JP2001523395A - 半導体ウェーハの上面を平坦化する方法 - Google Patents

半導体ウェーハの上面を平坦化する方法

Info

Publication number
JP2001523395A
JP2001523395A JP54736698A JP54736698A JP2001523395A JP 2001523395 A JP2001523395 A JP 2001523395A JP 54736698 A JP54736698 A JP 54736698A JP 54736698 A JP54736698 A JP 54736698A JP 2001523395 A JP2001523395 A JP 2001523395A
Authority
JP
Japan
Prior art keywords
abrasive
wafer
exposed
abrasive article
article
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP54736698A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001523395A5 (https=
Inventor
カイサキ，デイビッド・エイ
クランツ，ヘザー・ケイ
ウッド，トーマス・イー
ハーディ，エル・チャールズ
Original Assignee
ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー filed Critical ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー
Publication of JP2001523395A publication Critical patent/JP2001523395A/ja
Publication of JP2001523395A5 publication Critical patent/JP2001523395A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP54736698A 1997-04-30 1998-04-30 半導体ウェーハの上面を平坦化する方法 Pending JP2001523395A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US84672697A 1997-04-30 1997-04-30
US08/846,726 1997-04-30
PCT/US1998/008693 WO1998049723A1 (en) 1997-04-30 1998-04-30 Method of planarizing the upper surface of a semiconductor wafer

Publications (2)

Publication Number Publication Date
JP2001523395A true JP2001523395A (ja) 2001-11-20
JP2001523395A5 JP2001523395A5 (https=) 2005-11-24

Family

ID=25298766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54736698A Pending JP2001523395A (ja) 1997-04-30 1998-04-30 半導体ウェーハの上面を平坦化する方法

Country Status (12)

Country Link
EP (1) EP1016133B1 (https=)
JP (1) JP2001523395A (https=)
KR (1) KR100571892B1 (https=)
CN (1) CN1165975C (https=)
AT (1) ATE445230T1 (https=)
AU (1) AU734883B2 (https=)
BR (1) BR9809311A (https=)
CA (1) CA2287404C (https=)
DE (1) DE69841220D1 (https=)
MY (1) MY125856A (https=)
TW (1) TW479285B (https=)
WO (1) WO1998049723A1 (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003507895A (ja) * 1999-08-13 2003-02-25 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う化学機械的研磨系及びその使用方法
JP2006506809A (ja) * 2002-11-12 2006-02-23 アーケマ・インコーポレイテッド スルホン化両性剤を使用した銅の化学的機械的研磨溶液
JP2010537404A (ja) * 2007-08-15 2010-12-02 スリーエム イノベイティブ プロパティズ カンパニー 半導体製作に適した表面に改質するための組成物及び方法
JP2011066383A (ja) * 2009-09-18 2011-03-31 Choko Kaihatsu Kagi Kofun Yugenkoshi シリコン貫通ビア構造を有する半導体ウェハーの研磨方法、及びそれに使用する研磨組成物
JP2012502501A (ja) * 2008-09-12 2012-01-26 フエロ コーポレーション 化学的機械研磨用組成物、その製造方法、及びその使用方法
KR20160043025A (ko) * 2013-08-10 2016-04-20 어플라이드 머티어리얼스, 인코포레이티드 제어된 컨디셔닝을 용이하게 하는 재료 조성을 갖는 ｃｍｐ 패드들
KR20170065437A (ko) * 2015-12-03 2017-06-13 트레리안트 팡 SiC 웨이퍼용 CMP 물질 제거율을 향상시키기 위한 실리콘 카바이드 에천트로서의 할라이트 염
KR20200140748A (ko) * 2019-06-07 2020-12-16 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 엽상 돌출 구조체를 갖는 cmp 연마 패드
JP2022026021A (ja) * 2020-07-30 2022-02-10 芝浦メカトロニクス株式会社 基板処理方法、および基板処理装置

