KR100495751B1 - 진공 상태에서의 기판 도포 방법 및 그 장치 - Google Patents

진공 상태에서의 기판 도포 방법 및 그 장치 Download PDF

Info

Publication number
KR100495751B1
KR100495751B1 KR10-2002-7005091A KR20027005091A KR100495751B1 KR 100495751 B1 KR100495751 B1 KR 100495751B1 KR 20027005091 A KR20027005091 A KR 20027005091A KR 100495751 B1 KR100495751 B1 KR 100495751B1
Authority
KR
South Korea
Prior art keywords
outlet
deposition material
substrate
source
deposition
Prior art date
Application number
KR10-2002-7005091A
Other languages
English (en)
Korean (ko)
Other versions
KR20020068039A (ko
Inventor
게리엘.스미스
Original Assignee
커트 제이. 레스커 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 커트 제이. 레스커 컴파니 filed Critical 커트 제이. 레스커 컴파니
Publication of KR20020068039A publication Critical patent/KR20020068039A/ko
Application granted granted Critical
Publication of KR100495751B1 publication Critical patent/KR100495751B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR10-2002-7005091A 1999-10-22 2000-10-20 진공 상태에서의 기판 도포 방법 및 그 장치 KR100495751B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16109499P 1999-10-22 1999-10-22
US60/161,094 1999-10-22

Publications (2)

Publication Number Publication Date
KR20020068039A KR20020068039A (ko) 2002-08-24
KR100495751B1 true KR100495751B1 (ko) 2005-06-17

Family

ID=22579796

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-7005091A KR100495751B1 (ko) 1999-10-22 2000-10-20 진공 상태에서의 기판 도포 방법 및 그 장치

Country Status (9)

Country Link
EP (1) EP1246951A4 (de)
JP (1) JP2003513169A (de)
KR (1) KR100495751B1 (de)
CN (1) CN1175126C (de)
AU (1) AU1339401A (de)
CA (1) CA2388178A1 (de)
DE (1) DE10085115T1 (de)
TW (1) TW574396B (de)
WO (1) WO2001031081A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW490714B (en) 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
US20020011205A1 (en) 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
JP4704605B2 (ja) * 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
KR100473485B1 (ko) * 2002-03-19 2005-03-09 주식회사 이노벡스 유기 반도체 소자 박막 제작을 위한 선형 증발원
EP1369499A3 (de) 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Verfahren und Vorrichtung zur Herstellung eines lichtemittierenden Bauteils
US6749906B2 (en) 2002-04-25 2004-06-15 Eastman Kodak Company Thermal physical vapor deposition apparatus with detachable vapor source(s) and method
US20040035360A1 (en) 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
US20040123804A1 (en) 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
US7211461B2 (en) 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US7211454B2 (en) 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
US8123862B2 (en) 2003-08-15 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and manufacturing apparatus
JP4551996B2 (ja) * 2003-10-09 2010-09-29 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 蒸発装置
US20050241585A1 (en) * 2004-04-30 2005-11-03 Eastman Kodak Company System for vaporizing materials onto a substrate surface
ITMI20042279A1 (it) 2004-11-24 2005-02-24 Getters Spa Sistema dispensatore di metalli alcalini in grado di dispensare quantita' elevate di metalli
JP2006225757A (ja) * 2005-01-21 2006-08-31 Mitsubishi Heavy Ind Ltd 真空蒸着装置
KR100635496B1 (ko) * 2005-02-25 2006-10-17 삼성에스디아이 주식회사 격벽을 구비하는 측면 분사형 선형 증발원 및 그 증발원을구비하는 증착장치
US7433141B2 (en) 2005-03-09 2008-10-07 Tandberg Data Corporation Data randomization for rewriting in recording/reproduction apparatus
JP4696710B2 (ja) * 2005-06-15 2011-06-08 ソニー株式会社 蒸着成膜装置および蒸着源
KR100745619B1 (ko) * 2006-04-11 2007-08-02 한국전기연구원 플룸 형상 제어 레이저 증착 시스템
KR101108152B1 (ko) * 2009-04-30 2012-01-31 삼성모바일디스플레이주식회사 증착 소스
KR101094299B1 (ko) 2009-12-17 2011-12-19 삼성모바일디스플레이주식회사 선형 증발원 및 이를 포함하는 증착 장치
KR102077803B1 (ko) * 2013-05-21 2020-02-17 삼성디스플레이 주식회사 증착원 및 유기층 증착 장치
CN104178734B (zh) * 2014-07-21 2016-06-15 京东方科技集团股份有限公司 蒸发镀膜装置
KR102319998B1 (ko) * 2015-01-22 2021-11-01 삼성디스플레이 주식회사 볼륨 가변형 도가니를 구비한 증착원
KR102488260B1 (ko) * 2016-03-07 2023-01-13 삼성디스플레이 주식회사 증착 장치 및 표시 장치의 제조 방법
CN106148878B (zh) * 2016-06-24 2018-06-08 中南大学 一种模拟高温喷镀过程的装置及其使用方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970246C (de) * 1948-10-02 1958-08-28 Siemens Ag Vorrichtung zur laufenden Bedampfung endloser Gebilde
GB685269A (en) * 1951-02-02 1952-12-31 Nat Res Corp Apparatus and process for coating a substrate with a metal
US3746502A (en) * 1971-12-20 1973-07-17 Xerox Corp Evaporation crucible
DE2436431B2 (de) * 1974-07-29 1978-07-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verdampfer und Verfahren zum Herstellen von Aufdampfschichten, insbesondere aus Selen
US4023523A (en) * 1975-04-23 1977-05-17 Xerox Corporation Coater hardware and method for obtaining uniform photoconductive layers on a xerographic photoreceptor
US4264803A (en) * 1978-01-10 1981-04-28 Union Carbide Corporation Resistance-heated pyrolytic boron nitride coated graphite boat for metal vaporization
US4332838A (en) * 1980-09-24 1982-06-01 Wegrzyn James E Particulate thin film fabrication process
JPS57169082A (en) * 1981-04-08 1982-10-18 Mitsubishi Heavy Ind Ltd Continuous vacuum vapor-depositing method
JPS5943869A (ja) * 1982-09-04 1984-03-12 Konishiroku Photo Ind Co Ltd 蒸着方法
DE3330092A1 (de) * 1983-08-20 1985-03-07 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum einstellen der oertlichen verdampfungsleistung an verdampfern in vakuumaufdampfprozessen
IT1197806B (it) * 1986-08-01 1988-12-06 Metalvuoto Films Spa Procedimento ed apparecchiatura per la realizzazione di pellicole metallizzate per condesatori elettrici e prodotti cosi' ottenuti
GB2211209A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of forming a defect mixed oxide
US5182567A (en) * 1990-10-12 1993-01-26 Custom Metallizing Services, Inc. Retrofittable vapor source for vacuum metallizing utilizing spatter reduction means
US5167984A (en) * 1990-12-06 1992-12-01 Xerox Corporation Vacuum deposition process
DE4123342C2 (de) * 1991-07-15 1999-08-19 Leybold Ag Reihenverdampfer für Vakuumbedampfungsanlagen
US5336324A (en) * 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
DE4203632C2 (de) * 1992-02-08 2003-01-23 Applied Films Gmbh & Co Kg Vakuumbeschichtungsanlage
US5803976A (en) * 1993-11-09 1998-09-08 Imperial Chemical Industries Plc Vacuum web coating
US5433791A (en) * 1994-05-26 1995-07-18 Hughes Aircraft Company MBE apparatus with photo-cracker cell
JPH0853763A (ja) * 1994-06-06 1996-02-27 Matsushita Electric Ind Co Ltd 薄膜の製造方法
DE4422697C1 (de) * 1994-06-29 1996-01-25 Zsw Verdampferquelle für eine Aufdampfanlage und ihre Verwendung
US5709753A (en) * 1995-10-27 1998-01-20 Specialty Coating Sysetms, Inc. Parylene deposition apparatus including a heated and cooled dimer crucible
GB2339800B (en) * 1998-07-24 2003-04-09 Gen Vacuum Equipment Ltd A vacuum process for depositing zinc sulphide and other coatings on flexible moving web
US6082296A (en) * 1999-09-22 2000-07-04 Xerox Corporation Thin film deposition chamber

