KR20030060804A - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents
반도체 장치 및 반도체 장치의 제조 방법 Download PDFInfo
- Publication number
- KR20030060804A KR20030060804A KR10-2003-0000790A KR20030000790A KR20030060804A KR 20030060804 A KR20030060804 A KR 20030060804A KR 20030000790 A KR20030000790 A KR 20030000790A KR 20030060804 A KR20030060804 A KR 20030060804A
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- South Korea
- Prior art keywords
- metal element
- silicon
- semiconductor device
- organic compound
- film
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 86
- 239000002184 metal Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 35
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 150000002894 organic compounds Chemical class 0.000 claims description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 229910052726 zirconium Inorganic materials 0.000 claims description 17
- 229910052735 hafnium Inorganic materials 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims description 11
- -1 alkoxide compound Chemical class 0.000 claims description 10
- 238000005121 nitriding Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 2
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 230000000977 initiatory effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 177
- 229910052914 metal silicate Inorganic materials 0.000 description 62
- 238000006243 chemical reaction Methods 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 23
- 239000002994 raw material Substances 0.000 description 20
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910007926 ZrCl Inorganic materials 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XMLFPUBZFSJWCN-UHFFFAOYSA-N 2-Hydroxy-4-trifluoromethyl benzoic acid Chemical compound OC(=O)C1=CC=C(C(F)(F)F)C=C1O XMLFPUBZFSJWCN-UHFFFAOYSA-N 0.000 description 1
- 244000282866 Euchlaena mexicana Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Classifications
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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Abstract
Description
Claims (23)
- 반도체 기판과, 상기 반도체 기판 위에 형성되고, 메탈 원소를 함유하는 실리콘 산화막을 포함하는 게이트 절연막과, 상기 게이트 절연막 위에 형성된 전극을 포함하는 반도체 장치로서,상기 메탈 원소를 함유하는 실리콘 산화막은, 하면 근방의 제1 영역과, 상면 근방의 제2 영역과, 제1 영역과 제2 영역 사이의 제3 영역을 갖고,상기 실리콘 산화막에 함유된 메탈 원소의 두께 방향에서의 농도 분포는, 상기 제3 영역에 최대점을 갖는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 실리콘 산화막은 질소를 더 함유하고,상기 실리콘 산화막에 함유된 질소의 두께 방향에서의 농도 분포는 상기 제2 영역에 최대점을 갖는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 실리콘 산화막에 함유된 메탈 원소는 Zr, Hf, Al 및 La의 그룹 중에서 선택되는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 실리콘 산화막은 다른 메탈 원소를 더 함유하고,상기 다른 메탈 원소는 Zr, Hf, Al 및 La의 그룹 중에서 선택되는 것을 특징으로 하는 반도체 장치.
- 하면 근방의 제1 영역과, 상면 근방의 제2 영역과, 제1 영역과 제2 영역 사이의 제3 영역을 갖고, 메탈 원소의 두께 방향에서의 농도 분포가 제1 영역 또는 제3 영역에 최대점을 갖는, 메탈 원소를 함유하는 비정질 실리콘막을 반도체 기판 위에 형성하는 공정과,상기 메탈 원소를 함유하는 비정질 실리콘막을 산화하여, 상기 메탈 원소를 함유하는 실리콘 산화막을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 실리콘 산화막의 표면을 질화하는 공정을 더 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 비정질 실리콘막은 메탈 소스와 실리콘 소스를 이용한 CVD로 형성되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제7항에 있어서,상기 메탈 소스는 상기 메탈 원소의 할로겐화물이고, 상기 실리콘 소스는 실리콘의 수소화물인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 비정질 실리콘막은, 활성인 산화종을 이용하여 산화되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제6항에 있어서,상기 실리콘 산화막의 표면은, 플라즈마를 이용하여 