KR100495751B1 - Method and apparatus for coating a substrate in a vacuum - Google Patents

Abstract

The surface of the substrate in a vacuum state where a material source having a substantially longitudinal discharge element is used to form a substantially longitudinal deposition discharge plume that applies the surface of the substrate without increasing the reach between the substrate and the material source. A method and apparatus for applying a deposition material to a substrate is disclosed.

Description

Substrate coating method and apparatus therefor in a vacuum state {METHOD AND APPARATUS FOR COATING A SUBSTRATE IN A VACUUM}

The present invention relates to a coating agent, and more particularly, to a method and apparatus for applying a substrate using a deposition material in a vacuum state.

Generally, application of a substrate using a deposition material involves vaporization of the deposition material in a vacuum such that the vaporized deposition material condenses on the substrate at a temperature lower than the temperature of the vaporized deposition material.

In the manufacture of organic-based devices, a thin, flat film-like substrate is applied to at least one side of the substrate, usually by an organic chemical application process. The material of the substrate may be formed from glass or plastic / polymer and typically has a flat structure. However, it may also consist of curved surfaces that are not curved or flat. In general, the size of the substrate to be applied is limited to several square inches due to the limitation of the technical capability of the current substrate material.

Most organics such as organic-based LED devices, organic-based lasers, organic-based photo-voltaic panels, and organic-based integrated circuits During the manufacturing process of the devices, chemicals and deposition materials are applied to the substrate in a vacuum using a point source crucible (A) or a modified point source crucible, typically as shown in FIG. 1. When the chemicals are heated, they are vaporized and emitted from the point light source crucible A through the discharge hole B in the form of a cosine-shaped emission plume. Then, the substrate D is supported at a fixed position such that one plane E faces the point light source crucible A, or is rotated in the emission plume C. A certain amount of vaporized chemical is deposited on one plane E of the substrate D to form one film.

In some cases, modified point light sources may be used to form a non-uniform Gaussian flux distribution. Examples of modified point light sources are R.D. Mathis-type boats, Knudsen cells, and induction furnace sources. However, a general disadvantage of point light source crucibles or modified point light source crucibles lies in their design. The ability to control the evaporation rate of chemicals is related to the precise and precise control of the thermal gradient of the material's temperature and low heat capacities and low heat conductivity. Point light sources / Gaussian material sources typically use radiation reflectors, insulators and baffles that allow metals and salts to have high evaporation rates at high temperatures of 1,000 ° C. to 2,000 ° C. However, these material sources are not suitable for evaporating organic chemicals at low temperatures of 100 ° C to 600 ° C. Excessive heat applied to many organic chemicals requires a vacuum system to flush chemicals from the material source, destroy the film grown on the substrate, and discontinue use to clean and reload it. Another problem is that vaporized chemicals are frequently condensed at the outlet of crucibles of point sources or modified point sources. Condensation of the vaporized chemicals begins to deform or occlude the outlets, which then fall back into the heated interior of the crucible and eject into the substrate. These films destroy the homogeneous distribution of the chemical film because films with spit defects exhibit high surface roughness values and can also exhibit pinhole defects for the entire deposited layers. Let's do it. In addition, light source hole condensation reduces the uniformity of the deposited film by changing the flow jet distribution.

Another disadvantage of point light source and strain point light source crucibles is that no axis of flux uniformity can be found. Point light sources and modified point light source crucibles form relatively uniform films only when the flux angle is kept small. As shown in FIG. 2, the flux angles α, β, γ are measured from the vertical axis N extending from the outlet of the point light source crucible to the outlet of the edge of the cosine-shaped column C shown in FIG. 1. The only way to keep the flux angle low, such as the angle α shown in FIG. 2, is between the point light source crucible A and one plane E of the substrate, such as the substrates indicated by reference numerals D1, D2, and D3, respectively. It is to greatly increase the separation distance or throw distance. For example, in order to completely apply the substrate D2, it is necessary to move to the position of the substrate D3 while keeping the flux angle α constant. This movement increases the reach from TD2 to TD3. Similarly, when the substrate D3 moves to the position of the substrate D1, that is, from the distance TD3 to TD1, only a part of the substrate D3 is applied, and further, the deposited layer falls in uniformity. Film uniformity is a very important feature of organic layers used in photonic or electronic applications such as semiconductor fabricated devices. Therefore, these devices cannot be used properly unless the organic films do not maintain 95% or more uniformity.

Reach for forming 95% or more uniform film can be predicted. For example, to apply this uniformity requirement to a 6-inch square substrate, a reach of about 2.5 feet may be required. In comparison, 24-inch square substrates require a reach of about 9.5 feet. Since the film growth rate is inversely proportional to the square of the distance between the crucible and the substrate, this increase in reach hinders the development of the production process.

The film growth rate of organic materials is typically expressed in Angstroms per second. For example, a 1 foot or less reach is desirable to apply a 12-inch substrate to a thickness of 95% homogeneous film and 1,000 angstroms. With this one foot reach, the chemical vapor deposition rate is 18 angstroms per second, corresponding to a coating time of about 55 seconds. Conversely, with a reach of 9.5 feet, the deposition rate is 2 Angstroms per second, and 1.5 hours is the deposition time.

In addition to the increase in the film growth rate, the increase in the reach also greatly increases the production cost. First, larger vacuum chambers as well as more powerful vacuum pumps are needed because the size of the vacuum chamber must be increased to accommodate the increased reach. Second, because the increased reach reduces the deposition efficiency, expensive chemicals are significantly wasted. Third, since vaporized organics that do not reach the substrate are deposited on the inner wall of the vacuum chamber, the vacuum chamber must be removed from the production facility and cleaned more often. This treatment is expensive because some chemicals, such as those used to produce organic liquid electronic displays, are not only expensive but also toxic. The point is further increased because point source or modified point source crucibles contain only 1 to 10 square centimeters of chemical. Therefore, only a few substrates can be applied before the vacuum chamber returns to the standby state, the vacuum chamber is trimmed, the crucible is refilled, and the vacuum chamber is vacuum again.

Therefore, it is an object of the present invention to manufacture a method and apparatus for applying a substrate in a vacuum that allows the application of a larger substrate without increasing the reach as the width of the substrate increases, thereby making it possible to produce more substrates during the application process. The deposition material is applied, reducing the loading downtime, and reducing the cleaning time.

1 is a side view of a conventional single point source crucible.

FIG. 2 is a side view of the conventional one point light source crucible shown in FIG. 1 with sequentially enlarged substrates located proximate to the crucible.

3 is a cutaway perspective view of a material source according to a first embodiment of the present invention.

4 is a cross-sectional view of the material source shown in FIG. 3.

5 is a longitudinal sectional view of the material source shown in FIG. 3.

FIG. 6 is a top perspective view of an emission plume extending coaxially along substantially longitudinal components of the material source shown in FIGS.

FIG. 7 is a top view illustrating a state in which two material sources shown in FIG. 5 are disposed in a vacuum chamber.

8 is a cross-sectional view illustrating a state in which four material sources illustrated in FIGS. 5 to 7 are disposed at offset angles in a vacuum chamber.

9 is a top view of a plurality of material sources according to a second embodiment of the present invention.

10 is a perspective view of a material source according to a third embodiment of the present invention.

11 is a perspective view of a first conduit having a resistive heating element positioned proximate its outer surface.

12 is a cross-sectional view of the first conduit and the second conduit disposed in the first conduit shown in FIGS. 10 and 11.

FIG. 13 is a longitudinal sectional view of a material source according to the third embodiment of the present invention shown in FIG.

To solve the problems associated with the prior arts, the present invention includes a vacuum deposition system for applying a substrate with a deposition material. The vacuum deposition system of the present invention includes a vacuum chamber and a material source disposed inside the vacuum chamber. The material source has a substantially longitudinal discharge element and defines an interior cavity and an outlet fluidly connected to the interior cavity and has a body extending along the longitudinal axis. The heat source is disposed in close proximity to the body of the material source.

A substrate having a width measured parallel to the longitudinal axis of the body is placed inside the vacuum chamber, and as the width of the substrate increases, the distance measured between one side of the substrate and the outlet is kept constant. Preferably, the substantially longitudinal element of the body of the material source is equal to or less than the width of the substrate.

