KR100562538B1 - 선택적으로 연결된 본체를 구비한 실리콘 산화물 절연체 반도체 - Google Patents

선택적으로 연결된 본체를 구비한 실리콘 산화물 절연체 반도체 Download PDF

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KR100562538B1
KR100562538B1 KR1020007006666A KR20007006666A KR100562538B1 KR 100562538 B1 KR100562538 B1 KR 100562538B1 KR 1020007006666 A KR1020007006666 A KR 1020007006666A KR 20007006666 A KR20007006666 A KR 20007006666A KR 100562538 B1 KR100562538 B1 KR 100562538B1
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region
soi
body region
conductivity type
transition
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Expired - Fee Related
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Korean (ko)
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KR20010024753A (ko
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울레센도날드
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
KR1020007006666A 1997-12-16 1998-12-16 선택적으로 연결된 본체를 구비한 실리콘 산화물 절연체 반도체 Expired - Fee Related KR100562538B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/991,808 1997-12-16
US08/991,808 US6020222A (en) 1997-12-16 1997-12-16 Silicon oxide insulator (SOI) semiconductor having selectively linked body
PCT/US1998/027030 WO1999031731A2 (en) 1997-12-16 1998-12-16 Silicon oxide insulator (soi) semiconductor having selectively linked body

Publications (2)

Publication Number Publication Date
KR20010024753A KR20010024753A (ko) 2001-03-26
KR100562538B1 true KR100562538B1 (ko) 2006-03-22

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KR1020007006666A Expired - Fee Related KR100562538B1 (ko) 1997-12-16 1998-12-16 선택적으로 연결된 본체를 구비한 실리콘 산화물 절연체 반도체

Country Status (6)

Country Link
US (3) US6020222A (https=)
EP (1) EP1040521B1 (https=)
JP (2) JP2002509360A (https=)
KR (1) KR100562538B1 (https=)
DE (1) DE69836981T2 (https=)
WO (1) WO1999031731A2 (https=)

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Publication number Publication date
KR20010024753A (ko) 2001-03-26
DE69836981D1 (de) 2007-03-15
EP1040521B1 (en) 2007-01-24
JP2002509360A (ja) 2002-03-26
US6627952B1 (en) 2003-09-30
EP1040521A2 (en) 2000-10-04
WO1999031731A2 (en) 1999-06-24
DE69836981T2 (de) 2007-11-22
JP2008193101A (ja) 2008-08-21
WO1999031731A3 (en) 1999-09-16
US6020222A (en) 2000-02-01
US5994738A (en) 1999-11-30

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