CN1175126C - Method and apparatus for coating substrate in vacuum - Google Patents
Method and apparatus for coating substrate in vacuum Download PDFInfo
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- CN1175126C CN1175126C CNB00816326XA CN00816326A CN1175126C CN 1175126 C CN1175126 C CN 1175126C CN B00816326X A CNB00816326X A CN B00816326XA CN 00816326 A CN00816326 A CN 00816326A CN 1175126 C CN1175126 C CN 1175126C
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- material source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A method and apparatus for coating a substrate with a deposition material in a vacuum wherein a material source having a substantially longitudinal deposition emission component is used to create a substantially longitudinal material deposition emission plume which coats the surface of the substrate without increasing the throw distance between the substrate and the material source.
Description
(1) technical field
The present invention relates to coated materials, relate in particular to a kind of in a vacuum to the method and apparatus of substrate coating deposition material.
(2) background technology
Method to substrate coating deposition material generally includes hydatogenesis material in a vacuum, and the deposition material of evaporation is condensed in the substrate under than the low temperature of the temperature of the deposition material that evaporates.
In the production of organic radical device, thin, substrate flat, film like applies normally organic radical chemical coating in its at least one side.Base material can be glass or plastics/polymer material, although two dimensional structure normally also can be made of surface bending or nonplanar.Substrate applies size and generally is limited in several square inches owing to the restriction of the technical capacity of present material source.
When the most of organic radical device of making such as organic radical light-emitting diode display, organic radical laser apparatus, organic radical photoelectricity panel and organic radical unicircuit, with as shown in Figure 1 point source crucible (point sourcecrucible) A or the point source crucible of correction chemical or deposition material are put on substrate in a vacuum usually.When chemical was heated, the chemical evaporation was also distributed plume C with common cosine shape and is left point source crucible A through the outlet beta radiation.Normally substrate D is remained on a fixed position then or the flat side E of substrate D is rotated in distributing plume C in the face of point source crucible A.A certain amount of evaporation chemical is deposited on the flat side E of substrate D, forms film coating.
In some applications, produce Gauss's (uneven) Flux Distribution with the point source of revising.The example of the point source of revising comprises R.D.Mathis type ship, Knudsen unit or induction furnace source.But the general defective of the point source crucible of point source or correction is in their design.At first, the ability of velocity of evaporation of control chemical comprises low heat capacity and relatively poor material temperature and the thermograde of thermal conductivity is carried out responsive, accurate control.Point source/Gauss's material source uses radiation tamper, insulation and obstacle usually, with 1, and 000-2,000 ℃ high temperature is to metal and the good velocity of evaporation of salt formation.But these material sources are inappropriate for evaporating the organic radical chemical at 100-600 ℃ of lesser temps.The undue heat that puts on many organic radical chemical can make chemical splash the outside of material source, thereby has destroyed any film that is just generating in substrate, and need stop using vacuum system so that clean and reload.Another problem is the outlet of the chemical point source crucible that condenses in again and again a little or revise of evaporation.The condensing of evaporation chemical begin to change or or stop up outlet, make chemical fall back to the heated inside of crucible, and splash in the substrate.This splash destroys the homogenous distribution of chemical film, because it is higher to have the roughness of film value of splash defective, makes whole settled layer have needle pore defect.Source outlet condensation is also distributed the homogeneity that distribution has reduced deposit film by having changed flux.
Another shortcoming of the point source crucible of point source and correction is not have the equally distributed axis of flux.The point source crucible of point source and correction has only that hour ability produces film quite uniformly when flux angle (flux angle) keeps.As shown in Figure 2, flux angle α, β and γ are metered into line L1, L2 and L3, the edge of cosine-shaped plume C in these line representative graphs 1 by the normal direction axis N that extends from the outlet of point source crucible.The unique channel that keeps the less angle [alpha] for example shown in Figure 2 of flux angle is to increase point source crucible A greatly and such as separating distance between the flat side E of those substrates of representing with mark D1, D2 and D3 or jet length (throw distance).For example, the distance that substrate D2 need move to substrate D3 just can be applied fully, keeps flux angle α constant simultaneously.A kind of like this jet length that will form from TD2 to TD3 that moves.Similarly, if substrate D3 moves to the position of substrate D1, promptly from TD3 to TD1, then have only the small portion of substrate D3 coated, deposited coatings is seldom even.Film equality is a very important feature that is used for the organic layer of photon and electronic application, because if the organic radical uniformity of film can not remain on 95% or higher, the device of manufacturing is with cisco unity malfunction.
