04-13 Beaver Creek Concepts Inc Versatile wafer refining
US6758939B2 (en) 2001-08-31 2004-07-06 Speedfam-Ipec Corporation Laminated wear ring
US6899610B2 (en) 2001-06-01 2005-05-31 Raytech Innovative Solutions, Inc. Retaining ring with wear pad for use in chemical mechanical planarization
US20050208881A1 (en) * 2004-03-19 2005-09-22 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US20050215181A1 (en) * 2004-03-19 2005-09-29 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same

Patent Citations (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020173255A1 (en) 1995-06-09 2002-11-21 Norman Shendon Chemical mechanical polishing retaining ring
US5944593A (en) 1997-09-01 1999-08-31 United Microelectronics Corp. Retainer ring for polishing head of chemical-mechanical polish machines
US6062963A (en) 1997-12-01 2000-05-16 United Microelectronics Corp. Retainer ring design for polishing head of chemical-mechanical polishing machine
US6390904B1 (en) 1998-05-21 2002-05-21 Applied Materials, Inc. Retainers and non-abrasive liners used in chemical mechanical polishing
US6251215B1 (en) 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
US6136713A (en) 1998-07-31 2000-10-24 United Microelectronics Corp. Method for forming a shallow trench isolation structure
US6347979B1 (en) 1998-09-29 2002-02-19 Vsli Technology, Inc. Slurry dispensing carrier ring
US6705932B1 (en) * 1999-01-23 2004-03-16 Applied Materials, Inc. Carrier head for chemical mechanical polishing
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
US6413153B1 (en) 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
US6234875B1 (en) 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
US6224472B1 (en) 1999-06-24 2001-05-01 Samsung Austin Semiconductor, L.P. Retaining ring for chemical mechanical polishing
US6186880B1 (en) 1999-09-29 2001-02-13 Semiconductor Equipment Technology Recyclable retaining ring assembly for a chemical mechanical polishing apparatus
EP1243617A1 (en) 1999-09-30 2002-09-25 Daikin Industries, Ltd. Transparent elastomer composition
US6602114B1 (en) 2000-05-19 2003-08-05 Applied Materials Inc. Multilayer retaining ring for chemical mechanical polishing
US6468136B1 (en) 2000-06-30 2002-10-22 Applied Materials, Inc. Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching
US6623337B2 (en) 2000-06-30 2003-09-23 Rodel Holdings, Inc. Base-pad for a polishing pad
US20020058426A1 (en) 2000-08-11 2002-05-16 Mandigo Glenn C. Chemical mechanical planarization of metal substrates
US6419567B1 (en) 2000-08-14 2002-07-16 Semiconductor 300 Gmbh & Co. Kg Retaining ring for chemical-mechanical polishing (CMP) head, polishing apparatus, slurry cycle system, and method
US6471566B1 (en) 2000-09-18 2002-10-29 Lam Research Corporation Sacrificial retaining ring CMP system and methods for implementing the same
US6719615B1 (en) 2000-10-10 2004-04-13 Beaver Creek Concepts Inc Versatile wafer refining
US20020106980A1 (en) 2001-02-07 2002-08-08 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US20020111120A1 (en) 2001-02-15 2002-08-15 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
WO2002066207A1 (en) 2001-02-20 2002-08-29 Ebara Corporation Polishing apparatus and dressing method
US6899610B2 (en) 2001-06-01 2005-05-31 Raytech Innovative Solutions, Inc. Retaining ring with wear pad for use in chemical mechanical planarization
EP1418614A1 (en) 2001-08-03 2004-05-12 Clariant International Ltd. Wafer holding ring for chemical and mechanical polisher
US20040023609A1 (en) 2001-08-03 2004-02-05 Tetsuya Oshita Wafer holding ring for checmial and mechanical polisher
US6758939B2 (en) 2001-08-31 2004-07-06 Speedfam-Ipec Corporation Laminated wear ring
US20030148614A1 (en) 2002-02-04 2003-08-07 Simpson Alexander William Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
EP1386695A2 (en) 2002-08-02 2004-02-04 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20040040656A1 (en) 2002-08-28 2004-03-04 Hengel Raymond J. Method and apparatus for CMP retaining ring
US20040067723A1 (en) 2002-10-02 2004-04-08 Ensinger Kunstsofftechnologie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus
US20040065412A1 (en) 2002-10-02 2004-04-08 Ensinger Kunststofftechnologie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus
US20050208881A1 (en) * 2004-03-19 2005-09-22 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US20050215181A1 (en) * 2004-03-19 2005-09-29 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050215181A1 (en) * 2004-03-19 2005-09-29 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US7485028B2 (en) * 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US20100041323A1 (en) * 2005-05-24 2010-02-18 Entegris, Inc. Cmp retaining ring
US7857683B2 (en) 2005-05-24 2010-12-28 Entegris, Inc. CMP retaining ring
US8264137B2 (en) 2006-01-03 2012-09-11 Samsung Electronics Co., Ltd. Curing binder material for carbon nanotube electron emission cathodes
US20080051011A1 (en) * 2006-08-22 2008-02-28 Gerard Stephen Moloney Ethylene terephthalate polymer retaining ring for a chemical mechanical polishing head
WO2008024721A3 (en) * 2006-08-22 2008-07-24 Ebara Tech Inc Ethylene terephthalate polymer retaining ring for a chemical mechanical polishing head
WO2008024721A2 (en) * 2006-08-22 2008-02-28 Ebara Technologies, Inc. Ethylene terephthalate polymer retaining ring for a chemical mechanical polishing head

Also Published As

Publication number Publication date
US20050208881A1 (en) 2005-09-22

Similar Documents

Publication Publication Date Title
US6070570A (en) Wire-saw and its manufacturing method
US5897426A (en) Chemical mechanical polishing with multiple polishing pads
US6573158B2 (en) Methods of processing semiconductor wafer and producing IC card, and carrier
CN102420114B (en) Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
US7871309B2 (en) Polishing pad
US5692950A (en) Abrasive construction for semiconductor wafer modification
US6419568B1 (en) Fixed abrasive polishing pad
US20040152400A1 (en) Polishing apparatus
US7329598B2 (en) Method of manufacturing a semiconductor device
JP2917992B1 (en) Polishing apparatus
EP1211023B1 (en) Polishing body, polisher, polishing method, and method for producing semiconductor device
CN101022918B (en) Polishing pad and method for manufacturing polishing pad
US5131968A (en) Gradient chuck method for wafer bonding employing a convex pressure
TWI265958B (en) CMP polishing agent, a method for polishing a substrate and method for manufacturing semiconductor device using the same, and an additive for CMP polishing agent
USRE39413E1 (en) Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers
KR100571449B1 (en) The polishing pad for chemical mechanical planarization
JP4171846B2 (en) Polishing pad and its manufacturing method having covalently feeding engaged particles
Jairath et al. Chemical-mechanical polishing: Process manufacturability
Zhang et al. The role of particle adhesion and surface deformation in chemical mechanical polishing processes
JP5339680B2 (en) Polishing of the surface
US7427811B2 (en) Semiconductor substrate
US6953388B2 (en) Polishing pad, and method and apparatus for polishing
JP2006111700A (en) Scouring pad
KR20010022464A (en) Polishing semiconductor wafers
EP1020501A3 (en) Aqueous chemical mechanical polishing dispersion composition, wafer surface polishing process and manufacturing process of a semiconductor device

Legal Events

Date Code Title Description
AS Assignment

Owner name: SAINT-GOBAIN PERFORMANCE PLASTICS CORPORATION, NEW

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WILKINSON, DAVID;HAMILTON, COLLEEN E.;HIRSCHOM, BRYAN DAVID;AND OTHERS;REEL/FRAME:014784/0209;SIGNING DATES FROM 20040504 TO 20040510

AS Assignment

Owner name: SAINT-GOBAIN PERFORMANCE PLASTICS CORPORATION, NEW

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE THIRD ASSIGNOR'S NAME. PREVIOUSLY RECORDED ON REEL 014784 FRAME 0209;ASSIGNORS:WILKINSON, DAVID;HAMILTON, COLLEEN E.;HIRSCHORN, BRYAN DAVID;AND OTHERS;REEL/FRAME:014851/0780;SIGNING DATES FROM 20040504 TO 20040510

CC Certificate of correction
FPAY Fee payment

Year of fee payment: 4

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Expired due to failure to pay maintenance fee

Effective date: 20140808