KR100430189B1 - 플라즈마 에칭 방법 - Google Patents

플라즈마 에칭 방법 Download PDF

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Publication number
KR100430189B1
KR100430189B1 KR10-1999-7003072A KR19997003072A KR100430189B1 KR 100430189 B1 KR100430189 B1 KR 100430189B1 KR 19997003072 A KR19997003072 A KR 19997003072A KR 100430189 B1 KR100430189 B1 KR 100430189B1
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KR
South Korea
Prior art keywords
gas
etching
plasma
layer
mixing ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1999-7003072A
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English (en)
Korean (ko)
Other versions
KR20000049010A (ko
Inventor
야츠다고이치
니시아라데츠야
이나자와고우이치로
오카모토신
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20000049010A publication Critical patent/KR20000049010A/ko
Application granted granted Critical
Publication of KR100430189B1 publication Critical patent/KR100430189B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR10-1999-7003072A 1996-10-11 1997-10-09 플라즈마 에칭 방법 Expired - Fee Related KR100430189B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-289068 1996-10-11
JP28906896 1996-10-11

Publications (2)

Publication Number Publication Date
KR20000049010A KR20000049010A (ko) 2000-07-25
KR100430189B1 true KR100430189B1 (ko) 2004-05-03

Family

ID=17738417

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1999-7003072A Expired - Fee Related KR100430189B1 (ko) 1996-10-11 1997-10-09 플라즈마 에칭 방법

Country Status (7)

Country Link
US (1) US6488863B2 (https=)
EP (1) EP0945896B1 (https=)
JP (1) JP3808902B2 (https=)
KR (1) KR100430189B1 (https=)
DE (1) DE69733962T2 (https=)
TW (1) TW366531B (https=)
WO (1) WO1998016950A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3066007B2 (ja) * 1998-06-24 2000-07-17 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
US6297163B1 (en) * 1998-09-30 2001-10-02 Lam Research Corporation Method of plasma etching dielectric materials
TW486733B (en) * 1999-12-28 2002-05-11 Toshiba Corp Dry etching method and manufacturing method of semiconductor device for realizing high selective etching
US6716759B2 (en) 2001-05-11 2004-04-06 Micron Technology, Inc. Etch of silicon nitride selective to silicon and silicon dioxide useful during the formation of a semiconductor device
WO2003019618A2 (en) * 2001-08-27 2003-03-06 Matsushita Electric Industrial Co., Ltd. Plasma treating apparatus and plasma treating method
JP2004055610A (ja) 2002-07-16 2004-02-19 Fujitsu Ltd 半導体装置の製造方法
KR100497609B1 (ko) * 2003-02-28 2005-07-01 삼성전자주식회사 실리콘 질화막 식각방법
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
JP4541193B2 (ja) * 2005-03-08 2010-09-08 東京エレクトロン株式会社 エッチング方法
WO2011108663A1 (ja) * 2010-03-04 2011-09-09 東京エレクトロン株式会社 プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置
KR101276258B1 (ko) * 2011-11-21 2013-06-20 피에스케이 주식회사 반도체 제조 장치 및 반도체 제조 방법
KR101276262B1 (ko) * 2011-11-21 2013-06-20 피에스케이 주식회사 반도체 제조 장치 및 반도체 제조 방법
US9728445B2 (en) * 2014-01-22 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming conducting via and damascene structure
JP6428466B2 (ja) 2014-06-23 2018-11-28 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
JP6556046B2 (ja) * 2015-12-17 2019-08-07 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP6643950B2 (ja) * 2016-05-23 2020-02-12 東京エレクトロン株式会社 プラズマ処理方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3420347A1 (de) * 1983-06-01 1984-12-06 Hitachi, Ltd., Tokio/Tokyo Gas und verfahren zum selektiven aetzen von siliciumnitrid
JPS60115232A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd ドライエッチング用ガス
JPH07118474B2 (ja) * 1984-12-17 1995-12-18 ソニー株式会社 エツチングガス及びこれを用いたエツチング方法
JPS644482A (en) * 1987-06-26 1989-01-09 Applied Materials Japan High-selectivity dry etching method for oxide film on silicon
US5188704A (en) * 1989-10-20 1993-02-23 International Business Machines Corporation Selective silicon nitride plasma etching
EP0424299A3 (en) * 1989-10-20 1991-08-28 International Business Machines Corporation Selective silicon nitride plasma etching
US5002631A (en) 1990-03-09 1991-03-26 At&T Bell Laboratories Plasma etching apparatus and method
JP3092185B2 (ja) * 1990-07-30 2000-09-25 セイコーエプソン株式会社 半導体装置の製造方法
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
US5432107A (en) * 1992-11-04 1995-07-11 Matsushita Electric Industrial Co., Ltd. Semiconductor fabricating method forming channel stopper with diagonally implanted ions
US5605857A (en) * 1993-02-12 1997-02-25 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells
JP3272442B2 (ja) * 1993-02-19 2002-04-08 住友金属工業株式会社 半導体装置の製造方法
JPH07161702A (ja) * 1993-10-29 1995-06-23 Applied Materials Inc 酸化物のプラズマエッチング方法
KR950033669A (ko) * 1994-01-27 1995-12-26 제임스 조셉 드롱 산화물, 규화물 및 실리콘에 대하여 선택성을 갖는 질화물 식각공정
US5716534A (en) 1994-12-05 1998-02-10 Tokyo Electron Limited Plasma processing method and plasma etching method
JP3778299B2 (ja) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5786276A (en) * 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6051504A (en) * 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma
JPH11186236A (ja) * 1997-12-24 1999-07-09 Mitsubishi Electric Corp エッチング方法
US6033962A (en) * 1998-07-24 2000-03-07 Vanguard International Semiconductor Corporation Method of fabricating sidewall spacers for a self-aligned contact hole

Also Published As

Publication number Publication date
DE69733962D1 (de) 2005-09-15
DE69733962T2 (de) 2006-05-24
JP3808902B2 (ja) 2006-08-16
KR20000049010A (ko) 2000-07-25
EP0945896A1 (en) 1999-09-29
EP0945896A4 (https=) 1999-09-29
EP0945896B1 (en) 2005-08-10
TW366531B (en) 1999-08-11
US20020084254A1 (en) 2002-07-04
US6488863B2 (en) 2002-12-03
WO1998016950A1 (en) 1998-04-23

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