WO2014084269A1 - 新規スルホン酸誘導体化合物、光酸発生剤、カチオン重合開始剤、レジスト組成物およびカチオン重合性組成物 - Google Patents
新規スルホン酸誘導体化合物、光酸発生剤、カチオン重合開始剤、レジスト組成物およびカチオン重合性組成物 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D221/00—Heterocyclic compounds containing six-membered rings having one nitrogen atom as the only ring hetero atom, not provided for by groups C07D211/00 - C07D219/00
- C07D221/02—Heterocyclic compounds containing six-membered rings having one nitrogen atom as the only ring hetero atom, not provided for by groups C07D211/00 - C07D219/00 condensed with carbocyclic rings or ring systems
- C07D221/04—Ortho- or peri-condensed ring systems
- C07D221/06—Ring systems of three rings
- C07D221/14—Aza-phenalenes, e.g. 1,8-naphthalimide
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
Definitions
- the present invention relates to a novel sulfonic acid derivative compound, and more particularly to a sulfonic acid derivative compound useful as a photoacid generator and a cationic polymerization initiator.
- a sulfonyloxyimide having a naphthalimino group, which is a radiation functional group, is a substance that generates acid when irradiated with energy rays such as light.
- Photoacid generation in resist compositions for photolithography used in the formation of electronic circuits such as semiconductors It is used as a cationic polymerization initiator in a photopolymerizable composition such as an agent, a resin composition for optical modeling, a paint, a coating, an adhesive, and an ink.
- Patent Document 1 discloses a curable composition comprising an acid curable resin and a latent curing agent catalyst represented by the general formula (II).
- R 1 to R 4 which are substituents of the naphthalene skeleton are a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, an alkylthio having 1 to 12 carbon atoms. Group, nitro group or halogen atom.
- Patent Document 1 only discloses hydrogen atoms for R 1 to R 4 , and discloses differences in properties and performance depending on the type of substitution, the number of substitutions, the position of substitution, and the like. There is no suggestion.
- Patent Document 2 discloses a photoresist used in an ultraviolet, electron beam, or X-ray exposure apparatus containing a sulfonyloxyimide represented by the general formula (I) as a sulfonic acid precursor.
- Patent Document 2 discloses naphthalimide, 3-nitronaphthalimide, 4-nitronaphthalimide, 4-chloronaphthalimide, and 4-bromonaphthalimide as naphthalimide.
- Patent Document 3 discloses an actinic ray curable ink composition containing a sulfonic acid generator represented by formula (A-1).
- R 1 and R 2 which are substituents of the naphthalene skeleton are disclosed as alkyl groups, alkoxy groups, carbonyl groups, phenylthio groups, halogen atoms, cyano groups, nitro groups, and hydroxy groups. ing.
- Patent Document 4 discloses a composition for an undercoat for a photoresist, and discloses a sulfonylsulfonylimide having a naphthalimino group as a photoactive compound, and (C 1- C 8 ) alkyl or (C 1 -C 8 ) alkoxy is disclosed.
- a sulfonylsulfonylimide having a naphthalimino group as a photoactive compound
- (C 1- C 8 ) alkyl or (C 1 -C 8 ) alkoxy is disclosed.
- a light source for a photoacid generator used for a photoresist or a resin composition for optical modeling an adhesive, an ink, a cationic polymerization initiator used for an EUV (Extreme Ultra-Violet), X-ray, F 2 , ArF, Far ultraviolet rays such as KrF, I-line, H-line, and G-line, electron beam, and radiation are often used.
- EUV Extreme Ultra-Violet
- X-ray F 2 , ArF
- Far ultraviolet rays such as KrF, I-line, H-line, and G-line
- electron beam, and radiation are often used.
- the photoresist or the cationic polymerization system contains a sufficient amount of acid generator or an acid generator with a good acid generation rate. It is desirable to use Accordingly, there is a demand for an acid generator having high solubility in an organic solvent and a sufficient acid generation rate.
- an object of the present invention is to provide a compound having a large absorption with respect to light having a wavelength of 365 nm and having a good acid generation rate, a photoacid generator, a cationic polymerization initiator, a resist composition, and a cationic polymerizable composition using the compound. There is to do.
- the sulfonic acid derivative compound of the present invention is represented by the following general formula (I).
- X represents a linear or branched alkyl group having 1 to 14 carbon atoms
- R represents an aliphatic hydrocarbon group having 1 to 18 carbon atoms, an aryl group having 6 to 20 carbon atoms, carbon An arylalkyl group having 7 to 20 carbon atoms, an aryl group having 7 to 20 carbon atoms substituted with an acyl group, an alicyclic hydrocarbon group having 3 to 12 carbon atoms, a 10-camphoryl group, or the following general formula (II):
- the aliphatic hydrocarbon group, aryl group, arylalkyl group, and alicyclic hydrocarbon group have no substituent, are a halogen atom, or a halogenated alkyl group having 1 to 4 carbon atoms.
- Y 1 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms
- R 1 and R 2 each independently represents an alkanediyl group having 2 to 6 carbon atoms
- R 3 represents a linear or branched alkyl group having 1 to 18 carbon atoms, 1 to 18 halogenated linear or branched alkyl group, 3 to 12 alicyclic hydrocarbon group, 6 to 20 aryl group, 6 to 20 halogenated aryl group, 7 carbon atom
- the sulfonic acid derivative compound of the present invention is preferably one in which X in the general formula (I) is an alkyl group having 4 carbon atoms.
- the sulfonic acid derivative compound of the present invention is preferably one in which R in the general formula (I) is a perfluoroalkyl group having 1 to 8 carbon atoms.
- the photoacid generator of the present invention is characterized by comprising any of the above sulfonic acid derivative compounds.
- the cationic polymerization initiator of the present invention is characterized by comprising any of the above sulfonic acid derivative compounds.
- the resist composition of the present invention is characterized by containing the above-mentioned photoacid generator.
- the cationically polymerizable composition of the present invention is characterized by containing the above cationic polymerization initiator.
- the present invention it is possible to provide a compound having a large absorption with respect to light having a wavelength of 365 nm and having a good acid generation rate, a photoacid generator and a cationic polymerization initiator using the compound.
- the structural feature of the compound of the present invention is that it has a linear or branched alkyl group having 1 to 14 carbon atoms at a specific position of the naphthalimide skeleton of the photosensitive group (the 4-position of the naphthalene structure).
- This structure increases absorption at 365 nm (molar extinction coefficient, ⁇ ), imparts a good acid generation rate, and improves solubility in organic solvents. Such an effect cannot be obtained when X is a hydrogen atom.
- the carbon number of X exceeds 14
- the molecular weight increases even if the solubility is improved, and a sufficient acid generation rate cannot be maintained with respect to the amount used. It has also been found that when the alkyl group is present at the 3-position of the naphthalene structure, it does not exhibit sufficient light absorption at 365 nm.
- X is methyl, ethyl, propyl, isopropyl, 1-butyl, 2-butyl, isobutyl, tertiary butyl, 1-pentyl, isopentyl, tertiary pentyl, neopentyl, 1-hexyl, 2-hexyl, 3-hexyl, Heptyl, 2-heptyl, 3-heptyl, isoheptyl, tertiary heptyl, 1-octyl, isooctyl, tertiary octyl, 2-ethylhexyl, 1-nonyl, isononyl, 1-decyl, 1-undecyl, 1-dodecyl, 1- Examples include tridecyl and 1-tetradecyl.
- an alkyl group having 3 to 8 carbon atoms is preferable, and an alkyl group having 4 carbon atoms is more preferable.
- a 1-butyl group is more preferable because the raw material is inexpensive and the yield is good and the production cost is low. Moreover, it is preferable that it is an unsubstituted alkyl group.
- R is an aliphatic hydrocarbon group having 1 to 18 carbon atoms, an aryl group having 6 to 20 carbon atoms, an arylalkyl group having 7 to 20 carbon atoms, or a carbon number 7 substituted with an acyl group.
- the aliphatic hydrocarbon group, aryl group, and arylalkyl group do not need to have a substituent, and are a halogen atom, a halogenated alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 18 carbon atoms. And a group selected from alkylthio groups having 1 to 18 carbon atoms.
- the halogen atom as the substituent include chlorine, bromine, iodine, and fluorine.
- the halogenated alkyl group include a trifluoromethyl group.
- alkoxy group having 1 to 18 carbon atoms examples include methoxy, ethoxy, propoxy, butoxy, tertiary butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy, nonyloxy, decyloxy, undecyloxy, dodecyloxy, tridecyloxy, Examples include tetradecyloxy, pentadecyloxy, hexadecyloxy, heptadecyloxy, octadecyloxy and the like.
- alkylthio group having 1 to 18 carbon atoms examples include methylthio, ethylthio, propylthio, isopropylthio, butylthio, secondary butylthio, tertiary butylthio, isobutylthio, amylthio, isoamylthio, tertiary amylthio, hexylthio, heptylthio, isoheptylthio, tertiary Examples include heptylthio, octylthio, isooctylthio, tertiary octylthio, 2-ethylhexylthio, nonylthio, decylthio, undecylthio, dodecylthio, tridecylthio, tetradecylthio, pentadecylthio, hexadecylthio, methyl
- Examples of the aliphatic hydrocarbon group having 1 to 18 carbon atoms that R can take include an alkenyl group, an alkyl group, a group in which a methylene group in the alkyl group is substituted with an alicyclic hydrocarbon group, and a methylene group in the alkyl group. And a group in which an alicyclic hydrocarbon is present at the terminal of an alkyl group.
- alkenyl group examples include allyl and 2-methyl-2-propenyl
- examples of the alkyl group include methyl, ethyl, propyl, isopropyl, butyl, secondary butyl, tertiary butyl, isobutyl, amyl, isoamyl, tertiary Amyl, hexyl, 2-hexyl, 3-hexyl, heptyl, 2-heptyl, 3-heptyl, isoheptyl, tertiary heptyl, octyl, isooctyl, tertiary octyl, 2-ethylhexyl, nonyl, isononyl, decyl, dodecyl, tridecyl, Examples include tetradecyl, pentadecyl, hexadecyl, heptadecyl, and octadecyl
- Examples of the aliphatic hydrocarbon group having 1 to 18 carbon atoms substituted with the halogen atom include trifluoromethyl, pentafluoroethyl, 2-chloroethyl, 2-bromoethyl, heptafluoropropyl, 3-bromopropyl, and nona.
- Examples of the aliphatic hydrocarbon having 1 to 18 carbon atoms substituted with an alkylthio group include 2-methylthioethyl, 4-methylthiobutyl, 4-butylthioethyl, etc., and a halogen atom and an alkylthio group having 1 to 18 carbon atoms.
- aryl group having 6 to 20 carbon atoms examples include phenyl, naphthyl, 2-methylphenyl, 3-methylphenyl, 4-methylphenyl, 4-vinylphenyl, 3-isopropylphenyl, 4-isopropylphenyl, 4- Butylphenyl, 4-isobutylphenyl, 4-tert-butylphenyl, 4-hexylphenyl, 4-cyclohexylphenyl, 4-octylphenyl, 4- (2-ethylhexyl) phenyl, 2,3-dimethylphenyl, 2,4- Dimethylphenyl, 2,5-dimethylphenyl, 2,6-dimethylphenyl, 3,4-dimethylphenyl, 3,5-dimethylphenyl, 2,4-ditertiarybutylphenyl, 2,5-ditertiarybutylphenyl 2,6-di-tert-butylphenyl, 2,4-
- Examples of the aryl group having 6 to 20 carbon atoms substituted with the halogen atom include pentafluorophenyl, chlorophenyl, dichlorophenyl, trichlorophenyl, 2,4-bis (trifluoromethyl) phenyl, bromoethylphenyl and the like.
- Examples of the aryl group having 6 to 20 carbon atoms substituted with an alkylthio group having 1 to 18 carbon atoms include 4-methylthiophenyl, 4-butylthiophenyl, 4-octylthiophenyl, and 4-dodecylthiophenyl.
- Examples of the aryl group having 6 to 20 carbon atoms substituted with a halogen atom and an alkylthio group having 1 to 18 carbon atoms include 1,2,5,6-tetrafluoro-4-methylthiophenyl, 1,2,5,6- Examples include tetrafluoro-4-butylthiophenyl, 1,2,5,6-tetrafluoro-4-dodecylthiophenyl, and the like.
- arylalkyl group having 7 to 20 carbon atoms examples include benzyl, phenethyl, 2-phenylpropan-2-yl, diphenylmethyl, triphenylmethyl, styryl, cinnamyl and the like.
- Examples of the arylalkyl group substituted with the halogen atom include pentafluorophenylmethyl, phenyldifluoromethyl, 2-phenyl-tetrafluoroethyl, 2- (pentafluorophenyl) ethyl and the like.
- Examples of the arylalkyl group having 7 to 20 carbon atoms substituted by the alkylthio group having 1 to 18 carbon atoms include p-methylthiobenzyl.
- Examples of the arylalkyl group substituted with a halogen atom and an alkylthio group having 1 to 18 carbon atoms include 2,3,5,6-tetrafluoro-4-methylthiophenylethyl.
- the carbon number of the aryl group having 7 to 20 carbon atoms substituted with the above acyl group includes an acyl group.
- Examples thereof include acetylphenyl, acetylnaphthyl, benzoylphenyl, 1-anthraquinolyl, and 2-anthraquinolyl.
- Examples of the alicyclic hydrocarbon group include cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclodecane, bicyclo [2.1.1] hexane, and bicyclo. Examples include [2.2.1] heptane, bicyclo [3.2.1] octane, bicyclo [2.2.2] octane, and adamantane.
- the general formula (II) is an ether group.
- the alkanediyl group having 1 to 4 carbon atoms represented by Y is methylene, ethylene, propane-1,3-diyl, propane-1,2-diyl, butylene, butane-1, Examples include 3-diyl, butane-2,3-diyl, butane-1,2-diyl.
- alkanediyl group having 2 to 6 carbon atoms represented by R 1 and R 2 examples include ethylene, propane-1,3-diyl, propane-1,2-diyl, butylene, butane-1,3-diyl, butane -2,3-diyl, butane-1,2-diyl, pentane-1,5-diyl, pentane-1,3-diyl, pentane-1,4-diyl, pentane-2,3-diyl, hexane-1 , 6-diyl, hexane-1,2-diyl, hexane-1,3-diyl, hexane-1,4-diyl, hexane-2,5-diyl, hexane-2,4-diyl, hexane-3,4 -Diyl and the like.
- the halogenated alkanediyl group having 2 to 6 carbon atoms is a group in which at least one proton in the above alkanediyl group having 1 to 6 carbon atoms is substituted with a halogen atom.
- the halogen atom include chlorine, bromine, iodine, and fluorine.
- tetrafluoroethylene, 1,1-difluoroethylene, 1-fluoroethylene, 1,2-difluoroethylene, hexafluoropropane 1,3-diyl, 1,1,2,2-tetrafluoropropane-1,3- Diyl, 1,1,2,2-tetrafluoropentane-1,5-diyl and the like can be mentioned.
- the arylene group having 6 to 20 carbon atoms represented by R 1 and R 2 is 1,2-phenylene, 1,3-phenylene, 1,4-phenylene, 2,5-dimethyl. -1,4-phenylene, 4,4′-biphenylene, diphenylmethane-4,4′-diyl, 2,2-diphenylpropane-4,4′-diyl, naphthalene-1,2-diyl, naphthalene-1,3 -Diyl, naphthalene-1,4-diyl, naphthalene-1,5-diyl, naphthalene-1,6-diyl, naphthalene-1,7-diyl, naphthalene-1,8-diyl, naphthalene-2,3-diyl , Naphthalene-2,6-diyl, naphthalene-2,7-
- examples of the alkyl group having 1 to 18 carbon atoms represented by R 3 include methyl, ethyl, propyl, isopropyl, butyl, secondary butyl, tertiary butyl, isobutyl, amyl, isoamyl, tertiary Amyl, hexyl, 2-hexyl, 3-hexyl, heptyl, 2-heptyl, 3-heptyl, isoheptyl, tertiary heptyl, octyl, isooctyl, tertiary octyl, 2-ethylhexyl, nonyl, isononyl, decyl, dodecyl, tridecyl, Examples include tetradecyl, pentadecyl, hexadecyl, heptadecyl, and octadecyl.
- the halogenated alkyl group having 1 to 18 carbon atoms is obtained by substituting at least one proton in the above alkyl group having 1 to 18 carbon atoms with a halogen atom. It is.
- the halogen atom include chlorine, bromine, iodine, and fluorine.
- trifluoromethyl pentafluoroethyl, heptafluoropropyl, nonafluorobutyl, tridecafluorohexyl, heptadecafluorooctyl, 2,2,2-trifluoroethyl, 1,1-difluoroethyl, 1,1-difluoro Propyl, 1,1,2,2-tetrafluoropropyl, 3,3,3-trifluoropropyl, 2,2,3,3,3-pentafluoropropyl, 1,1,2,2-tetrafluorotetradecyl And halogenated alkyl groups such as
- the alicyclic hydrocarbon group having 3 to 12 carbon atoms represented by R 3 is exemplified by the names of the cycloalkanes constituting the alicyclic hydrocarbon group.
- Cyclopropane, cyclobutane, cyclopentane, cyclohexane, cyclohexane Examples include heptane, cyclooctane, cyclodecane, bicyclo [2.1.1] hexane, bicyclo [2.2.1] heptane, bicyclo [3.2.1] octane, bicyclo [2.2.2] octane, and adamantane. It is done.