The material source may comprise a ten-trough shaped body having a pair of longitudinally extending endwalls and a pair of transverse walls, the longitudinal and transverse walls defining the interior cavity of the body. The body of the material source defines a top and a bottom disposed close to the outlet, and the heat source is a heating coil having a plurality of heating elements disposed at the top of the body rather than the bottom of the body. The outlet may extend continuously along the substantially longitudinal outlet element of the body and the ribs may be located in an interior cavity defined by the body of the material source.

The material source may further comprise a first conduit defining an inner cavity and a first outlet fluidly connected to the inner cavity, and the body may be a second conduit received in the inner cavity of the first conduit. The first outlet defined by the first conduit is arranged with the outlet defined by the second conduit, or the first outlet defined by the first conduit is inconsistent with the outlet defined by the second conduit Can be arranged as.

Regardless of the type of body, a process control device can be connected to the body of the material source.

To apply a substrate using a material source and a vacuum chamber:

a. Disposing a material source in the vacuum chamber having a body extending along the longitudinal axis, the body having a substantially longitudinal discharge element and defining an outlet that is fluidly connected to the inner cavity;

b. Placing the substrate in the vacuum chamber facing the outlet defined by the body of the material source;

c. Loading the deposition material into an interior cavity defined by the body of the material source;

d. Vacuuming the vacuum chamber to form a vacuum state;

e. Heating the deposition material in the interior cavity of the body of material source;

f. Discharging the vaporized deposition material along the substantially longitudinal element of the body; And

g. Moving the substrate through the vaporized deposition material.

The substrate can be moved at a constant rate through the vaporized deposition material. Once the application of the substrate is complete, the substrates are moved to another process, or the vacuum chamber is opened, the applied substrates are removed, new substrates are added, and the vacuum chamber is again vacuumed, the process described above. Repeat them.

One type of material source used to apply a deposition material to the surface of a substrate in a vacuum is a point light source crucible and a variant crucible or a combination thereof, each of which comprises at least one fluidly connected to the inner cavity and the inner cavity. Two bodies defining an outlet, and heating elements disposed proximate each of the two bodies. The two bodies are arranged along a common longitudinal axis to form one substantially longitudinal discharge element. The process control device may be connected to one of the two bodies of the material source, wherein the interior cavities of the two bodies are formed to receive a deposition material selected from the group consisting of organic chemicals and organic compounds.

Another type of material source used to apply deposition material to the surface of a substrate in a vacuum state extends along the longitudinal axis, has a substantially longitudinal discharge element, and flows fluidly into the inner cavity and the inner cavity. A body defining an outlet to be connected, and a heat source disposed proximate the body of the material source. The outlet can extend continuously along the substantially longitudinal discharge element of the body, and the ribs can be located in an interior cavity defined by the body of the material source. The source of material includes a body in the form of an elongated trough with a pair of longitudinally extending longitudinal walls and a pair of transverse walls, the longitudinal walls and the transverse walls defining the interior cavity of the body.

The material source may also further comprise a first conduit defining an interior cavity and a first outlet fluidly connected to the interior cavity, wherein the body is a second conduit received in the interior cavity of the first conduit. The heat source is disposed proximate the first conduit or the second conduit and includes a first layer of thermally conductive electrical insulator, a second layer of conductive material, and a third layer of thermally conductive electrical insulator. The first outlet defined by the first conduit may be arranged in a configuration which is arranged with the outlet defined by the second conduit or which is inconsistent with the outlet defined by the second conduit.

3 to 8 show a first embodiment of a material source according to the invention. FIG. 3 illustrates a source crucible 12 type of material 10 for evaporating deposition materials 14, such as organic chemicals, organic compounds, or other suitable materials. The trough crucible 12 includes a body 16 with an open top extending about the longitudinal axis L. As shown in FIGS. 3 and 6, the body 16 consists of a pair of opposing end walls 18, a pair of opposing transverse walls 20, and a base 22, with all components They are formed integrally. As shown in FIG. 3, the end wall 18 and the transverse wall 20 preferably have the same width. However, as shown in FIG. 7, the end wall 18 preferably has a length SL longer than the length EL of the transverse wall 20. Since the end wall 18 extends to a length SL longer than the length EL of the transverse wall 20, the body 16 has a substantially longitudinal component and cross length substantially similar to the end length SL. It is almost the same as (EL) and has a transverse component smaller than the longitudinal component. Also, as shown in FIG. 7, as in the use of a 15-inch long endwall 18 for applying a 12-inch square substrate 24, the endwall 18 of the trough crucible 12 is intended to be applied. It is preferable that it is longer than the board | substrate 24 to make.

3 and 4, the longitudinal wall 18, the transverse wall 20, and the bottom surface 22 of the body 16 define an interior cavity 26 and an outlet hole 27. In addition, the underside 22 of the body 16 as shown in FIGS. 5 and 7 is located proximate to the interior cavity 26 and the first side 30 of the underside and preferably the termination wall 18. The ribs 28 formed therebetween are defined. To assist in aiming the vertical flux of the trough crucible 12 and loading the deposition material 14 into the trough crucible 12, the ribs 28 are integral to the body 16 by methods such as machining. Is formed. As shown in FIGS. 6 and 6, the entire trough crucible 12 rotates slightly around the axis L2 even when the deposition material 14 is loaded at a desired load of about 50 square centimeters to 100 square centimeters. 28 holds a deposition material 14, such as an organic material. Body 16 and rib 28 are formed from a heat conducting material, preferably a material that forms a uniform heat distribution. Ceramic is preferred. However, metals or other suitable materials may also be used. Various application methods are applied to the body 16 to enhance the durability and performance of the body 16.

As shown in FIG. 8, the trough crucible 12 may rotate slightly around the longitudinal axis L. FIG. Thanks to this structure, a plurality of trough crucibles 12, each loaded with different deposition materials 14, such as organic chemicals, are formed so that vaporized chemicals can be released along the normal deposition axis 32. do. Different vapor deposition materials 14 may be mixed in the mixing zone 34 and distributed more evenly to the substrate 24. An opening 36 may be formed to introduce the deposition materials 14 into the mixing zone 34 and to restrict the passage of the deposition materials 14 to the substrate 14.

As shown in FIGS. 3-4 and 7-8, the heating bodies 38 are arranged in the body 16, preferably close to the outer surface of the end wall 18. If the heating bodies 38 are more concentrated, the heating elements 38 are arranged close to the upper edge 40 of each end wall 18 proximate the outlet 27. The concentrated arrangement of heaters 38 proximate the outlet 27 of each end wall 18 helps to prevent recrystallization of the vapor deposition materials 14. Similarly, by introducing a vertical temperature gradient with a low temperature to the underside 22 of the trough crucible 12, spitting from the eruption that occurs near the underside 22 is reduced. The heating bodies 38 are preferably surface mounted, but may be inserted or disposed in close proximity to the termination wall 18. Alternatively, heat may be supplied by a heating lamp (not shown), a heating body 38 positioned a certain distance away from the termination wall 18 of the trough crucible 12, or induction.

As shown in FIG. 3, the power supply leads 42 are connected to the heating elements 38. A thermocouple temperature sensing probe 44 is disposed in close proximity to the trough crucible 12, preferably the base 22. The thermocouple temperature sensing probe 44 is connected to a sensing device and another process control device 45 that regulates the application process.

By proper power control, the temperature of the deposition materials 14 can be tilted to preset values. By appropriate deposition material 14 emission monitoring, such as quartz crystal microbalance, the deposition material 14 can be adjusted to a predetermined deposition rate or emission rate. With the use of higher performance power controllers and crystal sensors, preprogrammed thermal routines can be set for degassing, and the vacuum is a trough crucible type 12 material. A load of deposition material 14 may be prepared for faster turnaround of the circle 10.

In a second embodiment of the present invention as shown in FIG. 9, the material source 10 ′ is a plurality of point light source crucibles 46 arranged along the longitudinal axis L ′ in a linear arrangement within the vacuum chamber 48. To form a substantially longitudinal discharge element that is approximately equal to the total length LA of the linear arrangement. Similar to the material source 10 of the first embodiment, the second embodiment provides a material source 10 'having a substantially longitudinal discharge element that is larger than the transverse component of the material source. Each point light source crucible 46 has a body 16 'forming an outlet 27', a heating body 38 ', a power supply lead 42', and a thermocouple temperature sensing probe 44 '. The linear arrangement pattern can largely mimic the linear output of the trough crucible 12 shown in FIGS. 3-8, which is useful for applying substrates 24 having a width W2 of several inches or more. However, the benefits include a number of requirements for power supply, temperature display, crystal head, feedback, and control loop, separate from spitting. Softened by known defects.

A material source 10 ″ according to a third embodiment of the invention is shown in FIGS. 10-13. As shown in FIG. 10, the material source 10 ″ of the third embodiment is a substantially hollow portion partially applied by the first conduit 56 or an optional heat shield 94. Other structures. The first conduit 56 has two mutually opposite ends 58, 60 defining at least one outlet 27 ″. The first conduit 56 is supported by hardware attached to a post 62 or similar fixed support or base 64. As shown in FIG. 11, a resistance heater 74, such as a grid pattern, is disposed proximate to the outer surface 76 of the first conduit 56.

As shown in FIG. 12, another structure defining an inner cavity fluidly connected to the second conduit 66 or outlet is provided in the inner cavity 68 defined by the first conduit 56. Settles down. A second inner cavity 70 is defined that fluidly connects a second conduit 66 to a second outlet 27 '' 'to receive a deposition material 14, such as an organic or other chemical. The first conduit 56 and the second conduit 66 are formed of ceramic or other suitable material. The central axis C1 of the first conduit 56 may be aligned or eccentric with the central axis C2 of the second conduit 66. The second outlet 27 '' 'is arranged with the outlet 27' 'defined by the first conduit 56, or the outlets 27' ', 27' '' are arranged in the second conduit 66 And an outlet defined by the first conduit 56 and the second conduit 66 which do not indicate a line of sight path SP between the deposition material 14 received by the substrate 24 It may be arranged in a mismatched arrangement having (27 '', 27 '' '). To aid in the arrangement of the first conduit 56 and the second conduit 66, optional fixed rods 72 of quartz or other suitable material are placed between the opposing ends 58, 60 of the first conduit 56. May extend to. For the discharge of multiple chemicals, a second conduit 66 may additionally be received in the first conduit 56.

Fig. 13 shows in detail the third embodiment of the present invention in which the grid-type resistive heating body 74 is replaced by another resistive heating body 74 '. The resistive heating body 74 'includes a first layer 78 made of a thermally conductive electrical insulator such as aluminum, a second resistive layer 80 made of NiCr or other suitable conductive material, and a third layer 78 made of a thermally conductive electrical insulator. Include '). As described above, the heat shield 94 and the insulation button 96 may be disposed in proximity to the third layer made of the thermally conductive electrical insulator.

Referring to FIG. 13, the first and second conduits 56, 66 are co-located. One end 58 of the opposite ends of the first conduit 56 is detachably attached to an end 84 of the second conduit 66 that is detachably attached to the second conduit 66. A rod 88 surrounded by bushings 90 extends through one end 58 of the first conduit 56 and one end 84 of the corresponding second conduit 66. A rod 88 surrounded by bushings 90 ′ extends through the other end 60 of the first conduit 56 and the other end 86 of the corresponding second conduit 66. . The second rod 88 ′ is supported by a notched support arm 92 connected to the base 64. The heat shield 92 and the insulation button 94 used to place the heat shield 92 have already been described.

At least one electrode 98 extends through the bottom 64 of the material source 10 '' of the third embodiment and is electrically from the bottom 64 by an insulating material 100, such as a ceramic or other suitable material. Insulated. The electrode 98 is connected to the resistance heater 74 ″ by the power supply lead 42. Electrical contact clamps 102 detachably attach first conduit 56 to electrode 98.

A material source according to any one embodiment of the present invention can be used to apply the substrate 24. Preference is given to material sources 10, 10 ″ having trough crucibles 12 or cavity conduits 56 ″. For clarity, only the first embodiment is described below.

