KR100300097B1 - 플라즈마처리장치 - Google Patents

플라즈마처리장치 Download PDF

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Publication number
KR100300097B1
KR100300097B1 KR1019950009915A KR19950009915A KR100300097B1 KR 100300097 B1 KR100300097 B1 KR 100300097B1 KR 1019950009915 A KR1019950009915 A KR 1019950009915A KR 19950009915 A KR19950009915 A KR 19950009915A KR 100300097 B1 KR100300097 B1 KR 100300097B1
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KR
South Korea
Prior art keywords
gas
processing
plasma
gas supply
gas ejection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019950009915A
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English (en)
Korean (ko)
Other versions
KR950034531A (ko
Inventor
스즈키아키라
가와무라고헤이
이시즈카슈이치
하타지로
Original Assignee
히가시 데쓰로
동경 엘렉트론 주식회사
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Filing date
Publication date
Priority claimed from JP16745194A external-priority patent/JP3243125B2/ja
Application filed by 히가시 데쓰로, 동경 엘렉트론 주식회사 filed Critical 히가시 데쓰로
Publication of KR950034531A publication Critical patent/KR950034531A/ko
Application granted granted Critical
Publication of KR100300097B1 publication Critical patent/KR100300097B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1019950009915A 1994-04-26 1995-04-26 플라즈마처리장치 Expired - Lifetime KR100300097B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11030194 1994-04-26
JP94-110301 1994-04-26
JP16745194A JP3243125B2 (ja) 1994-06-27 1994-06-27 処理装置
JP94-167451 1994-06-27

Publications (2)

Publication Number Publication Date
KR950034531A KR950034531A (ko) 1995-12-28
KR100300097B1 true KR100300097B1 (ko) 2001-11-30

Family

ID=26449954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950009915A Expired - Lifetime KR100300097B1 (ko) 1994-04-26 1995-04-26 플라즈마처리장치

Country Status (3)

Country Link
US (1) US5522934A (enExample)
KR (1) KR100300097B1 (enExample)
TW (1) TW311326B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180008907A (ko) * 2015-06-12 2018-01-24 어플라이드 머티어리얼스, 인코포레이티드 반도체 에피택시 성장을 위한 주입기
US12424415B2 (en) 2020-09-18 2025-09-23 Kokusai Electric Corporation Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
KR102893167B1 (ko) 2016-02-12 2025-11-28 램 리써치 코포레이션 막을 선택적으로 에칭하기 위한 시스템들 및 방법들