In order to obtain 95% or higher uniform thin film, can estimate jet length.If this even requirement is applied to 6 inches square base for example, need a pact so
The jet length of foot.As a comparison, one 24 inches square base need
The jet length of foot.The increase of this jet length has destroyed the ability of the process of developping production, because the square distance between film growth rate and crucible and the substrate is inversely proportional to.
The film growth rate of organic radical material is usually being dust/second unit representation.For example, to 12 inches substrates apply 95% uniform thin film, to apply 1000 dusts thick, then one foot or littler jet length are more satisfactory.One foot jet length, typical electroless plating rate is per second 18 dusts, is equivalent to about 55 seconds coating time.Otherwise,
The jet length of foot causes
Hour depositing time.
Except increasing film growth rate, increase jet length, then significantly increase production cost.At first, vacuum chamber must need bigger vacuum deposition chamber and more powerful vacuum pump even as big as holding the jet length of increase.The second, expensive chemical has very big waste, because the increase of jet length has reduced sedimentation effect.The 3rd, because the organic materials of the no show substrate of evaporation is deposited on the inwall of vacuum chamber, vacuum chamber must take out from production operation more continually and clean.Cleaning is expensive, because be deleterious and expensive such as some chemical that are used to produce the organic liquid electronic console.Because point or correction point source crucible only keep the chemical between 1 to 10 cubic centimetre, cost is further enlarged again.Therefore, can only have a small amount of substrate to apply at every turn, then vacuum chamber must by be linked atmosphere, to vacuum chamber clean, crucible is feeded again and vacuum chamber is found time again.
Therefore, an object of the present invention is to provide the method and apparatus of coated substrate in a vacuum, when the width of substrate increases, allow bigger substrate under the situation that does not increase jet length, to apply, in coating procedure, allow more deposition material to be deposited in the substrate, reduce reinforced stoppage time and reduce cleaning time.
Brief summary of the invention
In order to help to solve the problem relevant, the vacuum deposition system that comprises pair of substrates coating deposition material that the present invention is total with prior art.Vacuum deposition system comprises that a vacuum chamber and is positioned at the material source of vacuum chamber.Material source has a body, and this body longitudinally axis extends, and has one and distributes member substantially longitudinally, thereby constitute an inner chamber and a fluid is connected in the outlet, of this inner chamber near a localized upper end of described outlet and a base portion; An and thermal source, longitudinal axis along described body is located near the body of material source, wherein thermal source produces a vertical temperature gradient in material source, and the upper end of the metering of this vertical temperature gradient from the base portion of material source to material source makes that the temperature of base portion of material source is lower than the upper end of material source.
One that will apply, its width is parallel to the substrate that the body longitudinal axis measures and can be placed in the vacuum chamber, and wherein the jet length of measurement remains unchanged with the increase of base widths between a side of substrate and outlet.Preferably, the basic longitudinal component of material source body equals the width of substrate or less than base widths.
Deposition material is added in the inner chamber of material source body.From the material group that comprises organic radical chemical and organic radical compound, select deposition material.Deposition material is heated by thermal source, and ejects by the outlet of substantially vertically distributing member along the material source body.
Material source can have the body of an open trough-shape, and body has the sidewall and the pair of end walls of two longitudinal extensions, and wherein the sidewall of longitudinal extension and end wall have constituted the inner chamber of body.The body of material source can further constitute near outlet localized upper end and a base portion, and thermal source is a heater coil, the quantity of heating unit that is positioned at the body upper end big than in body base.Outlet can be extended continuously along the member that substantially vertically distributes of body, and some prominent ribs are arranged in the inner chamber that is made of the material source body.
Material source also can have one first pipeline, and this pipeline constitutes first outlet that an inner chamber and a fluid are connected in inner chamber, and wherein body is one to be contained in second pipeline in first inner cavity of pipe.Can align with the outlet that constitutes by second pipeline by first outlet that first pipeline constitutes, or, align with the outlet that constitutes by second pipeline with non-coincidence structure by first outlet that first pipeline constitutes.No matter body types how, a process controller is connected in the body of material source.
A method with a material source and a vacuum chamber coated substrate comprises the steps:
A. material source is positioned in the vacuum chamber, material source has the body that extends of axis longitudinally, and body has one and distributes member substantially longitudinally and constitute an inner chamber and a fluid is connected in the outlet, of inner chamber near a localized upper end of described outlet and a base portion;
B. a substrate is positioned in the vacuum chamber, relative with the outlet that constitutes by the material source body;
C. deposition material is added in the inner chamber that constitutes by the material source body;
D. find time vacuum chamber to form vacuum;
E. with longitudinal axis heating the deposition material in the inner chamber of body of thermal source along described body, wherein thermal source produces a vertical temperature gradient in material source, the upper end of the metering of this vertical temperature gradient from the base portion of material source to material source makes that the temperature of base portion of material source is lower than the upper end of material source;
F. Zheng Fa deposition material sprays along constituting substantially longitudinally of body; And
G. mobile substrate is by the deposition material of evaporation.
Substrate moves through the deposition material of evaporation with constant speed.When the substrate coating was finished, substrate moved to another operation, or opens vacuum chamber, takes out the substrate that has applied, puts into new substrate, and the emptying vacuum chamber repeats above-mentioned step then again.
Be used for that deposition material is coated in a vacuum-deposited class material source on the substrate surface and comprise two bodies revising point source crucible or combination such as a point source crucible,, each body constitutes the outlet that an inner chamber and at least one fluid are connected in inner chamber, one heating unit is placed near each body and along the length of each body and extends, wherein two bodies distribute member along a public longitudinal axis alignment substantially longitudinally to form one, are alignd with non-coincidence structure by each outlet that described each body constitutes.
One process controller is connected in one of two bodies of material source, and the inner chamber of two bodies is configured to hold the deposition material of selecting from the material group that comprises an organic radical chemical and an organic radical compound.
Be used for deposition material is coated in that vacuum-deposited another kind of material source comprises a body on the substrate surface, this body extends along a longitudinal axis, have one and distribute member substantially longitudinally, and constituting the outlet that an inner chamber and at least one fluid are connected in inner chamber, a heating source is placed near the body of material source.Outlet can be extended continuously along the member that substantially vertically distributes of body, and some prominent ribs are arranged in the inner chamber that is made of the material source body.Material source can have the body of an open trough-shape, and body has the sidewall and the pair of end walls of two longitudinal extensions, and wherein the sidewall of longitudinal extension and end wall have constituted the inner chamber of body.
Material source also can comprise one first pipeline, and this pipeline constitutes first outlet that an inner chamber and a fluid are connected in inner chamber, and wherein body is one to be contained in second pipeline in first inner cavity of pipe.Thermal source is placed near first pipeline or second pipeline, and thermal source comprises the first layer of thermal conduction electrical isolation, the second layer of conductive material and the 3rd layer of thermal conduction electrical isolation.Can align with the outlet that constitutes by second pipeline by first outlet that first pipeline constitutes, or, align with the outlet that constitutes by second pipeline with incomparable inconsistent structure by first outlet that first pipeline constitutes.
These and other advantage of the present invention can be clearer in the detailed description of the preferred embodiment that is associated with accompanying drawing, and numbering identical in all accompanying drawings is represented components identical.
Brief Description Of Drawings
Fig. 1 is the side-view of the single point source crucible of prior art;
Fig. 2 is the side-view of the single point source crucible of prior art shown in Figure 1, and putting near crucible has the substrate that increases one by one;
Fig. 3 is the stereographic map of cutting open of the material source of one embodiment of the invention;
Fig. 4 is the end view of cutting open of material source shown in Figure 3;
Fig. 5 is the side-view of cutting open of the material source shown in Fig. 3 and 4;
Fig. 6 is along the axially extended top perspective view that distributes plume of the basic longitudinal component of the material source shown in Fig. 3-5;
Fig. 7 is that two material sources shown in Figure 5 are positioned at the vertical view in the vacuum chamber;
To be four material sources shown in Fig. 5-7 be positioned at side-view in the vacuum chamber with angle of deviation to Fig. 8;
Fig. 9 is the vertical view of a plurality of material sources of second embodiment of the invention;
Figure 10 is the stereographic map of the material source of third embodiment of the invention;
Figure 11 is the stereographic map with first pipeline of a resistance heating element, and this element is located at the outside surface that adjoins first pipeline;
Figure 12 is first pipeline shown in Figure 10-11 and the end view of cutting open that is positioned at second pipeline in first pipeline; And
Figure 13 is the side-view of cutting open of the 3rd material source shown in Figure 10.
The detailed description of preferred embodiment
Fig. 3-6 illustrates an embodiment of material source 10 of the present invention.Fig. 3 illustrates the material source 10 of a flute profile crucible 12 types, is used for hydatogenesis material 14, such as organic chemicals or organic compound or other suitable material.Flute profile crucible 12 is total comprises the body 16 that extends around longitudinal axes L of an elongated open-top.Shown in Fig. 3 and 6, body 16 preferably includes relative longitudinal side wall 18, a relative end wall 20 and a base portion 22, and they form holistic structure together.Sidewall 18 preferably has identical width W with end wall 20, and as shown in Figure 3, but sidewall 18 preferably has the length SL long than the length EL of end wall 20.Because the length SL that sidewall 18 extends is long than the length EL of end wall 20, body 16 has the main part of vertically distributing that approximates sidewall length SL and distributes part with the less side direction that approximates end wall 20 length EL.In addition, it is long that the sidewall 18 of flute profile crucible 12 is preferably the substrate 24 that will apply, as shown in Figure 7, and such as using 15 inchage sidewalls 18 to apply 12 inches square base 24.
Consult Fig. 3-4, the sidewall 18 of body 16, end wall 20 and base portion 22 have constituted an inner chamber 26 and an outlet 27, the base portion 22 of body 16 has further constituted prominent rib 28 shown in Fig. 5 and 7, and the first surface 30 of these prominent rib 28 contiguous inner chambers 26 and base portion 22 is preferably between the sidewall 18 and extends.These prominent ribs 28 can be by integrally formed such as machining and body 16, so that further help Vertical Flux that deposition material 14 is evenly installed to flute profile crucible 12 and further calibrates flute profile crucible 12.As illustrated in Figures 5 and 6, even preferably load onto the deposition material 14 that is about 50 cubic centimetres to 100 cubic centimetres, whole flute profile crucible 12 can be rotated slightly around axis L2 such as the deposition material 14 in the prominent rib 28 of organic materials.Body 16 and prominent rib 28 are formed by the material that thermally conductive material preferably produces even heat distribution.Pottery is more desirable, but metal or other suitable material also can receive.Can apply different coatings to body 16, so that strengthen the wearing quality and the performance of body 16.
As shown in Figure 8, flute profile crucible 12 also can rotate slightly around longitudinal axes L.This makes a plurality of flute profile crucibles 12 (each is equipped with the different deposition material 14 such as the organic radical chemical) distribute the chemical of evaporation along public deposition axis 32.Different hydatogenesis materials 14 can be in the mixing region 34 mixes, and is evenly distributed in the substrate 24.Can use hole 36 to be aligned in the deposition material 14 of mixing region 34, and be restricted to the passage of the deposition material 14 of substrate 24.
Shown in Fig. 3-4 and 7-8, heating unit 38 adjacent body 1 location is preferably the outside surface near sidewall 18, upper limb 40 location near outlet 27 of heating unit 38 contiguous each sidewall 18 of concentrating.Concentrate heating unit 38 the recrystallizing of deposition material 14 that help to avoid evaporating near sidewall 18 upper limbs 40.Similarly, have the vertical temperature gradient of lesser temps at the base portion 22 of flute profile crucible 12, reduced splash by near the eruption that causes the base portion 22 by introducing one.Heating unit 38 preferably passes through surface mounting, but also can embed installation, perhaps near sidewall 18 location.Perhaps, heat is provided by the heating lamp (not shown), and heating unit 38 is located according to sidewall 18 certain distances of flute profile crucible 12, or passes through induction heating.
As shown in Figure 3, supply lead 42 is connected in heating unit 38.Electric thermo-couple temperature sensing probe 44 near flute profile crucibles 12, be preferably near base portion 22 location.Thermopair sensing probe 44 is connected in sensing equipment and other Working Procedure Controlling device 45 that control applies operation.
Suitable power control has been arranged, and the temperature of deposition material 14 can rise (ramp) to predetermined value.There has been suitable deposition material 14 to distribute monitoring,, just can have carried out throttling, with the predetermined speed that deposits or distribute deposition material 14 such as the quartz crystal motor.More intelligentized power controller and crystalline transducer have been arranged, but preprogrammed heat program just with degasification promptly with vacuumize, is prepared pure deposition material 14, so that the material source 10 of flute profile crucible 12 types has enough to meet the need fast.
In the second embodiment of the present invention as shown in Figure 9, material source 10 ' comprises the longitudinal axes L in the linear array of a plurality of edges in vacuum chamber 48 ' the point source crucible 46 that is provided with, to form one is to distribute member longitudinally basically, and this member approximates the length overall LA of linear array.Material source 10, the second embodiment as first embodiment provide a material source, and it distributes the transverse member of member greater than material source substantially longitudinally.Each point source crucible 46 has body 16 ', a heating unit 38 ', supply lead 42 ' and the electric thermo-couple temperature sensing probe 44 ' of a formation one outlet 27.Therefore the linear array pattern approximately imitates the flute profile crucible 12 shown in Fig. 3-8, can be used for coating width W2 greater than some inches substrate 24.But these benefits are offset by a plurality of requirement of known defective such as splash and separate power source, temperature demonstration, crystal head and feedback and control loop.
The material source that shows the third embodiment of the present invention 10 that Figure 10-13 is total ".As shown in figure 10, the material source 10 of the 3rd embodiment " comprises that first pipeline 56 or other are that hollow part is coated over the structure in the selectable heat shield 94 substantially.First pipeline 56 has two relative ends 58,60, has constituted at least one outlet 27 ".First pipeline 56 is by the column 62 that is connected in pedestal 64 or similarly supporting fixed device or hardware (hardware) are supported.As shown in figure 11, one such as the resistance heating element 74 of grid outside surface 76 location near first pipelines 56.
As shown in figure 12, second pipeline 66 or constitute other structure that fluid ground is connected in an inner chamber that exports and be contained in the inner chamber 68 that constitutes by first pipeline 56.Constitute second pipeline, 66 total formation one fluids hold such as the deposition material 14 of organic radical or other chemical and be connected in second outlet 27 ' " second inner chamber 70.First pipeline 56 and second pipeline 66 are all made by pottery or other suitable material.The central axis C 1 of first pipeline 56 can overlap ground with the central axis C 2 of second pipeline 66 or locate prejudicially.The outlet 27 that second outlet, 27 " ' can constitute with first pipeline 56 " align, or select, the deposition material 14 that is contained in second pipeline 66 and the line of a visual channel SP between the substrate 24 are not represented in outlet 27 ", 27 " ' with non-coincidence aligned configuration alignment, the outlet 27 that is made of first and second pipelines 56,66 ", 27 " '.In order to make first pipeline 56 and 66 alignment of second pipeline, the selectable supporting bar of being made by quartzy or other suitable material 72 extends between the opposed end 58,60 of first pipeline 56.Additional second pipeline 66 also can be contained in first pipeline 56, to allow distributing of a plurality of chemical.
Figure 13 shows the third embodiment of the present invention in more detail, and wherein grid type or resistive heating elements 74 replace with resistive heating elements 74 '.Resistive heating elements 74 ' comprises the first layer 78 such as aluminum oxide of thermal conduction electrical isolation, follows the second resistance-type layer 80 by NiCr or other suitable resistance-type conductive material, follows by the thermal conduction electrical isolation the 3rd layer 78 '.As previously mentioned, heat shield 94 and insulation button 96 are near the 3rd layer of location of thermal conduction electrical isolation.
Continue to consult Figure 13, first and second pipelines 56,66 are nested together.One of opposed end of first pipeline 56 58 removably is connected in the relative end 84 of second pipeline 66, and wherein the end 84 of second pipeline removably is connected in second pipeline 66.The bar 88 that is surrounded by an axle sleeve 90 passes the end 58 of first pipeline 56 and corresponding opposed end 84 extensions of second pipeline 66.Also second bar 88 ' that is surrounded by axle sleeve 90 ' passes another opposed end 86 extensions of another opposed end 60 and second pipeline 66 of first pipeline 56.Second bar 88 ' is supported by a jagged supporting arm 92 that is connected in base portion 64.Heat shield 92 and being used to is located insulation button 94 fronts of heat shield 92 and was discussed.
At least one electrode 98 passes the material source 10 of the 3rd embodiment " base portion 64 extend, by insulating material 100 and base portion 64 electrical isolations such as pottery or other suitable material.Electrode 98 makes resistive heating elements 74 " is connected in supply lead 42.Allly electrically contact clamping element 102 first pipeline 56 removably is connected in electrode 98.
The material source of any embodiment of the present invention is used to apply a substrate 24, and wherein flute profile crucible 12 or hollow pipeline 56 " material source 10,10 " are preferable.For clarity sake, unless otherwise indicated outside, only describe first
Embodiment.