- Examples of the arylalkyl group include the groups exemplified as R above.
- a group preferable as the general formula (II) is a group in which fluorine is bonded to a carbon atom adjacent to the sulfur atom of the group represented by R 1 because the acid generation ability, the cationic polymerization ability and the like are good.
- the total number is 2 to 18 groups.
- Specific examples of the compound of the present invention include, for example, the following compound No. 1-No. 43.
- R in the general formula (I) may be selected so as to release an appropriate organic sulfonic acid according to the application.
- perfluoroalkanesulfonic acid having strong acid strength and giving high sensitivity is most useful.
- R in the compound of the present invention is preferably a perfluoroalkyl group having 1 to 8 carbon atoms.
- the method for producing the sulfonic acid derivative compound of the present invention is not particularly limited, and can be synthesized by applying a known chemical reaction.
- a method of synthesizing bromide as a starting material as follows.
- the sulfonic acid derivative compound of the present invention is an active energy ray such as EUV (Extreme Ultra-Violet), X-ray, F 2 , ArF, KrF, I-ray, H-ray, G-ray, etc. It has the property of releasing a Lewis acid upon irradiation of, and can be decomposed or polymerized by acting on an acid-reactive organic substance. Therefore, the sulfonic acid derivative compound of the present invention is used as a photoacid generator for positive and negative photoresists, or for the production of flat plates, relief printing plates, photoresists for the production of printed boards, ICs and LSIs, and reliefs. It is useful as a wide range of cationic polymerization initiators such as image formation such as images and image duplication, photocurable inks, paints and adhesives.
- the sulfonic acid derivative compound of the present invention is useful for use in a resist composition containing the above acid generator and in a cationic polymerizable composition containing the above cationic polymerization initiator.
- the amount used is not particularly limited, but is preferably 0.00 with respect to 100 parts by mass of the acid-reactive organic substance. It is preferably used in a proportion of 05 to 100 parts by mass, more preferably 0.05 to 20 parts by mass. However, the blending amount can be increased or decreased from the above range depending on factors such as the nature of the acid-reactive organic substance, the light irradiation intensity, the time required for the reaction, the physical properties, and the cost.
- a positive photoresist uses a resin (hereinafter also referred to as “resist base resin”) that changes in a direction in which the solubility in a developer increases due to the cleavage of a chemical bond such as an ester group or an acetal group by the action of an acid.
- a resin hereinafter also referred to as “resist base resin”
- a compound or resin that changes in solubility in a developer due to formation of a chemical bond such as polymerization or cross-linking by the action of an acid is used.
- the resist base resin or compound is selected from polyhydroxystyrene and derivatives thereof; polyacrylic acid and derivatives thereof; polymethacrylic acid and derivatives thereof; and two or more selected from hydroxystyrene, acrylic acid, methacrylic acid and derivatives thereof Two or more copolymers selected from hydroxystyrene, styrene and derivatives thereof; three or more copolymers selected from cycloolefin and derivatives thereof, maleic anhydride, and acrylic acid and derivatives thereof.
- Polymer three or more copolymers selected from cycloolefin and derivatives thereof, maleimide, and acrylic acid and derivatives thereof; polynorbornene; one or more polymer weights selected from the group consisting of metathesis ring-opening polymers Combined; alkali-soluble system in these polymers High molecular weight polymer or the like where the acid labile group having an ability partially replaced the like.
- acid labile groups introduced into the high molecular weight polymer include tertiary alicyclic groups such as tertiary alkyl groups, trialkylsilyl groups, oxoalkyl groups, aryl group-substituted alkyl groups, tetrahydropyran-2-yl groups, and the like.
- acid labile groups introduced into the high molecular weight polymer include tertiary alicyclic groups such as tertiary alkyl groups, trialkylsilyl groups, oxoalkyl groups, aryl group-substituted alkyl groups, tetrahydropyran-2-yl groups, and the like.
- examples include a tertiary alkylcarbonyl group, a tertiary alkylcarbonylalkyl group, and an alkyloxycarbonyl group.
- resist base resins or compounds are disclosed in, for example, claim 3 of JP-A-2003-192665, JP-A-2004-323704, and JP-A-10-10733.
- the polystyrene-reduced weight average molecular weight (Mw) of the resist base resin by gel permeation chromatography (GPC) is usually 1,500 to 300,000, preferably 2,000 to 200,000, and more preferably 3, 000 to 100,000.
- Mw weight average molecular weight
- the Mw of the resist base resin is less than 1,500, the heat resistance as a resist tends to decrease.
- it exceeds 300,000 the developability and applicability as a resist tend to decrease.
- the photoacid generator in the resist composition of the present invention contains the sulfonic acid derivative compound of the present invention as an essential component
- other photoacid generators may be used as optional components.
- the use amount of the photoacid generator is usually 0.01 to 20 parts by mass, preferably 0.5 to 10 parts by mass with respect to 100 parts by mass of the resist base resin, from the viewpoint of ensuring sensitivity and developability as a resist. Part. In this case, if the amount of the photoacid generator used is less than 0.01 parts by mass, the sensitivity and developability may decrease. On the other hand, if it exceeds 20 parts by mass, the transparency to radiation decreases, and the rectangular shape It may be difficult to obtain a resist pattern.
- the sulfonic acid derivative compound of the present invention When used as a photoacid generator, it may be used in combination with another photoacid generator such as an iodonium salt compound or a sulfonium compound.
- the amount used in combination is preferably 10 to 200 parts by mass with respect to 100 parts by mass of the sulfonic acid derivative compound of the present invention.
- various additives may be blended.
- Various additives include colorants such as inorganic fillers, organic fillers, pigments, dyes, various resin additives such as antifoaming agents, thickeners, flame retardants, antioxidants, stabilizers, leveling agents, etc. Can be mentioned.
- the use amount of these various additives is preferably 50% by mass or less in the resist composition of the present invention.
- the resist composition of the present invention is usually dissolved in a solvent so that the total solid content is usually 5 to 50% by weight, preferably 10 to 25% by weight. Adjust by filtering through a degree filter.
- the resist composition of the present invention is prepared by a method of mixing, dissolving or kneading a photoacid generator comprising the sulfonic acid derivative compound of the present invention, another photoacid generator, a resist base resin and other optional components. be able to.
- the resist composition of the present invention is particularly useful as a chemically amplified resist.
- Chemically amplified resists include negative resists that cause a chemical chain reaction by the action of the acid generated from the photoacid generator upon exposure, and are insolubilized in the developer by the cross-linking reaction or polarity change of the base resin.
- positive resists that are solubilized in the developer by the polarity change induced by the side chain deprotection reaction.
- the light source used in the exposure of the photoresist is appropriately selected from visible light, ultraviolet light, far ultraviolet light, X-rays, charged particle beams, etc., depending on the type of photoacid generator used.
- the sulfonic acid derivative compound of the present invention includes various ultraviolet rays such as ArF excimer laser (wavelength 193 nm), KrF excimer laser (wavelength 248 nm), X-rays such as synchrotron radiation, charged particles such as electron beams and EUV. It can be suitably used in a resist using radiation.
- the cationic polymerizable composition is polymerized or crosslinked with a cationic polymerization initiator activated by light irradiation.
- a cationic polymerization initiator activated by light irradiation.
- One type or two or more types of cationically polymerizable compounds for raising are used.
- Typical examples of the cationically polymerizable compound are epoxy compounds, oxetane compounds, cyclic lactone compounds, cyclic acetal compounds, cyclic thioether compounds, spiro orthoester compounds, vinyl compounds, and the like, and one or more of these are used. can do.
- epoxy compounds and oxetane compounds that are easy to obtain and convenient for handling are suitable.
- epoxy compounds are suitable as the epoxy compounds.
- alicyclic epoxy compound examples include cyclohexene oxide obtained by epoxidizing a polyglycidyl ether of polyhydric alcohol having at least one alicyclic ring or a cyclohexene or cyclopentene ring-containing compound with an oxidizing agent.
- a cyclopentene oxide containing compound is mentioned.
- Examples of commercially available products that can be suitably used as the alicyclic epoxy resin include UVR-6100, UVR-6105, UVR-6110, UVR-6128, UVR-6200 (manufactured by Union Carbide), Celoxide 2021, Celoxide 2021P, Celoxide 2081, Celoxide 2083, Celoxide 2085, Celoxide 2000, Celoxide 3000, Cyclomer A200, Cyclomer M100, Cyclomer M101, Epolide GT-301, Epolide GT-302, Epolide 401, Epolide 403, ETHB, Epolide HD300 (above, Daicel Chemical Industries, Ltd.), KRM-2110, KRM-2199 (above, manufactured by ADEKA Corporation), and the like.
- an epoxy resin having a cyclohexene oxide structure is preferable in terms of curability (curing speed).
