KR100464220B1 - 적층 세라믹 전자부품의 제조방법 및 적층 세라믹 전자부품 - Google Patents
적층 세라믹 전자부품의 제조방법 및 적층 세라믹 전자부품 Download PDFInfo
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- KR100464220B1 KR100464220B1 KR10-2002-0058059A KR20020058059A KR100464220B1 KR 100464220 B1 KR100464220 B1 KR 100464220B1 KR 20020058059 A KR20020058059 A KR 20020058059A KR 100464220 B1 KR100464220 B1 KR 100464220B1
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- 239000000919 ceramic Substances 0.000 title claims abstract description 232
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 239000003985 ceramic capacitor Substances 0.000 claims abstract description 37
- 238000010304 firing Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims description 54
- 239000002002 slurry Substances 0.000 claims description 39
- 239000004020 conductor Substances 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 10
- 238000001354 calcination Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 20
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 description 23
- 230000007547 defect Effects 0.000 description 21
- 230000000694 effects Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 101100352919 Caenorhabditis elegans ppm-2 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2311/00—Metals, their alloys or their compounds
- B32B2311/22—Nickel or cobalt
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
- C04B2235/3234—Titanates, not containing zirconia
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3279—Nickel oxides, nickalates, or oxide-forming salts thereof
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
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- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
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Abstract
Description
NiO 첨가량(중량%) | 결함 발생율(개/100개) |
0 | 19 |
0.05 | 0 |
0.10 | 0 |
NiO 첨가량(중량%) | 절연저항 불량 발생율① | 절연저항 불량 발생율② |
0 | 1376ppm | 122ppm |
0.10 | 13ppm | 0ppm |
NiO 첨가량(중량%) | 0 | 0.05 | 0.10 | |
정전용량(nF) n=30 |
평균 | 1462 | 1467 | 1434 |
최대 | 1545 | 1522 | 1475 | |
최소 | 1399 | 1409 | 1397 | |
유전손실 DF(%) n=30 |
평균 | 4.68 | 4.73 | 4.58 |
최대 | 4.98 | 4.94 | 4.84 | |
절연저항(logIR) n=30 |
평균 | 10.40 | 10.55 | 10.37 |
최소 | 9.91 | 9.71 | 9.90 | |
절연파괴전압(V) n=10 |
평균 | 547 | 562 | 546 |
최소 | 513 | 544 | 528 | |
온도특성(%) +20℃ 기준 n=3 |
-40℃ | -53.3 | -51.9 | -55.6 |
최대 | +22.7 | +23.1 | +22.6 | |
+85℃ | -78.9 | -78.6 | -79.1 |
NiO 농도(중량%) | ||
NiO 무첨가 |
내부전극간 | 0.9 |
폭방향 양단부 | 0.1 | |
NiO 0.10중량% 첨가 |
내부전극간 | 0.9 |
폭방향 양단부 | 0.2 |
시료 번호 |
결함 발생율 (개/100개) |
절연저항 불량 발생율① | 절연저항 불량 발생율② |
1 | 0 | 13ppm | 0ppm |
2 | 19 | 1376ppm | 122ppm |
3 | 0 | 20ppm | 0ppm |
Claims (8)
- 복수의 적층된 세라믹층, 및 적층방향에 관해서 중간부에 위치하는 상기 세라믹층 사이의 계면을 따라 각각 연장하는 복수의 내부도체막을 포함하는 적층체를 구비하는 적층 세라믹 전자부품의 제조방법으로서,소성에 의해 상기 세라믹층이 되어야 하는 것으로, 세라믹 분말을 포함하는 복수의 세라믹 그린시트를 준비하는 공정;상기 중간부에 위치하는 상기 세라믹층이 되는 상기 세라믹 그린시트 상에 도전성 금속 성분을 포함하는 내부도체막을 형성하는 공정;상기 내부도체막이 형성된 복수의 상기 세라믹 그린시트를 적층하는 동시에, 그 상하에 상기 내부도체막이 형성되지 않은 외층 부분이 되는 상기 세라믹 그린시트를 적층하고, 그에 의해서 그린 적층체를 얻는 공정;상기 그린 적층체를 소성하는 공정; 을 구비하고,적어도 상기 외층 부분이 되는 상기 세라믹 그린시트는 상기 내부도체막에 포함되는 상기 도전성 금속 성분의 산화물을 포함하고 있는 것을 특징으로 하는 적층 세라믹 전자부품의 제조방법.
- 제 1항에 있어서, 상기 외층 부분이 되는 상기 세라믹 그린시트에만, 상기 도전성 금속 성분의 산화물이 포함되는 것을 특징으로 하는 적층 세라믹 전자부품의 제조방법.
- 제 1항에 있어서, 모든 상기 세라믹 그린시트에, 상기 도전성 금속 성분의 산화물이 포함되는 것을 특징으로 하는 적층 세라믹 전자부품의 제조방법.
- 제 1항 내지 제 3항 중 어느 한 항에 있어서, 상기 도전성 금속 성분의 산화물을 포함하는 상기 세라믹 그린시트에 있어서, 상기 도전성 금속 성분의 산화물은 상기 세라믹 그린시트에 포함되는 상기 세라믹 분말에 대하여, 0.05∼0.20중량% 포함하는 것을 특징으로 하는 적층 세라믹 전자부품의 제조방법.
- 제 1항 내지 제 3항 중 어느 한 항에 있어서, 상기 세라믹 그린시트를 준비하는 공정은 세라믹 원료를 준비하는 공정; 상기 세라믹 원료를 하소하여 상기 세라믹 분말을 얻는 공정; 상기 세라믹 분말을 유기 비히클 중에 분산시켜서 세라믹 슬러리를 제작하는 공정; 상기 세라믹 슬러리를 시트 형상으로 성형하여 상기 세라믹 그린시트를 제작하는 공정;을 구비하고, 상기 도전성 금속 성분의 산화물을 포함하는 상기 세라믹 그린시트에 대해서는 상기 세라믹 슬러리를 제작하는 공정에 있어서, 상기 도전성 금속 성분의 산화물이 첨가되는 것을 특징으로 하는 적층 세라믹 전자부품의 제조방법.
- 제 1항 내지 제 3항 중 어느 한 항에 있어서, 상기 도전성 금속 성분의 산화물은 니켈의 산화물을 포함하는 것을 특징으로 하는 적층 세라믹 전자부품의 제조방법.
- 제 1항 내지 제 3항 중 어느 한 항에 기재된 제조방법에 의해 제조된 것을 특징으로 하는 적층 세라믹 전자부품.
- 제 7항에 있어서, 상기 적층 세라믹 전자부품은 적층 세라믹 콘덴서이며, 상기 내부도체막으로서의 내부전극이, 상기 적층체의 폭방향에 있어서의 양단부 및 상기 적층체의 적층방향에 있어서의 양단부를 제외하는 부분에 형성되고, 상기 적층체의 외표면 상에는 상기 내부전극의 특정한 것에 접속되도록 외부전극이 형성되는 것을 특징으로 하는 적층 세라믹 전자부품.
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JPJP-P-2001-00295973 | 2001-09-27 | ||
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JP2002243234A JP3775366B2 (ja) | 2001-09-27 | 2002-08-23 | 積層セラミック電子部品の製造方法および積層セラミック電子部品 |
JPJP-P-2002-00243234 | 2002-08-23 |
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KR20030026893A KR20030026893A (ko) | 2003-04-03 |
KR100464220B1 true KR100464220B1 (ko) | 2005-01-03 |
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US (1) | US6884308B2 (ko) |
JP (1) | JP3775366B2 (ko) |
KR (1) | KR100464220B1 (ko) |
CN (1) | CN1272814C (ko) |
TW (1) | TWI223292B (ko) |
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US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
WO2006126333A1 (ja) | 2005-05-26 | 2006-11-30 | Murata Manufacturing Co., Ltd. | 積層セラミック電子部品およびその製造方法 |
JP4853048B2 (ja) * | 2006-03-02 | 2012-01-11 | 株式会社村田製作所 | 積層セラミックコンデンサの製造方法 |
CN101517673B (zh) * | 2006-09-22 | 2011-12-21 | 株式会社村田制作所 | 层叠陶瓷电容器 |
JP5609093B2 (ja) * | 2009-12-11 | 2014-10-22 | 株式会社村田製作所 | セラミック電子部品 |
KR102166128B1 (ko) | 2015-12-29 | 2020-10-15 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 적층 세라믹 커패시터의 제조방법 |
JP6955847B2 (ja) * | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6970793B2 (ja) * | 2016-06-20 | 2021-11-24 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
JP6984999B2 (ja) | 2016-06-20 | 2021-12-22 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955845B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955846B2 (ja) * | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6945972B2 (ja) * | 2016-06-20 | 2021-10-06 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955848B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955850B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955849B2 (ja) * | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6970792B2 (ja) * | 2016-06-20 | 2021-11-24 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
JP6838381B2 (ja) | 2016-12-14 | 2021-03-03 | Tdk株式会社 | 積層電子部品 |
JP7098340B2 (ja) * | 2018-01-26 | 2022-07-11 | 太陽誘電株式会社 | 積層セラミックコンデンサおよびその製造方法 |
KR102551219B1 (ko) | 2018-08-29 | 2023-07-03 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 제조 방법 |
JP2020068222A (ja) * | 2018-10-22 | 2020-04-30 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP7269736B2 (ja) * | 2019-01-08 | 2023-05-09 | 太陽誘電株式会社 | セラミック電子部品およびその製造方法 |
JP7183051B2 (ja) * | 2019-01-22 | 2022-12-05 | 太陽誘電株式会社 | 積層セラミックコンデンサ及び積層セラミックコンデンサの製造方法 |
KR102438839B1 (ko) * | 2020-05-19 | 2022-09-01 | 삼화콘덴서공업주식회사 | 적층형 커패시터 및 이의 제조방법 |
JP2022057916A (ja) * | 2020-09-30 | 2022-04-11 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP7363732B2 (ja) * | 2020-09-30 | 2023-10-18 | 株式会社村田製作所 | 積層セラミックコンデンサ |
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JP2529411B2 (ja) * | 1989-09-25 | 1996-08-28 | 松下電器産業株式会社 | 誘電体磁器組成物とそれを用いた積層セラミックコンデンサとその製造方法 |
US5659456A (en) * | 1995-01-12 | 1997-08-19 | Murata Manufacturing Co., Ltd. | Monolithic ceramic capacitors |
EP0734031B1 (en) * | 1995-03-24 | 2004-06-09 | TDK Corporation | Multilayer varistor |
US5646081A (en) * | 1995-04-12 | 1997-07-08 | Murata Manufacturing Co., Ltd. | Non-reduced dielectric ceramic compositions |
JP3024536B2 (ja) * | 1995-12-20 | 2000-03-21 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP3039426B2 (ja) * | 1997-03-04 | 2000-05-08 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP3908458B2 (ja) * | 1999-12-28 | 2007-04-25 | Tdk株式会社 | 誘電体磁器組成物の製造方法 |
JP3361091B2 (ja) * | 2000-06-20 | 2003-01-07 | ティーディーケイ株式会社 | 誘電体磁器および電子部品 |
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2002
- 2002-08-23 JP JP2002243234A patent/JP3775366B2/ja not_active Expired - Lifetime
- 2002-09-16 TW TW091121139A patent/TWI223292B/zh not_active IP Right Cessation
- 2002-09-25 KR KR10-2002-0058059A patent/KR100464220B1/ko active IP Right Grant
- 2002-09-27 US US10/256,138 patent/US6884308B2/en not_active Expired - Lifetime
- 2002-09-27 CN CNB021482357A patent/CN1272814C/zh not_active Expired - Lifetime
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JPH04225208A (ja) * | 1990-12-26 | 1992-08-14 | Taiyo Yuden Co Ltd | セラミックコンデンサ用誘電体磁器組成物 |
Also Published As
Publication number | Publication date |
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JP2003173925A (ja) | 2003-06-20 |
CN1421881A (zh) | 2003-06-04 |
JP3775366B2 (ja) | 2006-05-17 |
KR20030026893A (ko) | 2003-04-03 |
TWI223292B (en) | 2004-11-01 |
CN1272814C (zh) | 2006-08-30 |
US6884308B2 (en) | 2005-04-26 |
US20030062112A1 (en) | 2003-04-03 |
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