KR100571449B1 - 화학 기계적 평탄화용 연마 패드 - Google Patents
화학 기계적 평탄화용 연마 패드 Download PDFInfo
- Publication number
- KR100571449B1 KR100571449B1 KR1020027015966A KR20027015966A KR100571449B1 KR 100571449 B1 KR100571449 B1 KR 100571449B1 KR 1020027015966 A KR1020027015966 A KR 1020027015966A KR 20027015966 A KR20027015966 A KR 20027015966A KR 100571449 B1 KR100571449 B1 KR 100571449B1
- Authority
- KR
- South Korea
- Prior art keywords
- pad
- polishing
- delete delete
- storage modulus
- kel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 101
- 239000000126 substance Substances 0.000 title description 7
- 238000003860 storage Methods 0.000 claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- 239000002243 precursor Substances 0.000 claims abstract description 4
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- 238000007517 polishing process Methods 0.000 abstract description 4
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- 235000012431 wafers Nutrition 0.000 description 29
- 239000000203 mixture Substances 0.000 description 20
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 11
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- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 10
- 238000000465 moulding Methods 0.000 description 10
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- IERHLVCPSMICTF-XVFCMESISA-N CMP group Chemical group P(=O)(O)(O)OC[C@@H]1[C@H]([C@H]([C@@H](O1)N1C(=O)N=C(N)C=C1)O)O IERHLVCPSMICTF-XVFCMESISA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000007906 compression Methods 0.000 description 7
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- 238000007654 immersion Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229920001169 thermoplastic Polymers 0.000 description 4
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 241000612182 Rexea solandri Species 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 125000004427 diamine group Chemical group 0.000 description 1
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- 238000011326 mechanical measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
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- 239000007800 oxidant agent Substances 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- 230000008961 swelling Effects 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical group CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000003190 viscoelastic substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20793800P | 2000-05-27 | 2000-05-27 | |
| US60/207,938 | 2000-05-27 | ||
| US22209900P | 2000-07-28 | 2000-07-28 | |
| US60/222,099 | 2000-07-28 | ||
| PCT/US2001/016869 WO2001091971A1 (en) | 2000-05-27 | 2001-05-24 | Polishing pads for chemical mechanical planarization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20030004421A KR20030004421A (ko) | 2003-01-14 |
| KR100571449B1 true KR100571449B1 (ko) | 2006-04-17 |
Family
ID=26902748
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027015966A Ceased KR100571449B1 (ko) | 2000-05-27 | 2001-05-24 | 화학 기계적 평탄화용 연마 패드 |
| KR1020027016049A Ceased KR100770852B1 (ko) | 2000-05-27 | 2001-05-24 | 화학 기계적 평탄화용 그루브형 연마 패드 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027016049A Ceased KR100770852B1 (ko) | 2000-05-27 | 2001-05-24 | 화학 기계적 평탄화용 그루브형 연마 패드 |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP1284842B1 (enExample) |