- aromatic epoxy resin examples include polyhydric phenol having at least one aromatic ring or polyglycidyl ether of an alkylene oxide adduct thereof such as bisphenol A, bisphenol F, or further alkylene oxide. And glycidyl ethers of epoxy compounds and epoxy novolac resins.
- aliphatic epoxy resins include polyglycidyl ethers of aliphatic polyhydric alcohols or alkylene oxide adducts thereof, polyglycidyl esters of aliphatic long-chain polybasic acids, vinyl polymerization of glycidyl acrylate or glycidyl methacrylate. And homopolymers, copolymers synthesized by vinyl polymerization of glycidyl acrylate or glycidyl methacrylate and other vinyl monomers.
- Typical compounds include 1,4-butanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, triglycidyl ether of glycerin, triglycidyl ether of trimethylolpropane, tetraglycidyl ether of sorbitol, dipentaerythritol
- polyglycol glycidyl ethers such as hexaglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, and aliphatic polyhydric alcohols such as propylene glycol, trimethylolpropane and glycerin
- monoglycidyl ethers of higher aliphatic alcohols phenols, cresols, butylphenols, monoglycidyl ethers of polyether alcohols obtained by adding alkylene oxides to these, glycidyl esters of higher fatty acids, epoxidized soybean oil, epoxy Examples include octyl stearate, butyl epoxy stearate, and epoxidized polybutadiene.
- Epolite FR-1500 (above, manufactured by Kyoeisha Chemical Co., Ltd.), Santo Tote ST0000, YD-716, YH-300, PG-202, PG-207, YD-172, YDPN638 (above, manufactured by Tohto Kasei Co., Ltd.) ) And the like.
- oxetane compound examples include the following compounds. 3-ethyl-3-hydroxymethyloxetane, 3- (meth) allyloxymethyl-3-ethyloxetane, (3-ethyl-3-oxetanylmethoxy) methylbenzene, 4-fluoro- [1- (3-ethyl-3 -Oxetanylmethoxy) methyl] benzene, 4-methoxy- [1- (3-ethyl-3-oxetanylmethoxy) methyl] benzene, [1- (3-ethyl-3-oxetanylmethoxy) ethyl] phenyl ether, isobutoxymethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyloxyethyl (3-ethyl-3-oxetanylmethyl) ether, isobornyl (3-ethyl-3-oxetanylmethyl) ether
- oxetane compounds are effective and preferable when used particularly when flexibility is required.
- the other compounds of the cationic polymerizable compound include cyclic lactone compounds such as ⁇ -propiolactone and ⁇ -caprolactone; cyclic compounds such as trioxane, 1,3-dioxolane, and 1,3,6-trioxane cyclooctane.
- the amount used when the sulfonic acid derivative compound of the present invention is used as a cationic polymerization initiator is preferably 0.01 to 10 parts by mass, more preferably 100 parts by mass with respect to 100 parts by mass of the above cationic polymerizable compound. 0.1 parts by mass to 5 parts by mass. If the amount used is less than 0.01 parts by mass, curing may be insufficient. On the other hand, if the amount exceeds 10 parts by mass, an increase in the effect of use is not obtained, and the physical properties of the cured product are adversely affected. May give.
- the sulfonic acid derivative compound of the present invention is used as a cationic polymerizable composition by blending various additives together with the cationic polymerizable compound.
- Various additives include organic solvents; benzotriazole, triazine, and benzoate UV absorbers; phenolic, phosphorus, and sulfur antioxidants; cationic surfactants, anionic surfactants, and nonionic surfactants Antistatic agent comprising surfactant, amphoteric surfactant, etc .; halogen compound, phosphate ester compound, phosphate amide compound, melamine compound, fluororesin or metal oxide, (poly) melamine phosphate, ( Poly) flame retardants such as piperazine phosphate; hydrocarbons, fatty acids, aliphatic alcohols, aliphatic esters, aliphatic amides or metal soaps; colorants such as dyes, pigments, carbon black; fumes Silica, fine particle silica, silica, diatomaceous earth
- Examples include crystallization agents, rubber elasticity imparting agents such as silane coupling agents, flexible polymers, sensitizers, base compounds, photoradical initiators, thermal cation initiators, and crosslinking agents.
- the total use amount of these various additives is 50% by mass or less in the cationically polymerizable composition of the present invention.
- a suitable solvent for example, propylene carbonate, carbitol, carbitol acetate, butyrolactone, propylene glycol-1-monomethyl ether- 2-acetate or the like.
- the above-mentioned cationically polymerizable composition can be cured into a dry-to-touch state or a solvent-insoluble state usually after 0.1 seconds to several minutes by irradiation with energy rays such as ultraviolet rays.
- energy rays such as ultraviolet rays.
- Any suitable energy ray may be used as long as it induces decomposition of the cationic polymerization initiator, but preferably an ultra-high, high, medium, low-pressure mercury lamp, xenon lamp, carbon arc lamp, metal halide lamp, fluorescent lamp, From 2000 angstroms obtained from tungsten lamp, excimer lamp, germicidal lamp, excimer laser, nitrogen laser, argon ion laser, helium cadmium laser, helium neon laser, krypton ion laser, various semiconductor lasers, YAG laser, light emitting diode, CRT light source, etc.
- High energy rays such as electromagnetic energy having a wavelength of 7000 angstroms
- the exposure time to energy rays depends on the strength of the energy rays, the coating thickness and the cationic polymerizable compound, but usually about 0.1 to 10 seconds is sufficient. However, it is preferable to take a longer irradiation time for a relatively thick coating. From 0.1 seconds to several minutes after irradiation with energy rays, most compositions are dry to the touch by cationic polymerization. However, in order to accelerate cationic polymerization, heat energy from heating or a thermal head may be used in combination. preferable.
- Specific applications of the resist composition and cationically polymerizable composition of the present invention include optical filters, paints, coating agents, lining agents, adhesives, printing plates, insulating varnishes, insulating sheets, laminates, printed boards, and semiconductors. Sealant, molding material, putty, glass fiber impregnating agent, sealing agent for equipment, LED package, liquid crystal inlet, organic EL, optical element, electrical insulation, electronic parts, separation membrane, etc.
- Passivation films for semiconductors and solar cells thin film transistors (TFTs), liquid crystal display devices, organic EL display devices, interlayer insulating films used for printed circuit boards, surface protective films, color televisions, PC monitors, portable information terminals , Color filter for CCD image sensor, electrode material for plasma display panel, printing ink, dental composition, resin for stereolithography, liquid and dry film
- TFTs thin film transistors
- electrode material for plasma display panel printing ink
- dental composition resin for stereolithography
- liquid and dry film Both, micro mechanical parts, glass fiber cable coating, holographic recording material, magnetic recording material, optical switch, plating mask, etching mask, stencil for screen printing, touch panel such as transparent conductive film, MEMS element, nanoimprint material, semiconductor package 2D and 3D high-density packaging, etc., decorative sheets, artificial nails, glass substitute optical films, electronic paper, optical disks, microlens arrays used in projectors, lasers for optical communication, etc.
- Prism lens sheet used for backlight lens part of lens sheet such as Fresnel lens sheet used for screen of projection TV, lenticular lens sheet, or backlight using such sheet
- Optical lenses such as micro lenses and imaging lenses, optical elements, optical connectors, optical waveguides, insulating packings, heat-shrinkable rubber tubes, O-rings, sealants for display devices, protective materials, optical fiber protective materials, adhesives , Die bonding agent, high heat dissipation material, high heat-resistant sealing material, solar cell / fuel cell / secondary battery component, solid electrolyte for battery, insulation coating material, photosensitive drum for copying machine, gas separation membrane, concrete protective material / Civil engineering and building materials such as linings, soil injecting agents, sealing agents, heat storage materials, glass coatings, foams, tubes, sealing materials, coating materials, sealing materials for sterilization equipment, contact lenses, oxygen-enriched membranes, biochips It can be used for various uses such as medical materials such as automobile parts, various machine parts, etc., and the use is not particularly
- Example 1 Compound No. 1 Preparation of 4 While stirring a solution of 500 ml of tetrahydrofuran and 74.3 mmol of 1-butyllithium cooled to ⁇ 70 ° C. under a nitrogen atmosphere, a suspension of 750 mmol of zinc bromide and 600 ml of tetrahydrofuran was reacted at ⁇ 55 ° C. It dripped at the speed
- Example 2 Compound No. Production of 5 White crystals 3.00 g were obtained by the same formulation and procedure as in Example 1 except that nonafluorobutanesulfonic anhydride was used instead of trifluoromethanesulfonic anhydride. The obtained crystals were subjected to various analyses. 5 was confirmed. The results of analysis are shown in Tables 1-3.