Families Citing this family (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
WO1996031997A1 (en) * 1995-04-07 1996-10-10 Seiko Epson Corporation Surface treatment apparatus
US5683517A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US5968379A (en) * 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US5716451A (en) * 1995-08-17 1998-02-10 Tokyo Electron Limited Plasma processing apparatus
US6089182A (en) * 1995-08-17 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
US5772771A (en) 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
KR970072061A (ko) * 1996-04-16 1997-11-07 김광호 반도체 제조 공정에 사용되는 확산로
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
KR100493684B1 (ko) * 1996-06-28 2005-09-12 램 리서치 코포레이션 고밀도플라즈마화학기상증착장치및그방법
WO1998000576A1 (en) * 1996-06-28 1998-01-08 Lam Research Corporation Apparatus and method for high density plasma chemical vapor deposition
US6626185B2 (en) * 1996-06-28 2003-09-30 Lam Research Corporation Method of depositing a silicon containing layer on a semiconductor substrate
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5885358A (en) * 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US6534922B2 (en) 1996-09-27 2003-03-18 Surface Technology Systems, Plc Plasma processing apparatus
DE69736081T2 (de) * 1996-09-27 2007-01-11 Surface Technoloy Systems Plc Plasmabearbeitungsvorrichtung
US6308654B1 (en) * 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6189482B1 (en) 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6035868A (en) * 1997-03-31 2000-03-14 Lam Research Corporation Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
US6158384A (en) * 1997-06-05 2000-12-12 Applied Materials, Inc. Plasma reactor with multiple small internal inductive antennas
US6071372A (en) 1997-06-05 2000-06-06 Applied Materials, Inc. RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
KR100466867B1 (ko) * 1997-07-03 2005-04-19 삼성전자주식회사 증착속도가일정한플라즈마인헨스드화학기상증착장치
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US20020011215A1 (en) 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
US6482747B1 (en) * 1997-12-26 2002-11-19 Hitachi, Ltd. Plasma treatment method and plasma treatment apparatus
US6132552A (en) * 1998-02-19 2000-10-17 Micron Technology, Inc. Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
EP1063690A4 (en) * 1998-03-05 2003-03-26 Tokyo Electron Ltd PLASMA TREATMENT APPARATUS AND METHOD
US6155199A (en) * 1998-03-31 2000-12-05 Lam Research Corporation Parallel-antenna transformer-coupled plasma generation system
US6185839B1 (en) 1998-05-28 2001-02-13 Applied Materials, Inc. Semiconductor process chamber having improved gas distributor
US6164241A (en) 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
US6440220B1 (en) * 1998-10-23 2002-08-27 Goodrich Corporation Method and apparatus for inhibiting infiltration of a reactive gas into porous refractory insulation
US6143078A (en) * 1998-11-13 2000-11-07 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6849154B2 (en) * 1998-11-27 2005-02-01 Tokyo Electron Limited Plasma etching apparatus
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6263829B1 (en) 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
KR100319494B1 (ko) * 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
US6383954B1 (en) * 1999-07-27 2002-05-07 Applied Materials, Inc. Process gas distribution for forming stable fluorine-doped silicate glass and other films
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US20030155079A1 (en) * 1999-11-15 2003-08-21 Andrew D. Bailey Plasma processing system with dynamic gas distribution control
EP1230664B1 (en) * 1999-11-15 2008-05-07 Lam Research Corporation Processing systems
JP4222707B2 (ja) * 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
US6632322B1 (en) * 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
KR100444149B1 (ko) * 2000-07-22 2004-08-09 주식회사 아이피에스 Ald 박막증착설비용 클리닝방법
US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
KR100688479B1 (ko) * 2000-08-21 2007-03-08 삼성전자주식회사 균일한 클리닝 가스 공급을 위한 플라즈마 화학 기상 증착챔버
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
KR100436941B1 (ko) * 2000-11-07 2004-06-23 주성엔지니어링(주) 박막 증착 장치 및 그 방법
US6706142B2 (en) * 2000-11-30 2004-03-16 Mattson Technology, Inc. Systems and methods for enhancing plasma processing of a semiconductor substrate
CA2432068C (en) * 2000-12-27 2008-10-07 Japan Science And Technology Corporation Plasma generator
US6660662B2 (en) * 2001-01-26 2003-12-09 Applied Materials, Inc. Method of reducing plasma charge damage for plasma processes
US20020129768A1 (en) * 2001-03-15 2002-09-19 Carpenter Craig M. Chemical vapor deposition apparatuses and deposition methods
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
KR20040019293A (ko) * 2001-05-24 2004-03-05 셀레리티 그룹 아이엔씨 소정 비율의 프로세스 유체를 제공하는 방법 및 장치
