TWI294992B - - Google Patents

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Publication number
TWI294992B
TWI294992B TW090125418A TW90125418A TWI294992B TW I294992 B TWI294992 B TW I294992B TW 090125418 A TW090125418 A TW 090125418A TW 90125418 A TW90125418 A TW 90125418A TW I294992 B TWI294992 B TW I294992B
Authority
TW
Taiwan
Prior art keywords
group
negative photosensitive
coating film
photosensitive resin
acid
Prior art date
Application number
TW090125418A
Other languages
English (en)
Chinese (zh)
Inventor
Genji Imai
Original Assignee
Kansai Paint Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kansai Paint Co Ltd filed Critical Kansai Paint Co Ltd
Application granted granted Critical
Publication of TWI294992B publication Critical patent/TWI294992B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/34Imagewise removal by selective transfer, e.g. peeling away
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/34Imagewise removal by selective transfer, e.g. peeling away
    • G03F7/346Imagewise removal by selective transfer, e.g. peeling away using photosensitive materials other than non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW090125418A 2000-10-16 2001-10-15 TWI294992B (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000315647A JP2002122987A (ja) 2000-10-16 2000-10-16 ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法

Publications (1)

Publication Number Publication Date
TWI294992B true TWI294992B (https=) 2008-03-21

Family

ID=18794716

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090125418A TWI294992B (https=) 2000-10-16 2001-10-15

Country Status (5)

Country Link
US (1) US6913867B2 (https=)
JP (1) JP2002122987A (https=)
KR (1) KR100550293B1 (https=)
TW (1) TWI294992B (https=)
WO (1) WO2002033487A1 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4519448B2 (ja) * 2002-11-12 2010-08-04 株式会社トクヤマ 光カチオン重合開始剤組成物および光カチオン重合性組成物
KR101239120B1 (ko) * 2004-11-01 2013-03-06 닛산 가가쿠 고교 가부시키 가이샤 술폰산 에스테르를 함유하는 리소그라피용 반사방지막형성 조성물
KR100688708B1 (ko) * 2006-01-23 2007-03-02 삼성전기주식회사 인쇄회로기판의 제조방법
WO2007100078A1 (ja) * 2006-03-03 2007-09-07 Pi R & D Co., Ltd. スクリーン印刷用感光性インク組成物及びそれを用いたポジ型レリーフパターンの形成方法
KR100978401B1 (ko) * 2008-02-26 2010-08-26 한국과학기술연구원 다중 적층 염료 감응 태양전지 및 제조방법
JP2010085988A (ja) * 2008-09-05 2010-04-15 Sumitomo Chemical Co Ltd レジスト処理方法
US8168691B2 (en) * 2009-02-09 2012-05-01 International Business Machines Corporation Vinyl ether resist formulations for imprint lithography and processes of use
US8168109B2 (en) * 2009-08-21 2012-05-01 International Business Machines Corporation Stabilizers for vinyl ether resist formulations for imprint lithography
JP5381508B2 (ja) * 2009-08-27 2014-01-08 Jsr株式会社 ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP2012058728A (ja) * 2010-08-10 2012-03-22 Sumitomo Chemical Co Ltd 感光性樹脂組成物
JP5672906B2 (ja) * 2010-09-28 2015-02-18 ソニー株式会社 レジスト組成物及び半導体装置の製造方法
JP6047885B2 (ja) * 2011-03-08 2016-12-21 住友化学株式会社 着色感光性樹脂組成物
JP5838101B2 (ja) 2012-02-06 2015-12-24 富士フイルム株式会社 パターン形成方法、及びこれらを用いた電子デバイスの製造方法
KR102021745B1 (ko) * 2012-04-27 2019-09-17 에이지씨 가부시키가이샤 부분 가수 분해 축합물, 발잉크제, 네거티브형 감광성 수지 조성물, 경화막, 격벽 및 광학 소자
US8975008B2 (en) 2012-05-24 2015-03-10 Rohm And Haas Electronic Materials Llc Method of removing negative acting photoresists
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6144667B2 (ja) * 2014-12-25 2017-06-07 トヨタ自動車株式会社 摺動部材およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098806A (en) 1989-09-22 1992-03-24 Board Of Regents, The University Of Texas System Photosensitive elements based on polymeric matrices of diacetylenes and spiropyrans and the use thereof as coatings to prevent document reproduction
JP3441246B2 (ja) * 1995-06-07 2003-08-25 富士写真フイルム株式会社 光重合性組成物
JP3522454B2 (ja) 1995-06-27 2004-04-26 株式会社林原生物化学研究所 ベンゾピラン環縮合化合物
EP0789279B2 (en) * 1996-02-09 2004-12-08 Wako Pure Chemical Industries Ltd Polymer and resist material
US6106999A (en) * 1997-08-12 2000-08-22 Mitsui Chemicals Photosensitizer, visible light curable resin composition using the same, and use of the composition
JP3993691B2 (ja) * 1997-09-24 2007-10-17 関西ペイント株式会社 レジストパターン形成方法
JPH11212252A (ja) * 1997-11-19 1999-08-06 Mitsubishi Paper Mills Ltd 平版印刷版
JP2000035665A (ja) * 1998-05-11 2000-02-02 Kunihiro Ichimura 酸増殖剤及び感光性組成物
JP3810215B2 (ja) * 1998-06-17 2006-08-16 富士写真フイルム株式会社 感光性平版印刷版
JP2000056450A (ja) 1998-08-05 2000-02-25 Kansai Paint Co Ltd ポジ型可視光感光性樹脂組成物及びその用途
JP2000275823A (ja) 1999-03-25 2000-10-06 Mitsubishi Paper Mills Ltd 感光性組成物および感光性平版印刷版材料

Also Published As

Publication number Publication date
WO2002033487A1 (fr) 2002-04-25
US20020068237A1 (en) 2002-06-06
KR100550293B1 (ko) 2006-02-08
KR20040004405A (ko) 2004-01-13
JP2002122987A (ja) 2002-04-26
US6913867B2 (en) 2005-07-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees