CN1074579A - A kind of semiconductor electric-heating thin film and processing method thereof - Google Patents
A kind of semiconductor electric-heating thin film and processing method thereof Download PDFInfo
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- CN1074579A CN1074579A CN 92113940 CN92113940A CN1074579A CN 1074579 A CN1074579 A CN 1074579A CN 92113940 CN92113940 CN 92113940 CN 92113940 A CN92113940 A CN 92113940A CN 1074579 A CN1074579 A CN 1074579A
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Abstract
A kind of tin ash semiconductor thermoelectric film with a kind of treatment fluid that is mixed with bismuth chloride and trichloride antimony or ferric trichloride or titanium tetrachloride, is made Electric radiant Heating Film with heating in vacuum fumigating system pyrolysis film forming.Whole manufacture craft is to carry out in a heating in vacuum device for fumigation.The treatment fluid of selecting for use different resistances to adjust agent can be made the semiconductor thermoelectric film of multiple resistance section.The Electric radiant Heating Film uniformity height of making in this way, adhesion is strong, and Standard resistance range is wide, and is applied widely, can reach useful life more than 7000 hours, and product qualified rate is more than 95%.This manufacture craft energy consumption is low, and is low in the pollution of the environment, with short production cycle, and production cost is low.
Description
The present invention is relevant with thermo electric material, relates to the technical recipe for preparing a kind of semiconductor electric-heating thin film and the improvement of process technology.
The appearance of electrothermal film heater has overcome defectives such as the strip heater heating is inhomogeneous, heat transfer is slow, the heat efficiency is low, and the heat efficiency has improved 30-50%, because Electric radiant Heating Film does not produce naked light, so use than heating wire safety, its useful life is also much longer.
A kind of paint-type electric heating film is a main material with graphite powder, lemel, conductive compound fine powder and insulating varnish etc., is painted on the ground, and this in actual use film breaks easily and comes off, punctures, unsuitable dry combustion method, and useful life is short.The CN85201753 patent is released a kind of semiconductor heating film, with sno
2Be main material, by the heater that this Electric radiant Heating Film is made, working temperature has only about 150 ℃.The CN1033225A patent proposes a kind of tin ash Electric radiant Heating Film of mixing antimony and boron, sprays the butter of tin solution that contains antimony and boron down at 400-900 ℃, the semiconductor thermoelectric film of making, and its working temperature can reach 350-50 ℃.CN1051059A also releases a kind of tin ash Electric radiant Heating Film of mixing cadmium, at 480-650 ℃ of following dip coating, produces the semiconductor heating film, has further improved the heat resistance of this semiconductor thermoelectric film.
Prior art adopts the high temperature pyrolysis of spraying or dip coating to produce semiconductor thermoelectric film, and this method is difficult to guarantee the uniformity of film, also influences the stability of product, and the rate of finished products of product is low.The semiconductor thermoelectric film of so making in addition, resistance is single, and the resistance scope of application is narrow, and the energy consumption height, and production environment is seriously polluted.
The object of the present invention is to provide and a kind ofly produce that multiple resistance value section, resistance range of choice are wide, the semiconductor thermoelectric film production technology of good evenness, good stability.
Semiconductor thermal transition material (the Semicondusrion Jhermal Conversion material of the present invention's development, be called for short STC) be in the ethanolic solution of tetrachloro tin, to have added a kind of stabilizer bismuth chloride and resistance adjustment agent, its constituent content (weight %) is: the butter of tin of 44-50,49-54 ethanol, the bismuth trichloride of trace-0.6, adjust agent with the resistance of 0.3-2, said resistance is adjusted agent, and it is selected from trichloride antimony, ferric trichloride and titanium tetrachloride, is mixed with various composition treatment fluids thus.
The present invention passes through at sno
2In mix microcomponents such as bismuth, antimony, iron, titanium or fluorine respectively, can be made into multiple resistance interval (represent with square resistance Rn below roughly the same) and be suitable for multi-purpose semiconductor thermoelectric film.The resistance interval of tin ash semiconductor thermoelectric film of containing antimony, iron or titanium is as shown in the table.10 hours its resistance change of energising are less than ± 2.5% continuously under 242V voltage to mix the Electric radiant Heating Film made behind the trace bismuth, and the Electric radiant Heating Film change in resistance of not mixing bismuth is greater than 7%.Can make the Electric radiant Heating Film service behaviour more stable so mix bismuth.
| Doping element | Antimony | Iron | Titanium |
| Resistance interval (Rn) | 1－500Ω | 100－7000Ω | 1000－12000Ω |
Can be mixed with plural types of processings liquid according to mentioned above principle.A kind of constituent content (weight %) that with the trichloride antimony is resistance is adjusted the treatment fluid of agent is: 44-49 butter of tin, 49-53 ethanol, the bismuth trichloride of 0.5-2 trichloride antimony and trace-0.5.This inorganic agent is suitable for making the semiconductor thermoelectric film of low resistance, and minimum can be accomplished Rn1 ohm, and its resistance interval that is suitable for is (Rn) 1 to 500 ohm.
