KR100479399B1 - 불휘발성 반도체 기억 장치 - Google Patents

불휘발성 반도체 기억 장치 Download PDF

Info

Publication number
KR100479399B1
KR100479399B1 KR10-2002-0054046A KR20020054046A KR100479399B1 KR 100479399 B1 KR100479399 B1 KR 100479399B1 KR 20020054046 A KR20020054046 A KR 20020054046A KR 100479399 B1 KR100479399 B1 KR 100479399B1
Authority
KR
South Korea
Prior art keywords
insulating film
gate
transistor
peripheral circuit
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0054046A
Other languages
English (en)
Korean (ko)
Other versions
KR20030060748A (ko
Inventor
니시오까나호
쯔지나오끼
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20030060748A publication Critical patent/KR20030060748A/ko
Application granted granted Critical
Publication of KR100479399B1 publication Critical patent/KR100479399B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR10-2002-0054046A 2002-01-08 2002-09-07 불휘발성 반도체 기억 장치 Expired - Fee Related KR100479399B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002001138A JP4225728B2 (ja) 2002-01-08 2002-01-08 不揮発性半導体記憶装置の製造方法
JPJP-P-2002-00001138 2002-01-08

Publications (2)

Publication Number Publication Date
KR20030060748A KR20030060748A (ko) 2003-07-16
KR100479399B1 true KR100479399B1 (ko) 2005-03-30

Family

ID=19190577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0054046A Expired - Fee Related KR100479399B1 (ko) 2002-01-08 2002-09-07 불휘발성 반도체 기억 장치

Country Status (4)

Country Link
US (1) US6657249B2 (enrdf_load_stackoverflow)
JP (1) JP4225728B2 (enrdf_load_stackoverflow)
KR (1) KR100479399B1 (enrdf_load_stackoverflow)
TW (1) TWI267981B (enrdf_load_stackoverflow)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005026380A (ja) 2003-06-30 2005-01-27 Toshiba Corp 不揮発性メモリを含む半導体装置及びその製造方法
KR100549591B1 (ko) * 2003-11-05 2006-02-08 매그나칩 반도체 유한회사 비휘발성 메모리 소자 및 그의 제조 방법
US7229880B2 (en) * 2003-11-19 2007-06-12 Promos Technologies Inc. Precision creation of inter-gates insulator
KR100564629B1 (ko) * 2004-07-06 2006-03-28 삼성전자주식회사 이이피롬 소자 및 그 제조 방법
JP4583878B2 (ja) * 2004-10-29 2010-11-17 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2006294751A (ja) * 2005-04-07 2006-10-26 Toshiba Corp 半導体集積回路及びその製造方法
JP4718894B2 (ja) * 2005-05-19 2011-07-06 株式会社東芝 半導体装置の製造方法
US7450431B1 (en) 2005-08-24 2008-11-11 Xilinx, Inc. PMOS three-terminal non-volatile memory element and method of programming
US7687797B1 (en) 2005-08-24 2010-03-30 Xilinx, Inc. Three-terminal non-volatile memory element with hybrid gate dielectric
US7544968B1 (en) 2005-08-24 2009-06-09 Xilinx, Inc. Non-volatile memory cell with charge storage element and method of programming
US7420842B1 (en) 2005-08-24 2008-09-02 Xilinx, Inc. Method of programming a three-terminal non-volatile memory element using source-drain bias
KR100702029B1 (ko) * 2005-09-22 2007-03-30 삼성전자주식회사 플로팅된 드레인측 보조 게이트를 갖는 고전압 모스트랜지스터를 구비하는 비휘발성 메모리 소자들 및 그제조방법들
JP5367755B2 (ja) * 2005-11-15 2013-12-11 株式会社東芝 不揮発性半導体記憶装置の製造方法
JP4810392B2 (ja) 2005-11-15 2011-11-09 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
US20080150005A1 (en) * 2006-12-21 2008-06-26 Spansion Llc Memory system with depletion gate
JP2007201494A (ja) * 2007-03-26 2007-08-09 Toshiba Corp 不揮発性半導体記憶装置
JP2008244009A (ja) * 2007-03-26 2008-10-09 Fujitsu Ltd 半導体装置およびその製造方法
JP4564511B2 (ja) * 2007-04-16 2010-10-20 株式会社東芝 半導体装置及びその製造方法
US7897514B2 (en) * 2008-01-24 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor contact barrier
US8068370B2 (en) * 2008-04-18 2011-11-29 Macronix International Co., Ltd. Floating gate memory device with interpoly charge trapping structure
US20140048888A1 (en) 2012-08-17 2014-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Strained Structure of a Semiconductor Device
US9117525B2 (en) 2012-09-12 2015-08-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
JP2015177187A (ja) * 2014-03-12 2015-10-05 株式会社東芝 不揮発性半導体記憶装置
US9698147B2 (en) 2015-02-25 2017-07-04 Sii Semiconductor Corporation Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112501A (ja) * 1991-11-19 1994-04-22 Samsung Electron Co Ltd 不揮発性半導体メモリ装置及びその製造方法
KR970054103A (ko) * 1995-12-29 1997-07-31 김주용 플래쉬 이이피롬 셀 제조 방법
JP2001210809A (ja) * 2000-01-28 2001-08-03 Toshiba Microelectronics Corp 半導体装置の製造方法
KR20010085679A (ko) * 2000-02-28 2001-09-07 가나이 쓰토무 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03283570A (ja) 1990-03-30 1991-12-13 Fujitsu Ltd 半導体装置及びその製造方法
GB9107952D0 (en) 1991-04-15 1991-05-29 Dow Rheinmuenster Surface crosslinked and surfactant coated absorbent resin particles and method of preparation
KR960012303B1 (ko) * 1992-08-18 1996-09-18 삼성전자 주식회사 불휘발성 반도체메모리장치 및 그 제조방법
US5793081A (en) * 1994-03-25 1998-08-11 Nippon Steel Corporation Nonvolatile semiconductor storage device and method of manufacturing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112501A (ja) * 1991-11-19 1994-04-22 Samsung Electron Co Ltd 不揮発性半導体メモリ装置及びその製造方法
KR970054103A (ko) * 1995-12-29 1997-07-31 김주용 플래쉬 이이피롬 셀 제조 방법
JP2001210809A (ja) * 2000-01-28 2001-08-03 Toshiba Microelectronics Corp 半導体装置の製造方法
KR20010085679A (ko) * 2000-02-28 2001-09-07 가나이 쓰토무 반도체 집적 회로 장치 및 반도체 집적 회로 장치의 제조방법

Also Published As

Publication number Publication date
TWI267981B (en) 2006-12-01
JP2003203999A (ja) 2003-07-18
US20030127681A1 (en) 2003-07-10
JP4225728B2 (ja) 2009-02-18
US6657249B2 (en) 2003-12-02
KR20030060748A (ko) 2003-07-16

Similar Documents

Publication Publication Date Title
KR100479399B1 (ko) 불휘발성 반도체 기억 장치
JP3966707B2 (ja) 半導体装置及びその製造方法
US20060202285A1 (en) Semiconductor device, semiconductor element and method for producing same
KR20030055166A (ko) 반도체 장치 및 그 제조 방법
JP2007281092A (ja) 半導体装置およびその製造方法
JPH1117035A (ja) 不揮発性半導体記憶装置およびその製造方法
JP2005514769A (ja) 不揮発性メモリ及びその形成方法
US10923601B2 (en) Charge trapping split gate device and method of fabricating same
US7808035B2 (en) Semiconductor memory and semiconductor device with nitride memory elements
KR101080489B1 (ko) 절연막을 전하 축적층으로서 사용하는 반도체 기억 장치의 제조 방법
US6828622B2 (en) Nonvolatile semiconductor memory device and its manufacturing method
CN101211973A (zh) 半导体存储器件及其制造方法
JP2009004638A (ja) 半導体記憶装置およびその製造方法
JP4405489B2 (ja) 不揮発性半導体メモリ
US6268247B1 (en) Memory cell of the EEPROM type having its threshold set by implantation, and fabrication method
US6573142B1 (en) Method to fabricate self-aligned source and drain in split gate flash
KR100951981B1 (ko) 반도체 장치 및 그 제조 방법
CN101335305A (zh) 非易失性存储器及其制造方法
JPH0479370A (ja) 不揮発性半導体記憶装置
JP2008187051A (ja) 半導体記憶装置
KR100671615B1 (ko) 낸드 플래쉬 메모리 소자의 제조 방법
JP5982701B2 (ja) 半導体装置および半導体装置の製造方法
JP2005235891A (ja) 不揮発性半導体記憶装置およびその製造方法
JP2007180150A (ja) 不揮発性半導体記憶装置およびその製造方法
KR100475033B1 (ko) 불휘발성 메모리소자 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment
PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment
PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20150224

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20160219

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170319

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170319

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000