KR100388585B1 - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents

반도체 장치 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR100388585B1
KR100388585B1 KR10-2001-0032296A KR20010032296A KR100388585B1 KR 100388585 B1 KR100388585 B1 KR 100388585B1 KR 20010032296 A KR20010032296 A KR 20010032296A KR 100388585 B1 KR100388585 B1 KR 100388585B1
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KR
South Korea
Prior art keywords
substrate
oxide film
semiconductor device
film
groove
Prior art date
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Expired - Fee Related
Application number
KR10-2001-0032296A
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English (en)
Korean (ko)
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KR20020027161A (ko
Inventor
구로이다까시
우에노슈이찌
호리따가쯔유끼
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20020027161A publication Critical patent/KR20020027161A/ko
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H10W10/0147—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape the shapes being altered by a local oxidation of silicon process, e.g. trench corner rounding by LOCOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR10-2001-0032296A 2000-10-04 2001-06-09 반도체 장치 및 반도체 장치의 제조 방법 Expired - Fee Related KR100388585B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-304372 2000-10-04
JP2000304372A JP4832629B2 (ja) 2000-10-04 2000-10-04 半導体装置

Publications (2)

Publication Number Publication Date
KR20020027161A KR20020027161A (ko) 2002-04-13
KR100388585B1 true KR100388585B1 (ko) 2003-06-25

Family

ID=18785428

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0032296A Expired - Fee Related KR100388585B1 (ko) 2000-10-04 2001-06-09 반도체 장치 및 반도체 장치의 제조 방법

Country Status (4)

Country Link
US (2) US6541825B2 (https=)
JP (1) JP4832629B2 (https=)
KR (1) KR100388585B1 (https=)
TW (1) TW490855B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4832629B2 (ja) * 2000-10-04 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
US7248559B2 (en) 2001-10-17 2007-07-24 Nortel Networks Limited Scattered pilot pattern and channel estimation method for MIMO-OFDM systems
DE10311312B4 (de) * 2003-03-14 2007-08-16 Infineon Technologies Ag Isolatorstruktur und Verfahren zur Erzeugung von Isolatorstrukturen in einem Halbleitersubstrat
JP4578785B2 (ja) * 2003-05-21 2010-11-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2005277024A (ja) * 2004-03-24 2005-10-06 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US7129559B2 (en) * 2004-04-09 2006-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage semiconductor device utilizing a deep trench structure
US20070235783A9 (en) * 2005-07-19 2007-10-11 Micron Technology, Inc. Semiconductor constructions, memory arrays, electronic systems, and methods of forming semiconductor constructions
US7772672B2 (en) 2005-09-01 2010-08-10 Micron Technology, Inc. Semiconductor constructions
KR100713924B1 (ko) * 2005-12-23 2007-05-07 주식회사 하이닉스반도체 돌기형 트랜지스터 및 그의 형성방법
US7799694B2 (en) 2006-04-11 2010-09-21 Micron Technology, Inc. Methods of forming semiconductor constructions
US7670888B2 (en) * 2007-04-11 2010-03-02 Texas Instruments Incorporated Low noise JFET
US7906390B2 (en) * 2007-07-20 2011-03-15 International Business Machines Corporation Thin gate electrode CMOS devices and methods of fabricating same
US8811339B2 (en) * 2008-07-07 2014-08-19 Blackberry Limited Handover schemes for wireless systems
JP5629450B2 (ja) * 2009-10-16 2014-11-19 キヤノン株式会社 半導体素子及び半導体素子の形成方法
US20120015474A1 (en) * 2010-07-19 2012-01-19 Yung-Chun Wu Method for fabricating silicon heterojunction solar cells
JP2014007310A (ja) * 2012-06-26 2014-01-16 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
US11322357B2 (en) * 2020-03-02 2022-05-03 Globalfoundries U.S. Inc. Buried damage layers for electrical isolation
CN113066726B (zh) * 2021-03-19 2021-11-16 弘大芯源(深圳)半导体有限公司 一种场效应晶体管的实现方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199376A (ja) 1984-10-19 1986-05-17 Sharp Corp 半導体装置の製造方法
JP2955459B2 (ja) * 1993-12-20 1999-10-04 株式会社東芝 半導体装置の製造方法
JPH1065153A (ja) * 1996-08-15 1998-03-06 Fujitsu Ltd 半導体装置及びその製造方法
JPH10189951A (ja) 1996-12-26 1998-07-21 Sanyo Electric Co Ltd 半導体装置の製造方法
JP3519571B2 (ja) 1997-04-11 2004-04-19 株式会社ルネサステクノロジ 半導体装置の製造方法
JPH118387A (ja) * 1997-06-18 1999-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH1131742A (ja) * 1997-07-14 1999-02-02 Mitsubishi Electric Corp 半導体装置の製造方法
JP3519579B2 (ja) 1997-09-09 2004-04-19 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6025232A (en) * 1997-11-12 2000-02-15 Micron Technology, Inc. Methods of forming field effect transistors and related field effect transistor constructions
JP2000150882A (ja) * 1998-09-04 2000-05-30 Toshiba Corp Ｍｉｓ型半導体装置及びその製造方法
JP2000082808A (ja) * 1998-09-04 2000-03-21 Toshiba Corp 半導体装置及びその製造方法
JP3415459B2 (ja) * 1998-12-07 2003-06-09 株式会社東芝 半導体装置及びその製造方法
US6287920B1 (en) * 1999-09-07 2001-09-11 Texas Instruments Incorporated Method of making multiple threshold voltage integrated of circuit transistors
US6277710B1 (en) * 1999-11-15 2001-08-21 Chartered Semiconductor Manufacturing Ltd. Method of forming shallow trench isolation
JP4832629B2 (ja) * 2000-10-04 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20020038901A1 (en) 2002-04-04
US6841440B2 (en) 2005-01-11
US6541825B2 (en) 2003-04-01
US20030143810A1 (en) 2003-07-31
TW490855B (en) 2002-06-11
JP4832629B2 (ja) 2011-12-07
JP2002110976A (ja) 2002-04-12
KR20020027161A (ko) 2002-04-13

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