질화되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 실리콘을 함유하는 유기 화합물과, Zr, Hf, Al 및 La의 그룹 중에서 선택된 메탈 원소를 함유하는 유기 화합물을, 기판이 보유된 용기에 공급하는 공정과,산소의 활성종을 이용하지 않은 열 CVD에 의해, 상기 기판 위에 상기 메탈 원소를 함유하는 실리콘 산화막을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제11항에 있어서,상기 용기에 O2가스를 더 공급하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제11항에 있어서,상기 메탈 원소를 함유하는 실리콘 산화막은 게이트 절연막인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제11항에 있어서,상기 메탈 원소를 함유하는 유기 화합물은 다른 메탈 원소를 더 함유하고,상기 다른 메탈 원소는 Zr, Hf, Al 및 La의 그룹 중에서 선택되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제11항에 있어서,상기 용기에 공급되는 상기 메탈 원소를 함유하는 유기 화합물의 공급량은, 상기 용기에 공급되는 상기 실리콘을 함유하는 유기 화합물의 공급량의 1/10 이하인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제11항에 있어서,상기 실리콘 산화막에 함유된 메탈 원소의 원자 수를 NM, 실리콘의 원자 수를 Nsi로 할 때,0<NM/(NM+Nsi)<0.5인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 메탈 원소를 함유하는 실리콘 산화막을 CVD에 의해 반도체 기판 위에 형성하는 공정을 포함하는 반도체 장치의 제조 방법으로서,반도체 기판이 보유된 용기에의 실리콘을 함유하는 유기 화합물의 공급을 개시하는 공정과,상기 실리콘을 함유하는 유기 화합물의 공급을 개시한 후에, 상기 용기에의 메탈 원소를 함유하는 유기 화합물의 공급을 개시하는 공정과,상기 용기에의 상기 메탈 원소를 함유하는 유기 화합물의 공급량을 증가시키는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제17항에 있어서,상기 메탈 원소를 함유하는 유기 화합물의 공급량을 증가시킨 후, 상기 용기에의 상기 메탈 원소를 함유하는 유기 화합물의 공급량을 감소시키는 공정과,상기 용기에의 상기 메탈 원소를 함유하는 유기 화합물의 공급을 정지하는 공정과,상기 메탈 원소를 함유하는 유기 화합물의 공급을 정지한 후, 상기 용기에의 상기 실리콘을 함유하는 유기 화합물의 공급을 정지하는 공정을 더 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제18항에 있어서,상기 실리콘을 함유하는 유기 화합물의 공급을 정지한 후에 얻어진 상기 메탈 원소를 함유하는 실리콘 산화막의 표면을 질화하는 공정을 더 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제11항 또는 제17항에 있어서,상기 실리콘을 함유하는 유기 화합물은 실리콘의 알콕시드 화합물인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제20항에 있어서,상기 실리콘의 알콕시드 화합물은 테트라에톡시 실란인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제11항 또는 제17항에 있어서,상기 메탈 원소를 함유하는 유기 화합물은 상기 메탈 원소의 알콕시드 화합물인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제22항에 있어서,상기 메탈 원소의 알콕시드 화합물은 터셔리부토키시 화합물인 것을 특징으로 하는 반도체 장치의 제조 방법.
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CN100565916C (zh) | 2002-07-16 | 2009-12-02 | 日本电气株式会社 | 半导体器件及其制造方法 |
JP2004193150A (ja) * | 2002-12-06 | 2004-07-08 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
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US20040237889A1 (en) * | 2003-05-28 | 2004-12-02 | Winbond Electronics Corporation | Chemical gas deposition process and dry etching process and apparatus of same |
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JP4059183B2 (ja) | 2003-10-07 | 2008-03-12 | ソニー株式会社 | 絶縁体薄膜の製造方法 |
WO2005037856A2 (en) | 2003-10-15 | 2005-04-28 | Board Of Regents, The University Of Texas System | Multifunctional biomaterials as scaffolds for electronic, optical, magnetic, semiconducting, and biotechnological applications |
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JP2005191482A (ja) * | 2003-12-26 | 2005-07-14 | Semiconductor Leading Edge Technologies Inc | 半導体装置及びその製造方法 |
JP4680066B2 (ja) * | 2004-01-28 | 2011-05-11 | 東京エレクトロン株式会社 | 基板処理装置の処理室清浄化方法、基板処理装置、および基板処理方法 |
JP4542807B2 (ja) * | 2004-03-31 | 2010-09-15 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびにゲート絶縁膜の形成方法 |
GB0412790D0 (en) * | 2004-06-08 | 2004-07-14 | Epichem Ltd | Precursors for deposition of silicon nitride,silicon oxynitride and metal silicon oxynitrides |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP4563113B2 (ja) * | 2004-08-26 | 2010-10-13 | 株式会社日立国際電気 | シリコン酸化膜の形成方法、半導体デバイスの製造方法および基板処理装置 |