A kind of is the treatment fluid that resistance is adjusted agent with the ferric trichloride, and its constituent content (weight %) is: 45-50 butter of tin, 49-54 ethanol, 0.2-0.8 ferric trichloride and trace-0.2 bismuth trichloride.With the semiconductor thermoelectric film that this treatment fluid is made, the comparable resistance of mixing the semiconductor thermoelectric film of antimony of its Rn resistance improves 10 times, and its resistance interval that is suitable for is (Rn) 100-7000 ohm.
Another kind of is the treatment fluid that resistance is adjusted agent with the titanium tetrachloride, and its constituent content (weight %) is: 45-49 butter of tin, 49-54 ethanol, 0.3-1 titanium tetrachloride and 0.1-0.5 bismuth trichloride.With the semiconductor thermoelectric film that this treatment fluid is made, the comparable resistance of mixing the semiconductor thermoelectric film of antimony of its Rn resistance increases 20-200 doubly, and its resistance interval that is suitable for is (Rn) 1000-12000 ohm.
Also having a kind of is the treatment fluid that resistance is adjusted agent with the trichloride antimony, wherein also contain a spot of hydrofluoric acid, its constituent content (weight %) is: 46-49.7 butter of tin, 49.7-51.3 ethanol, 0.5-1.4 trichloride antimony, the hydrofluoric acid of 0.1-0.5 bismuth trichloride and trace-0.2.This treatment fluid is mainly used in the semiconductor thermoelectric film of producing on the glass material, and hydrogen fluoride plays the surface-active effect of reinforcing glass here.
This in the prior art tin ash semiconductor thermoelectric film is with the spraying high temperature pyrolytic cracking (HTP), (CN1033225A), dipping high temperature pyrolysis (CN1051059A) method makes.This manufacture method, the one, the Electric radiant Heating Film uniformity of making is poor; The 2nd, pyrolysis temperature height, the power of finishing stove the local bumping of treatment fluid when not only energy consumption height, and spraying or dipping, splash generally all more than 15KW, have not only wasted material but also contaminated environment.An important feature of the present invention is to adopt a kind of heating in vacuum fumigating system to make this semiconductor thermoelectric film.This manufacture craft realizes in a vacuum fumigation device.As shown in Figure 1, said vacuum fumigation device comprises a main part and a liquid evaporation source.The vacuum chamber (or chamber) (8) that main part is made up of a base (2) and vacuum (-tight) housing (4) is equipped with sealing ring (3) between vacuum (-tight) housing and the base, have a gas outlet (1) to be connected with vacuum pump on the base.A movable system film workpiece holder (5) and a movable workpiece heater (6) of pressing close to it are housed in vacuum chamber (or chamber).The structure of said workpiece heater is plane formula or concave surface type heater (6), or tubulose internal heating type heater (12), or tubulose external heating type heater (13).Bracing frame and heater are handled by brake mechanism (10,11), can do translation or rotation adjusting.A triple valve (7) is housed on the top of vacuum chamber.Said liquid evaporator (9) communicates with triple valve by a pipe, perhaps directly places in the vacuum chamber, on the base of bracing frame below, so just constitutes a complete heating in vacuum device for fumigation.
Make semiconductor thermoelectric film of the present invention in such vacuum fumigation device, concrete steps are: a) clean the workpiece of waiting to make film, oven dry is placed in the vacuum chamber of device; B) getting a certain amount of treatment fluid inserts in the liquid evaporator; C) starting vacuum pump is evacuated vacuum chamber; D) begin to heat the workpiece of waiting to make film this moment.According to the different requirements of workpiece, heating-up temperature can be controlled at 200-380 ℃; E) heat treated liquid then makes the treatment fluid carburation by evaporation; F) Qi Hua treatment fluid steam then can enter vacuum chamber, is attached to surface of the work, and on surface of the work pyrolysis takes place, and generates said semiconductor thermoelectric film.Preferably make film under rough vacuum in the operation of making Electric radiant Heating Film, vacuum degree is 10 in the control vacuum chamber
5-10pa, this moment, energy consumption was lower, the production efficiency height.
Measured the uniformity of making Electric radiant Heating Film by the present invention with following method.Assay method is: on a ceramic circular slab, make a slice annulus film (18) as Fig. 3 .C as stated above, with the resistance of multitester measuring each point, the resistance that goes up each point at the circular arc (19) of same radius is identical; Then measure as follows for square Electric radiant Heating Film (18): mark a rice word (17) (as Fig. 3 .D) on quadrangular membrane, survey the resistance of nine points arbitrarily, the each point resistance equates that this film uniformity of expression is good.
Measured the adhesion strength of the Electric radiant Heating Film that the present invention makes by " membrane science and technical manual " (Tian Minbo, Liu Deling compiling the first volume p177 of China Machine Press page or leaf) given method.This assay method is the vertical distraction mensuration, and its brief principle is: (seeing accompanying drawing 4) is bonded in a round bar spare bottom surface on (STC) film with binding agent, adds the power perpendicular to the bar axle in the rod member upper end, and rod member is toppled over.Size according to draw back the required power of rod member (peel off be as the criterion with film) from substrate is calculated as follows adhesion strength.Computing formula:
A= 32/(π) · (HF)/(D
3)
In the formula: A-adhesive force, the power when F-peels off, D-diameter, H-rod member length
The bonding bonding agent that uses is the Araldite resin, and test is carried out being lower than less than 20 ℃ and humidity under 60% the condition.
Experiment test shows, its uniformity of semiconductor thermoelectric film of making by method of the present invention is greater than 90%, and adhesion strength is greater than 200kg/cm
2, the finished product rate is more than 95%.
In conjunction with the accompanying drawings production technology of the present invention is described further with a concrete instance more below.
Fig. 1 is vacuum fumigation apparatus structure schematic diagram among the present invention;
Fig. 2 is the tubular heater schematic diagram;
Fig. 3 is the semiconductor electric-heating thin film structural representation of making;
Fig. 4 is a MEASUREMENTS OF THIN adhesion strength schematic diagram.
(12) are the tubulose internal heater among Fig. 2 .a, make heating film in order to heat tubular workpiece (14) at the outer surface of tubular workpiece; (13) are tubulose external heat device among Fig. 2 .b, in order to heat tubular workpiece (15), make heating film at the inner surface of tubular workpiece (15).
The Electric radiant Heating Film that (16) are adhered to for surface of the work for electrode (18) among Fig. 3, (19) are circular mould uniformity slotted line, and (17) are quadrangular membrane uniformity slotted line.
(20) are force cell among Fig. 4, the rod member that (21) are bonding, (22) bonding agent, the film that (23) are measured, (24) substrate.
Get butter of tin 100 grams, absolute ethyl alcohol 105ml, trichloride antimony 1.8 grams three Bismuth chloride 0.5 gram, it is for subsequent use that mixed dissolution is made treatment fluid. Get 0.35 milliliter and put into liquid evaporator (9).
Be 180 millimeters ceramic circular slab with diameter, firmly do not need membrane portions processed with covering membrane cover, reserve the annulus of 80 millimeters of internal diameters, 160 millimeters of external diameters. Ready ceramic wafer is fixed on the interior workpiece holder (5) of vacuum chamber, presses close to workpiece heater (6), build vacuum (-tight) housing (4), check whether sealing is good. Start vavuum pump and make that vacuum is 10 in the vacuum chamber5Pa closes vacuum valve. Heated parts is warmed up to 341 ℃, and heating evaporation source (9) make the treatment fluid carburation by evaporation again. This moment, treatment fluid steam just was attached to the expose portion of ceramic wafer, and on ceramic surface pyrolysis film forming (such as Fig. 3), obtain semiconductor thermoelectric film of the present invention.
The semiconductor thermoelectric film of making by method of the present invention, can AC and DC dual-purpose, its suitable power be 0.3 ω/cm2-23ω/cm
2, selecting voltage is 3-220V, the Electric radiant Heating Film serviceability temperature that the present invention makes can reach 600 ℃. When power is 10 ω/cm2, temperature is in 200 ℃ the time, and its service life is at least more than 2000 hours, when power is 2 ω/cm2, temperature is in 300 ℃ the time, at least more than 7000 hours.
In sum, advantage of the present invention is clearly, and the vacuum heating fumigating of pressing the present invention's proposition is made the production technology of semiconductor thermoelectric film, and its energy consumption only has 1/5 of prior art. Its production cycle shortens 2/3rds than prior art. Film forming uniformity height, adhesion strength is big, and yield rate is more than 95%. Because the film good evenness that the film method processed that the present invention proposes is made, Therefore its service life is longer than prior art.
Because the present invention has selected multiple resistance adjusting agent, can make the Electric radiant Heating Film in several different resistances interval, select suitable treatment agent formula to make the semiconductor thermoelectric film of all size according to product needed, provide wide prospect for opening up the semiconductor thermoelectric film new application.
The invention will be further described to use several embodiment below again, is not limited to certainly among these several examples.
Example 1,2,3
Be the treatment agent formula that resistance is adjusted the agent preparation with trichloride antimony below, make Electric radiant Heating Film on pottery, making temperature is 341 ℃.
Example 123
Composition weight %
Butter of tin 45.5 47.0 48.5
Absolute ethyl alcohol 52.5 51.5 50.5
Trichloride antimony 0.6 0.7 0.9
Bismuth trichloride 0.2 0.3 0.4
Performance
Resistance Rn (Ω) 400 200 50
Working temperature ℃ 250 250 250
The uniformity (resistance deviation) ± 8 ± 5 ± 4
Example 4,5,6
Be the prescription for the treatment of liquid that resistance is adjusted the agent preparation with ferric trichloride below, make Electric radiant Heating Film on enamel, making temperature is 325 ℃.
Example 456
Composition weight %
Butter of tin 45.9 47.2 48.7
Absolute ethyl alcohol 52.6 61.6 50.2
Ferric trichloride 0.3 0.55 0.7
Bismuth trichloride 0.2 0.3 0.4
Performance
Resistance Rn (Ω) 300 950 6000
Working temperature ℃ 300 200 100
The uniformity (resistance deviation) ± 5 ± 6-9
Example 7,8,9
Be the prescription for the treatment of liquid that resistance is adjusted the agent preparation with titanium tetrachloride below, make Electric radiant Heating Film on mica sheet, making temperature is 290 ℃.
Example 789
Composition weight %
Butter of tin 45.9 47.2 48.7
Absolute ethyl alcohol 52.6 51.6 50.2
Titanium tetrachloride 0.3 0.55 0.7
Bismuth trichloride 0.2 0.3 0.4
Performance
Resistance Rn (Ω) 4,000 8,500 10500
Working temperature ℃ 100 60 40
The uniformity (resistance deviation) ± 5+6+8
-5 -8
Example 10,11,12
Below be the prescription for the treatment of liquid that is used for producing on the glass material Electric radiant Heating Film, making temperature is 350 ℃
Example 10 11 12
Composition weight %
Butter of tin 47.5 48 49.2
Absolute ethyl alcohol 50.8 50.2 49.8
Trichloride antimony 0.6 0.75 0.9
Hydrofluoric acid 0.03 0.08 0.12
Bismuth trichloride 0.2 0.35 0.7
Performance
Resistance Rn (Ω) 500 100 1
℃ 250 ℃ 200 150 of working temperatures
The uniformity (resistance deviation) ± 7 ± 5 ± 2
Claims (9)
1, a kind of semiconductor electric-heating thin film, with a kind of treatment fluid that contains butter of tin and ethanol, coat surface of the work, form semiconductor electric-heating thin film through pyrolysis, it is characterized in that in said treatment fluid, containing stabilizer bismuth chloride and resistance and adjust agent, select for use different resistances to adjust the treatment fluid of agent preparation, can produce the semiconductor thermoelectric film of multiple resistance section, the constituent content of said treatment fluid (weight %) is:
The 40-50 butter of tin
49-54 ethanol
Trace-0.6 bismuth trichloride
0.3-2 resistance is adjusted agent, it is selected from trichloride antimony, ferric trichloride and titanium tetrachloride.
2, according to the described semiconductor electric-heating thin film of claim 1, it is characterized in that with the trichloride antimony being the treatment fluid that resistance is adjusted the agent preparation, can be used for producing resistance (Rn) is the semiconductor electric-heating thin film of 1 to 500 Ω, the constituent content (weight %) of treatment fluid is: the butter of tin of 44-49, the ethanol of 49-53, the bismuth trichloride of the trichloride antimony of 0.5-2 and trace-0.5.
3, according to the described semiconductor electric-heating thin film of claim 1, it is characterized in that with the ferric trichloride being the treatment fluid that resistance is adjusted the agent preparation, can be used for producing resistance (Rn) and be the semiconductor electric-heating thin film of 100-7000 Ω, the constituent content (weight %) of treatment fluid is: the butter of tin of 45-50, the ferric trichloride of the ethanol 0.2-0.8 of 49-54 and the bismuth trichloride of trace-0.2.
4, according to the described semiconductor electric-heating thin film of claim 1, it is characterized in that with the titanium tetrachloride being the treatment fluid that resistance is adjusted the agent preparation, can be used for producing the semiconductor electric-heating thin film of resistance (Rn) 1000～12000 Ω, the constituent content (weight %) of treatment fluid is: the butter of tin of 45-49, the ethanol of 49-54, the titanium tetrachloride of 0.3-1 and the bismuth trichloride of 0.1-0.5.
5, according to the described semiconductor electric-heating thin film of claim 2, it is characterized in that a kind of treatment fluid that is used for producing glass material semiconductor-on-insulator Electric radiant Heating Film also contains hydrofluoric acid, its constituent content (weight %) is: the butter of tin of 46-49.7,49.7-51.3 ethanol, 0.5-1.4 trichloride antimony, the hydrofluoric acid of the bismuth trichloride of 0.1-0.5 and trace-0.2.
6, according to the production method of the described semiconductor electric-heating thin film of claim 1, it is characterized in that it being in a vacuum fumigation device, make electric-heating thin film with the heating in vacuum fumigating system, concrete steps are:
(a) clean the workpiece of waiting to make film, oven dry is placed in the vacuum chamber;
(b) getting quantitative Treatment liquid inserts in the evaporation source;
(c) start vacuum pump, vacuum chamber is evacuated;
(d) heating waits to make the film workpiece to 200-380 ℃;
(e) heat treated liquid makes the treatment fluid carburation by evaporation;
(f) Qi Hua treatment fluid steam enters vacuum chamber, is attached to the surface of the work pyrolysis and generates said semiconductor thermoelectric film.
7, according to the production method of the described semiconductor thermoelectric film of claim 6, it is characterized in that the stifling filming technology of said heating in vacuum is to make film under rough vacuum, the vacuum degree in the vacuum chamber is 10
3-10Pa.
8, vacuum fumigation device according to the described production semiconductor electric-heating thin film of claim 6, comprise a main part and a liquid evaporation source, it is characterized in that the vacuum chamber (or chamber) (8) that said main part is made up of a base (2) and vacuum (-tight) housing (4), sealing ring (3) is housed between vacuum (-tight) housing and the base, there is a gas outlet (1) to be connected on the base with vacuum pump, a movable system film workpiece holder (5) and a movable workpiece heater (6) of pressing close to it are housed in vacuum chamber (or chamber), bracing frame and heater are by brake mechanism (10,11) handle, can do translation or rotation adjusting, a triple valve (7) is housed on the top of vacuum chamber, said liquid evaporator (9) communicates with triple valve by a pipe, perhaps directly places on the base of vacuum chamber inner support frame below.
9, according to the described vacuum fumigation device of claim 8, said workpiece heater is: plane formula heater or concave surface type heater (6), or tubulose internal heater (12) or the outer heater (13) of tubulose.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92113940 CN1032673C (en) | 1992-12-11 | 1992-12-11 | Semiconductor electric-heating thin film and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92113940 CN1032673C (en) | 1992-12-11 | 1992-12-11 | Semiconductor electric-heating thin film and manufacture thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1074579A true CN1074579A (en) | 1993-07-21 |
| CN1032673C CN1032673C (en) | 1996-08-28 |
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ID=4946686
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92113940 Expired - Lifetime CN1032673C (en) | 1992-12-11 | 1992-12-11 | Semiconductor electric-heating thin film and manufacture thereof |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1052370C (en) * | 1996-03-12 | 2000-05-10 | 尹维平 | Inorganic oxide electric heating film and the manufacture thereof |
| WO2005055662A1 (en) * | 2003-12-02 | 2005-06-16 | Jian Chen | A high temperature, high efficient and multifunction inorganic electric heating film and manufacture method thereof |
| CN100349498C (en) * | 2003-10-17 | 2007-11-14 | 杨金林 | Electric-heating film and manufacturing method thereof |
| CN102036432A (en) * | 2010-10-11 | 2011-04-27 | 李瑞勇 | Electric heating membrane and production method thereof |
| CN102065589A (en) * | 2010-12-27 | 2011-05-18 | 宁波高新区健坤电热技术有限公司 | Method for manufacturing high-temperature resistant transparent electric heating film |
| CN102131316A (en) * | 2010-09-28 | 2011-07-20 | 施吉承 | Formula of conductive film solution of electrothermal film heating tube |
| CN101668359B (en) * | 2009-08-11 | 2012-10-31 | 罗日良 | Electrothermal film and manufacturing method thereof |
| CN104091882A (en) * | 2014-07-03 | 2014-10-08 | 陈国栋 | Double-layer high-radiation electrothermal film structure and manufacturing method |
| CN106036370A (en) * | 2016-06-21 | 2016-10-26 | 中山市乾元高科电子有限公司 | Heating self balance heating body |
| CN106686772A (en) * | 2016-12-12 | 2017-05-17 | 深圳市中和纳米技术开发有限公司 | Making method of high-temperature transparent electrothermal film |
| CN107682944A (en) * | 2017-10-24 | 2018-02-09 | 张东升 | A kind of semiconductor thermoelectric film and preparation method thereof |
| CN108337746A (en) * | 2018-01-25 | 2018-07-27 | 陈昭 | High stable heating element and preparation method thereof |
| CN111996499A (en) * | 2020-08-31 | 2020-11-27 | 中能华邦环保科技有限公司 | Evaporation plating equipment for inner and outer membranes of nano tube meteorological furnace |
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| CN1052370C (en) * | 1996-03-12 | 2000-05-10 | 尹维平 | Inorganic oxide electric heating film and the manufacture thereof |
| CN100349498C (en) * | 2003-10-17 | 2007-11-14 | 杨金林 | Electric-heating film and manufacturing method thereof |
| WO2005055662A1 (en) * | 2003-12-02 | 2005-06-16 | Jian Chen | A high temperature, high efficient and multifunction inorganic electric heating film and manufacture method thereof |
| CN100426936C (en) * | 2003-12-02 | 2008-10-15 | 北京明盛电通能源新技术有限公司 | High-temp. high-efficiency multifunction inorganic electrothermal film and manufacturing method thereof |
| CN101668359B (en) * | 2009-08-11 | 2012-10-31 | 罗日良 | Electrothermal film and manufacturing method thereof |
| CN102131316B (en) * | 2010-09-28 | 2013-03-06 | 施吉承 | Formula of conductive film solution of electrothermal film heating tube |
| CN102131316A (en) * | 2010-09-28 | 2011-07-20 | 施吉承 | Formula of conductive film solution of electrothermal film heating tube |
| CN102036432A (en) * | 2010-10-11 | 2011-04-27 | 李瑞勇 | Electric heating membrane and production method thereof |
| CN102036432B (en) * | 2010-10-11 | 2013-06-19 | 李瑞勇 | Electric heating membrane and production method thereof |
| CN102065589B (en) * | 2010-12-27 | 2012-12-26 | 宁波高新区健坤电热技术有限公司 | Method for manufacturing high-temperature resistant transparent electric heating film |
| CN102065589A (en) * | 2010-12-27 | 2011-05-18 | 宁波高新区健坤电热技术有限公司 | Method for manufacturing high-temperature resistant transparent electric heating film |
| CN104091882A (en) * | 2014-07-03 | 2014-10-08 | 陈国栋 | Double-layer high-radiation electrothermal film structure and manufacturing method |
| CN106036370A (en) * | 2016-06-21 | 2016-10-26 | 中山市乾元高科电子有限公司 | Heating self balance heating body |
| CN106686772A (en) * | 2016-12-12 | 2017-05-17 | 深圳市中和纳米技术开发有限公司 | Making method of high-temperature transparent electrothermal film |
| CN107682944A (en) * | 2017-10-24 | 2018-02-09 | 张东升 | A kind of semiconductor thermoelectric film and preparation method thereof |
| CN108337746A (en) * | 2018-01-25 | 2018-07-27 | 陈昭 | High stable heating element and preparation method thereof |
| CN111996499A (en) * | 2020-08-31 | 2020-11-27 | 中能华邦环保科技有限公司 | Evaporation plating equipment for inner and outer membranes of nano tube meteorological furnace |
| CN113140833A (en) * | 2021-04-14 | 2021-07-20 | 星光新能源科技(深圳)有限公司 | Battery module with heating function |
| CN113140833B (en) * | 2021-04-14 | 2022-08-09 | 酷驰(深圳)新能源科技有限公司 | Battery module with heating function |
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| CN1032673C (en) | 1996-08-28 |
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