JP2002122987A - ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法 - Google Patents

ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法

Info

Publication number
JP2002122987A
JP2002122987A JP2000315647A JP2000315647A JP2002122987A JP 2002122987 A JP2002122987 A JP 2002122987A JP 2000315647 A JP2000315647 A JP 2000315647A JP 2000315647 A JP2000315647 A JP 2000315647A JP 2002122987 A JP2002122987 A JP 2002122987A
Authority
JP
Japan
Prior art keywords
group
negative photosensitive
resin composition
acid
photosensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000315647A
Other languages
English (en)
Japanese (ja)
Inventor
Genji Imai
玄児 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kansai Paint Co Ltd
Original Assignee
Kansai Paint Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kansai Paint Co Ltd filed Critical Kansai Paint Co Ltd
Priority to JP2000315647A priority Critical patent/JP2002122987A/ja
Priority to TW090125418A priority patent/TWI294992B/zh
Priority to KR1020037005229A priority patent/KR100550293B1/ko
Priority to PCT/JP2001/009031 priority patent/WO2002033487A1/ja
Priority to US09/976,279 priority patent/US6913867B2/en
Publication of JP2002122987A publication Critical patent/JP2002122987A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/34Imagewise removal by selective transfer, e.g. peeling away
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/34Imagewise removal by selective transfer, e.g. peeling away
    • G03F7/346Imagewise removal by selective transfer, e.g. peeling away using photosensitive materials other than non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2000315647A 2000-10-16 2000-10-16 ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法 Pending JP2002122987A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000315647A JP2002122987A (ja) 2000-10-16 2000-10-16 ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法
TW090125418A TWI294992B (https=) 2000-10-16 2001-10-15
KR1020037005229A KR100550293B1 (ko) 2000-10-16 2001-10-15 네거티브형 감광성 수지 조성물, 네거티브형 감광성드라이 필름 및 패턴 형성 방법
PCT/JP2001/009031 WO2002033487A1 (fr) 2000-10-16 2001-10-15 Composition de resine photosensible negative, film sec photosensible negatif et procede de formation de motifs
US09/976,279 US6913867B2 (en) 2000-10-16 2001-10-15 Negative photosensitive resin composition, negative photosensitive dry film and method of forming pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000315647A JP2002122987A (ja) 2000-10-16 2000-10-16 ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法

Publications (1)

Publication Number Publication Date
JP2002122987A true JP2002122987A (ja) 2002-04-26

Family

ID=18794716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000315647A Pending JP2002122987A (ja) 2000-10-16 2000-10-16 ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法

Country Status (5)

Country Link
US (1) US6913867B2 (https=)
JP (1) JP2002122987A (https=)
KR (1) KR100550293B1 (https=)
TW (1) TWI294992B (https=)
WO (1) WO2002033487A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004196775A (ja) * 2002-11-12 2004-07-15 Tokuyama Corp 光カチオン重合開始剤組成物および光カチオン重合性組成物
JPWO2006049045A1 (ja) * 2004-11-01 2008-05-29 日産化学工業株式会社 スルホン酸エステルを含有するリソグラフィー用反射防止膜形成組成物
JP2011048200A (ja) * 2009-08-27 2011-03-10 Jsr Corp ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP2012073393A (ja) * 2010-09-28 2012-04-12 Sony Corp レジスト組成物及び半導体装置の製造方法
US9557643B2 (en) 2012-02-06 2017-01-31 Fujifilm Corporation Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device