In first working method shown in Fig. 7-8, it is then one or more material source 10 and one or more substrates 24 to be navigated to beginning in the vacuum chamber 48 by deposition material 14 being positioned in the material source 10 that coating is operated.Material source 10 should be located in parallel with each other, and the substrate axis 50 of each substrate 24 is approximately located perpendicular to the longitudinal axes L of parallel material source 10.
Another selectable step is to be deposition material 14 degasification of material source 10, vacuum chamber 48 and predetermined amount.For example, add the deposition material 14 of flute profile crucible 12 total be 70 cubic centimetres to 100 cubic centimetres, but can increase or reduce according to the size of material source 10.
Next step is, vacuum chamber 48 is discharged to required vacuum pressure, is preferably less than 110 (3) torr, usually less than 910 (6) torr, or other suitable vacuum pressure.In case suitable vacuum is set up, next step is that heating is contained in the deposition material 14 in the material source 10 one or more, up to deposition material 14 evaporations and propagate the deposition material 14 of the evaporation of plume shape 52.In case evaporation beginning, next step is, makes substrate 24 move through the plume 52 of linearity configuration with constant speed v, shown in Fig. 7 and 8.The feature of thin film deposition is growth rate＞=per second 10 dusts normally, film equality＞95%.Substrate 24 can be moved by any suitable running gear, and the overhead conveyor (not shown) is preferable.
At third embodiment of the present invention material source 10 " operation in, deposition material 14 installs to second pipeline 56, and by the radiant heat heating from the internal surface 82 of first pipeline 56.Deposition material 14 is evaporated and passes through the one or several outlets 27 " and one or more outlets 27 of first pipeline, 56 formations " that second pipeline 66 constitutes ', enter vacuum chamber 48 then.By second pipeline 66 outlet 27 " ' that constitutes and the outlet 27 that constitutes by first and second pipelines 56,66 " ', 27 " overlap; also can be alignment with overlapping, the wherein outlet 27 " ', 27 of first and second pipelines 56,66 " between deposition material 14 and substrate 24, do not present a visual line SP.
Shown in Fig. 7 and 8, but total applicable to all embodiment, the linear design of material source 10 helps to guarantee that film equality is to the real edges place 54 of substrate 24 when substrate 24 during through the plume 52 of hydatogenesis materials 14.But; If use flute profile crucible 12 or hollow pipe formula material source 10, vertical SL of sidewall 18 (or pipeline) is manufactured longer than the width W 2 of substrate 24, homogeneity just is easy to reach.This is owing to exist the integration Gauss flux that distributes can be used for strengthening from the end wall 20 of material source 10 to distribute the reduction number at angle.The use in variable outlet or aperture can remedy this effect, and produces one and cross more uniform the distributing that material source distributes.
Obviously, the present invention can make big substrate 24 coating deposition materials 14.When obtaining this result, total minimizing the waste of deposition material 14, to the exposure in the material of potentially dangerous, to the requirement of big vacuum chamber 48, coating time and running cost.Because the present invention produces one with an a single point or revise plume that point source produces to compare total on the material source of longer longitudinal member be linear evaporation plume, heterogeneity of observing from point source and their relevant cosine distribution plume have been eliminated or have been reduced widely.In addition, be not that jet length is increased to several foot obtaining 95% degree of uniformity, but jet length can be less than one foot, this size with the base side surface area that will apply is irrelevant.
Another feature of the present invention is that the major part that available effective Gauss distributes the angle deposits the substrate with constant speed process on one or more material sources.This causes the directly bigger chemical of deposition per-cent in substrate, rather than carries out unnecessary coating at the internal surface of vacuum chamber.This has reduced stoppage time, greatly reduces the organic chemicals cost of each substrate that will apply.Relevant benefit is, because material source has than point source or revise the long longitudinal member of point source, more chemical is packed in the material source, when material source can cause saving stoppage time in commercial applications applying more substrate again between the feeding study on period.
Because having the lead-in wire connection (feedthrough) of standard, material source is connected, so also improved handiness with power supply.Any vacuum system that can receive linear splash material source at present all can be ressembled this material source in this position.The vacuum system of being furnished with 6 inches to 12 inches circular splash source also can receive the material source of similar or same size.Therefore, do not need to construct new vacuum system, just can obtain organic deposit ability of the present invention.Material source can also will oneself be arranged to some row or array in a finite space size.Can be a vacuum system and prepare some material sources, make when a material source uses up deposition material, can use next material source.In addition, in fact eliminated the material splash of flute profile crucible type or duct type material source owing to lower heat gradient and crucible working temperature.