- Example 3 Compound No. Preparation of 7 Add 13.6 mmol of triethylamine to the mixture of 10 mmol of the hydroxyimide compound obtained in Example 1 above and 22.0 g of chloroform, and maintain 2,4,6-triisopropylbenzenesulfone while keeping the temperature at 2 ° C. or lower. A solution of 12.0 mmol of acid chloride and 7.3 g of chloroform was added dropwise. After stirring at room temperature for 5 hours, 13.0 g of water was added to the reaction solution, and the oil phase obtained by oil-water separation was washed twice with 0.5% aqueous sodium hydroxide solution and once with 3% hydrochloric acid, and then with water. And washed 5 times.
- the solid phase obtained by concentrating the organic phase is dissolved by heating in methanol. After cooling, the precipitated crystals are collected by filtration, dissolved in chloroform by heating, and methanol is added to the filtrate obtained by filtration. Crystallization was performed. The obtained crystals were collected by filtration and dried in vacuo at 45 ° C. to obtain 4.37 g of white crystals. The obtained crystals were subjected to various analyses. 7 was confirmed. The results of analysis are shown in Tables 1-3.
- Example 4 Compound No. Preparation of 10 White crystals 3.00 g were obtained by the same formulation and procedure as in Example 2 except that d-camphorsulfonic acid chloride was used in place of 2,4,6-triisopropylbenzenesulfonic acid chloride. The obtained crystals were subjected to various analyses. 10 was confirmed. The results of analysis are shown in Tables 1-3.
- Example 5 Compound no. Production of 20 By using ethyllithium instead of 1-butyllithium, the same formulation and operation as in Example 1 were carried out to obtain 2.74 g of pale yellow. The obtained crystals were subjected to various analyses. 20 was confirmed. The results of analysis are shown in Tables 1-3.
- Example 6 Compound no. Production of 6 By using paratoluenesulfonic acid chloride in place of 2,4,6-triisopropylbenzenesulfonic acid chloride, 3.56 g of pale yellow was obtained by the same formulation and operation as in Example 3 above. The obtained crystals were subjected to various analyses. 6 was confirmed. The results of analysis are shown in Tables 1-3.
- Example 7 Compound no. Preparation of 35 Using 4-trifluoromethylbenzenesulfonic acid chloride in place of 2,4,6-triisopropylbenzenesulfonic acid chloride, the same formulation and operation as in Example 3 above was carried out to obtain 3.70 g of a white solid. Obtained. The obtained crystals were subjected to various analyses. It was confirmed to be 35. The results of analysis are shown in Tables 1-3.
- Example 8 Compound No. Production of 38 Using 2-ethylhexyllithium instead of 1-butyllithium, 3.05 g of a pale yellow solid was obtained by the same formulation and operation as in Example 1 and Example 3 above. The obtained crystals were subjected to various analyses. 38 was confirmed. The results of analysis are shown in Tables 1-3.
- Example 9 Compound No. Production of 40 By using tetradecyl zinc bromide in place of 1-butyllithium, 2.12 g of a pale yellow solid was obtained by the same formulation and operation as in Examples 1 and 3 above. The obtained crystals were subjected to various analyses. 40 was confirmed. The results of analysis are shown in Tables 1-3.
- Example 10 Preparation and evaluation of negative resist composition Compound No. 10 For 5, antimony hexafluoride salt was synthesized separately. A resin solution was prepared by dissolving 100 g of Nippon Kayaku EPPN-201 in 100 g of methyl ethyl ketone (MEK), and 0.05 g of the antimony hexafluoride salt was dissolved in 8.00 g of the resin solution to prepare a resist solution. . This was coated on an aluminum plate with a # 9 bar coater, dried at 80 ° C. for 10 minutes, and then exposed using an ultrahigh pressure mercury lamp and an irradiation spectrometer. The film was baked at 80 ° C.
- MEK methyl ethyl ketone
- the coating film was rubbed with a cotton swab to which methyl ethyl ketone was attached. As a result, the coating film was not affected even after 200 reciprocations, and it was confirmed that the curing had progressed sufficiently.
- Example 11 Production and Evaluation of Cationic Polymerizable Composition
- Compound No. was mixed with 80 g of 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexylcarboxylate and 20 g of 1,4-butanediol diglycidyl ether. . 4 mmol of 5 was added and stirred well to homogenize.
- This was coated on aluminum coated paper with a # 3 bar coater. This was irradiated with light from an 80 W / cm high-pressure mercury lamp using a light irradiation device with a belt conveyor. The distance from the ramp to the belt conveyor was 10 cm, and the line speed of the belt conveyor was 8 m / min.
- the coating film was rubbed with a cotton swab to which methyl ethyl ketone was attached. As a result, the coating film was not affected even after 200 reciprocations, and it was confirmed that the curing had progressed sufficiently.
- Compound No. No. 10 was not able to be measured by irradiation for 10 seconds with little acid generation.
Abstract
Description
(式(I)中、Xは炭素数1~14の直鎖または分岐鎖アルキル基を表し、Rは、炭素数1~18の脂肪族炭化水素基、炭素数6~20のアリール基、炭素数7~20のアリールアルキル基、アシル基で置換された炭素数7~20のアリール基、炭素数3~12の脂環式炭化水素基、10-カンファーイル基または下記一般式(II)で表される基を表し、当該脂肪族炭化水素基、アリール基、アリールアルキル基、脂環式炭化水素基は、置換基を有しないか、ハロゲン原子、炭素原子数1~4のハロゲン化アルキル基、炭素原子数1~18のアルコキシ基および炭素数1~18のアルキルチオ基から選ばれる基で置換される。)