As shown in FIGS. 7 and 8, the application process begins with placing the deposition material 14 in the material source 10, thereby removing one or more material sources 10 or more substrates 24. It is located in the vacuum chamber 48. The material sources 10 should be positioned parallel to each other. Here, the substrate axis 50 of each substrate 24 is located approximately perpendicular to the longitudinal axis L of the parallel material sources 10.

Degassing the material source 10, the vacuum chamber 48, and the desired amount of deposition material 14 is optionally added. For example, the loading of the deposition material 14 into the trough crucible 12 is generally between 70 square centimeters and 100 square centimeters, but may increase or decrease depending on the size of the material source 10.

The next step is to vacuum the vacuum chamber 48 to the desired vacuum pressure, preferably 1 × 10 ^(-3) Torr, typically 9 × 10 ^(-6) Torr or other suitable vacuum pressure. . Once a suitable vacuum has been established, the next step is to deposit the vapor deposited material 14 into the one or more material sources 10 until the vaporized and released vapor 52 of vaporized vapor deposited material 14. (14) is heated. Once vaporization begins, the next step is to move the substrate 24 at a constant speed v through the linear form 52, as shown in FIG. 7 or 8. Generally, film deposition characteristics are a growth rate of at least 10 angstroms per second with film uniformity greater than 90%. The substrate 24 may be moved by a suitable moving device, preferably with an overhead conveyor (not shown).

In the mechanism of the material source 10 '' according to the third embodiment of the present invention, the deposition material 14 is loaded into the second conduit 66, and radiant heat from the inner surface 82 of the first conduit 56. Heated by radioactive heat transfer. The deposition material 14 is vaporized to pass through an outlet or opening 27 '' defined by the second conduit 66 and an outlet 27 '' 'or opening defined by the first conduit 56 Head to the vacuum chamber 48. The outlet 27 '' 'defined by the second conduit 66 coincides with, or is formed by, the outlet 27' '', 27 '' defined by the first and second conduits 56, 66. The outlets 27 '' ', 27' 'of the first and second conduits 56, 66 are mismatched such that they do not exhibit a line of visible path SP between the deposition material 14 and the substrate 24. Can be arranged.

As shown in FIGS. 7 and 8 but as is generally applied to all embodiments of the present invention, the linear design of the material source 10 allows the substrate 24 to have a floe 52 of the vaporization deposition material 14. As they pass through, they help to ensure film uniformity to the edge 54 of the substrate 24. However, when the trough crucible 12 or the cavity conduit type material source 10 is used, the longitudinal wall 18 or the conduit in the longitudinal direction SL is formed longer than the width W2 of the substrate 24. By this, the film uniformity is best achieved. This is due to the reduction in the number of integrated Gaussian flux discharge angles used to support the emission from the transverse wall 20 of the material source 10. The use of various outlet or aperture dimensions can be used to offset this effect and to make the release more uniform with respect to the release of the material source.

The present invention allows large substrates 24 to be applied with the deposition material 14. This result is achieved while reducing the waste of deposition material 14, exposure to potentially hazardous materials, the need for a larger vacuum chamber 48, application time, and the cost of the application process. Since the present invention provides a generally linear vaporized plume for longitudinal components of a material source longer than the one produced by a point source or a modified point source, the point light source or cosine distribution plots associated therewith The nonuniformity observed in N is eliminated or significantly reduced. Moreover, rather than increasing the reach to several feet to achieve a level of uniformity of 95%, the reach can be less than one foot, regardless of the size of the surface area of the side of the substrate being applied.

Another feature of the present invention is that the majority of Gaussian exit angles can be used for deposition of a material source or substrates passing through the material sources at a constant rate. This greatly increases the percentage of chemicals deposited directly on the substrate, rather than unnecessarily applying the inner surface of the vacuum chamber. This reduces downtime and significantly reduces the cost of organic chemicals for each substrate to be applied. The benefit obtained in this regard is that because the material source has a longer longitudinal structure than the single point or modified point light source, more chemicals can be loaded into the material source, thereby reducing downtime to commercial use. It allows the light source to apply more substrates between refill periods of material source.

The present invention described above is not limited by the above-described embodiment and the accompanying drawings, but by the appended claims. Therefore, it will be apparent to those skilled in the art that various forms of substitution, modification, and alteration are possible without departing from the technical spirit of the present invention described in the claims.

Flexibility is also improved because the material source has standard feedthroughs and power connections. Any system can be reconnected to the material source at that location as long as it is a vacuum system that can accommodate linear sputter material sources. Vacuum systems connected to 6-inch to 12-inch circular sputter material sources can further accommodate material sources of the same or similar size. Therefore, it is possible to reduce the need for new vacuum systems to be manufactured in order to obtain the organic deposition capability of the present invention. In addition, the material sources may be arranged in banks or in arrays within a limited chamber size. Several material sources can be prepared in a vacuum system so that when one material source runs out of deposition material, the next material source is used. Moreover, because of the low thermal gradients and crucible operating temperatures, the spitting of the material substantially occurs from the trough crucible type or conduit type material source.

Claims (49)

An evacuated vacuum chamber; (i) a body extending substantially along the longitudinal axis, defining an interior cavity and having a bottom, and having at least one substantially longitudinal outlet fluidly connected to the interior cavity; (Ii) disposed spaced apart from its inner wall in the body, extending in an axis substantially parallel to the longitudinal axis of the body and having at least one substantially longitudinal outlet, and conformal electrical on its outer surface A circuit comprising a heating body comprising an alternating layer of electrically insulating dielectric material and electrically conductive metal material; (Iii) a deposition material disposed in the heating body and having at least one of low temperature evaporation characteristics and sublimation characteristics; And (Iii) a material source comprising a temperature sensing probe configured to contact at least one of direct and indirect contact with the deposition material and to measure the temperature of the deposition material; A power supply electrically connected to the metallic material of the heating body; And Adjust the power supply to achieve a desired vapor emission rate, the adjustment comprising an intelligent controller based on feedback from at least one of a temperature sensing probe and an emission monitor, Wherein the deposition material is heated by a heating body, and the deposition material is discharged to the substrate through an outlet of the heating body and an outlet of the body, thereby forming a coating. A system for vacuum deposition of material onto the surface of a substrate. The system of claim 1, wherein the substrate has a width measured parallel to the longitudinal axis of the body, and as the width of the substrate increases, the distance measured between one side of the substrate and the outlet is kept constant. 2. The system of claim 1, wherein the substrate has a width measured parallel to the longitudinal axis of the body, wherein the substantially longitudinal element of the body of the material source is equal to the width of the substrate. delete delete The system of claim 1 wherein the deposition material is an organic chemical compound. delete delete delete delete delete delete delete delete delete (a) has a base and extends along the longitudinal axis, has a substantially longitudinal discharge element, defines an interior cavity, has an outlet fluidly connected to the interior cavity, and has an upper end disposed adjacent to the outlet Disposing a material source having a body in a vacuum chamber; (b) placing the substrate in the vacuum chamber facing the material source outlet; (c) loading the deposition material into the interior cavity of the body of the material source via a removable access port disposed at the axial end of the material source; (d) vacuuming the vacuum chamber to form a vacuum; (e) heating the deposition material in the interior cavity of the body along the longitudinal axis of the body such that the temperature of the deposition material is sufficient for volatile and contaminant gas removal and less than at least one of the evaporation and sublimation thresholds of the deposition material; (f) heating through a powered heat source and volatilizing the deposition material; (g) discharging the vaporized deposition material from the outlet of the body at a constant discharge rate; (h) controlling the discharge rate by controlling the power supplied to the heat source; And (i) moving the substrate through the vaporized deposition material at a rate proportional to the discharge rate, thereby providing a desired coating thickness, The deposition material is heated by a heating body comprising a conformal electrical resistance circuit on the outer surface of the heating body, A method of coating a substrate using a material source and a vacuum chamber. 