In conjunction with preferred embodiment the present invention has been described.Those skilled in the art can do some conspicuous variation and change when reading and understand the detailed explanation of front.The present invention will be construed to and comprise all variations and change, these include in the scope of appending claims or its equivalent.
Claims (22)
1. the vacuum deposition system of a coated substrate, it comprises:
One vacuum chamber;
One is positioned at the material source of described vacuum chamber, described material source has a body, this body longitudinally axis extends, and has one and distributes member substantially longitudinally, and constitute an inner chamber and a fluid is connected in the outlet, of described inner chamber near a localized upper end of described outlet and a base portion; And
One thermal source is located near the described body of described material source along the longitudinal axis of described body,
Wherein thermal source produces a vertical temperature gradient in material source, and the upper end of the metering of this vertical temperature gradient from the base portion of material source to material source makes that the temperature of base portion of material source is lower than the upper end of material source.
2. vacuum deposition system as claimed in claim 1, it is characterized in that, also comprise a substrate, this substrate has one to be parallel to the width that described body longitudinal axis is measured, and wherein the jet length of measuring between side of described substrate and described outlet remains unchanged with the increase of the described width of described substrate.
3. vacuum deposition system as claimed in claim 1, it is characterized in that, also comprise a substrate, this substrate has one to be parallel to the width that described body longitudinal axis is measured, and the described basic longitudinal component of the described body of wherein said material source equals the described width of described substrate.
4. vacuum deposition system as claimed in claim 1, it is characterized in that, also comprise a substrate, this substrate has one to be parallel to the width that described body longitudinal axis is measured, and the described basic longitudinal component of the described body of wherein said material source is less than the described width of described substrate.
5. vacuum deposition system as claimed in claim 1 is characterized in that, also comprises the deposition material in the described inner chamber of the described body that is added to described material source.
6. vacuum deposition system as claimed in claim 5 is characterized in that, described deposition material is selected from the material group that comprises organic radical chemical and organic radical compound.
7. vacuum deposition system as claimed in claim 5, it is characterized in that, described deposition material is heated by described thermal source along the longitudinal axis of described body, and described deposition material ejects by the described outlet of substantially vertically distributing member along the described body of described material source.
8. vacuum deposition system as claimed in claim 7 is characterized in that described thermal source is a heater coil, the quantity of heating unit that is positioned at the described upper end of described body many than at the described base portion of described body.
9. vacuum deposition system as claimed in claim 1 is characterized in that, comprises that also one is connected in the process controller of the described body of described material source.
10. vacuum deposition system as claimed in claim 1 is characterized in that, described outlet is extended continuously along the described member that substantially vertically distributes of described body.
11. vacuum deposition system as claimed in claim 1 is characterized in that, also comprises the prominent rib of the described inner chamber that some described bodies that are arranged in by described material source constitute.
12. vacuum deposition system as claimed in claim 1 is characterized in that, described body is an open trough-shape, has the sidewall and the pair of end walls of two longitudinal extensions, and the sidewall of wherein said longitudinal extension and described end wall have constituted the described inner chamber of described body.
13. vacuum deposition system as claimed in claim 1, it is characterized in that, also comprise one first pipeline, this pipeline constitutes first outlet that an inner chamber and a fluid are connected in described inner chamber, and wherein said body is one to be contained in second pipeline in the described inner chamber of described first pipeline.
14. vacuum deposition system as claimed in claim 13 is characterized in that, is alignd with the described outlet that is made of described second pipeline by described first outlet that described first pipeline constitutes.
15. vacuum deposition system as claimed in claim 13 is characterized in that, is alignd with the described outlet that is made of described second pipeline with non-coincidence structure by described first outlet that described first pipeline constitutes.
16. the method with a material source and a vacuum chamber coated substrate, this method comprises the steps:
Described material source is positioned in the described vacuum chamber, described material source has the body that extends of axis longitudinally, and body has one and distributes member substantially longitudinally and constitute an inner chamber and a fluid is connected in the outlet, of described inner chamber near a localized upper end of described outlet and a base portion;
One substrate is positioned in the described vacuum chamber, relative with the described outlet that described body by described material source constitutes;
One deposition material is added in the described inner chamber that the described body by described material source constitutes;
Find time described vacuum chamber to form vacuum;
With longitudinal axis heating the described deposition material in the described inner chamber of described body of thermal source along described body, wherein thermal source produces a vertical temperature gradient in material source, the upper end of the metering of this vertical temperature gradient from the base portion of material source to material source makes that the temperature of base portion of material source is lower than the upper end of material source;
The deposition material of evaporation distributes along the basic longitudinal component of described body; And
Move the deposition material of described substrate by described evaporation.
17. the method for usefulness one material source as claimed in claim 16 and a vacuum chamber coated substrate is characterized in that described substrate moves through the deposition material of described evaporation with constant speed.
18. a vacuum-deposited material source that is used for the deposition material on substrate surface, described material source comprises:
Two bodies, each body constitute the outlet that an inner chamber and at least one fluid are connected in described inner chamber;
One heating unit is placed near described each body and along the length of each body and extends;
Wherein said two bodies distribute member along a public longitudinal axis alignment substantially longitudinally to form one, are alignd with non-coincidence structure by each outlet that described each body constitutes.
19. material source as claimed in claim 18 is characterized in that, one of described two bodies are the point source crucibles.
20. material source as claimed in claim 18 is characterized in that, one of described two bodies are the point source crucibles of revising.
21. material source as claimed in claim 18 is characterized in that, comprises that also one is connected in the process controller of one of described two bodies of described material source.
22. material source as claimed in claim 18 is characterized in that, the described inner chamber of described two bodies is configured to hold the deposition material of selecting from the material group that comprises an organic radical chemical and an organic radical compound.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16109499P | 1999-10-22 | 1999-10-22 | |
| US60/161,094 | 1999-10-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1402800A CN1402800A (en) | 2003-03-12 |
| CN1175126C true CN1175126C (en) | 2004-11-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB00816326XA Expired - Fee Related CN1175126C (en) | 1999-10-22 | 2000-10-20 | Method and apparatus for coating substrate in vacuum |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1246951A4 (en) |
| JP (1) | JP2003513169A (en) |
| KR (1) | KR100495751B1 (en) |
| CN (1) | CN1175126C (en) |
| AU (1) | AU1339401A (en) |
| CA (1) | CA2388178A1 (en) |
| DE (1) | DE10085115T1 (en) |
| TW (1) | TW574396B (en) |
| WO (1) | WO2001031081A1 (en) |
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| WO2004028214A1 (en) | 2002-09-20 | 2004-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system and manufacturing method of light emitting device |
| US7211461B2 (en) | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
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| US7211454B2 (en) | 2003-07-25 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate |
| US8123862B2 (en) | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
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| KR102319998B1 (en) * | 2015-01-22 | 2021-11-01 | 삼성디스플레이 주식회사 | Deposition source having volume changeable type crucible |
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- 2000-10-20 AU AU13394/01A patent/AU1339401A/en not_active Abandoned
- 2000-10-20 WO PCT/US2000/029099 patent/WO2001031081A1/en not_active Application Discontinuation
- 2000-10-20 JP JP2001533213A patent/JP2003513169A/en active Pending
- 2000-10-20 CA CA002388178A patent/CA2388178A1/en not_active Abandoned
- 2000-10-20 DE DE10085115T patent/DE10085115T1/en not_active Withdrawn
- 2000-10-20 TW TW89122148A patent/TW574396B/en not_active IP Right Cessation
- 2000-10-20 CN CNB00816326XA patent/CN1175126C/en not_active Expired - Fee Related
- 2000-10-20 KR KR10-2002-7005091A patent/KR100495751B1/en not_active IP Right Cessation
- 2000-10-20 EP EP00975328A patent/EP1246951A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| TW574396B (en) | 2004-02-01 |
| WO2001031081A1 (en) | 2001-05-03 |
| EP1246951A1 (en) | 2002-10-09 |
| DE10085115T1 (en) | 2002-11-07 |
| EP1246951A4 (en) | 2004-10-13 |
| AU1339401A (en) | 2001-05-08 |
| KR20020068039A (en) | 2002-08-24 |
| CN1402800A (en) | 2003-03-12 |
| JP2003513169A (en) | 2003-04-08 |
| CA2388178A1 (en) | 2001-05-03 |
| KR100495751B1 (en) | 2005-06-17 |
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