(式(II)中、Y1は、単結合または炭素数1~4のアルカンジイル基を表し、R1およびR2はそれぞれ独立に、炭素数2~6のアルカンジイル基、炭素数2~6のハロゲン化アルカンジイル基、炭素数6~20のアリーレン基または炭素数6~20のハロゲン化アリーレン基を表し、R3は、炭素数1~18の直鎖または分岐鎖アルキル基、炭素数1~18のハロゲン化直鎖または分岐鎖アルキル基、炭素数3~12の脂環式炭化水素基、炭素数6~20のアリール基、炭素数6~20のハロゲン化アリール基、炭素数7~20のアリールアルキル基または炭素数7~20のハロゲン化アリールアルキル基を表し、a、bは、0又は1を表し、a、bのどちらか一方は1である。)
先ず、上記一般式(I)で表される本発明のスルホン酸誘導体化合物について説明する。
本発明の化合物の構造的な特徴は、感光基のナフタルイミド骨格の特定の位置(ナフタレン構造の4位)に炭素数1~14の直鎖または分岐鎖アルキル基を有することにある。この構造が365nmにおける吸収(モル吸光係数、ε)を大きくし、良好な酸発生率を付与し、有機溶剤への溶解性を向上させる。Xが水素原子であるとこのような効果は得られない。例えば、Xの炭素数が14を超えると溶解性は向上しても分子量が大きくなり、使用量に対して充分な酸発生率を維持できない。また、アルキル基がナフタレン構造の3位の位置に存在すると365nmに充分な光吸収を示さなくなることが分かっている。
炭素数1~18のアルコキシ基としては、メトキシ、エトキシ、プロポキシ、ブトキシ、第3ブトキシ、ペンチルオキシ、ヘキシルオキシ、ヘプチルオキシ、オクチルオキシ、ノニルオキシ、デシルオキシ、ウンデシルオキシ、ドデシルオキシ、トリデシルオキシ、テトラデシルオキシ、ペンタデシルオキシ、ヘキサデシルオキシ、ヘプタデシルオキシ、オクタデシルオキシ等が挙げられる。
炭素数1~18のアルキルチオ基としては、メチルチオ、エチルチオ、プロピルチオ、イソプロピルチオ、ブチルチオ、第2ブチルチオ、第3ブチルチオ、イソブチルチオ、アミルチオ、イソアミルチオ、第3アミルチオ、ヘキシルチオ、ヘプチルチオ、イソヘプチルチオ、第3ヘプチルチオ、オクチルチオ、イソオクチルチオ、第3オクチルチオ、2-エチルヘキシルチオ、ノニルチオ、デシルチオ、ウンデシルチオ、ドデシルチオ、トリデシルチオ、テトラデシルチオ、ペンタデシルチオ、ヘキサデシルチオ、へプタデシルチオ、オクタデシルチオ等が挙げられる。
アルキルチオ基で置換された炭素数1~18の脂肪族炭化水素としては、2-メチルチオエチル、4-メチルチオブチル、4-ブチルチオエチル等が挙げられ、ハロゲン原子及び炭素数1~18のアルキルチオ基で置換された炭素数1~18の脂肪族炭化水素基としては、1,1,2,2-テトラフルオロ-3-メチルチオプロピル等が挙げられる。
炭素数1~18のアルキルチオ基で置換された炭素数6~20のアリール基としては、4-メチルチオフェニル、4-ブチルチオフェニル、4-オクチルチオフェニル、4-ドデシルチオフェニルが挙げられる。ハロゲン原子及び炭素数1~18のアルキルチオ基で置換された炭素数6~20のアリール基としては、1,2,5,6-テトラフルオロ-4-メチルチオフェニル、1,2,5,6-テトラフルオロ-4-ブチルチオフェニル、1,2,5,6-テトラフルオロ-4-ドデシルチオフェニル等が挙げられる。
窒素雰囲気下で、-70℃に冷却したテトラヒドロフラン500ml、1-ブチルリチウム74.3mmolの溶液を撹拌しながら、臭化亜鉛750mmolとテトラヒドロフラン600mlとの懸濁液を反応系が-55℃より上昇しない速度で滴下した。その後反応系を15℃まで戻し、1時間撹拌し、ブチル亜鉛試薬を調製した。
窒素雰囲気下で、4-ブロモナフタル酸無水物300mmol、PdCl2(dppf)2;ビス(ジフェニルホスフィノ)パラジウムジクロライド6.00mmolとテトラヒドロフラン500mlの混合液に、上記のブチル亜鉛試薬を滴下し、室温で1時間撹拌した。これに水1000mlを加えて油水分離して得られ有機相を濃縮して得た固相にトルエン500ml、シリカゲル90.0gを加え、撹拌した後、固相を濾別した。濾液を濃縮して得られた固相にメタノール350mlを加え、加温して得た溶液を濾過して得た濾液を冷却して晶析を行った。得られた結晶を濾取し、イソプロピルアルコールで洗浄後、45℃で真空乾燥させて、淡黄色結晶26.5g(4-ブチルナフタル酸無水物)を得た。
上記で得た4-ブチルナフタル酸無水物20.0mmolをジメチルホルムアミド30gに懸濁させ、室温でNH2OH-HCl24.0mmolを加え、48%水酸化ナトリウム水溶液2.00gを滴下し、3時間撹拌した。これに水20.0g、35%塩酸0.30gを加え、更に1時間撹拌した。析出物を濾取し、メタノールと水の混合物で洗浄した後、45℃で真空乾燥させて、ヒドロキシイミド体5.06gを得た。
上記で得たヒドロキシイミド体10.0mmolとクロロホルム18.9gとの混合物にピリジン15.9mmolを加え、2℃以下の温度を保ちながら、トリフルオロメタンスルホン酸無水物13.2mmolを加え、室温で1時間撹拌した。反応液に水20gを加え、油水分離をして得た油相を0.5%水酸化ナトリウム水溶液で2回、3%塩酸で1回洗浄し、ついで水で5回の洗浄を行った。有機相を濃縮して得られた固相をクロロホルムに加温溶解させ、濾過した得た濾液にメタノールを加えて晶析を行った。得られた結晶を濾取し、45℃で真空乾燥させて、淡黄色結晶を3.06g得た。得られた結晶について、各種分析を行い、化合物No.4であることを確認した。分析の結果を表1~3に示す。
トリフルオロメタンスルホン酸無水物の代わりに、ノナフルオロブタンスルホン酸無水物を用いた以外は、上記実施例1と同様の処方、手順で白色結晶3.00gを得た。得られた結晶について、各種分析を行い、化合物No.5であることを確認した。分析の結果を表1~3に示す。
上実施例1で得たヒドロキシイミド体10mmolとクロロホルム22.0gとの混合液にトリエチルアミン13.6mmolを加え、2℃以下の温度を保ちながら、2,4,6-トリイソプロピルベンゼンスルホン酸クロライド12.0mmolとクロロホルム7.3gとの溶液を滴下した。室温で5時間撹拌後、反応液に水13.0gを加え、油水分離をして得た油相を0.5%水酸化ナトリウム水溶液で2回、3%塩酸で1回洗浄し、ついで水で5回の洗浄を行った。有機相を濃縮して得られた固相をメタノールに加温溶解させ、冷却後析出した結晶を濾取し、これをクロロホルムに加温溶解させ、濾過して得られた濾液にメタノールを加えて晶析を行った。得られた結晶を濾取し、45℃で真空乾燥させて、白色結晶を4.37g得た。得られた結晶について、各種分析を行い、化合物No.7であることを確認した。分析の結果を表1~3に示す。
2,4,6-トリイソプロピルベンゼンスルホン酸クロライドの代わりにd-カンファースルホン酸クロライドを使用した以外は、上記実施例2と同様の処方、手順で白色結晶3.00gを得た。得られた結晶について、各種分析を行い、化合物No.10であることを確認した。分析の結果を表1~3に示す。
1-ブチルリチウムの代わりにエチルリチウムを使用して、上記実施例1と同様の処方、操作により、淡黄色2.74gを得た。得られた結晶について、各種分析を行い、化合物No.20であることを確認した。分析の結果を表1~3に示す。
2,4,6-トリイソプロピルベンゼンスルホン酸クロライドの代わりにパラトルエンスルホン酸クロリドを使用して、上記実施例3と同様の処方、操作により、淡黄色3.56gを得た。得られた結晶について、各種分析を行い、化合物No.6であることを確認した。分析の結果を表1~3に示す。
2,4,6-トリイソプロピルベンゼンスルホン酸クロライドの代わりに4-トリフルオロメチルベンゼンスルホン酸クロリドを使用して、上記実施例3と同様の処方、操作により、白色固体3.70gを得た。得られた結晶について、各種分析を行い、化合物No.35であることを確認した。分析の結果を表1~3に示す。
1-ブチルリチウムの代わりに2-エチルヘキシルリチウムを使用して、上記実施例 1と実施例3と同様の処方、操作により、淡黄色固体3.05gを得た。得られた結晶について、各種分析を行い、化合物No.38であることを確認した。分析の結果を表1~3に示す。
1-ブチルリチウムの代わりにテトラデシル臭化亜鉛を使用して、上記実施例1と実施例3と同様の処方、操作により、淡黄色固体2.12gを得た。得られた結晶について、各種分析を行い、化合物No.40であることを確認した。分析の結果を表1~3に示す。
化合物No.5について六フッ化アンチモン塩を別途合成した。日本化薬製EPPN-201の100gをメチルエチルケトン(MEK)100gに溶解させ樹脂溶液を調製し、上記六フッ化アンチモン塩について、0.05gをこの樹脂溶液8.00gに溶解させレジスト液を調製した。これをアルミ板上に#9のバーコーターで塗布し、80℃で10分乾燥した後、超高圧水銀ランプと照射分光器を用いて露光した。80℃で10分間ベークし、MEKに30秒間浸漬することにより現像し、キシレンで洗浄した。波長405nmの光を照射して硬化させた。
硬化後24時間室温に放置後、メチルエチルケトンを付けた綿棒で塗膜を擦った結果200往復しても塗膜は侵されず、硬化が十分に進行していることが確認された。
3,4-エポキシシクロヘキシルメチル-3,4-エポキシシクロヘキシルカルボキシレート80g及び1,4-ブタンジオールジグリシジルエーテル20gを混合したものに、化合物No.5を4mmol添加し、よく撹拌し均一にした。これをアルミコート紙上に#3のバーコーターで塗布した。これに、ベルトコンベア付き光照射装置を使用して80W/cmの高圧水銀灯の光を照射した。ランプからベルトコンベアまでの距離は10cm、ベルトコンベアのラインスピードは8m/分とした。
硬化後24時間室温に放置後、メチルエチルケトンを付けた綿棒で塗膜を擦った結果200往復しても塗膜は侵されず、硬化が十分に進行していることが確認された。
化合物No.4、No.5、No.7、No.10、No.20、No.6、No.35、No.38、No.40および、下記化学式で表す比較化合物1をアセトニトリルに溶解し、日光光度計U-3010で吸収スペクトルを測定し、300nm~400nmの範囲の吸収における付近のλmaxとε(モル吸光係数)及び365nmにおけるεの値を示した。また、25℃におけるプロピレングリコールモノメチルエーテルアセテートに対する溶解性の評価を行った。溶解性は1%質量結果刻みで濃度を上昇させ、溶け残りの発生しなかった濃度で表した、結果を表4に示す。
化合物No.4、化合物No.7、化合物No.10、化合物No.20、比較化合物1について0.5質量%のアセトニトリル/水の混合溶液(アセトニトリル/水=9/1:容積比)を調製し、内径50mm のシャーレに5.0g入れ、HOYACANDEOOPTRONICS社製UVランプと365nm付近の波長のみを透過するカットフィルターを用いて100mW/cm2のUVを照射した。照射時間はそれぞれについて10秒、30秒、60秒の3点とした。露光後、45gのアセトニトリル/水の混合溶液(アセトニトリル/水=9/1:容積比)で希釈し、平沼社製自動滴定装置(COM-1600)を用いて0.1規定の水酸化カリウム水溶液で滴定を行い、用いた容量より酸濃度を測定し、これから発生率(mol%)を計算した。結果を表5に示す。
Claims (7)
- 下記一般式(I)で表されることを特徴とするスルホン酸誘導体化合物。
(式(I)中、Xは炭素数1~14の直鎖または分岐鎖アルキル基を表し、Rは、炭素数1~18の脂肪族炭化水素基、炭素数6~20のアリール基、炭素数7~20のアリールアルキル基、アシル基で置換された炭素数7~20のアリール基、炭素数3~12の脂環式炭化水素基、10-カンファーイル基または下記一般式(II)で表される基を表し、当該脂肪族炭化水素基、アリール基、アリールアルキル基、脂環式炭化水素基は、置換基を有しないか、ハロゲン原子、炭素原子数1~4のハロゲン化アルキル基、炭素原子数1~18のアルコキシ基および炭素数1~18のアルキルチオ基から選ばれる基で置換される。)
