JP2008258614A - 基板上への酸窒化物薄膜の成長方法 - Google Patents
基板上への酸窒化物薄膜の成長方法 Download PDFInfo
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- JP2008258614A JP2008258614A JP2008085284A JP2008085284A JP2008258614A JP 2008258614 A JP2008258614 A JP 2008258614A JP 2008085284 A JP2008085284 A JP 2008085284A JP 2008085284 A JP2008085284 A JP 2008085284A JP 2008258614 A JP2008258614 A JP 2008258614A
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- oxynitride film
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- 238000000034 method Methods 0.000 title claims abstract description 109
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 172
- 239000007789 gas Substances 0.000 claims abstract description 103
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 85
- 230000008569 process Effects 0.000 claims abstract description 50
- 238000005121 nitriding Methods 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000001272 nitrous oxide Substances 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 111
- 239000010703 silicon Substances 0.000 claims description 111
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 107
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 34
- 238000000137 annealing Methods 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000012895 dilution Substances 0.000 claims description 14
- 238000010790 dilution Methods 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 239000003085 diluting agent Substances 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- 229910001868 water Inorganic materials 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 4
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 129
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000005527 interface trap Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000003949 trap density measurement Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02249—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by combined oxidation and nitridation performed simultaneously
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】基板上に酸窒化膜を成長する方法は、処理チャンバ内に基板を設ける工程100、処理チャンバを加熱する工程102、並びに、水蒸気を含む湿式処理ガス及び亜酸化窒素(NO)を含む窒化ガスを処理チャンバへ流し込む工程104を有する。湿式処理ガス及び窒化ガスは、基板上に酸窒化膜が成長するように、基板と反応する処理雰囲気を形成する。
【選択図】図2
Description
12 処理チャンバ
13 回転可能な基板ホルダ
14 真空ポート
15 排気ポート
16 吸入ポート
18 発熱性トーチ
20 基板
30 酸窒化膜
32 窒素プロファイル
34 窒素ピーク濃度
40 シリコン基板
50 シリコン酸窒化膜
52 外側表面
54 界面
902 曲線
904 曲線
906 データ組
908 データ組
Claims (16)
- 基板上に酸窒化膜を成長する方法であって:
前記基板を処理チャンバ内に設ける設置工程;
前記処理チャンバを処理温度に加熱する加熱工程;
前記処理チャンバへ水蒸気を含む湿式処理ガス及び一酸化窒素を含む窒化ガスを流し込む流入工程;並びに
前記基板を、前記湿式処理ガス及び前記窒化ガスと、前記処理温度で反応させることで、前記基板上に酸窒化膜を成長させる、反応工程;
を有する方法。 - 水素ガスと酸素ガスを燃焼させることで、前記処理チャンバ外部で前記湿式処理ガスを生成する生成工程をさらに有する、請求項1に記載の方法。
- 前記湿式処理ガスと前記窒化ガスはほぼ同時に流される、請求項1に記載の方法。
- 前記湿式処理ガスを流しながら希釈ガスを前記処理チャンバに流すことで前記酸窒化膜の成長速度を制御する工程をさらに有する、請求項1に記載の方法。
- 前記湿式処理ガス、前記窒化ガス、及び前記希釈ガスが、ほぼ同時に流される、請求項4に記載の方法。
- 前記反応工程後に、前記酸窒化膜を上に有する前記基板を、窒素、一酸化窒素、亜酸化窒素、酸素、若しくは水、又はこれらの混合ガスを含むアニーリングガス中でアニーリングする工程をさらに有する、請求項1に記載の方法。
- 前記処理温度が約600℃から約1100℃である、請求項1に記載の方法。
- 前記処理温度が約850℃よりも高温である、請求項1に記載の方法。
- 前記反応工程が、前記酸窒化膜を約40Å未満の厚さに成長させる、請求項1に記載の方法。
- 前記処理チャンバがバッチ処理システムで、かつ
前記設置工程が、前記処理チャンバ内に複数の基板を設置する工程を有し、
それにより前記酸窒化膜は、前記複数の基板の各々の上に成長する、
請求項1に記載の方法。 - 前記基板がシリコンを有し、
それにより前記反応工程は、前記基板上にシリコン酸窒化膜を成長させる、
請求項1に記載の方法。 - 前記シリコン酸窒化膜を上に有する前記基板が、約0.5から約5原子%の窒素ピーク濃度を示す、請求項11に記載の方法。
- 前記のシリコン酸窒化膜を上に有する基板が、前記シリコン酸窒化膜中で窒素ピーク濃度を示す、請求項11に記載の方法。
- 前記湿式処理ガスと前記窒化ガスとの比を制御することで、前記のシリコン酸窒化膜中で窒素ピーク濃度を示すシリコン酸窒化膜を成長させる工程をさらに有する、請求項13に記載の方法。
- 基板上にシリコン酸窒化膜を成長する方法であって:
シリコンを含む前記基板を処理チャンバ内に設ける設置工程;
前記処理チャンバを少なくとも850℃の処理温度に加熱する加熱工程;
水素ガスと酸素ガスを燃焼させることで、前記処理チャンバ外部で水蒸気を含む前記湿式処理ガスを生成する生成工程;
前記処理チャンバへ、前記湿式処理ガス、窒素を含む希釈ガス、及び一酸化窒素を含む窒化ガスを流し込むことで、前記基板と反応させて、約0.5原子%から約14原子%の間の窒素ピーク濃度を有するシリコン酸窒化膜を前記基板上に成長させる、流入工程;
を有する方法。 - 前記処理チャンバがバッチ処理システムで、かつ
前記設置工程が、前記処理チャンバ内に複数の基板を設置する工程を有し、
それにより前記酸窒化膜は、前記複数の基板の各々の上に成長する、
請求項15に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/694,643 US7534731B2 (en) | 2007-03-30 | 2007-03-30 | Method for growing a thin oxynitride film on a substrate |
Publications (2)
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JP2008258614A true JP2008258614A (ja) | 2008-10-23 |
JP2008258614A5 JP2008258614A5 (ja) | 2011-05-12 |
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JP2008085284A Pending JP2008258614A (ja) | 2007-03-30 | 2008-03-28 | 基板上への酸窒化物薄膜の成長方法 |
Country Status (2)
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US (1) | US7534731B2 (ja) |
JP (1) | JP2008258614A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9077174B2 (en) | 2010-09-29 | 2015-07-07 | Murata Manufacturing Co., Ltd. | ESD protection device and manufacturing method therefor |
WO2016038660A1 (ja) * | 2014-09-08 | 2016-03-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011066219A (ja) * | 2009-09-17 | 2011-03-31 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
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US9077174B2 (en) | 2010-09-29 | 2015-07-07 | Murata Manufacturing Co., Ltd. | ESD protection device and manufacturing method therefor |
WO2016038660A1 (ja) * | 2014-09-08 | 2016-03-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
JPWO2016038660A1 (ja) * | 2014-09-08 | 2017-05-25 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
US9905413B2 (en) | 2014-09-08 | 2018-02-27 | Hitachi Kokusai Electric, Inc. | Method of manufacturing semiconductor device |
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US7534731B2 (en) | 2009-05-19 |
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