| JP (12) | JP4959901B2 (enExample) |
| KR (2) | KR100571449B1 (enExample) |
| DE (2) | DE60114183T2 (enExample) |
| TW (2) | TW508284B (enExample) |
| WO (2) | WO2001091972A1 (enExample) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3097658B2 (ja) | 1998-05-21 | 2000-10-10 | 松下電器産業株式会社 | 洗濯機 |
| EP1284842B1 (en) * | 2000-05-27 | 2005-10-19 | Rohm and Haas Electronic Materials CMP Holdings, Inc. | Polishing pads for chemical mechanical planarization |
| US6838149B2 (en) * | 2001-12-13 | 2005-01-04 | 3M Innovative Properties Company | Abrasive article for the deposition and polishing of a conductive material |
| US20050276967A1 (en) * | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
| KR100669301B1 (ko) * | 2002-06-03 | 2007-01-16 | 제이에스알 가부시끼가이샤 | 연마 패드 및 복층형 연마 패드 |
| WO2004059715A1 (en) * | 2002-12-28 | 2004-07-15 | Skc Co., Ltd. | Polishing pads, conditioner and methods for polishing using the same |
| JP3910921B2 (ja) * | 2003-02-06 | 2007-04-25 | 株式会社東芝 | 研磨布および半導体装置の製造方法 |
| US7238097B2 (en) | 2003-04-11 | 2007-07-03 | Nihon Microcoating Co., Ltd. | Polishing pad and method of producing same |
| US7074115B2 (en) | 2003-10-09 | 2006-07-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad |
| SG111222A1 (en) * | 2003-10-09 | 2005-05-30 | Rohm & Haas Elect Mat | Polishing pad |
| JP4606730B2 (ja) * | 2003-12-11 | 2011-01-05 | 東洋ゴム工業株式会社 | 研磨パッドおよびその製造方法 |
| US20050171224A1 (en) * | 2004-02-03 | 2005-08-04 | Kulp Mary J. | Polyurethane polishing pad |
| JP2006114885A (ja) * | 2004-09-17 | 2006-04-27 | Jsr Corp | 化学機械研磨パッド及び化学機械研磨方法 |
| TWI385050B (zh) * | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於ｃｍｐ之特製拋光墊及其製造方法及其用途 |
| JP2006231429A (ja) * | 2005-02-22 | 2006-09-07 | Inoac Corp | 研磨パッドおよびその製造方法 |
| KR20070070094A (ko) | 2005-12-28 | 2007-07-03 | 제이에스알 가부시끼가이샤 | 화학 기계 연마 패드 및 화학 기계 연마 방법 |
| US7789738B2 (en) | 2006-07-03 | 2010-09-07 | San Fang Chemical Industry Co., Ltd. | Sheet for mounting polishing workpiece and method for making the same |
| US7316605B1 (en) | 2006-07-03 | 2008-01-08 | San Fang Chemical Industry Co., Ltd. | Sheet for mounting polishing workpiece and method for making the same |
| EP2123400B1 (en) | 2007-02-01 | 2012-10-10 | Kuraray Co., Ltd. | Polishing pad and process for production of polishing pad |
| JP5415700B2 (ja) * | 2007-02-01 | 2014-02-12 | 株式会社クラレ | 研磨パッド及び研磨パッドの製造方法 |
| JP2008258574A (ja) * | 2007-03-14 | 2008-10-23 | Jsr Corp | 化学機械研磨パッドおよび化学機械研磨方法 |
| US8491360B2 (en) * | 2007-10-26 | 2013-07-23 | Innopad, Inc. | Three-dimensional network in CMP pad |
| JP5393434B2 (ja) | 2008-12-26 | 2014-01-22 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
| JP2009148891A (ja) * | 2009-04-02 | 2009-07-09 | Nitta Haas Inc | 研磨パッド |
| WO2011008918A2 (en) * | 2009-07-16 | 2011-01-20 | Cabot Microelectronics Corporation | Grooved cmp polishing pad |
| US8222145B2 (en) * | 2009-09-24 | 2012-07-17 | Dupont Air Products Nanomaterials, Llc | Method and composition for chemical mechanical planarization of a metal-containing substrate |
| JP5426469B2 (ja) | 2010-05-10 | 2014-02-26 | 東洋ゴム工業株式会社 | 研磨パッドおよびガラス基板の製造方法 |
| JPWO2013153880A1 (ja) * | 2012-04-10 | 2015-12-17 | 旭硝子株式会社 | ガラス基板の研磨方法 |
| US9067299B2 (en) | 2012-04-25 | 2015-06-30 | Applied Materials, Inc. | Printed chemical mechanical polishing pad |
| US9597769B2 (en) * | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