US6652711B2 (en) 2001-06-06 2003-11-25 Tokyo Electron Limited Inductively-coupled plasma processing system
US6676760B2 (en) 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US6677250B2 (en) * 2001-08-17 2004-01-13 Micron Technology, Inc. CVD apparatuses and methods of forming a layer over a semiconductor substrate
US20030047282A1 (en) * 2001-09-10 2003-03-13 Yasumi Sago Surface processing apparatus
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
KR20030041217A (ko) * 2001-11-19 2003-05-27 주성엔지니어링(주) Ｉｃｐ 발생 장치의 안테나 전극
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
KR100447248B1 (ko) * 2002-01-22 2004-09-07 주성엔지니어링(주) Ｉｃｐ 에쳐용 가스 확산판
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
DE60329292D1 (de) * 2002-03-08 2009-10-29 Canon Anelva Corp Verfahren und Vorrichtung zum Herstellen von Metall-Schichten
AU2003233655A1 (en) 2002-05-23 2003-12-12 Lam Research Corporation Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US20040231798A1 (en) * 2002-09-13 2004-11-25 Applied Materials, Inc. Gas delivery system for semiconductor processing
US20040112540A1 (en) 2002-12-13 2004-06-17 Lam Research Corporation Uniform etch system
US7534363B2 (en) * 2002-12-13 2009-05-19 Lam Research Corporation Method for providing uniform removal of organic material
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US20040129210A1 (en) * 2003-01-03 2004-07-08 Applied Materials, Inc. Gas nozzle for substrate processing chamber
EP1589793B1 (en) * 2003-01-16 2014-06-04 Japan Science and Technology Agency Plasma generation device
JP2006524914A (ja) * 2003-03-31 2006-11-02 東京エレクトロン株式会社 プラズマ処理システム及び方法
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
JP4372443B2 (ja) * 2003-04-01 2009-11-25 東京エレクトロン株式会社 処理装置および処理方法
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US6829056B1 (en) 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
KR101001743B1 (ko) * 2003-11-17 2010-12-15 삼성전자주식회사 헬리컬 자기-공진 코일을 이용한 이온화 물리적 기상 증착장치
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20050211544A1 (en) * 2004-03-29 2005-09-29 Seagate Technology Llc Electrical biasing of gas introduction means of plasma apparatus
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8361013B2 (en) * 2004-04-19 2013-01-29 The Invention Science Fund I, Llc Telescoping perfusion management system
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
JP4642379B2 (ja) * 2004-05-12 2011-03-02 東京エレクトロン株式会社 排気捕集装置
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7651587B2 (en) * 2005-08-11 2010-01-26 Applied Materials, Inc. Two-piece dome with separate RF coils for inductively coupled plasma reactors
EP1949406B1 (en) * 2005-10-05 2010-12-08 PVA TePla AG Plasma etching method and etching chamber
TWI409873B (zh) * 2005-11-02 2013-09-21 松下電器產業股份有限公司 電漿處理裝置
US20070235320A1 (en) * 2006-04-06 2007-10-11 Applied Materials, Inc. Reactive sputtering chamber with gas distribution tubes
JP5222281B2 (ja) * 2006-04-06 2013-06-26 アプライド マテリアルズ インコーポレイテッド ラージエリア基板への酸化亜鉛透明導電性酸化物の反応性スパッタリング
KR20090007721A (ko) * 2006-05-08 2009-01-20 파나소닉 주식회사 대기압 플라스마 발생장치 및 발생방법
TWI435663B (zh) * 2006-05-22 2014-04-21 Gen Co Ltd 電漿反應器
WO2007142850A2 (en) * 2006-06-02 2007-12-13 Applied Materials Gas flow control by differential pressure measurements
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
US8012366B2 (en) 2006-10-30 2011-09-06 Applied Materials, Inc. Process for etching a transparent workpiece including backside endpoint detection steps
US8002946B2 (en) 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US7967930B2 (en) 2006-10-30 2011-06-28 Applied Materials, Inc. Plasma reactor for processing a workpiece and having a tunable cathode
US9218944B2 (en) 2006-10-30 2015-12-22 Applied Materials, Inc. Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
US8017029B2 (en) 2006-10-30 2011-09-13 Applied Materials, Inc. Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
US7976671B2 (en) * 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
US20080113107A1 (en) * 2006-11-09 2008-05-15 Stowell Michael W System and method for containment shielding during pecvd deposition processes
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US20080236491A1 (en) * 2007-03-30 2008-10-02 Tokyo Electron Limited Multiflow integrated icp source
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
US9105449B2 (en) * 2007-06-29 2015-08-11 Lam Research Corporation Distributed power arrangements for localizing power delivery
US8528498B2 (en) * 2007-06-29 2013-09-10 Lam Research Corporation Integrated steerability array arrangement for minimizing non-uniformity
TWI434420B (zh) 2007-08-02 2014-04-11 Applied Materials Inc 使用薄膜半導體材料的薄膜式電晶體
CZ17940U1 (cs) * 2007-09-13 2007-10-15 Špatenka@Petr Aplikátor mikrovlnného generátoru plazmatu, a mikrovlnný generátor plazmatu zahrnující tento aplikátor
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