(式(II)中、Y1は、単結合または炭素数1~4のアルカンジイル基を表し、R1およびR2はそれぞれ独立に、炭素数2~6のアルカンジイル基、炭素数2~6のハロゲン化アルカンジイル基、炭素数6~20のアリーレン基または炭素数6~20のハロゲン化アリーレン基を表し、R3は、炭素数1~18の直鎖または分岐鎖アルキル基、炭素数1~18のハロゲン化直鎖または分岐鎖アルキル基、炭素数3~12の脂環式炭化水素基、炭素数6~20のアリール基、炭素数6~20のハロゲン化アリール基、炭素数7~20のアリールアルキル基または炭素数7~20のハロゲン化アリールアルキル基を表し、a、bは、0又は1を表し、a、bのどちらか一方は1である。) - Xが炭素数4のアルキル基である請求項1記載の化合物。
- Rが炭素数1~8のパーフルオロアルキル基である請求項1記載の化合物。
- 請求項1~3のいずれか一項記載の化合物からなることを特徴とする光酸発生剤。
- 請求項1~3のいずれか一項記載の化合物からなることを特徴とするカチオン重合開始剤。
- 請求項4記載の光酸発生剤を含有してなることを特徴とするレジスト組成物。
- 請求項5記載のカチオン重合開始剤を含有してなることを特徴とするカチオン重合性組成物。
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US14/647,683 US20150315153A1 (en) | 2012-11-28 | 2013-11-27 | Novel sulfonic acid derivative compound, photoacid generator, cationic polymerization initiator, resist composition, and cationically polymerizable composition |
CN201380062293.XA CN104822662B (zh) | 2012-11-28 | 2013-11-27 | 新型磺酸衍生物化合物、光产酸剂、阳离子聚合引发剂、抗蚀剂组合物以及阳离子聚合性组合物 |
KR1020157016496A KR102191331B1 (ko) | 2012-11-28 | 2013-11-27 | 신규 술폰산 유도체 화합물, 광산발생제, 양이온 중합 개시제, 레지스트 조성물 및 양이온 중합성 조성물 |
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Cited By (12)
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---|---|---|---|---|
WO2015001804A1 (ja) * | 2013-07-05 | 2015-01-08 | サンアプロ株式会社 | 光酸発生剤及びフォトリソグラフィー用樹脂組成物 |
JP2015152669A (ja) * | 2014-02-12 | 2015-08-24 | サンアプロ株式会社 | 光酸発生剤及びフォトリソグラフィー用樹脂組成物 |
US9383644B2 (en) | 2014-09-18 | 2016-07-05 | Heraeus Precious Metals North America Daychem LLC | Sulfonic acid derivative compounds as photoacid generators in resist applications |
WO2016147357A1 (ja) * | 2015-03-18 | 2016-09-22 | 株式会社Adeka | スルホン酸誘導体化合物、光酸発生剤、レジスト組成物、カチオン重合開始剤、およびカチオン重合性組成物 |
US9477150B2 (en) | 2015-03-13 | 2016-10-25 | Heraeus Precious Metals North America Daychem LLC | Sulfonic acid derivative compounds as photoacid generators in resist applications |
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Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57151651A (en) | 1981-02-13 | 1982-09-18 | Ciba Geigy Ag | Hardenable resin composition |
JPH0519505A (ja) * | 1991-07-16 | 1993-01-29 | Kao Corp | 両極性電子写真感光体 |
JPH0525136A (ja) * | 1991-07-16 | 1993-02-02 | Kao Corp | 新規ナフタレンジカルボン酸イミド化合物 |
JPH08501890A (ja) | 1992-10-29 | 1996-02-27 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 非金属感光性酸生成剤を含む化学的に増幅されたフォトレジスト |
JPH0867827A (ja) * | 1994-06-23 | 1996-03-12 | Ricoh Co Ltd | ナフタルイミド化合物及びそれを含有する電子写真感光体 |
DE19505941A1 (de) * | 1995-02-21 | 1996-08-22 | Bayer Ag | 1,8-Naphthalimid-Derivate, Verfahren zur Herstellung und ihre Verwendung als Zwischenprodukte |
JPH1010733A (ja) | 1996-06-20 | 1998-01-16 | Japan Synthetic Rubber Co Ltd | ネガ型感放射線性樹脂組成物 |
US20020198385A1 (en) * | 1995-06-07 | 2002-12-26 | Microbiomed Corp. | Dimeric non-azo naphthalimides and uses for same |
JP2003192665A (ja) | 2001-09-28 | 2003-07-09 | Shin Etsu Chem Co Ltd | 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法 |
JP2004217748A (ja) | 2003-01-14 | 2004-08-05 | Konica Minolta Holdings Inc | 活性光線硬化型インク組成物、それを用いた画像形成方法及びインクジェット記録装置 |
JP2004323704A (ja) | 2003-04-25 | 2004-11-18 | Daicel Chem Ind Ltd | フォトレジスト用重合体合成用(メタ)アクリル酸エステルとその製造法 |
JP2009516207A (ja) | 2005-11-10 | 2009-04-16 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | 厚いフォトレジスト層のための現像可能なアンダーコート用組成物 |
CN101638388A (zh) * | 2008-07-30 | 2010-02-03 | 住友化学株式会社 | 二酰亚胺类化合物及包含该化合物的化学增幅抗蚀剂组合物 |
WO2011087011A1 (ja) * | 2010-01-13 | 2011-07-21 | 株式会社Adeka | 新規スルホン酸誘導体化合物及び新規ナフタル酸誘導体化合物 |
US20130134426A1 (en) * | 2011-11-30 | 2013-05-30 | Lg Display Co., Ltd. | Composition of organic insulating layer and thin film transistor substrate and display device using the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
KR101148225B1 (ko) * | 2008-09-01 | 2012-05-21 | 세키스이가가쿠 고교가부시키가이샤 | 적층체의 제조 방법 |
FR2935977B1 (fr) * | 2008-09-15 | 2010-12-17 | Centre Nat Rech Scient | Procede d'hydrolyse-polycondensation photochimique de chromophores reticulables a encombrement sterique, catalyse par un acide photogenere et ses applications. |
JP2011206933A (ja) * | 2010-03-29 | 2011-10-20 | Jx Nippon Oil & Energy Corp | 複合容器の製造方法、及び、複合容器 |
-
2013
- 2013-11-27 KR KR1020157016496A patent/KR102191331B1/ko active IP Right Grant
- 2013-11-27 JP JP2014549869A patent/JP6211001B2/ja active Active
- 2013-11-27 WO PCT/JP2013/081939 patent/WO2014084269A1/ja active Application Filing
- 2013-11-27 CN CN201380062293.XA patent/CN104822662B/zh active Active
- 2013-11-27 EP EP13859004.7A patent/EP2927216B1/en active Active
- 2013-11-27 US US14/647,683 patent/US20150315153A1/en not_active Abandoned
- 2013-11-28 TW TW102143549A patent/TWI586652B/zh active
Patent Citations (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57151651A (en) | 1981-02-13 | 1982-09-18 | Ciba Geigy Ag | Hardenable resin composition |
JPH0519505A (ja) * | 1991-07-16 | 1993-01-29 | Kao Corp | 両極性電子写真感光体 |
JPH0525136A (ja) * | 1991-07-16 | 1993-02-02 | Kao Corp | 新規ナフタレンジカルボン酸イミド化合物 |
JPH08501890A (ja) | 1992-10-29 | 1996-02-27 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 非金属感光性酸生成剤を含む化学的に増幅されたフォトレジスト |
JPH0867827A (ja) * | 1994-06-23 | 1996-03-12 | Ricoh Co Ltd | ナフタルイミド化合物及びそれを含有する電子写真感光体 |
DE19505941A1 (de) * | 1995-02-21 | 1996-08-22 | Bayer Ag | 1,8-Naphthalimid-Derivate, Verfahren zur Herstellung und ihre Verwendung als Zwischenprodukte |
EP0728745A1 (de) * | 1995-02-21 | 1996-08-28 | Bayer Ag | 1,8-Naphthalimid-Derivate, Verfahren zur Herstellung und ihre Verwendung als Zwischenprodukte |
JPH08259542A (ja) * | 1995-02-21 | 1996-10-08 | Bayer Ag | 1,8−ナフタルイミド誘導体、それらの製造法及び中間体としてのそれらの利用 |
CN1138036A (zh) * | 1995-02-21 | 1996-12-18 | 拜尔公司 | 1,8-萘二甲酰亚胺衍生物及其制备方法及其作为中间体的用途 |