| JP6196858B2 (ja) * | 2012-09-24 | 2017-09-13 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP5836992B2 (ja) | 2013-03-19 | 2015-12-24 | 株式会社東芝 | 半導体装置の製造方法 |
| US20140370788A1 (en) * | 2013-06-13 | 2014-12-18 | Cabot Microelectronics Corporation | Low surface roughness polishing pad |
| TWI599447B (zh) | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊 |
| KR102347711B1 (ko) * | 2014-04-03 | 2022-01-06 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법 |
| US9731398B2 (en) | 2014-08-22 | 2017-08-15 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Polyurethane polishing pad |
| JP6513455B2 (ja) * | 2015-04-03 | 2019-05-15 | 富士紡ホールディングス株式会社 | 研磨パッド |
| TWI669360B (zh) * | 2015-04-03 | 2019-08-21 | 日商富士紡控股股份有限公司 | Abrasive pad |
| JP2016196067A (ja) * | 2015-04-03 | 2016-11-24 | 富士紡ホールディングス株式会社 | 研磨パッド |
| JP6600149B2 (ja) * | 2015-04-03 | 2019-10-30 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| US10086494B2 (en) * | 2016-09-13 | 2018-10-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High planarization efficiency chemical mechanical polishing pads and methods of making |
| KR102329099B1 (ko) * | 2017-01-20 | 2021-11-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Cmp 응용들을 위한 얇은 플라스틱 연마 물품 |
| JP6981467B2 (ja) | 2017-03-28 | 2021-12-15 | Ａｇｃ株式会社 | 積層体、印刷物およびその製造方法 |
| JP6968651B2 (ja) * | 2017-10-12 | 2021-11-17 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| JP7349774B2 (ja) * | 2018-03-09 | 2023-09-25 | 富士紡ホールディングス株式会社 | 研磨パッド、研磨パッドの製造方法、被研磨物の表面を研磨する方法、被研磨物の表面を研磨する際のスクラッチを低減する方法 |
| JP7141230B2 (ja) | 2018-03-30 | 2022-09-22 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| JP7141283B2 (ja) * | 2018-09-06 | 2022-09-22 | 富士紡ホールディングス株式会社 | 研磨パッド、研磨パッドの製造方法、及び被研磨物の表面を研磨する方法 |
| CN112512747B (zh) | 2018-09-28 | 2024-04-05 | 富士纺控股株式会社 | 研磨垫及研磨加工物的制造方法 |
| JP7384608B2 (ja) * | 2018-09-28 | 2023-11-21 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨加工物の製造方法 |
| KR102674027B1 (ko) * | 2019-01-29 | 2024-06-12 | 삼성전자주식회사 | 재생 연마패드 |
| KR102345784B1 (ko) * | 2019-07-10 | 2022-01-03 | 에프엔에스테크 주식회사 | 웨이퍼 후면 연마용 고경도 연마패드 |
| WO2021011260A1 (en) * | 2019-07-12 | 2021-01-21 | Cabot Microelectronics Corporation | Polishing pad employing polyamine and cyclohexanedimethanol curatives |
| KR102811921B1 (ko) | 2020-09-30 | 2025-05-22 | 후지보 홀딩스 가부시키가이샤 | 연마 패드 및 연마 가공물의 제조 방법 |
| JP7759179B2 (ja) * | 2020-09-30 | 2025-10-23 | 富士紡ホールディングス株式会社 | 研磨パッド |
| KR102488115B1 (ko) * | 2020-11-06 | 2023-01-12 | 에스케이엔펄스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| CN112480639B (zh) * | 2020-12-09 | 2023-03-24 | 金旸（厦门）新材料科技有限公司 | 一种高效超韧导电pc材料及其制备方法 |
| KR102561824B1 (ko) * | 2021-06-02 | 2023-07-31 | 에스케이엔펄스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
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2001
- 2001-05-24 EP EP01945987A patent/EP1284842B1/en not_active Expired - Lifetime
- 2001-05-24 DE DE60114183T patent/DE60114183T2/de not_active Expired - Lifetime
- 2001-05-24 WO PCT/US2001/016870 patent/WO2001091972A1/en not_active Ceased
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- 2001-05-24 KR KR1020027015966A patent/KR100571449B1/ko not_active Ceased
- 2001-05-24 KR KR1020027016049A patent/KR100770852B1/ko not_active Ceased
- 2001-05-25 TW TW090112648A patent/TW508284B/zh not_active IP Right Cessation
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