KR100550293B1 - 네거티브형 감광성 수지 조성물, 네거티브형 감광성드라이 필름 및 패턴 형성 방법 - Google Patents

네거티브형 감광성 수지 조성물, 네거티브형 감광성드라이 필름 및 패턴 형성 방법 Download PDF

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Publication number
KR100550293B1
KR100550293B1 KR1020037005229A KR20037005229A KR100550293B1 KR 100550293 B1 KR100550293 B1 KR 100550293B1 KR 1020037005229 A KR1020037005229 A KR 1020037005229A KR 20037005229 A KR20037005229 A KR 20037005229A KR 100550293 B1 KR100550293 B1 KR 100550293B1
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South Korea
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group
film
negative photosensitive
photosensitive resin
acid
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Korean (ko)
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KR20040004405A (ko
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이마이겐지
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간사이 페인트 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G03F7/346—Imagewise removal by selective transfer, e.g. peeling away using photosensitive materials other than non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020037005229A 2000-10-16 2001-10-15 네거티브형 감광성 수지 조성물, 네거티브형 감광성드라이 필름 및 패턴 형성 방법 Expired - Fee Related KR100550293B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00315647 2000-10-16
JP2000315647A JP2002122987A (ja) 2000-10-16 2000-10-16 ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法
PCT/JP2001/009031 WO2002033487A1 (fr) 2000-10-16 2001-10-15 Composition de resine photosensible negative, film sec photosensible negatif et procede de formation de motifs

Publications (2)

Publication Number Publication Date
KR20040004405A KR20040004405A (ko) 2004-01-13
KR100550293B1 true KR100550293B1 (ko) 2006-02-08

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KR1020037005229A Expired - Fee Related KR100550293B1 (ko) 2000-10-16 2001-10-15 네거티브형 감광성 수지 조성물, 네거티브형 감광성드라이 필름 및 패턴 형성 방법

Country Status (5)

Country Link
US (1) US6913867B2 (https=)
JP (1) JP2002122987A (https=)
KR (1) KR100550293B1 (https=)
TW (1) TWI294992B (https=)
WO (1) WO2002033487A1 (https=)

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JP4519448B2 (ja) * 2002-11-12 2010-08-04 株式会社トクヤマ 光カチオン重合開始剤組成物および光カチオン重合性組成物
KR101239120B1 (ko) * 2004-11-01 2013-03-06 닛산 가가쿠 고교 가부시키 가이샤 술폰산 에스테르를 함유하는 리소그라피용 반사방지막형성 조성물
KR100688708B1 (ko) * 2006-01-23 2007-03-02 삼성전기주식회사 인쇄회로기판의 제조방법
WO2007100078A1 (ja) * 2006-03-03 2007-09-07 Pi R & D Co., Ltd. スクリーン印刷用感光性インク組成物及びそれを用いたポジ型レリーフパターンの形成方法
KR100978401B1 (ko) * 2008-02-26 2010-08-26 한국과학기술연구원 다중 적층 염료 감응 태양전지 및 제조방법
JP2010085988A (ja) * 2008-09-05 2010-04-15 Sumitomo Chemical Co Ltd レジスト処理方法
US8168691B2 (en) * 2009-02-09 2012-05-01 International Business Machines Corporation Vinyl ether resist formulations for imprint lithography and processes of use
US8168109B2 (en) * 2009-08-21 2012-05-01 International Business Machines Corporation Stabilizers for vinyl ether resist formulations for imprint lithography
JP5381508B2 (ja) * 2009-08-27 2014-01-08 Ｊｓｒ株式会社 ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP2012058728A (ja) * 2010-08-10 2012-03-22 Sumitomo Chemical Co Ltd 感光性樹脂組成物
JP5672906B2 (ja) * 2010-09-28 2015-02-18 ソニー株式会社 レジスト組成物及び半導体装置の製造方法
JP6047885B2 (ja) * 2011-03-08 2016-12-21 住友化学株式会社 着色感光性樹脂組成物
JP5838101B2 (ja) 2012-02-06 2015-12-24 富士フイルム株式会社 パターン形成方法、及びこれらを用いた電子デバイスの製造方法
KR102021745B1 (ko) * 2012-04-27 2019-09-17 에이지씨 가부시키가이샤 부분 가수 분해 축합물, 발잉크제, 네거티브형 감광성 수지 조성물, 경화막, 격벽 및 광학 소자
US8975008B2 (en) 2012-05-24 2015-03-10 Rohm And Haas Electronic Materials Llc Method of removing negative acting photoresists
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6144667B2 (ja) * 2014-12-25 2017-06-07 トヨタ自動車株式会社 摺動部材およびその製造方法

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JP3441246B2 (ja) * 1995-06-07 2003-08-25 富士写真フイルム株式会社 光重合性組成物
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JP3993691B2 (ja) * 1997-09-24 2007-10-17 関西ペイント株式会社 レジストパターン形成方法
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Publication number Publication date
WO2002033487A1 (fr) 2002-04-25
TWI294992B (https=) 2008-03-21
US20020068237A1 (en) 2002-06-06
KR20040004405A (ko) 2004-01-13
JP2002122987A (ja) 2002-04-26
US6913867B2 (en) 2005-07-05

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