TW528646B - Polishing pads for chemical mechanical planarization - Google Patents
Polishing pads for chemical mechanical planarization Download PDFInfo
- Publication number
- TW528646B TW528646B TW090112660A TW90112660A TW528646B TW 528646 B TW528646 B TW 528646B TW 090112660 A TW090112660 A TW 090112660A TW 90112660 A TW90112660 A TW 90112660A TW 528646 B TW528646 B TW 528646B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- pad
- item
- patent application
- wafer
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 98
- 239000000126 substance Substances 0.000 title description 8
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000002243 precursor Substances 0.000 claims abstract description 4
- 230000008859 change Effects 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 230000002829 reductive effect Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 19
- 239000000203 mixture Substances 0.000 description 15
- 229920000642 polymer Polymers 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000007906 compression Methods 0.000 description 7
- 230000006835 compression Effects 0.000 description 7
- 230000000704 physical effect Effects 0.000 description 7
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 229910000019 calcium carbonate Inorganic materials 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000877 morphologic effect Effects 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 239000004721 Polyphenylene oxide Substances 0.000 description 4
- 230000006399 behavior Effects 0.000 description 4
- 230000003750 conditioning effect Effects 0.000 description 4
- 238000004512 die casting Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920000570 polyether Polymers 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 125000005442 diisocyanate group Chemical group 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 125000004427 diamine group Chemical group 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 229940035422 diphenylamine Drugs 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Substances O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000011326 mechanical measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000036963 noncompetitive effect Effects 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 238000010094 polymer processing Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920003226 polyurethane urea Polymers 0.000 description 1
- 230000010411 postconditioning Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000003190 viscoelastic substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20793800P | 2000-05-27 | 2000-05-27 | |
| US22209900P | 2000-07-28 | 2000-07-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW528646B true TW528646B (en) | 2003-04-21 |
Family
ID=26902748
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090112660A TW528646B (en) | 2000-05-27 | 2001-05-25 | Polishing pads for chemical mechanical planarization |
| TW090112648A TW508284B (en) | 2000-05-27 | 2001-05-25 | Grooved polishing pads for chemical mechanical planarization |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090112648A TW508284B (en) | 2000-05-27 | 2001-05-25 | Grooved polishing pads for chemical mechanical planarization |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP1284841B1 (enExample) |
| JP (12) | JP4959901B2 (enExample) |
| KR (2) | KR100770852B1 (enExample) |
| DE (2) | DE60114183T2 (enExample) |
| TW (2) | TW528646B (enExample) |
| WO (2) | WO2001091971A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI457202B (zh) * | 2007-10-26 | 2014-10-21 | Innopad Inc | 化學機械平面化拋光墊及其產生方法 |
| TWI805850B (zh) * | 2018-09-28 | 2023-06-21 | 日商富士紡控股股份有限公司 | 研磨墊及研磨加工物之製造方法 |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3097658B2 (ja) | 1998-05-21 | 2000-10-10 | 松下電器産業株式会社 | 洗濯機 |
| JP4959901B2 (ja) * | 2000-05-27 | 2012-06-27 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 化学機械平坦化用溝付き研磨パッド |
| US6838149B2 (en) * | 2001-12-13 | 2005-01-04 | 3M Innovative Properties Company | Abrasive article for the deposition and polishing of a conductive material |
| US20050276967A1 (en) * | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
| US20040014413A1 (en) * | 2002-06-03 | 2004-01-22 | Jsr Corporation | Polishing pad and multi-layer polishing pad |
| KR100666726B1 (ko) * | 2002-12-28 | 2007-01-09 | 에스케이씨 주식회사 | Cmp 공정용 컨디셔너 및 이들을 이용한 연마 방법 |
| JP3910921B2 (ja) * | 2003-02-06 | 2007-04-25 | 株式会社東芝 | 研磨布および半導体装置の製造方法 |
| US7238097B2 (en) | 2003-04-11 | 2007-07-03 | Nihon Microcoating Co., Ltd. | Polishing pad and method of producing same |
| SG111222A1 (en) * | 2003-10-09 | 2005-05-30 | Rohm & Haas Elect Mat | Polishing pad |
| US7074115B2 (en) | 2003-10-09 | 2006-07-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad |
| JP4606730B2 (ja) * | 2003-12-11 | 2011-01-05 | 東洋ゴム工業株式会社 | 研磨パッドおよびその製造方法 |
| US20050171224A1 (en) * | 2004-02-03 | 2005-08-04 | Kulp Mary J. | Polyurethane polishing pad |
| JP2006114885A (ja) * | 2004-09-17 | 2006-04-27 | Jsr Corp | 化学機械研磨パッド及び化学機械研磨方法 |
| TWI385050B (zh) * | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於ｃｍｐ之特製拋光墊及其製造方法及其用途 |
| JP2006231429A (ja) * | 2005-02-22 | 2006-09-07 | Inoac Corp | 研磨パッドおよびその製造方法 |
| KR20070070094A (ko) | 2005-12-28 | 2007-07-03 | 제이에스알 가부시끼가이샤 | 화학 기계 연마 패드 및 화학 기계 연마 방법 |
| US7789738B2 (en) | 2006-07-03 | 2010-09-07 | San Fang Chemical Industry Co., Ltd. | Sheet for mounting polishing workpiece and method for making the same |
| US7316605B1 (en) | 2006-07-03 | 2008-01-08 | San Fang Chemical Industry Co., Ltd. | Sheet for mounting polishing workpiece and method for making the same |
| KR101146966B1 (ko) | 2007-02-01 | 2012-05-23 | 가부시키가이샤 구라레 | 연마 패드 및 연마 패드의 제조 방법 |
| JP5415700B2 (ja) * | 2007-02-01 | 2014-02-12 | 株式会社クラレ | 研磨パッド及び研磨パッドの製造方法 |
| JP2008258574A (ja) * | 2007-03-14 | 2008-10-23 | Jsr Corp | 化学機械研磨パッドおよび化学機械研磨方法 |
| JP5393434B2 (ja) | 2008-12-26 | 2014-01-22 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
| JP2009148891A (ja) * | 2009-04-02 | 2009-07-09 | Nitta Haas Inc | 研磨パッド |
| CN102498549A (zh) * | 2009-07-16 | 2012-06-13 | 嘉柏微电子材料股份公司 | 沟槽式化学机械抛光抛光垫 |
| US8222145B2 (en) * | 2009-09-24 | 2012-07-17 | Dupont Air Products Nanomaterials, Llc | Method and composition for chemical mechanical planarization of a metal-containing substrate |
| JP5426469B2 (ja) | 2010-05-10 | 2014-02-26 | 東洋ゴム工業株式会社 | 研磨パッドおよびガラス基板の製造方法 |
| CN104093525A (zh) * | 2012-04-10 | 2014-10-08 | 旭硝子株式会社 | 玻璃基板的研磨方法 |
| US9067299B2 (en) | 2012-04-25 | 2015-06-30 | Applied Materials, Inc. | Printed chemical mechanical polishing pad |
| US9597769B2 (en) * | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
| JP6196858B2 (ja) * | 2012-09-24 | 2017-09-13 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP5836992B2 (ja) | 2013-03-19 | 2015-12-24 | 株式会社東芝 | 半導体装置の製造方法 |
| US20140370788A1 (en) * | 2013-06-13 | 2014-12-18 | Cabot Microelectronics Corporation | Low surface roughness polishing pad |
| TWI599447B (zh) | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊 |
| SG11201608219WA (en) * | 2014-04-03 | 2016-10-28 | 3M Innovative Properties Co | Polishing pads and systems and methods of making and using the same |
| US9731398B2 (en) | 2014-08-22 | 2017-08-15 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Polyurethane polishing pad |
| JP6600149B2 (ja) * | 2015-04-03 | 2019-10-30 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| JP2016196067A (ja) * | 2015-04-03 | 2016-11-24 | 富士紡ホールディングス株式会社 | 研磨パッド |
| JP6513455B2 (ja) * | 2015-04-03 | 2019-05-15 | 富士紡ホールディングス株式会社 | 研磨パッド |
| TWI669360B (zh) * | 2015-04-03 | 2019-08-21 | 日商富士紡控股股份有限公司 | Abrasive pad |
| US10086494B2 (en) * | 2016-09-13 | 2018-10-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High planarization efficiency chemical mechanical polishing pads and methods of making |
| TWI757410B (zh) * | 2017-01-20 | 2022-03-11 | 美商應用材料股份有限公司 | 用於cmp應用的薄的塑膠拋光用具 |
| EP3603968B1 (en) | 2017-03-28 | 2023-09-13 | AGC Inc. | Use of a laminate in inkjet printing, printed matter and method for manufacturing same |
| JP6968651B2 (ja) * | 2017-10-12 | 2021-11-17 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| JP7349774B2 (ja) * | 2018-03-09 | 2023-09-25 | 富士紡ホールディングス株式会社 | 研磨パッド、研磨パッドの製造方法、被研磨物の表面を研磨する方法、被研磨物の表面を研磨する際のスクラッチを低減する方法 |
| JP7141230B2 (ja) | 2018-03-30 | 2022-09-22 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
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| TWI457202B (zh) * | 2007-10-26 | 2014-10-21 | Innopad Inc | 化學機械平面化拋光墊及其產生方法 |
| TWI805850B (zh) * | 2018-09-28 | 2023-06-21 | 日商富士紡控股股份有限公司 | 研磨墊及研磨加工物之製造方法 |
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