JP4564310B2 (ja) * | 2004-09-01 | 2010-10-20 | 株式会社日立国際電気 | 半導体装置の製造方法 |
JP4028538B2 (ja) * | 2004-09-10 | 2007-12-26 | 株式会社東芝 | 半導体装置の製造方法およびその製造装置 |
US7563727B2 (en) * | 2004-11-08 | 2009-07-21 | Intel Corporation | Low-k dielectric layer formed from aluminosilicate precursors |
KR100648632B1 (ko) | 2005-01-25 | 2006-11-23 | 삼성전자주식회사 | 높은 유전율을 갖는 유전체 구조물의 제조 방법 및 이를 포함하는 반도체 소자의 제조 방법 |
US7501352B2 (en) * | 2005-03-30 | 2009-03-10 | Tokyo Electron, Ltd. | Method and system for forming an oxynitride layer |
US7517814B2 (en) * | 2005-03-30 | 2009-04-14 | Tokyo Electron, Ltd. | Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently |
US20060228898A1 (en) * | 2005-03-30 | 2006-10-12 | Cory Wajda | Method and system for forming a high-k dielectric layer |
JP4689324B2 (ja) * | 2005-04-04 | 2011-05-25 | 東京エレクトロン株式会社 | 成膜装置、成膜方法および記録媒体 |
JP2006310601A (ja) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | 半導体装置およびその製造方法 |
US20070065593A1 (en) * | 2005-09-21 | 2007-03-22 | Cory Wajda | Multi-source method and system for forming an oxide layer |
US20070066084A1 (en) * | 2005-09-21 | 2007-03-22 | Cory Wajda | Method and system for forming a layer with controllable spstial variation |
US7812412B2 (en) | 2005-10-04 | 2010-10-12 | Nec Corporation | Semiconductor device |
US8053849B2 (en) * | 2005-11-09 | 2011-11-08 | Advanced Micro Devices, Inc. | Replacement metal gate transistors with reduced gate oxide leakage |
JP4413858B2 (ja) | 2005-12-13 | 2010-02-10 | 株式会社東芝 | 乱数検定回路 |
JP2007235093A (ja) * | 2006-01-31 | 2007-09-13 | Toshiba Corp | 半導体装置の製造方法 |
US8012822B2 (en) * | 2007-12-27 | 2011-09-06 | Canon Kabushiki Kaisha | Process for forming dielectric films |
US8148275B2 (en) * | 2007-12-27 | 2012-04-03 | Canon Kabushiki Kaisha | Method for forming dielectric films |
JP5286052B2 (ja) | 2008-11-28 | 2013-09-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR101584100B1 (ko) | 2009-10-29 | 2016-01-13 | 삼성전자주식회사 | 금속 실리케이트 막의 형성 방법 및 이를 이용한 반도체 소자의 형성 방법 |
US20160300954A1 (en) * | 2013-12-02 | 2016-10-13 | Joled Inc. | Thin-film transistor and manufacturing method for same |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US23120A (en) * | 1859-03-01 | Washing-machine | ||
US500113A (en) * | 1893-06-27 | harrison | ||
US64970A (en) * | 1867-05-21 | graham | ||
US3796182A (en) * | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
JPS5661165A (en) | 1979-10-24 | 1981-05-26 | Fujitsu Ltd | Control of threshold voltage of transistor |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US6444137B1 (en) * | 1990-07-31 | 2002-09-03 | Applied Materials, Inc. | Method for processing substrates using gaseous silicon scavenger |
JPH04221822A (ja) * | 1990-12-21 | 1992-08-12 | Kazuo Tsubouchi | 堆積膜形成法 |
JPH05226608A (ja) | 1992-02-10 | 1993-09-03 | Matsushita Electric Ind Co Ltd | 薄膜高誘電率体およびその製造方法 |
JPH05239650A (ja) | 1992-02-27 | 1993-09-17 | Kojundo Chem Lab Co Ltd | シリコン酸化膜の製造法 |
JP2900732B2 (ja) | 1992-11-24 | 1999-06-02 | 三菱電機株式会社 | 光導波路の製造方法 |
KR100291971B1 (ko) * | 1993-10-26 | 2001-10-24 | 야마자끼 순페이 | 기판처리장치및방법과박막반도체디바이스제조방법 |
US6159854A (en) * | 1994-08-22 | 2000-12-12 | Fujitsu Limited | Process of growing conductive layer from gas phase |
KR100272259B1 (ko) * | 1996-10-23 | 2000-12-01 | 김영환 | 반도체소자의실리사이드막의형성방법 |
