JP6655848B2 - 化学機械平坦化用の研磨パッド - Google Patents
化学機械平坦化用の研磨パッド Download PDFInfo
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- JP6655848B2 JP6655848B2 JP2018104803A JP2018104803A JP6655848B2 JP 6655848 B2 JP6655848 B2 JP 6655848B2 JP 2018104803 A JP2018104803 A JP 2018104803A JP 2018104803 A JP2018104803 A JP 2018104803A JP 6655848 B2 JP6655848 B2 JP 6655848B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
(1)導体及びプラグのような導電性フィーチャのディッシングが最小であり、
(2)ウェハ表面にわたってダイレベルの平坦化度が達成される、及び/又は
(3)スクラッチ及び軽度の点欠陥のような欠陥が最小であり、半導体デバイスの電気的性能に悪影響を及ぼさない。
E″/E′=Tanδ
であり、材料の減衰能力の尺度である。
KEL=tan δ×1012/〔E′×(1+tan δ2)〕
式中、E′はパスカル単位である。
(1)大きいパッドの剛性及びパッドの表面硬度。
(2)大きいエネルギー散逸(高いKEL)。
(3)容易に、かつ一貫して再生することができ、研磨中に顕著に又は悪い方向に変化しない安定なモルホロジー。
(4)グレージングを低減させ、それにより、より低い頻度かつより低い度合いのコンディショニングを可能とし、研磨中の少ないパッドの摩耗及びより長いパッドの寿命を生じさせるパッドの表面。
(5)細孔及び表面ボイドがなく、それにより、使用済みスラリーをトラップし、かつパッドの粗さを増大させるポケットが減少する。これは、ウェハの欠陥の主要源を減少させ、そしてほとんど除去する。及び/又は
(6)パッドの化学的性質は、それを多種多様なウェハの研磨に好適であるように容易に変更することができる。
(1)高いパッドの剛性は、良好な平坦化度を有するウェハを生成する。
(2)パッドの最上層は、低いグレージングを伴って、より容易に、かつ一様にコンディショニングされ、これは、IC1010のような他のパッドと比較して、被研磨ICウェハ上のスクラッチ及びLPD欠陥を減少させる。
(3)延長される過剰研磨時間においてさえも、より少ない最終的なディッシングがパターンウェハ上に見られる。これは、高いKELと高い弾性率との有利な組み合わせに起因する。
(4)標準的なパッドと比較して、パターンウェハ上のより大きな研磨窓。
(5)パターンウェハ上で観測されるフィーチャに特異的なディッシングがない。及び/又は、
(6)パッドの剛性は、20℃〜100℃の通常の研磨温度範囲でごくわずかに変化し、非常に安定で均一な研磨を与える。
(1)金属CMPのためのパッドは、一般に、パッドの組成を変えることにより、次のもの:剛性(弾性率及び厚さ)、エネルギー損失因子(KEL)、弾性率温度比、硬度、及び表面粗さ、のうち1つ以上の最適化された組み合わせを有し、これらはある程度独立して制御することができる。
(2)低い弾性回復を有するパッドは、一般に、金属CMP研磨中にフィーチャの少ないディッシングを生じさせる。
(3)低い弾性回復は、「エネルギー損失因子」(KEL)を用いて規定することができる。
(4)これらのパラメータに対する範囲を以下に示す。
本発明のパッドは、キャスティング、成形、押出、フォトイメージング、プリンティング、焼結、コーティングのような代表的なパッド製造技術により作製することができる。パッドは、非充填であるか、又は高分子マイクロバルーンのような材料若しくはシリカ、アルミナ及び炭酸カルシウムのような無機フィラーで任意に充填することができる。
作製例1及び2は比較用パッドを表す。
この作製例は、米国特許第5578362号及び同第5900164号に開示されたパッドを参照したものである。
この作製例は、米国特許第6022268号に開示された成形法により作製されたパッド(「パッド2A」)に関する。
作製例3は、作製例1に記載のものと同様のキャスティング法を用いる、本発明による充填及び非充填パッドの作製を例示する。
作製例4は、作製例2に記載したのと同様の成形法を用いて本発明のパッドを作製することを例示する。表3は、成形法により作製された代表的なパッドの組成及び重要な物理的性質を示している。成形条件は、作製例2に記載したとおりである。
作製例5は、押出法を用いて熱可塑性ポリマーから本発明のパッドを作成することを例示する。Haakeミキサーを用いて、ポリエーテルタイプの熱可塑性ポリウレタンを20重量%の4μ又は10μの炭酸カルシウムフィラーとブレンドした。American Leistritzにより製造された二軸スクリュー押出機を用いて、得られたブレンドを非充填ポリマーと共に50ミルのシートに押出した。上記のポリエーテルベースのTPUをより柔軟なポリエステルベースのTPUと共にブレンドすることにより、追加の配合物を調製した。これらを炭酸カルシウムで再び充填した。シートの重要な物理的性質を測定し、表5に示す。
Claims (1)
- 表面を平坦化するための研磨層が、度数10ラジアン/秒で動的機械分析法を用いて測定したとき、
30℃における貯蔵弾性率E′の値を90℃における貯蔵弾性率E′の値で割ることにより得られる比が1〜4.6であり、
KELが100〜1000(1/Pa、40℃)であり(ここで、KEL=tanδ×1012/〔E′×(1+(tanδ)2)〕であるが、式中、E′はパスカル単位であり、tanδ=E″/E′であり、E′及びE″は、それぞれ、貯蔵弾性率及び損失弾性率を表す)、
貯蔵弾性率E′が100〜2000(MPa、40℃)であり、
中空弾性高分子マイクロスフェアを含有する、
半導体デバイス又はその前駆体の表面を平坦化するための研磨パッド。
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US20793800P | 2000-05-27 | 2000-05-27 | |
