KR100414331B1 - 비환원성 유전체 세라믹 및 이것을 사용한 모놀리식 세라믹 커패시터 - Google Patents
비환원성 유전체 세라믹 및 이것을 사용한 모놀리식 세라믹 커패시터 Download PDFInfo
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- KR100414331B1 KR100414331B1 KR10-2001-0018466A KR20010018466A KR100414331B1 KR 100414331 B1 KR100414331 B1 KR 100414331B1 KR 20010018466 A KR20010018466 A KR 20010018466A KR 100414331 B1 KR100414331 B1 KR 100414331B1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
Abstract
Description
Claims (6)
- 페로브스카이트 결정상을 갖는 주성분으로, 식 (Ca1-a-b-cSraBabMgc)m(Zr1-w-x-y-zTiwMnxNiyHfz)O3로 표현되며, 0≤a<0.5, 0≤b<0.5, 0≤c<0.05, 0≤a+b+c<0.5, 0.98≤m<1.03, 0≤w<0.6, 0≤x<0.05, 0≤y<0.05, 0≤z<0.3, 0≤x+y≤0.05, 0≤w+x+y+z<0.6을 만족하는 주성분; 및(Si, T)O2-MO-XO로 표현되며, 상기 T는 Ti 및 Zr 중에서 선택되는 적어도 하나이고, 상기 MO는 MnO 및 NiO 중에서 선택되는 적어도 하나이고, 또한 상기 XO는 BaO, SrO, CaO 및 MgO 중에서 선택되는 적어도 하나인 것을 특징으로 하는 복합 산화물; 및 (Si, T)O2-(Mn,M)O-Al2O3로 표현되며, 상기 T는 Ti 및 Zr 중에서 선택되는 적어도 하나이고, 상기 M은 Ni, Ba, Sr, Ca, 및 Mg 중에서 선택되는 적어도 하나인 것을 특징으로 하는 복합 산화물;로 이루어지는 군 중 하나에서 선택된 적어도 1종의 복합 산화물;을 포함하며,CuKα X선 회절 패턴에 있어서 2θ=25∼35°에 나타나는 페로브스카이트 결정상에 할당된 최대 피크의 강도에 대하여 상기 페로브스카이트 결정상 이외의 결정상의 최대 피크의 강도의 비가 5%이하인 것을 특징으로 하는 비환원성 유전체 세라믹.
- 제 1항에 있어서, 상기 복합 산화물 (Si, T)O2-MO-XO는, 식 α(Si1-μ-νTiμZrν)O2-β(Mn1-ξNiξ)O-γXO로 표현되며, 여기서 상기 α, β 및 γ는 몰%이고, XO는 BaO, SrO, CaO 및 MgO에서 선택된 적어도 하나이고, 또한, 0≤μ<0.5, 0≤ν<0.7, 0≤ξ≤1.0, 0≤μ+ν≤0.7의 관계를 만족하며,상기 복합 산화물내의 (Si1-μ-νTiμZrν)O2의 함량, (Mn1-ξNiξ)O의 함량 및 XO의 함량은 3원도에 있어서, A(α=25.0, β=75.0,γ=0), B(α=100.0, β=0, γ=0), C(α=20.0, β=0, γ=80.0), D(α=5.0, β=15.0,γ=80.0)으로 표시되는 점들로 둘러싸인 영역내에서 선 AB, AD 및 DC는 포함하고, 선 BC는 제외하는 영역 내에 있는 것을 특징으로 하는 비환원성 유전체 세라믹.
- 제 1항에 있어서, 상기 복합 산화물 (Si, T)O2-(Mn,M)O-Al2O3는 식 α(Si1-μTiμ)O2-β(Mn1-νMν)O-γAl2O3로 표현되며, 여기서 상기 α, β 및 γ는 몰%이고, T는 Ti 및 Zr 중에서 선택된 적어도 하나이고, M은 Ni, Ba, Sr, Ca 및 Mg에서 선택된 적어도 하나이고, 또한, 0≤μ<0.5, 0≤ν<0.7의 관계를 만족하며,상기 복합 산화물내의 (Si1-μTiμ)O2의 함량, (Mn1-νMν)O의 함량 및 Al2O3의함량은 3원도에 있어서, A(α=80.0, β=20.0,γ=0), B(α=10.0, β=90.0, γ=0), C(α=10.0, β=20.0, γ=70.0), D(α=30.0, β=0, γ=70.0) 및 E(α=80.0, β=0, γ=20.0)으로 표시되는 점들로 둘러싸인 영역내에서 선 AE, BC 및 CD는 포함하고, 선 AB 및 ED는 제외하는 영역 내에 있는 것을 특징으로 하는 비환원성 유전체 세라믹.
- 복수의 유전체 세라믹층;상기 복수의 유전체 세라믹층 사이에 형성된 내부 전극; 및상기 내부 전극에 전기적으로 접속된 외부 전극;을 포함하는 적층 세라믹 커패시터로,상기 복수의 유전체 세라믹층이 각각 제 1항 내지 제 3항 중의 어느 한 항에 기재된 비환원성 유전체 세라믹을 포함하며, 상기 내부 전극이 주성분으로 비금속을 포함하는 것을 특징으로 하는 모놀리식 세라믹 커패시터.
- 제 4항에 있어서, 상기 외부 전극의 표면에 형성된 도금층을 더 포함하는 것을 특징으로 하는 모놀리식 세라믹 커패시터.
- 제 4항 또는 제 5항에 있어서, 상기 비금속은 Ni, Ni합금, Cu 및 Cu합금으로 이루어진 군에서 선택된 하나인 것을 특징으로 하는 모놀리식 세라믹 커패시터.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2000-106906 | 2000-04-07 | ||
JP2000106906 | 2000-04-07 | ||
JP2001074810A JP3470703B2 (ja) | 2000-04-07 | 2001-03-15 | 非還元性誘電体セラミックおよびそれを用いた積層セラミックコンデンサ、ならびに非還元性誘電体セラミックの製造方法 |
JP2001-074810 | 2001-03-15 |
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KR20010090765A KR20010090765A (ko) | 2001-10-19 |
KR100414331B1 true KR100414331B1 (ko) | 2004-01-07 |
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KR10-2001-0018466A KR100414331B1 (ko) | 2000-04-07 | 2001-04-07 | 비환원성 유전체 세라믹 및 이것을 사용한 모놀리식 세라믹 커패시터 |
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Country | Link |
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US (1) | US6396681B2 (ko) |
JP (1) | JP3470703B2 (ko) |
KR (1) | KR100414331B1 (ko) |
CN (1) | CN1145596C (ko) |
FR (1) | FR2807425B1 (ko) |
GB (1) | GB2361916B (ko) |
TW (1) | TW514629B (ko) |
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JP3503568B2 (ja) * | 2000-04-07 | 2004-03-08 | 株式会社村田製作所 | 非還元性誘電体セラミック及びそれを用いた積層セラミックコンデンサ |
KR100444229B1 (ko) * | 2001-12-27 | 2004-08-16 | 삼성전기주식회사 | 내환원성 유전체 자기 조성물 |
JP4506084B2 (ja) | 2002-04-16 | 2010-07-21 | 株式会社村田製作所 | 非還元性誘電体セラミックおよびその製造方法ならびに積層セラミックコンデンサ |
EP1580179A4 (en) * | 2002-12-24 | 2009-01-14 | Tdk Corp | DIELECTRIC PORCELAIN COMPOSITION, ELECTRONIC COMPONENT, AND METHODS FOR MAKING THE SAME |
JP4267438B2 (ja) * | 2003-12-18 | 2009-05-27 | Tdk株式会社 | 誘電体磁器組成物、電子部品及びこれらの製造方法 |
US7923395B2 (en) * | 2005-04-07 | 2011-04-12 | Kemet Electronics Corporation | C0G multi-layered ceramic capacitor |
US20060229188A1 (en) * | 2005-04-07 | 2006-10-12 | Randall Michael S | C0G multi-layered ceramic capacitor |
US7172985B2 (en) * | 2005-06-07 | 2007-02-06 | Kemet Electronics Corporation | Dielectric ceramic capacitor comprising non-reducible dielectric |
JP4784171B2 (ja) * | 2005-06-24 | 2011-10-05 | Tdk株式会社 | 焼結助剤、誘電体磁器組成物の製造方法及び電子部品の製造方法 |
US8350657B2 (en) * | 2005-06-30 | 2013-01-08 | Derochemont L Pierre | Power management module and method of manufacture |
JP5103761B2 (ja) * | 2005-08-26 | 2012-12-19 | Tdk株式会社 | 電子部品、誘電体磁器組成物およびその製造方法 |
JP2007084418A (ja) * | 2005-08-26 | 2007-04-05 | Tdk Corp | 電子部品、誘電体磁器組成物およびその製造方法 |
JP4678022B2 (ja) * | 2007-11-26 | 2011-04-27 | Tdk株式会社 | 誘電体磁器組成物の製造方法 |
JP4561922B2 (ja) * | 2008-03-31 | 2010-10-13 | Tdk株式会社 | 誘電体磁器組成物、電子部品およびこれらの製造方法 |
CN101786866B (zh) * | 2009-12-22 | 2012-12-05 | 广东风华高新科技股份有限公司 | 一种抗还原性铜内电极高频低温烧结陶瓷介质材料 |
CN101786864B (zh) * | 2009-12-22 | 2012-12-05 | 广东风华高新科技股份有限公司 | 一种与镍内电极匹配的陶瓷介质材料及所得电容器的制备方法 |
JP5418323B2 (ja) | 2010-03-15 | 2014-02-19 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
CN101913863B (zh) * | 2010-07-23 | 2013-07-03 | 广东风华高新科技股份有限公司 | 一种与镍内电极匹配的陶瓷介质材料 |
JP5751259B2 (ja) | 2011-01-21 | 2015-07-22 | 株式会社村田製作所 | 積層セラミックコンデンサおよび積層セラミックコンデンサの製造方法 |
WO2014024527A1 (ja) * | 2012-08-09 | 2014-02-13 | 株式会社村田製作所 | 積層セラミックコンデンサおよびその製造方法 |
CN102964122A (zh) * | 2012-11-23 | 2013-03-13 | 潮州三环(集团)股份有限公司 | 介电陶瓷组合物及其电子元器件制作方法 |
JP6089770B2 (ja) * | 2013-02-25 | 2017-03-08 | Tdk株式会社 | 誘電体磁器組成物および電子部品 |
JP2015195342A (ja) * | 2014-03-28 | 2015-11-05 | Tdk株式会社 | 誘電体組成物および電子部品 |
TWI648240B (zh) * | 2017-10-27 | 2019-01-21 | 信昌電子陶瓷股份有限公司 | Low dielectric constant dielectric porcelain powder composition which is ultra-low temperature sintered in a reducing atmosphere and Preparation method and temperature-compensated multilayer ceramic capacitor thereof |
JP6938345B2 (ja) * | 2017-11-17 | 2021-09-22 | キヤノン株式会社 | トナー |
JP7176494B2 (ja) | 2019-08-28 | 2022-11-22 | 株式会社村田製作所 | 積層型電子部品 |
JP7327065B2 (ja) * | 2019-10-01 | 2023-08-16 | Tdk株式会社 | 誘電体組成物および電子部品 |
JP2021150300A (ja) * | 2020-03-16 | 2021-09-27 | 株式会社村田製作所 | 積層セラミックコンデンサ |
CN111620680B (zh) * | 2020-06-04 | 2022-02-11 | 山东国瓷功能材料股份有限公司 | 一种毫米波器件用陶瓷材料及其制备方法与应用 |
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JP3503568B2 (ja) * | 2000-04-07 | 2004-03-08 | 株式会社村田製作所 | 非還元性誘電体セラミック及びそれを用いた積層セラミックコンデンサ |
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- 2001-03-15 JP JP2001074810A patent/JP3470703B2/ja not_active Expired - Lifetime
- 2001-03-20 GB GB0106937A patent/GB2361916B/en not_active Expired - Lifetime
- 2001-04-04 TW TW090108124A patent/TW514629B/zh not_active IP Right Cessation
- 2001-04-05 CN CNB011163119A patent/CN1145596C/zh not_active Expired - Lifetime
- 2001-04-06 US US09/827,653 patent/US6396681B2/en not_active Expired - Lifetime
- 2001-04-06 FR FR0104701A patent/FR2807425B1/fr not_active Expired - Lifetime
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Publication number | Publication date |
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FR2807425B1 (fr) | 2006-02-10 |
CN1145596C (zh) | 2004-04-14 |
JP2001351828A (ja) | 2001-12-21 |
GB2361916B (en) | 2002-10-16 |
FR2807425A1 (fr) | 2001-10-12 |
CN1317459A (zh) | 2001-10-17 |
GB0106937D0 (en) | 2001-05-09 |
GB2361916A (en) | 2001-11-07 |
US20010040784A1 (en) | 2001-11-15 |
TW514629B (en) | 2002-12-21 |
US6396681B2 (en) | 2002-05-28 |
KR20010090765A (ko) | 2001-10-19 |
JP3470703B2 (ja) | 2003-11-25 |
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