KR100408412B1 - 전원전압의 변동을 감지하는 데이터 출력 버퍼 - Google Patents

전원전압의 변동을 감지하는 데이터 출력 버퍼 Download PDF

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Publication number
KR100408412B1
KR100408412B1 KR10-2001-0031020A KR20010031020A KR100408412B1 KR 100408412 B1 KR100408412 B1 KR 100408412B1 KR 20010031020 A KR20010031020 A KR 20010031020A KR 100408412 B1 KR100408412 B1 KR 100408412B1
Authority
KR
South Korea
Prior art keywords
circuit
output
power supply
signal
power
Prior art date
Application number
KR10-2001-0031020A
Other languages
English (en)
Korean (ko)
Other versions
KR20020092117A (ko
Inventor
임종형
강경우
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR10-2001-0031020A priority Critical patent/KR100408412B1/ko
Priority to US10/157,207 priority patent/US6696860B2/en
Priority to TW091111726A priority patent/TW548899B/zh
Priority to JP2002160500A priority patent/JP4111753B2/ja
Publication of KR20020092117A publication Critical patent/KR20020092117A/ko
Application granted granted Critical
Publication of KR100408412B1 publication Critical patent/KR100408412B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00323—Delay compensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Manipulation Of Pulses (AREA)
  • Dram (AREA)
KR10-2001-0031020A 2001-06-02 2001-06-02 전원전압의 변동을 감지하는 데이터 출력 버퍼 KR100408412B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR10-2001-0031020A KR100408412B1 (ko) 2001-06-02 2001-06-02 전원전압의 변동을 감지하는 데이터 출력 버퍼
US10/157,207 US6696860B2 (en) 2001-06-02 2002-05-29 Variable voltage data buffers
TW091111726A TW548899B (en) 2001-06-02 2002-05-31 Variable voltage data buffers
JP2002160500A JP4111753B2 (ja) 2001-06-02 2002-05-31 データバッファ回路およびデータ出力バッファ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0031020A KR100408412B1 (ko) 2001-06-02 2001-06-02 전원전압의 변동을 감지하는 데이터 출력 버퍼

Publications (2)

Publication Number Publication Date
KR20020092117A KR20020092117A (ko) 2002-12-11
KR100408412B1 true KR100408412B1 (ko) 2003-12-06

Family

ID=19710333

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0031020A KR100408412B1 (ko) 2001-06-02 2001-06-02 전원전압의 변동을 감지하는 데이터 출력 버퍼

Country Status (4)

Country Link
US (1) US6696860B2 (ja)
JP (1) JP4111753B2 (ja)
KR (1) KR100408412B1 (ja)
TW (1) TW548899B (ja)

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TW548895B (en) * 2002-02-22 2003-08-21 Winbond Electronics Corp Differential output driving apparatus
US6980035B1 (en) * 2003-03-18 2005-12-27 Xilinx, Inc. Auto-detect level shifter for multiple output voltage standards
DE10339047B4 (de) * 2003-08-25 2006-10-26 Infineon Technologies Ag Treiber-Einrichtung, insbesondere für ein Halbleiter-Bauelement, sowie Verfahren zum Betreiben einer Treiber-Einrichtung
US20050083766A1 (en) * 2003-10-21 2005-04-21 Infineon Technologies North America Corp. Random access memory having self-adjusting off-chip driver
US7005903B2 (en) * 2003-12-02 2006-02-28 Intel Corporation Output buffer with adjustment of signal transitions
US7425849B2 (en) * 2004-12-31 2008-09-16 Stmicroelectronics Pvt. Ltd. Low noise output buffer capable of operating at high speeds
JP4158787B2 (ja) * 2005-06-14 2008-10-01 セイコーエプソン株式会社 半導体集積回路
US7183817B2 (en) * 2005-06-29 2007-02-27 Freescale Semiconductor, Inc. High speed output buffer with AC-coupled level shift and DC level detection and correction
US20070063738A1 (en) * 2005-09-16 2007-03-22 Fischer Timothy C CMOS logic circuitry
KR100801031B1 (ko) * 2006-08-11 2008-02-04 삼성전자주식회사 레벨 쉬프팅 회로 및 레벨 쉬프팅 방법
JP4945229B2 (ja) * 2006-12-06 2012-06-06 パナソニック株式会社 電子装置
KR101174846B1 (ko) * 2007-08-17 2012-08-20 삼성전자주식회사 레벨 시프터 및 이를 이용한 오프 칩 드라이버를 구비하는반도체 장치
JP2009231891A (ja) * 2008-03-19 2009-10-08 Nec Electronics Corp 半導体装置
TW201032476A (en) * 2009-02-18 2010-09-01 Etron Technology Inc Signal converting device
CN101771342A (zh) * 2010-02-10 2010-07-07 钰创科技股份有限公司 转换装置
US8817550B1 (en) * 2011-12-02 2014-08-26 Gsi Technology, Inc. Systems and methods of semiconductor memory devices including features of output buffer initialization circuit(s) and/or multiple power-up detection/handling
CN103944553B (zh) * 2014-04-18 2017-10-24 京东方科技集团股份有限公司 一种输出缓冲器、栅极驱动电路及其控制方法
US9473142B2 (en) 2014-12-12 2016-10-18 Mediatek Inc. Method for performing signal driving control in an electronic device with aid of driving control signals, and associated apparatus
KR20160105091A (ko) * 2015-02-27 2016-09-06 에스케이하이닉스 주식회사 터미네이션 회로, 이를 포함하는 인터페이스 회로 및 시스템
GB2545408B (en) 2015-12-10 2019-11-20 Advanced Risc Mach Ltd Data buffer
CN110838316B (zh) * 2018-08-16 2023-04-18 华邦电子股份有限公司 芯片外驱动器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01238217A (ja) * 1988-03-18 1989-09-22 Toshiba Corp 半導体集積回路の誤動作防止回路
US5218239A (en) * 1991-10-03 1993-06-08 National Semiconductor Corporation Selectable edge rate cmos output buffer circuit
US5841305A (en) * 1997-03-20 1998-11-24 Cypress Semiconductor Corp. Circuit and method for adjusting duty cycles
KR100278651B1 (ko) 1997-06-27 2001-03-02 윤종용 프로그래머블출력드라이버및이를구비하는반도체메모리장치
KR20000003736A (ko) 1998-06-29 2000-01-25 윤종용 반도체 메모리 장치의 스큐 감소 회로
US6157204A (en) * 1998-08-05 2000-12-05 Micron Technology, Inc. Buffer with adjustable slew rate and a method of providing an adjustable slew rate

Also Published As

Publication number Publication date
KR20020092117A (ko) 2002-12-11
TW548899B (en) 2003-08-21
JP2003078406A (ja) 2003-03-14
JP4111753B2 (ja) 2008-07-02
US6696860B2 (en) 2004-02-24
US20020180483A1 (en) 2002-12-05

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