JPH10308361A (ja) | 1997-05-07 | 1998-11-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP3406811B2 (ja) | 1997-09-17 | 2003-05-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR19990014155A (ko) | 1997-07-24 | 1999-02-25 | 윌리엄 비. 켐플러 | 고 유전율 실리케이트 게이트 유전체 |
US6451686B1 (en) * | 1997-09-04 | 2002-09-17 | Applied Materials, Inc. | Control of semiconductor device isolation properties through incorporation of fluorine in peteos films |
JPH11111715A (ja) | 1997-10-03 | 1999-04-23 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6146938A (en) * | 1998-06-29 | 2000-11-14 | Kabushiki Kaisha Toshiba | Method of fabricating semiconductor device |
JP2000049349A (ja) | 1998-07-15 | 2000-02-18 | Texas Instr Inc <Ti> | 集積回路に電界効果デバイスを製造する方法 |
US6291283B1 (en) * | 1998-11-09 | 2001-09-18 | Texas Instruments Incorporated | Method to form silicates as high dielectric constant materials |
JP3415496B2 (ja) | 1999-07-07 | 2003-06-09 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US6399208B1 (en) * | 1999-10-07 | 2002-06-04 | Advanced Technology Materials Inc. | Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films |
AU2001234468A1 (en) * | 2000-01-19 | 2001-07-31 | North Carolina State University | Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same |
JP2001257344A (ja) * | 2000-03-10 | 2001-09-21 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2001291865A (ja) | 2000-04-10 | 2001-10-19 | Sharp Corp | 絶縁ゲート型トランジスタ及びその製造方法 |
KR100721503B1 (ko) | 2000-06-08 | 2007-05-23 | 에이에스엠지니텍코리아 주식회사 | 박막 형성 방법 |
EP2293322A1 (en) | 2000-06-08 | 2011-03-09 | Genitech, Inc. | Method for forming a metal nitride layer |
JP2002076336A (ja) * | 2000-09-01 | 2002-03-15 | Mitsubishi Electric Corp | 半導体装置およびsoi基板 |
US6486080B2 (en) * | 2000-11-30 | 2002-11-26 | Chartered Semiconductor Manufacturing Ltd. | Method to form zirconium oxide and hafnium oxide for high dielectric constant materials |
US6566147B2 (en) * | 2001-02-02 | 2003-05-20 | Micron Technology, Inc. | Method for controlling deposition of dielectric films |
US6844604B2 (en) * | 2001-02-02 | 2005-01-18 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
US7005392B2 (en) * | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US6642131B2 (en) * | 2001-06-21 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Method of forming a silicon-containing metal-oxide gate dielectric by depositing a high dielectric constant film on a silicon substrate and diffusing silicon from the substrate into the high dielectric constant film |
US20030013241A1 (en) * | 2001-07-16 | 2003-01-16 | Motorola, Inc. | Structure and method for fabricating vertical fet semiconductor structures and devices |
JP4120938B2 (ja) | 2001-08-23 | 2008-07-16 | 日本電気株式会社 | 高誘電率絶縁膜を有する半導体装置とその製造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100608453B1 (ko) * | 2005-04-30 | 2006-08-02 | 주식회사 아이피에스 | HfSiN 박막증착방법 |
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US20030127640A1 (en) | 2003-07-10 |
JP4102072B2 (ja) | 2008-06-18 |
US20080242115A1 (en) | 2008-10-02 |
KR100512824B1 (ko) | 2005-09-07 |
TW589660B (en) | 2004-06-01 |
JP2003204061A (ja) | 2003-07-18 |
US20050006674A1 (en) | 2005-01-13 |
US7101775B2 (en) | 2006-09-05 |
US7282774B2 (en) | 2007-10-16 |
US6844234B2 (en) | 2005-01-18 |
KR100502381B1 (ko) | 2005-07-19 |
KR20050011003A (ko) | 2005-01-28 |
CN1431716A (zh) | 2003-07-23 |
US20060244083A1 (en) | 2006-11-02 |
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