JP2009239082A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US8035370B2 (en) * 2009-03-10 2011-10-11 The Boeing Company Systems and methods to stir an electromagnetic (EM) field
JP5141607B2 (ja) * 2009-03-13 2013-02-13 東京エレクトロン株式会社 成膜装置
WO2011037829A2 (en) * 2009-09-24 2011-03-31 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5740203B2 (ja) 2010-05-26 2015-06-24 東京エレクトロン株式会社 プラズマ処理装置及びその処理ガス供給構造
JP5718011B2 (ja) * 2010-10-13 2015-05-13 東京エレクトロン株式会社 プラズマ処理装置及びその処理ガス供給構造
JP5745812B2 (ja) * 2010-10-27 2015-07-08 東京エレクトロン株式会社 プラズマ処理装置
US9398680B2 (en) * 2010-12-03 2016-07-19 Lam Research Corporation Immersible plasma coil assembly and method for operating the same
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
US9941100B2 (en) 2011-12-16 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle
JP5803714B2 (ja) * 2012-02-09 2015-11-04 東京エレクトロン株式会社 成膜装置
WO2014119177A1 (ja) * 2013-01-30 2014-08-07 京セラ株式会社 ガスノズルおよびこれを用いたプラズマ装置
CN106304597B (zh) 2013-03-12 2019-05-10 应用材料公司 具有方位角与径向分布控制的多区域气体注入组件
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
JP6297509B2 (ja) * 2015-01-26 2018-03-20 東京エレクトロン株式会社 基板処理装置
JP6472356B2 (ja) * 2015-09-11 2019-02-20 東京エレクトロン株式会社 熱処理装置
WO2017095561A1 (en) * 2015-12-04 2017-06-08 Applied Materials, Inc. Advanced coating method and materials to prevent hdp-cvd chamber arcing
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10896806B2 (en) * 2016-11-03 2021-01-19 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
US20180308661A1 (en) 2017-04-24 2018-10-25 Applied Materials, Inc. Plasma reactor with electrode filaments
US10510515B2 (en) 2017-06-22 2019-12-17 Applied Materials, Inc. Processing tool with electrically switched electrode assembly
US11355321B2 (en) 2017-06-22 2022-06-07 Applied Materials, Inc. Plasma reactor with electrode assembly for moving substrate
US11114284B2 (en) * 2017-06-22 2021-09-07 Applied Materials, Inc. Plasma reactor with electrode array in ceiling
US20190157048A1 (en) * 2017-11-17 2019-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma processing apparatus and method for forming semiconductor device structure
US20200258718A1 (en) * 2019-02-07 2020-08-13 Mattson Technology, Inc. Gas Supply With Angled Injectors In Plasma Processing Apparatus
KR20210123128A (ko) * 2020-04-02 2021-10-13 삼성전자주식회사 반도체 장치의 제조에 사용되는 장치
IL281747B2 (en) * 2021-03-22 2024-04-01 N T Tao Ltd High efficiency plasma creation system and method
US20230083497A1 (en) * 2021-09-15 2023-03-16 Applied Materials, Inc. Uniform plasma linear ion source
JP7549567B2 (ja) * 2021-09-27 2024-09-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
KR20230122477A (ko) * 2022-02-14 2023-08-22 주성엔지니어링(주) 기판 처리 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US301933A (en) * 1884-07-15 Sash-li ft
US4383177A (en) * 1980-12-24 1983-05-10 International Business Machines Corporation Multipole implantation-isotope separation ion beam source
US4384938A (en) * 1982-05-03 1983-05-24 International Business Machines Corporation Reactive ion etching chamber
US4992301A (en) * 1987-09-22 1991-02-12 Nec Corporation Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
EP0379828B1 (en) * 1989-01-25 1995-09-27 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
JPH0358171A (ja) * 1989-07-26 1991-03-13 Mitsubishi Electric Corp 画像検索装置
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
FR2653633B1 (fr) * 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
US5269847A (en) * 1990-08-23 1993-12-14 Applied Materials, Inc. Variable rate distribution gas flow reaction chamber
US5217559A (en) * 1990-12-10 1993-06-08 Texas Instruments Incorporated Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing
JPH04362091A (ja) * 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd プラズマ化学気相成長装置
JP2931820B2 (ja) * 1991-11-05 1999-08-09 東京エレクトロン株式会社 板状体の処理装置及び搬送装置
JPH05243155A (ja) * 1992-02-27 1993-09-21 Mitsubishi Electric Corp スパッタ装置
JPH05317375A (ja) * 1992-05-25 1993-12-03 Matsushita Electric Works Ltd 振動式マッサージ機のヘッド部
JPH0669160A (ja) * 1992-08-21 1994-03-11 Mitsubishi Heavy Ind Ltd プラズマ化学エッチング装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180008907A (ko) * 2015-06-12 2018-01-24 어플라이드 머티어리얼스, 인코포레이티드 반도체 에피택시 성장을 위한 주입기
KR102696320B1 (ko) * 2015-06-12 2024-08-20 어플라이드 머티어리얼스, 인코포레이티드 반도체 에피택시 성장을 위한 주입기
US12571101B2 (en) 2015-06-12 2026-03-10 Applied Materials, Inc. Multi-level injector with angled gas outlet for semiconductor epitaxy growth
KR102893167B1 (ko) 2016-02-12 2025-11-28 램 리써치 코포레이션 막을 선택적으로 에칭하기 위한 시스템들 및 방법들
US12424415B2 (en) 2020-09-18 2025-09-23 Kokusai Electric Corporation Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
KR102922766B1 (ko) * 2020-09-18 2026-02-03 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 처리 방법, 반도체 장치의 제조 방법 및 프로그램

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