17. The method of claim 16, wherein the substrate moves at a constant rate through the vaporized deposition material. A body having a bottom surface and extending substantially along the longitudinal axis, the body having at least one substantially longitudinal outlet port defining an interior cavity and fluidly connected to the interior cavity; A heating body disposed spaced from its inner wall in the body and extending in an axis substantially parallel to the longitudinal axis of the body and having at least one substantially longitudinal outlet; A deposition material disposed in the heating body and having at least one of low temperature evaporation characteristics and sublimation characteristics; And A temperature sensing probe configured to contact at least one of direct and indirect contact with the deposition material and configured to measure the temperature of the deposition material, The heating body comprises a conformal electrical resistance circuit on the outer surface of the heating body and at least one electrical connection for powering the electrical circuit, The body and the body of the heating element is rotatable with respect to each other, characterized in that the outlet of the body is non-alignable with the outlet of the heating element, A source of material for vacuum deposition of deposition material onto the surface of a substrate. delete delete 19. The material source of claim 18, further comprising a process control device in communication with at least one of the body of the material source and the body of the heating element. 19. The material source of claim 18, wherein the deposition material is an organic chemical compound. The system of claim 1, wherein the intelligent controller communicates with and receives feedback from the temperature sensing probe. The system of claim 1, wherein the temperature sensing probe is a thermocouple. 25. The system of claim 24, wherein the thermocouple is a "K" type thermocouple. The system of claim 1, wherein the temperature sensing probe is a resistance temperature detector. The system of claim 1, wherein the adjustment is based on feedback from the emission monitor, wherein the emission monitor is configured to measure the rate of vaporized material flux. 28. The system of claim 27, wherein the intelligent controller communicates with and receives feedback from the emission monitor. 28. The system of claim 27, wherein the emission monitor is quartz crystal microbalance. The system of claim 1, further comprising a substrate transport mechanism configured to move the substrate through the vapor flux at a constant rate. The system of claim 1, further comprising at least one removable end cap disposed adjacent the axial end of the body of material source. The system of claim 1, wherein the heating body is configured to have a concentration of heat capacity adjacent to the longitudinal outlet to produce a vertical temperature gradient through at least one of the heating body and the deposition material. The system of claim 1, wherein the dielectric material is at least one of alumina, glass, and ceramic. The system of claim 1, wherein the metal material is at least one of molybdenum, nickel, nickel-chromium, titanium, tungsten, and iron-chromium-aluminum. The system of claim 1 wherein the electrical circuit of the heating body is inserted into the heating body. The system of claim 1, wherein the deposition material exhibits at least one of an evaporation and sublimation threshold between about 100 ° C. and about 600 ° C. 7. The system of claim 1, further comprising a crucible having a body substantially surrounding the deposition material and having at least one outlet. 38. The system of claim 37, wherein the outlet of the crucible comprises a plurality of outlets that are variable in size and configured in relation to the outlet of the heating element and the outlet of the body of material to produce a desired discharge flux profile. . 38. The system of claim 37, wherein the outlet of the crucible comprises a plurality of outlets that are variable in intervals and configured in relation to the outlet of the heating body and the outlet of the body of material to produce a desired exhaust flux profile. . 17. The method of claim 16, further comprising discharging the deposition material from the interior cavity of the body. 17. The method of claim 16, further comprising repeating steps (b) through (i) with at least one of the deposition material and the following deposition material. 19. The material source of claim 18, wherein the temperature sensing probe is in direct contact with the deposition material and measures the temperature of the deposition material. 19. The material of claim 18, wherein the temperature sensing probe indirectly measures the temperature of the deposition material by contact with one of a heating body, a body of material source, and a crucible having a body substantially surrounding the deposition material. won. 19. The material source of claim 18, further comprising a crucible having a body substantially surrounding the deposition material and having at least one outlet. 45. The material of claim 44, wherein the outlet of the crucible comprises a plurality of outlets that are variable in size and configured in relation to the outlet of the heating element and the outlet of the body of the material source to produce a desired discharge flux profile. won. 45. The material of claim 44, wherein the outlet of the crucible comprises a plurality of outlets that are variable in intervals and configured in relation to the outlet of the heating body and the outlet of the body of material to produce a desired discharge flux profile. won. 19. The material source of claim 18, wherein the deposition material exhibits at least one of an evaporation and sublimation threshold between about 100 ° C and about 600 ° C. 19. The material source of claim 18, further comprising at least one removable end cap disposed at an axial end of the body of the material source to provide entry and exit of the deposition material. 19. The material source of claim 18, wherein the heating element comprises a high concentration of heat capacity adjacent to the top of the heating element, thereby providing a vertical temperature gradient in the heating element.