KR100483817B1 - 표시장치 - Google Patents

표시장치 Download PDF

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Publication number
KR100483817B1
KR100483817B1 KR10-1998-0010438A KR19980010438A KR100483817B1 KR 100483817 B1 KR100483817 B1 KR 100483817B1 KR 19980010438 A KR19980010438 A KR 19980010438A KR 100483817 B1 KR100483817 B1 KR 100483817B1
Authority
KR
South Korea
Prior art keywords
electrode
drain electrode
display device
storage capacitor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR10-1998-0010438A
Other languages
English (en)
Korean (ko)
Other versions
KR19980080689A (ko
Inventor
히사시 오타니
아수시 오가타
타케시 니시
우타카 시오노이리
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR19980080689A publication Critical patent/KR19980080689A/ko
Application granted granted Critical
Publication of KR100483817B1 publication Critical patent/KR100483817B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR10-1998-0010438A 1997-03-26 1998-03-26 표시장치 Expired - Lifetime KR100483817B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP09293497A JP3871764B2 (ja) 1997-03-26 1997-03-26 反射型の表示装置
JP9-092934 1997-03-26

Publications (2)

Publication Number Publication Date
KR19980080689A KR19980080689A (ko) 1998-11-25
KR100483817B1 true KR100483817B1 (ko) 2005-08-05

Family

ID=14068322

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0010438A Expired - Lifetime KR100483817B1 (ko) 1997-03-26 1998-03-26 표시장치

Country Status (3)

Country Link
US (1) US6225966B1 (enExample)
JP (1) JP3871764B2 (enExample)
KR (1) KR100483817B1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003177419A (ja) * 1998-01-30 2003-06-27 Sharp Corp 液晶表示装置における基板および液晶表示装置
JP3378820B2 (ja) * 1999-01-20 2003-02-17 三洋電機株式会社 垂直配向型液晶表示装置
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
TW465122B (en) * 1999-12-15 2001-11-21 Semiconductor Energy Lab Light-emitting device
JP2001174847A (ja) * 1999-12-21 2001-06-29 Nippon Telegr & Teleph Corp <Ntt> 光学素子および該光学素子を用いた表示装置
US6563559B2 (en) * 2000-02-02 2003-05-13 Sanyo Electric Co., Ltd. Reflective liquid crystal display having increase luminance for each display pixel
US6559594B2 (en) 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TW507258B (en) * 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
TW480576B (en) * 2000-05-12 2002-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing same
TWI224806B (en) * 2000-05-12 2004-12-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
JP2002162645A (ja) * 2000-09-14 2002-06-07 Sony Corp 半透過型液晶表示装置
JP3573160B2 (ja) * 2000-12-14 2004-10-06 セイコーエプソン株式会社 電気光学パネルおよび電子機器
JP3520417B2 (ja) * 2000-12-14 2004-04-19 セイコーエプソン株式会社 電気光学パネルおよび電子機器
US6937211B2 (en) * 2001-09-27 2005-08-30 Koninklijke Philips Electronics N.V. Apparatus and system for abstract visual representation of audio signals
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP4371104B2 (ja) * 2002-09-30 2009-11-25 セイコーエプソン株式会社 電気光学装置および電子機器
KR100886268B1 (ko) * 2002-10-18 2009-03-04 하이디스 테크놀로지 주식회사 액정표시장치 및 그 제조방법
US20040164299A1 (en) * 2003-02-24 2004-08-26 Gem Line Technology Co., Ltd. Reflective type thin film transistor display device and methods for fabricating the same
JP4083752B2 (ja) 2005-01-31 2008-04-30 三菱電機株式会社 アクティブマトリクス基板及びその製造方法
JP2006245527A (ja) * 2005-02-07 2006-09-14 Fuji Photo Film Co Ltd 固体撮像素子
JP4663485B2 (ja) 2005-11-04 2011-04-06 三菱電機株式会社 薄膜トランジスタアレイ及びその製造方法、半透過型液晶表示装置
JP4651580B2 (ja) * 2006-05-31 2011-03-16 株式会社 日立ディスプレイズ 液晶表示装置
JP4205144B2 (ja) * 2007-10-12 2009-01-07 三菱電機株式会社 アクティブマトリクス基板及びその製造方法
JP5655567B2 (ja) * 2008-10-06 2015-01-21 旭硝子株式会社 電子デバイス用基板、その製造方法、これを用いた電子デバイス、その製造方法及び有機ｌｅｄ素子用基板
KR102316458B1 (ko) * 2015-03-24 2021-10-25 삼성디스플레이 주식회사 액정 표시장치
JP6762793B2 (ja) * 2016-07-29 2020-09-30 株式会社ジャパンディスプレイ 電子機器及びその製造方法
CN117631357A (zh) * 2022-08-11 2024-03-01 瀚宇彩晶股份有限公司 显示面板

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210330A (ja) * 1981-01-09 1990-08-21 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JPS58139173A (ja) * 1982-02-15 1983-08-18 株式会社東芝 マトリクス形液晶表示装置
JP2859896B2 (ja) * 1988-11-15 1999-02-24 株式会社東芝 液晶表示装置
JPH02245741A (ja) * 1989-03-17 1990-10-01 Matsushita Electric Ind Co Ltd 反射型液晶表示デバイス
JPH032839A (ja) * 1989-05-31 1991-01-09 Matsushita Electric Ind Co Ltd 反射型液晶ライトバルブ素子
JP3078554B2 (ja) * 1989-11-08 2000-08-21 セイコーエプソン株式会社 反射型液晶表示装置
JPH03164716A (ja) * 1989-11-24 1991-07-16 Matsushita Electron Corp 反射型液晶画像表示装置
JPH03175430A (ja) * 1989-12-05 1991-07-30 Nec Corp 反射型液晶表示装置
JP2604867B2 (ja) * 1990-01-11 1997-04-30 松下電器産業株式会社 反射型液晶表示デバイス
JPH03227062A (ja) * 1990-01-31 1991-10-08 Matsushita Electron Corp 薄膜トランジスタアレイ
JP2622183B2 (ja) * 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
JPH0431827A (ja) * 1990-05-29 1992-02-04 Alps Electric Co Ltd 液晶表示素子
JPH0431831A (ja) * 1990-05-29 1992-02-04 Citizen Watch Co Ltd 半導体基板を用いた液晶表示装置
JPH04305627A (ja) * 1991-04-03 1992-10-28 Sharp Corp アクティブマトリクス基板の製造方法
KR970001735B1 (en) * 1991-04-05 1997-02-14 Sharp Kk A liquid crystal display device and a liquid crystal display system using the liquid crystal display device
DE69220643T2 (de) * 1991-09-10 1998-01-22 Sharp Kk Flüssigkristall-Anzeigegerät vom Reflexionstyp und Verfahren zu dessen Herstellung
JPH05188398A (ja) * 1992-01-16 1993-07-30 Canon Inc 液晶表示パネル及び該液晶表示パネルを用いた投写表示装置
JP3172841B2 (ja) * 1992-02-19 2001-06-04 株式会社日立製作所 薄膜トランジスタとその製造方法及び液晶表示装置
JPH05264716A (ja) * 1992-03-18 1993-10-12 Matsushita Electric Ind Co Ltd 携帯型ｇｐｓ受信機
JPH07248508A (ja) * 1994-03-14 1995-09-26 Toshiba Corp 液晶表示装置
JP3097945B2 (ja) * 1994-10-03 2000-10-10 シャープ株式会社 反射型液晶表示装置の製造方法
JP3085633B2 (ja) * 1994-11-08 2000-09-11 シャープ株式会社 反射型液晶表示装置
JP3512496B2 (ja) * 1994-11-25 2004-03-29 株式会社半導体エネルギー研究所 Ｓｏｉ型半導体集積回路の作製方法
JP3439552B2 (ja) * 1994-12-08 2003-08-25 富士通ディスプレイテクノロジーズ株式会社 薄膜トランジスタ基板及び液晶表示装置
JPH08160463A (ja) * 1994-12-09 1996-06-21 Sanyo Electric Co Ltd 反射型液晶表示装置
JPH08220657A (ja) * 1994-12-15 1996-08-30 Nikon Corp 投射装置
JP3307181B2 (ja) * 1995-07-31 2002-07-24 ソニー株式会社 透過型表示装置

Also Published As

Publication number Publication date
JP3871764B2 (ja) 2007-01-24
KR19980080689A (ko) 1998-11-25
US6225966B1 (en) 2001-05-01
JPH10268340A (ja) 1998-10-09

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