Families Citing this family (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP3560484B2 (ja) 1998-08-05 2004-09-02 昭和電工株式会社 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
EP1137056B1 (en) 1998-08-31 2013-07-31 Hitachi Chemical Company, Ltd. Abrasive liquid for metal and method for polishing
SG99289A1 (en) * 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6245690B1 (en) 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6206756B1 (en) * 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
CN1803964B (zh) * 1998-12-28 2010-12-15 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
JP2000252243A (ja) * 1998-12-28 2000-09-14 Hitachi Chem Co Ltd 金属用研磨液及びそれを用いた研磨方法
JP5429104B2 (ja) * 1998-12-28 2014-02-26 日立化成株式会社 金属用研磨液及びそれを用いた研磨方法
JP4866831B2 (ja) * 1998-12-28 2012-02-01 日立化成工業株式会社 金属用研磨液を用いる研磨方法
KR20010020807A (ko) 1999-05-03 2001-03-15 조셉 제이. 스위니 고정 연마재 제품을 사전-조절하는 방법
US6234875B1 (en) * 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
EP1212789A1 (en) * 1999-07-19 2002-06-12 MEMC Electronic Materials, Inc. Polishing mixture and process for reducing incorporation of copper into silicon wafers
TWI254070B (en) * 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
WO2001017006A1 (en) 1999-08-26 2001-03-08 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP4264781B2 (ja) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP4657408B2 (ja) * 1999-10-13 2011-03-23 株式会社トクヤマ 金属膜用研磨剤
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6503418B2 (en) * 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US6379223B1 (en) 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US7041599B1 (en) 1999-12-21 2006-05-09 Applied Materials Inc. High through-put Cu CMP with significantly reduced erosion and dishing
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
JP2001185550A (ja) * 1999-12-24 2001-07-06 Kishimoto Sangyo Co Ltd 半導体装置用の被膜形成剤
US6746311B1 (en) 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US6228771B1 (en) * 2000-03-23 2001-05-08 Infineon Technologies North America Corp. Chemical mechanical polishing process for low dishing of metal lines in semiconductor wafer fabrication
WO2001077241A2 (en) * 2000-04-05 2001-10-18 Applied Materials, Inc. Composition for metal cmp with low dishing and overpolish insensitivity
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6616513B1 (en) 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
US6313038B1 (en) * 2000-04-26 2001-11-06 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US6858540B2 (en) 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
EP1177858A1 (en) * 2000-08-02 2002-02-06 Applied Materials, Inc. Fixed-abrasive belt polisher
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US6602117B1 (en) 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6702954B1 (en) * 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US20020068454A1 (en) 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US6896776B2 (en) 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US7012025B2 (en) 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
US6620027B2 (en) 2001-01-09 2003-09-16 Applied Materials Inc. Method and apparatus for hard pad polishing
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
US6613200B2 (en) 2001-01-26 2003-09-02 Applied Materials, Inc. Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7160432B2 (en) 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US20020173243A1 (en) * 2001-04-05 2002-11-21 Costas Wesley D. Polishing composition having organic polymer particles
JP4707864B2 (ja) * 2001-04-18 2011-06-22 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
DE10121556A1 (de) 2001-05-03 2002-11-14 Infineon Technologies Ag Verfahren zum Rückseitenschleifen von Wafern
US6837779B2 (en) 2001-05-07 2005-01-04 Applied Materials, Inc. Chemical mechanical polisher with grooved belt
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US7104869B2 (en) 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US7008554B2 (en) 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US6821881B2 (en) 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
US6863794B2 (en) 2001-09-21 2005-03-08 Applied Materials, Inc. Method and apparatus for forming metal layers