US20020198385A1 (en) * | 1995-06-07 | 2002-12-26 | Microbiomed Corp. | Dimeric non-azo naphthalimides and uses for same |
JPH1010733A (ja) | 1996-06-20 | 1998-01-16 | Japan Synthetic Rubber Co Ltd | ネガ型感放射線性樹脂組成物 |
JP2003192665A (ja) | 2001-09-28 | 2003-07-09 | Shin Etsu Chem Co Ltd | 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法 |
JP2004217748A (ja) | 2003-01-14 | 2004-08-05 | Konica Minolta Holdings Inc | 活性光線硬化型インク組成物、それを用いた画像形成方法及びインクジェット記録装置 |
JP2004323704A (ja) | 2003-04-25 | 2004-11-18 | Daicel Chem Ind Ltd | フォトレジスト用重合体合成用(メタ)アクリル酸エステルとその製造法 |
JP2009516207A (ja) | 2005-11-10 | 2009-04-16 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | 厚いフォトレジスト層のための現像可能なアンダーコート用組成物 |
CN101638388A (zh) * | 2008-07-30 | 2010-02-03 | 住友化学株式会社 | 二酰亚胺类化合物及包含该化合物的化学增幅抗蚀剂组合物 |
US20100028807A1 (en) * | 2008-07-30 | 2010-02-04 | Sumitomo Chemical Company, Ltd. | Imide Compound and Chemically Amplified Resist Composition Containing The Same |
KR20100013264A (ko) * | 2008-07-30 | 2010-02-09 | 스미또모 가가꾸 가부시키가이샤 | 이미드 화합물 및 이를 포함하는 화학적으로 증폭된 레지스트 조성물 |
JP2010053121A (ja) * | 2008-07-30 | 2010-03-11 | Sumitomo Chemical Co Ltd | 化学増幅型フォトレジスト組成物用の酸発生剤、その製造法及び化学増幅型フォトレジスト組成物 |
WO2011087011A1 (ja) * | 2010-01-13 | 2011-07-21 | 株式会社Adeka | 新規スルホン酸誘導体化合物及び新規ナフタル酸誘導体化合物 |
CN102712599A (zh) * | 2010-01-13 | 2012-10-03 | 株式会社Adeka | 新型磺酸衍生物化合物和新型萘二甲酸衍生物化合物 |
KR20120114353A (ko) * | 2010-01-13 | 2012-10-16 | 가부시키가이샤 아데카 | 신규 설폰산 유도체 화합물 및 신규 나프탈산 유도체 화합물 |
US20120289697A1 (en) * | 2010-01-13 | 2012-11-15 | Toshihiko Murai | Novel sulfonic acid derivative compound and novel naphthalic acid derivative compound |
EP2524914A1 (en) * | 2010-01-13 | 2012-11-21 | Adeka Corporation | Novel sulfonic acid derivative compound and novel naphthalic acid derivative compound |
US20130134426A1 (en) * | 2011-11-30 | 2013-05-30 | Lg Display Co., Ltd. | Composition of organic insulating layer and thin film transistor substrate and display device using the same |
CN103137707A (zh) * | 2011-11-30 | 2013-06-05 | 乐金显示有限公司 | 有机绝缘层组合物及使用其的薄膜晶体管基板和显示装置 |
KR20130060645A (ko) * | 2011-11-30 | 2013-06-10 | 엘지디스플레이 주식회사 | 유기절연막 조성물 및 그를 이용한 박막 트랜지스터 기판 및 디스플레이 장치 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2927216A4 * |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015001804A1 (ja) * | 2013-07-05 | 2015-01-08 | サンアプロ株式会社 | 光酸発生剤及びフォトリソグラフィー用樹脂組成物 |
JPWO2015001804A1 (ja) * | 2013-07-05 | 2017-02-23 | サンアプロ株式会社 | 光酸発生剤及びフォトリソグラフィー用樹脂組成物 |
JP2015152669A (ja) * | 2014-02-12 | 2015-08-24 | サンアプロ株式会社 | 光酸発生剤及びフォトリソグラフィー用樹脂組成物 |
US9383644B2 (en) | 2014-09-18 | 2016-07-05 | Heraeus Precious Metals North America Daychem LLC | Sulfonic acid derivative compounds as photoacid generators in resist applications |
US9709886B2 (en) | 2015-03-13 | 2017-07-18 | Heraeus Precious Metals North America Daychem LLC | Sulfonic acid derivative compounds as photoacid generators in resist applications |
US9477150B2 (en) | 2015-03-13 | 2016-10-25 | Heraeus Precious Metals North America Daychem LLC | Sulfonic acid derivative compounds as photoacid generators in resist applications |
CN107250114A (zh) * | 2015-03-18 | 2017-10-13 | 株式会社Adeka | 磺酸衍生物化合物、光产酸剂、抗蚀剂组合物、阳离子聚合引发剂和阳离子聚合性组合物 |
WO2016147357A1 (ja) * | 2015-03-18 | 2016-09-22 | 株式会社Adeka | スルホン酸誘導体化合物、光酸発生剤、レジスト組成物、カチオン重合開始剤、およびカチオン重合性組成物 |
KR20170125980A (ko) * | 2015-03-18 | 2017-11-15 | 가부시키가이샤 아데카 | 술폰산 유도체 화합물, 광산 발생제, 레지스트 조성물, 양이온 중합 개시제, 및 양이온 중합성 조성물 |
JP2018523640A (ja) * | 2015-08-21 | 2018-08-23 | ヘレウス プレシャス メタルズ ノース アメリカ デイケム エルエルシー | レジスト塗布における光酸発生剤としてのスルホン酸誘導体化合物 |
WO2017034814A1 (en) * | 2015-08-21 | 2017-03-02 | Heraeus Precious Metals North America Daychem LLC | Sulfonic acid derivative compounds as photoacid generators in resist applications |
US10976658B2 (en) | 2015-08-21 | 2021-04-13 | Heraeus Epurio Llc | Sulfonic acid derivative compounds as photoacid generators in resist applications |
EP3182203A1 (en) | 2015-12-18 | 2017-06-21 | Heraeus Precious Metals North America Daychem LLC | A combination of nit derivatives with sensitizers |
WO2017130896A1 (ja) * | 2016-01-26 | 2017-08-03 | 株式会社Adeka | 熱酸発生剤およびこれを用いたレジスト組成物 |
KR20180101564A (ko) | 2016-01-26 | 2018-09-12 | 가부시키가이샤 아데카 | 열산 발생제 및 이것을 사용한 레지스트 조성물 |
JPWO2017130896A1 (ja) * | 2016-01-26 | 2018-11-15 | 株式会社Adeka | 熱酸発生剤およびこれを用いたレジスト組成物 |
US11307495B2 (en) | 2016-01-26 | 2022-04-19 | Adeka Corporation | Thermal acid generator and resist composition using same |
US11754920B2 (en) | 2016-01-26 | 2023-09-12 | Adeka Corporation | Thermal acid generator and resist composition using same |
WO2017187743A1 (ja) * | 2016-04-27 | 2017-11-02 | サンアプロ株式会社 | 光酸発生剤及びフォトリソグラフィー用樹脂組成物 |
JP2018021174A (ja) * | 2016-07-20 | 2018-02-08 | 東京応化工業株式会社 | マイクロレンズパターン製造用ポジ型感光性樹脂組成物及びその用途 |
WO2018101352A1 (ja) * | 2016-11-30 | 2018-06-07 | 株式会社Adeka | ポジ型感光性組成物、それを用いたパターンおよびパターンの製造方法 |
WO2018101353A1 (ja) * | 2016-11-30 | 2018-06-07 | 株式会社Adeka | ネガ型感光性組成物、その硬化物およびその硬化方法 |
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EP2927216B1 (en) | 2018-10-24 |
KR102191331B1 (ko) | 2020-12-15 |
CN104822662B (zh) | 2018-04-03 |
TW201439068A (zh) | 2014-10-16 |
US20150315153A1 (en) | 2015-11-05 |
EP2927216A4 (en) | 2016-04-20 |
KR20150087391A (ko) | 2015-07-29 |
TWI586652B (zh) | 2017-06-11 |
JP6211001B2 (ja) | 2017-10-11 |
JPWO2014084269A1 (ja) | 2017-01-05 |
EP2927216A1 (en) | 2015-10-07 |
CN104822662A (zh) | 2015-08-05 |
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