KR100502381B1 - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents
반도체 장치 및 반도체 장치의 제조 방법 Download PDFInfo
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- KR100502381B1 KR100502381B1 KR10-2003-0000790A KR20030000790A KR100502381B1 KR 100502381 B1 KR100502381 B1 KR 100502381B1 KR 20030000790 A KR20030000790 A KR 20030000790A KR 100502381 B1 KR100502381 B1 KR 100502381B1
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- Prior art keywords
- film
- region
- metal element
- silicon
- silicon oxide
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 30
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 229910052726 zirconium Inorganic materials 0.000 claims description 15
- 229910052735 hafnium Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- 238000005121 nitriding Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 2
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 239000010408 film Substances 0.000 description 177
- 229910052914 metal silicate Inorganic materials 0.000 description 62
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 38
- 238000006243 chemical reaction Methods 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 19
- 239000002994 raw material Substances 0.000 description 19
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 150000002894 organic compounds Chemical class 0.000 description 12
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- -1 oxygen ions Chemical class 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910007926 ZrCl Inorganic materials 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XMLFPUBZFSJWCN-UHFFFAOYSA-N 2-Hydroxy-4-trifluoromethyl benzoic acid Chemical compound OC(=O)C1=CC=C(C(F)(F)F)C=C1O XMLFPUBZFSJWCN-UHFFFAOYSA-N 0.000 description 1
- 244000282866 Euchlaena mexicana Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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Abstract
Description
Claims (23)
- 반도체 기판과, 상기 반도체 기판 위에 형성되고, 메탈 원소를 함유하는 실리콘 산화막을 포함하는 게이트 절연막과, 상기 게이트 절연막 위에 형성된 전극을 포함하는 반도체 장치로서,상기 메탈 원소를 함유하는 실리콘 산화막은, 하면 근방의 제1 영역과, 상면 근방의 제2 영역과, 제1 영역과 제2 영역 사이의 제3 영역을 갖고,상기 실리콘 산화막에 함유된 메탈 원소의 두께 방향에서의 농도 분포는, 상기 제3 영역에 최대점을 갖는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 실리콘 산화막은 질소를 더 함유하고,상기 실리콘 산화막에 함유된 질소의 두께 방향에서의 농도 분포는 상기 제2 영역에 최대점을 갖는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 실리콘 산화막에 함유된 메탈 원소는 Zr, Hf, Al 및 La의 그룹 중에서 선택되는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 실리콘 산화막은 다른 메탈 원소를 더 함유하고,상기 다른 메탈 원소는 Zr, Hf, Al 및 La의 그룹 중에서 선택되는 것을 특징으로 하는 반도체 장치.
- 하면 근방의 제1 영역과, 상면 근방의 제2 영역과, 제1 영역과 제2 영역 사이의 제3 영역을 갖고, 메탈 원소의 두께 방향에서의 농도 분포가 제1 영역 또는 제3 영역에 최대점을 갖는, 메탈 원소를 함유하는 비정질 실리콘막을 반도체 기판 위에 형성하는 공정과,상기 메탈 원소를 함유하는 비정질 실리콘막을 산화하여, 상기 메탈 원소를 함유하는 실리콘 산화막을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 실리콘 산화막의 표면을 질화하는 공정을 더 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 비정질 실리콘막은 메탈 소스와 실리콘 소스를 이용한 CVD로 형성되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제7항에 있어서,상기 메탈 소스는 상기 메탈 원소의 할로겐화물이고, 상기 실리콘 소스는 실리콘의 수소화물인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 비정질 실리콘막은, 활성인 산화종을 이용하여 산화되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제6항에 있어서,상기 실리콘 산화막의 표면은, 플라즈마를 이용하여 질화되는 것을 특징으로 하는 반도체 장치의 제조 방법.
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US7282774B2 (en) | 2007-10-16 |
TW589660B (en) | 2004-06-01 |
US20030127640A1 (en) | 2003-07-10 |
KR20050011003A (ko) | 2005-01-28 |
JP4102072B2 (ja) | 2008-06-18 |
US20050006674A1 (en) | 2005-01-13 |
US6844234B2 (en) | 2005-01-18 |
KR20030060804A (ko) | 2003-07-16 |
US7858536B2 (en) | 2010-12-28 |
US7101775B2 (en) | 2006-09-05 |
US20060244083A1 (en) | 2006-11-02 |
JP2003204061A (ja) | 2003-07-18 |
US20080242115A1 (en) | 2008-10-02 |
CN1431716A (zh) | 2003-07-23 |
KR100512824B1 (ko) | 2005-09-07 |
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