KR100305665B1 - 금속절연체박막폴리실리콘반도체트랜지스터구조 - Google Patents

금속절연체박막폴리실리콘반도체트랜지스터구조 Download PDF

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Publication number
KR100305665B1
KR100305665B1 KR1019940000140A KR19940000140A KR100305665B1 KR 100305665 B1 KR100305665 B1 KR 100305665B1 KR 1019940000140 A KR1019940000140 A KR 1019940000140A KR 19940000140 A KR19940000140 A KR 19940000140A KR 100305665 B1 KR100305665 B1 KR 100305665B1
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South Korea
Prior art keywords
region
gate electrode
drain
thin film
source
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Expired - Lifetime
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KR1019940000140A
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English (en)
Korean (ko)
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KR940020576A (ko
Inventor
나디아리프쉬쯔
서지루리
Original Assignee
죤 제이.키세인
에이 티 앤드 티 코포레이션
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Publication of KR940020576A publication Critical patent/KR940020576A/ko
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Publication of KR100305665B1 publication Critical patent/KR100305665B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019940000140A 1993-02-16 1994-01-06 금속절연체박막폴리실리콘반도체트랜지스터구조 Expired - Lifetime KR100305665B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1848493A 1993-02-16 1993-02-16
US018,484 1993-02-16

Publications (2)

Publication Number Publication Date
KR940020576A KR940020576A (ko) 1994-09-16
KR100305665B1 true KR100305665B1 (ko) 2001-12-15

Family

ID=21788163

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940000140A Expired - Lifetime KR100305665B1 (ko) 1993-02-16 1994-01-06 금속절연체박막폴리실리콘반도체트랜지스터구조

Country Status (5)

Country Link
US (1) US5550397A (enExample)
EP (1) EP0612111A1 (enExample)
JP (1) JPH06252401A (enExample)
KR (1) KR100305665B1 (enExample)
TW (1) TW273039B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3078720B2 (ja) 1994-11-02 2000-08-21 三菱電機株式会社 半導体装置およびその製造方法
DE69531282T2 (de) * 1994-12-20 2004-05-27 STMicroelectronics, Inc., Carrollton Isolierung durch aktive Transistoren mit geerdeten Torelektroden
US6380598B1 (en) 1994-12-20 2002-04-30 Stmicroelectronics, Inc. Radiation hardened semiconductor memory
US6418318B1 (en) * 1995-12-12 2002-07-09 At&T Wireless Services, Inc. Method for selecting a preferable wireless communications service provider in a multi-service provider environment
US5801411A (en) * 1996-01-11 1998-09-01 Dallas Semiconductor Corp. Integrated capacitor with reduced voltage/temperature drift
JP3606991B2 (ja) * 1996-02-20 2005-01-05 株式会社半導体エネルギー研究所 被膜作製方法
JPH09293793A (ja) * 1996-04-26 1997-11-11 Mitsubishi Electric Corp 薄膜トランジスタを有する半導体装置およびその製造方法
US8603870B2 (en) 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW556263B (en) * 1996-07-11 2003-10-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US5953596A (en) * 1996-12-19 1999-09-14 Micron Technology, Inc. Methods of forming thin film transistors
US6060749A (en) * 1998-04-23 2000-05-09 Texas Instruments - Acer Incorporated Ultra-short channel elevated S/D MOSFETS formed on an ultra-thin SOI substrate
US6188897B1 (en) 1998-08-17 2001-02-13 At&T Wireless Svcs. Inc. Mobile station roaming in a multiple service provider area
US6204521B1 (en) * 1998-08-28 2001-03-20 Micron Technology, Inc. Thin film transistors
US6136656A (en) * 1998-10-22 2000-10-24 International Business Machines Corporation Method to create a depleted poly MOSFET
US6091630A (en) * 1999-09-10 2000-07-18 Stmicroelectronics, Inc. Radiation hardened semiconductor memory
KR100374551B1 (ko) * 2000-01-27 2003-03-04 주식회사 하이닉스반도체 반도체 소자 및 그 제조방법
US20040004251A1 (en) * 2002-07-08 2004-01-08 Madurawe Raminda U. Insulated-gate field-effect thin film transistors
CA2576960A1 (en) * 2004-07-08 2007-01-04 Semisouth Laboratories, Inc. Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
FR2894386B1 (fr) * 2005-12-06 2008-02-29 Commissariat Energie Atomique Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor
EP2309544B1 (en) * 2009-10-06 2019-06-12 IMEC vzw Tunnel field effect transistor with improved subthreshold swing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111347A1 (en) * 1982-10-06 1984-06-20 Koninklijke Philips Electronics N.V. MIS semiconductor device
JPH0268965A (ja) * 1988-09-02 1990-03-08 Fuji Xerox Co Ltd ポリシリコン薄膜トランジスタ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145438B1 (enExample) * 1971-06-25 1976-12-03
US4862237A (en) * 1983-01-10 1989-08-29 Seiko Epson Corporation Solid state image sensor
JPS6038878A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd Ｍｉｓ型半導体装置
JPS6148979A (ja) * 1984-08-17 1986-03-10 Seiko Epson Corp 多結晶シリコン薄膜トランジスタの製造方法
JPS63283068A (ja) * 1987-05-14 1988-11-18 Sharp Corp 薄膜トランジスタの製造方法
JPH0227772A (ja) * 1988-07-15 1990-01-30 Sony Corp 電界効果型薄膜トランジスタ
EP0487022B1 (en) * 1990-11-23 1997-04-23 Texas Instruments Incorporated A method of simultaneously fabricating an insulated gate-field-effect transistor and a bipolar transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111347A1 (en) * 1982-10-06 1984-06-20 Koninklijke Philips Electronics N.V. MIS semiconductor device
JPH0268965A (ja) * 1988-09-02 1990-03-08 Fuji Xerox Co Ltd ポリシリコン薄膜トランジスタ

Also Published As

Publication number Publication date
KR940020576A (ko) 1994-09-16
TW273039B (enExample) 1996-03-21
JPH06252401A (ja) 1994-09-09
US5550397A (en) 1996-08-27
EP0612111A1 (en) 1994-08-24

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