Also Published As

Publication number Publication date
CN1175126C (zh) 2004-11-10
EP1246951A1 (de) 2002-10-09
KR20020068039A (ko) 2002-08-24
EP1246951A4 (de) 2004-10-13
JP2003513169A (ja) 2003-04-08
WO2001031081A1 (en) 2001-05-03
DE10085115T1 (de) 2002-11-07
CN1402800A (zh) 2003-03-12
CA2388178A1 (en) 2001-05-03
TW574396B (en) 2004-02-01
AU1339401A (en) 2001-05-08

Similar Documents

Publication Publication Date Title
KR100495751B1 (ko) 진공 상태에서의 기판 도포 방법 및 그 장치
US6830626B1 (en) Method and apparatus for coating a substrate in a vacuum
JP4782219B2 (ja) 真空蒸着装置
US6837939B1 (en) Thermal physical vapor deposition source using pellets of organic material for making OLED displays
EP1803836B1 (de) Verdampfungsquelle und Verfahren zum Ablagern eines Dünnfilms damit
KR101263005B1 (ko) 증착 장치 및 방법
US20050072361A1 (en) Multi-layered radiant thermal evaporator and method of use
JP4599727B2 (ja) 蒸着装置
US20090142489A1 (en) Linear deposition sources for deposition processes
US20040223750A1 (en) Evaporation apparatus
JP4156885B2 (ja) 薄膜形成装置
US20050147753A1 (en) Material deposition system and a method for coating a substrate or thermally processing a material in a vacuum
US6082296A (en) Thin film deposition chamber
EP3559304A1 (de) Lineare dampfquelle
EP3494243B1 (de) Homogene lineare verdampfungsquelle mit heizer
US20040223751A1 (en) Evaporation apparatus
KR20190130794A (ko) 열증착기용 필라멘트 히터
KR20030067146A (ko) 진공 증착장치의 가열용기
US10982319B2 (en) Homogeneous linear evaporation source
KR102549982B1 (ko) 증발원 장치, 증착 장치, 및 증발원 장치의 제어 방법
KR100583044B1 (ko) 선형 증착물질 가열장치
KR100503425B1 (ko) 유기물 박막 및 유기물 소자를 위한 콜드월 형태의 저진공유기물 기상 증착장치와 증착방법
KR100629476B1 (ko) 증착물질 가열장치
KR100908971B1 (ko) 표시장치 기판의 증착막 형성장치
WO2008016247A1 (en) Linear deposition sources for deposition processes

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee