KR100563398B1 - 얇은 게이트 산화물 ｍｏｓｆｅｔｓ에서 게이트 유도 드레인 누설(ｇｉｄｌ) 전류의 감소방법 및 디바이스 - Google Patents

얇은 게이트 산화물 ｍｏｓｆｅｔｓ에서 게이트 유도 드레인 누설(ｇｉｄｌ) 전류의 감소방법 및 디바이스 Download PDF

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KR100563398B1
KR100563398B1 KR1020037002699A KR20037002699A KR100563398B1 KR 100563398 B1 KR100563398 B1 KR 100563398B1 KR 1020037002699 A KR1020037002699 A KR 1020037002699A KR 20037002699 A KR20037002699 A KR 20037002699A KR 100563398 B1 KR100563398 B1 KR 100563398B1
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leading edge
oxide layer
gate
layer
region
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KR20030043939A (ko
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몰리찬드라브이.
로버츠세레딕
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마이크론 테크놀로지, 인크
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/683—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being parallel to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
KR1020037002699A 2000-08-25 2001-08-23 얇은 게이트 산화물 ｍｏｓｆｅｔｓ에서 게이트 유도 드레인 누설(ｇｉｄｌ) 전류의 감소방법 및 디바이스 Expired - Lifetime KR100563398B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/648,044 2000-08-25
US09/648,044 US7247919B1 (en) 2000-08-25 2000-08-25 Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxides MOSFETs
PCT/US2001/026342 WO2002019431A2 (en) 2000-08-25 2001-08-23 Method and device to reduce gate-induced drain leakage (gidl) current in thin gate oxide mosfets

Publications (2)

Publication Number Publication Date
KR20030043939A KR20030043939A (ko) 2003-06-02
KR100563398B1 true KR100563398B1 (ko) 2006-03-23

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KR1020037002699A Expired - Lifetime KR100563398B1 (ko) 2000-08-25 2001-08-23 얇은 게이트 산화물 ｍｏｓｆｅｔｓ에서 게이트 유도 드레인 누설(ｇｉｄｌ) 전류의 감소방법 및 디바이스

Country Status (7)

Country Link
US (3) US7247919B1 (https=)
EP (1) EP1312110A2 (https=)
JP (1) JP2004508717A (https=)
KR (1) KR100563398B1 (https=)
AU (1) AU2001286666A1 (https=)
SG (1) SG140464A1 (https=)
WO (1) WO2002019431A2 (https=)

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JP2024506941A (ja) * 2021-02-18 2024-02-15 モリアー インコーポレイテッド ナノバブル発生器

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US6797555B1 (en) * 2003-09-10 2004-09-28 National Semiconductor Corporation Direct implantation of fluorine into the channel region of a PMOS device
US7189292B2 (en) 2003-10-31 2007-03-13 International Business Machines Corporation Self-encapsulated silver alloys for interconnects
US7245548B2 (en) * 2004-07-27 2007-07-17 Micron Technology, Inc. Techniques for reducing leakage current in memory devices
US20060291114A1 (en) * 2005-06-27 2006-12-28 Teo Chee K Electrostatic discharge protection circuit and method
US8154088B1 (en) 2006-09-29 2012-04-10 Cypress Semiconductor Corporation Semiconductor topography and method for reducing gate induced drain leakage (GIDL) in MOS transistors
US20080286932A1 (en) * 2007-05-17 2008-11-20 Dongbu Hitek Co., Ltd. Method of manufacturing semiconductor device
US20090090975A1 (en) * 2007-10-09 2009-04-09 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system employing fluorine doping
KR20120133652A (ko) * 2011-05-31 2012-12-11 삼성전자주식회사 반도체 소자의 제조 방법
CN102420228B (zh) * 2011-06-17 2015-01-07 上海华力微电子有限公司 抑制gidl效应的后栅极工艺半导体器件及其制备方法
US8896035B2 (en) 2012-10-22 2014-11-25 International Business Machines Corporation Field effect transistor having phase transition material incorporated into one or more components for reduced leakage current
KR102065973B1 (ko) 2013-07-12 2020-01-15 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US10734511B2 (en) 2016-03-31 2020-08-04 Intel Corporation High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer
WO2018182570A1 (en) * 2017-03-28 2018-10-04 Intel IP Corporation Assymetric transistor arrangements with smartly spaced drain regions
CN112864223A (zh) 2019-11-28 2021-05-28 联华电子股份有限公司 半导体晶体管及其制作方法

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AU2001286666A1 (en) 2002-03-13
JP2004508717A (ja) 2004-03-18
WO2002019431A2 (en) 2002-03-07
EP1312110A2 (en) 2003-05-21
KR20030043939A (ko) 2003-06-02
US20060263964A1 (en) 2006-11-23
WO2002019431A3 (en) 2002-10-17
US6693012B2 (en) 2004-02-17
US7247919B1 (en) 2007-07-24
US20020050621A1 (en) 2002-05-02
SG140464A1 (en) 2008-03-28

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