CN1118002C - 高分辨率的正作用干膜光致抗蚀剂 - Google Patents

高分辨率的正作用干膜光致抗蚀剂 Download PDF

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Publication number
CN1118002C
CN1118002C CN97114183A CN97114183A CN1118002C CN 1118002 C CN1118002 C CN 1118002C CN 97114183 A CN97114183 A CN 97114183A CN 97114183 A CN97114183 A CN 97114183A CN 1118002 C CN1118002 C CN 1118002C
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CN
China
Prior art keywords
resin
alkyl
coor
hydroxyalkyl
adhesive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN97114183A
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English (en)
Chinese (zh)
Other versions
CN1185593A (zh
Inventor
托马斯·A·考斯
格里格·B·贝尔特拉莫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Roman Haas chemical Limited Liability Company
Original Assignee
Morton International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/910,188 external-priority patent/US5981135A/en
Application filed by Morton International LLC filed Critical Morton International LLC
Publication of CN1185593A publication Critical patent/CN1185593A/zh
Application granted granted Critical
Publication of CN1118002C publication Critical patent/CN1118002C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
  • Chemically Coating (AREA)
CN97114183A 1996-12-10 1997-12-10 高分辨率的正作用干膜光致抗蚀剂 Expired - Fee Related CN1118002C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US76303196A 1996-12-10 1996-12-10
US08/763031 1996-12-10
US08/910,188 1997-08-13
US08/910,188 US5981135A (en) 1997-08-13 1997-08-13 High resolution positive acting dry film photoresist

Publications (2)

Publication Number Publication Date
CN1185593A CN1185593A (zh) 1998-06-24
CN1118002C true CN1118002C (zh) 2003-08-13

Family

ID=27117220

Family Applications (1)

Application Number Title Priority Date Filing Date
CN97114183A Expired - Fee Related CN1118002C (zh) 1996-12-10 1997-12-10 高分辨率的正作用干膜光致抗蚀剂

Country Status (8)

Country Link
EP (1) EP0848290B1 (enExample)
JP (1) JPH10213903A (enExample)
KR (1) KR100278257B1 (enExample)
CN (1) CN1118002C (enExample)
CA (1) CA2224312C (enExample)
DE (1) DE69702828T2 (enExample)
ES (1) ES2152067T3 (enExample)
TW (1) TW574628B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
US6255033B1 (en) 1999-07-30 2001-07-03 Creo, Ltd. Positive acting photoresist compositions and imageable element
JP2002169291A (ja) 2000-12-04 2002-06-14 Canon Inc 感光性樹脂組成物、レジスト組成物、パターン形成方法およびデバイス
TW200401164A (en) 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
KR20040035345A (ko) * 2002-10-22 2004-04-29 주식회사 코오롱 샌드블라스트레지스트용 감광성수지조성물 및 이를포함하는 감광성 필름
CN1527136B (zh) * 2003-03-05 2014-02-26 希普利公司 光致抗蚀剂组合物
KR101142631B1 (ko) 2007-12-14 2012-05-10 코오롱인더스트리 주식회사 샌드블라스트 레지스트용 감광성 수지 조성물 및 드라이필름 포토레지스트
JP5390964B2 (ja) * 2009-07-01 2014-01-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びそれを用いた感光性フィルム
JP6191169B2 (ja) * 2013-03-06 2017-09-06 ナガセケムテックス株式会社 電子部品保護膜形成用組成物
SI2784586T1 (sl) * 2013-03-27 2015-11-30 UNIVERZA V MARIBORU Fakulteta za Strojništvo Večdimenzionalni foto tiskani substrati na osnovi monosaharid derivatov, njihovih oligomerov in njih polimerov ter postopek njih proizvodnje
KR101636865B1 (ko) * 2013-09-10 2016-07-06 제일모직 주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
FR3034881B1 (fr) * 2015-04-09 2017-05-05 Univ Claude Bernard Lyon Mise en œuvre de chitosane ou d'alginate en tant que masque de transfert dans des procedes de lithographie et de transfert
JP6809873B2 (ja) * 2015-12-28 2021-01-06 旭化成株式会社 積層体
KR102690556B1 (ko) * 2020-11-05 2024-07-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
DE102021000478A1 (de) 2021-02-01 2022-08-04 Giesecke+Devrient Currency Technology Gmbh Maskenbelichtungsverfahren, transparente, leitfähige Metallisierung und Pigment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2627571B2 (ja) * 1990-05-31 1997-07-09 富士写真フイルム株式会社 感光性組成物
JPH06342212A (ja) * 1993-04-07 1994-12-13 Matsushita Electric Ind Co Ltd 微細パターン形成用レジストおよび微細パターン形成方法
JP3078153B2 (ja) * 1993-07-08 2000-08-21 富士写真フイルム株式会社 感光性組成物
JPH086252A (ja) * 1994-06-24 1996-01-12 Sony Corp 感光性樹脂組成物

Also Published As

Publication number Publication date
TW574628B (en) 2004-02-01
CA2224312C (en) 2001-02-20
KR100278257B1 (ko) 2001-07-12
EP0848290A1 (en) 1998-06-17
DE69702828T2 (de) 2000-12-07
EP0848290B1 (en) 2000-08-16
KR19980063926A (ko) 1998-10-07
JPH10213903A (ja) 1998-08-11
CN1185593A (zh) 1998-06-24
DE69702828D1 (de) 2000-09-21
CA2224312A1 (en) 1998-06-10
ES2152067T3 (es) 2001-01-16

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C14 Grant of patent or utility model
GR01 Patent grant
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Owner name: ROHM AND HAAS CHEMICALS CO., LTD.

Free format text: FORMER OWNER: MERTON INTERNATIONAL CO., LTD.

Effective date: 20070119

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20070119

Address after: American Pennsylvania

Patentee after: Roman Haas chemical Limited Liability Company

Address before: Illinois

Patentee before: Morton International, Inc.

C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee