KR100278257B1 - 양각 작용성 고해상 건조 필름 포토레지스트 - Google Patents

양각 작용성 고해상 건조 필름 포토레지스트 Download PDF

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Publication number
KR100278257B1
KR100278257B1 KR1019970066939A KR19970066939A KR100278257B1 KR 100278257 B1 KR100278257 B1 KR 100278257B1 KR 1019970066939 A KR1019970066939 A KR 1019970066939A KR 19970066939 A KR19970066939 A KR 19970066939A KR 100278257 B1 KR100278257 B1 KR 100278257B1
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KR
South Korea
Prior art keywords
coor
hydrogen atom
alkyl
acid generator
resin
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Expired - Fee Related
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KR1019970066939A
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English (en)
Korean (ko)
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KR19980063926A (ko
Inventor
비. 벨트라모 그리그
에이. 코스 토마스
Original Assignee
화이트 제랄드 케이.
모르톤 인터내쇼날 인코포레이티드
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Priority claimed from US08/910,188 external-priority patent/US5981135A/en
Application filed by 화이트 제랄드 케이., 모르톤 인터내쇼날 인코포레이티드 filed Critical 화이트 제랄드 케이.
Publication of KR19980063926A publication Critical patent/KR19980063926A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
  • Chemically Coating (AREA)
KR1019970066939A 1996-12-10 1997-12-09 양각 작용성 고해상 건조 필름 포토레지스트 Expired - Fee Related KR100278257B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US76303196A 1996-12-10 1996-12-10
US8/763,031 1996-12-10
US08/763,031 1996-12-10
US8/910,179 1997-08-13
US08/910,188 US5981135A (en) 1997-08-13 1997-08-13 High resolution positive acting dry film photoresist
US08/910,188 1997-08-13

Publications (2)

Publication Number Publication Date
KR19980063926A KR19980063926A (ko) 1998-10-07
KR100278257B1 true KR100278257B1 (ko) 2001-07-12

Family

ID=27117220

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970066939A Expired - Fee Related KR100278257B1 (ko) 1996-12-10 1997-12-09 양각 작용성 고해상 건조 필름 포토레지스트

Country Status (8)

Country Link
EP (1) EP0848290B1 (enExample)
JP (1) JPH10213903A (enExample)
KR (1) KR100278257B1 (enExample)
CN (1) CN1118002C (enExample)
CA (1) CA2224312C (enExample)
DE (1) DE69702828T2 (enExample)
ES (1) ES2152067T3 (enExample)
TW (1) TW574628B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101142631B1 (ko) 2007-12-14 2012-05-10 코오롱인더스트리 주식회사 샌드블라스트 레지스트용 감광성 수지 조성물 및 드라이필름 포토레지스트

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502133B (en) 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
US6255033B1 (en) 1999-07-30 2001-07-03 Creo, Ltd. Positive acting photoresist compositions and imageable element
JP2002169291A (ja) 2000-12-04 2002-06-14 Canon Inc 感光性樹脂組成物、レジスト組成物、パターン形成方法およびデバイス
TW200401164A (en) 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
KR20040035345A (ko) * 2002-10-22 2004-04-29 주식회사 코오롱 샌드블라스트레지스트용 감광성수지조성물 및 이를포함하는 감광성 필름
CN1527136B (zh) * 2003-03-05 2014-02-26 希普利公司 光致抗蚀剂组合物
JP5390964B2 (ja) * 2009-07-01 2014-01-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びそれを用いた感光性フィルム
JP6191169B2 (ja) * 2013-03-06 2017-09-06 ナガセケムテックス株式会社 電子部品保護膜形成用組成物
SI2784586T1 (sl) * 2013-03-27 2015-11-30 UNIVERZA V MARIBORU Fakulteta za Strojništvo Večdimenzionalni foto tiskani substrati na osnovi monosaharid derivatov, njihovih oligomerov in njih polimerov ter postopek njih proizvodnje
KR101636865B1 (ko) * 2013-09-10 2016-07-06 제일모직 주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
FR3034881B1 (fr) * 2015-04-09 2017-05-05 Univ Claude Bernard Lyon Mise en œuvre de chitosane ou d'alginate en tant que masque de transfert dans des procedes de lithographie et de transfert
JP6809873B2 (ja) * 2015-12-28 2021-01-06 旭化成株式会社 積層体
KR102690556B1 (ko) * 2020-11-05 2024-07-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
DE102021000478A1 (de) 2021-02-01 2022-08-04 Giesecke+Devrient Currency Technology Gmbh Maskenbelichtungsverfahren, transparente, leitfähige Metallisierung und Pigment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2627571B2 (ja) * 1990-05-31 1997-07-09 富士写真フイルム株式会社 感光性組成物
JPH06342212A (ja) * 1993-04-07 1994-12-13 Matsushita Electric Ind Co Ltd 微細パターン形成用レジストおよび微細パターン形成方法
JP3078153B2 (ja) * 1993-07-08 2000-08-21 富士写真フイルム株式会社 感光性組成物
JPH086252A (ja) * 1994-06-24 1996-01-12 Sony Corp 感光性樹脂組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101142631B1 (ko) 2007-12-14 2012-05-10 코오롱인더스트리 주식회사 샌드블라스트 레지스트용 감광성 수지 조성물 및 드라이필름 포토레지스트

Also Published As

Publication number Publication date
JPH10213903A (ja) 1998-08-11
KR19980063926A (ko) 1998-10-07
CN1118002C (zh) 2003-08-13
CN1185593A (zh) 1998-06-24
DE69702828T2 (de) 2000-12-07
EP0848290A1 (en) 1998-06-17
CA2224312C (en) 2001-02-20
TW574628B (en) 2004-02-01
ES2152067T3 (es) 2001-01-16
DE69702828D1 (de) 2000-09-21
CA2224312A1 (en) 1998-06-10
EP0848290B1 (en) 2000-08-16

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