KR100302174B1 - 완전폐쇄자속동작의비휘발성자기저항메모리 - Google Patents

완전폐쇄자속동작의비휘발성자기저항메모리 Download PDF

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Publication number
KR100302174B1
KR100302174B1 KR1019970705516A KR19970705516A KR100302174B1 KR 100302174 B1 KR100302174 B1 KR 100302174B1 KR 1019970705516 A KR1019970705516 A KR 1019970705516A KR 19970705516 A KR19970705516 A KR 19970705516A KR 100302174 B1 KR100302174 B1 KR 100302174B1
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South Korea
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layers
memory
layer
gmr
memory cell
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Expired - Fee Related
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KR1019970705516A
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Korean (ko)
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KR19980702121A (ko
Inventor
제임스 토로크
리차드 스프티저
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스핏져 리챠드
인티그레이티드 메그니토일렉트로닉스
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Publication of KR19980702121A publication Critical patent/KR19980702121A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1019970705516A 1995-02-13 1996-02-08 완전폐쇄자속동작의비휘발성자기저항메모리 Expired - Fee Related KR100302174B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/388,035 US5587943A (en) 1995-02-13 1995-02-13 Nonvolatile magnetoresistive memory with fully closed flux operation
US8/388,035 1995-02-13
US08/388,035 1995-02-13
PCT/US1996/001653 WO1996025740A1 (en) 1995-02-13 1996-02-08 Nonvolatile magnetoresistive memory with fully closed-flux operation

Publications (2)

Publication Number Publication Date
KR19980702121A KR19980702121A (ko) 1998-07-15
KR100302174B1 true KR100302174B1 (ko) 2001-09-22

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KR1019970705516A Expired - Fee Related KR100302174B1 (ko) 1995-02-13 1996-02-08 완전폐쇄자속동작의비휘발성자기저항메모리

Country Status (8)

Country Link
US (1) US5587943A (https=)
EP (1) EP0809846B1 (https=)
JP (1) JP4171067B2 (https=)
KR (1) KR100302174B1 (https=)
CA (1) CA2211699C (https=)
DE (1) DE69609165T2 (https=)
TW (1) TW287272B (https=)
WO (1) WO1996025740A1 (https=)

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Publication number Publication date
EP0809846A4 (en) 1998-08-26
JP4171067B2 (ja) 2008-10-22
DE69609165D1 (de) 2000-08-10
DE69609165T2 (de) 2001-03-22
KR19980702121A (ko) 1998-07-15
CA2211699A1 (en) 1996-08-22
US5587943A (en) 1996-12-24
JPH11501438A (ja) 1999-02-02
WO1996025740A1 (en) 1996-08-22
EP0809846A1 (en) 1997-12-03
CA2211699C (en) 2001-07-24
EP0809846B1 (en) 2000-07-05
TW287272B (https=) 1996-10-01

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