US6838149B2 (en) * 2001-12-13 2005-01-04 3M Innovative Properties Company Abrasive article for the deposition and polishing of a conductive material
US6951599B2 (en) 2002-01-22 2005-10-04 Applied Materials, Inc. Electropolishing of metallic interconnects
US6837983B2 (en) 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7199056B2 (en) 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
JP4010903B2 (ja) 2002-08-02 2007-11-21 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7037174B2 (en) 2002-10-03 2006-05-02 Applied Materials, Inc. Methods for reducing delamination during chemical mechanical polishing
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
JP2006513573A (ja) * 2003-01-10 2006-04-20 スリーエム イノベイティブ プロパティズ カンパニー 化学的機械的平坦化用途向けのパッド構成体
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US7160178B2 (en) * 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
US7435162B2 (en) 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
WO2007094869A2 (en) 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
US20070191506A1 (en) * 2006-02-13 2007-08-16 3M Innovative Properties Company Curable compositions for optical articles
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
DE102009048436B4 (de) * 2009-10-07 2012-12-20 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe
CN102399494B (zh) * 2010-09-10 2014-12-31 安集微电子（上海）有限公司 一种化学机械抛光液
CN102581762A (zh) * 2012-04-01 2012-07-18 北京华进创威电子有限公司 一种晶体加工平磨料台
JP2015532895A (ja) * 2012-09-21 2015-11-16 スリーエム イノベイティブ プロパティズ カンパニー Ｃｍｐ性能を改善するための固定研磨ウェブへの添加剤の配合
SG11201602206PA (en) * 2013-09-25 2016-04-28 3M Innovative Properties Co Composite ceramic abrasive polishing solution
JP6599322B2 (ja) * 2013-10-21 2019-10-30 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面の残留物を除去するための洗浄配合物
KR20230129193A (ko) 2013-12-06 2023-09-06 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
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US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
SG11201703114QA (en) 2014-10-17 2017-06-29 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US11027398B2 (en) * 2015-06-19 2021-06-08 Bando Chemical Industries, Ltd. Grinding material and production method of grinding material
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
CN107619116B (zh) 2016-07-15 2021-07-27 艺康美国股份有限公司 一种无机盐或酸在降低水体系的硬度/碱度中的用途
CN107116420A (zh) * 2017-05-27 2017-09-01 青岛鲁航气囊护舷有限公司 一种双曲面磨砂装置
CN107655408A (zh) * 2017-09-26 2018-02-02 北京工业大学 一种用于提高晶体键合质量的晶体表面加工质量表征方法
CN108453619B (zh) * 2017-12-30 2020-02-21 苏州赛尔科技有限公司 蓝宝石衬底用减薄砂轮
CN111902379B (zh) 2018-03-28 2023-02-17 富士胶片电子材料美国有限公司 清洗组合物
CN109397070A (zh) * 2018-10-24 2019-03-01 中国科学院上海技术物理研究所 一种磷化铟晶圆片及其外延晶圆片的衬底抛光模具
US11680340B2 (en) * 2018-12-13 2023-06-20 Axt, Inc. Low etch pit density 6 inch semi-insulating gallium arsenide wafers
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
CN117733662B (zh) * 2024-02-19 2024-04-16 南方科技大学 一种基于等离子体刻蚀和改性作用的金刚石抛光方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104421B1 (en) * 1990-03-23 1993-11-16 Fujimi Abrasives Co.,Ltd. Polishing method of goods and abrasive pad therefor
US5222329A (en) * 1992-03-26 1993-06-29 Micron Technology, Inc. Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5622875A (en) * 1994-05-06 1997-04-22 Kobe Precision, Inc. Method for reclaiming substrate from semiconductor wafers
WO1996025270A1 (en) * 1995-02-15 1996-08-22 Advanced Micro Devices, Inc. Abrasive-free selective chemo-mechanical polish for tungsten
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer

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JP2011066383A (ja) * 2009-09-18 2011-03-31 Choko Kaihatsu Kagi Kofun Yugenkoshi シリコン貫通ビア構造を有する半導体ウェハーの研磨方法、及びそれに使用する研磨組成物
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JP2017108118A (ja) * 2015-12-03 2017-06-15 ファン トリライアント ＳｉＣウェハのＣＭＰ材料除去レートを向上させるためのシリコンカーバイドエッチング液としての岩塩型塩
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BR9809311A (pt) 2000-07-04
CA2287404A1 (en) 1998-11-05
CN1254441A (zh) 2000-05-24
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AU7170698A (en) 1998-11-24
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KR20010020384A (ko) 2001-03-15
WO1998049723A1 (en) 1998-11-05

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