US60/207,938 | 2000-05-27 | ||
US22209900P | 2000-07-28 | 2000-07-28 | |
US60/222,099 | 2000-07-28 |
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JP2018058015A Division JP2018117150A (ja) | 2000-05-27 | 2018-03-26 | 化学機械平坦化用の研磨パッド |
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JP2001587969A Expired - Lifetime JP4959901B2 (ja) | 2000-05-27 | 2001-05-24 | 化学機械平坦化用溝付き研磨パッド |
JP2001587968A Expired - Lifetime JP4615813B2 (ja) | 2000-05-27 | 2001-05-24 | 化学機械平坦化用の研磨パッド |
JP2008245811A Expired - Lifetime JP5016576B2 (ja) | 2000-05-27 | 2008-09-25 | 化学機械平坦化用の研磨パッド |
JP2011199659A Expired - Lifetime JP5584666B2 (ja) | 2000-05-27 | 2011-09-13 | 化学機械平坦化用溝付き研磨パッド |
JP2012020977A Expired - Lifetime JP5544381B2 (ja) | 2000-05-27 | 2012-02-02 | 化学機械平坦化用の研磨パッド |
JP2013156497A Expired - Lifetime JP5767280B2 (ja) | 2000-05-27 | 2013-07-29 | 化学機械平坦化用溝付き研磨パッド |
JP2013235414A Expired - Lifetime JP5993360B2 (ja) | 2000-05-27 | 2013-11-13 | 化学機械平坦化用の研磨パッド |
JP2014264802A Pending JP2015092610A (ja) | 2000-05-27 | 2014-12-26 | 化学機械平坦化用溝付き研磨パッド |
JP2015121009A Expired - Lifetime JP6141359B2 (ja) | 2000-05-27 | 2015-06-16 | 化学機械平坦化用の研磨パッド |
JP2016217133A Expired - Lifetime JP6375352B2 (ja) | 2000-05-27 | 2016-11-07 | 化学機械平坦化用の研磨パッド |
JP2018058015A Pending JP2018117150A (ja) | 2000-05-27 | 2018-03-26 | 化学機械平坦化用の研磨パッド |
JP2018104803A Expired - Lifetime JP6655848B2 (ja) | 2000-05-27 | 2018-05-31 | 化学機械平坦化用の研磨パッド |
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JP2001587968A Expired - Lifetime JP4615813B2 (ja) | 2000-05-27 | 2001-05-24 | 化学機械平坦化用の研磨パッド |
JP2008245811A Expired - Lifetime JP5016576B2 (ja) | 2000-05-27 | 2008-09-25 | 化学機械平坦化用の研磨パッド |
JP2011199659A Expired - Lifetime JP5584666B2 (ja) | 2000-05-27 | 2011-09-13 | 化学機械平坦化用溝付き研磨パッド |
JP2012020977A Expired - Lifetime JP5544381B2 (ja) | 2000-05-27 | 2012-02-02 | 化学機械平坦化用の研磨パッド |
JP2013156497A Expired - Lifetime JP5767280B2 (ja) | 2000-05-27 | 2013-07-29 | 化学機械平坦化用溝付き研磨パッド |
JP2013235414A Expired - Lifetime JP5993360B2 (ja) | 2000-05-27 | 2013-11-13 | 化学機械平坦化用の研磨パッド |
JP2014264802A Pending JP2015092610A (ja) | 2000-05-27 | 2014-12-26 | 化学機械平坦化用溝付き研磨パッド |
JP2015121009A Expired - Lifetime JP6141359B2 (ja) | 2000-05-27 | 2015-06-16 | 化学機械平坦化用の研磨パッド |
JP2016217133A Expired - Lifetime JP6375352B2 (ja) | 2000-05-27 | 2016-11-07 | 化学機械平坦化用の研磨パッド |
JP2018058015A Pending JP2018117150A (ja) | 2000-05-27 | 2018-03-26 | 化学機械平坦化用の研磨パッド |
Country Status (6)
Country | Link |
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EP (2) | EP1284841B1 (ja) |
JP (12) | JP4959901B2 (ja) |
KR (2) | KR100770852B1 (ja) |
DE (2) | DE60109601T2 (ja) |
TW (2) | TW508284B (ja) |
WO (2) | WO2001091971A1 (ja) |
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