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KR100688708B1 (ko) * 2006-01-23 2007-03-02 삼성전기주식회사 인쇄회로기판의 제조방법
WO2007100078A1 (ja) * 2006-03-03 2007-09-07 Pi R & D Co., Ltd. スクリーン印刷用感光性インク組成物及びそれを用いたポジ型レリーフパターンの形成方法
KR100978401B1 (ko) * 2008-02-26 2010-08-26 한국과학기술연구원 다중 적층 염료 감응 태양전지 및 제조방법
JP2010085988A (ja) * 2008-09-05 2010-04-15 Sumitomo Chemical Co Ltd レジスト処理方法
US8168691B2 (en) * 2009-02-09 2012-05-01 International Business Machines Corporation Vinyl ether resist formulations for imprint lithography and processes of use
US8168109B2 (en) * 2009-08-21 2012-05-01 International Business Machines Corporation Stabilizers for vinyl ether resist formulations for imprint lithography
JP2012058728A (ja) * 2010-08-10 2012-03-22 Sumitomo Chemical Co Ltd 感光性樹脂組成物
JP6047885B2 (ja) * 2011-03-08 2016-12-21 住友化学株式会社 着色感光性樹脂組成物
KR102021745B1 (ko) * 2012-04-27 2019-09-17 에이지씨 가부시키가이샤 부분 가수 분해 축합물, 발잉크제, 네거티브형 감광성 수지 조성물, 경화막, 격벽 및 광학 소자
US8975008B2 (en) 2012-05-24 2015-03-10 Rohm And Haas Electronic Materials Llc Method of removing negative acting photoresists
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6144667B2 (ja) * 2014-12-25 2017-06-07 トヨタ自動車株式会社 摺動部材およびその製造方法

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US5098806A (en) 1989-09-22 1992-03-24 Board Of Regents, The University Of Texas System Photosensitive elements based on polymeric matrices of diacetylenes and spiropyrans and the use thereof as coatings to prevent document reproduction
JP3441246B2 (ja) * 1995-06-07 2003-08-25 富士写真フイルム株式会社 光重合性組成物
JP3522454B2 (ja) 1995-06-27 2004-04-26 株式会社林原生物化学研究所 ベンゾピラン環縮合化合物
EP0789279B2 (en) * 1996-02-09 2004-12-08 Wako Pure Chemical Industries Ltd Polymer and resist material
US6106999A (en) * 1997-08-12 2000-08-22 Mitsui Chemicals Photosensitizer, visible light curable resin composition using the same, and use of the composition
JP3993691B2 (ja) * 1997-09-24 2007-10-17 関西ペイント株式会社 レジストパターン形成方法
JPH11212252A (ja) * 1997-11-19 1999-08-06 Mitsubishi Paper Mills Ltd 平版印刷版
JP2000035665A (ja) * 1998-05-11 2000-02-02 Kunihiro Ichimura 酸増殖剤及び感光性組成物
JP3810215B2 (ja) * 1998-06-17 2006-08-16 富士写真フイルム株式会社 感光性平版印刷版
JP2000056450A (ja) 1998-08-05 2000-02-25 Kansai Paint Co Ltd ポジ型可視光感光性樹脂組成物及びその用途
JP2000275823A (ja) 1999-03-25 2000-10-06 Mitsubishi Paper Mills Ltd 感光性組成物および感光性平版印刷版材料

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004196775A (ja) * 2002-11-12 2004-07-15 Tokuyama Corp 光カチオン重合開始剤組成物および光カチオン重合性組成物
JPWO2006049045A1 (ja) * 2004-11-01 2008-05-29 日産化学工業株式会社 スルホン酸エステルを含有するリソグラフィー用反射防止膜形成組成物
JP2011048200A (ja) * 2009-08-27 2011-03-10 Jsr Corp ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP2012073393A (ja) * 2010-09-28 2012-04-12 Sony Corp レジスト組成物及び半導体装置の製造方法
US9557643B2 (en) 2012-02-06 2017-01-31 Fujifilm Corporation Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device
TWI600972B (zh) * 2012-02-06 2017-10-01 富士軟片股份有限公司 圖案形成方法、感光化射線性或感放射線性樹脂組成物及抗蝕劑膜、以及使用它們的電子元件的製造方法及電子元件

Also Published As

Publication number Publication date
WO2002033487A1 (fr) 2002-04-25
TWI294992B (https=) 2008-03-21
US20020068237A1 (en) 2002-06-06
KR100550293B1 (ko) 2006-02-08
KR20040004405A (ko) 2004-01-13
US6913867B2 (en) 2005-07-05

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