CA2224312C - High resolution positive acting dry film photoresist - Google Patents

High resolution positive acting dry film photoresist Download PDF

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Publication number
CA2224312C
CA2224312C CA002224312A CA2224312A CA2224312C CA 2224312 C CA2224312 C CA 2224312C CA 002224312 A CA002224312 A CA 002224312A CA 2224312 A CA2224312 A CA 2224312A CA 2224312 C CA2224312 C CA 2224312C
Authority
CA
Canada
Prior art keywords
coor
alkyl
photoacid generator
hydrogen
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002224312A
Other languages
English (en)
French (fr)
Other versions
CA2224312A1 (en
Inventor
Grieg B. Beltramo
Thomas A. Koes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Morton International LLC
Original Assignee
Morton International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/910,188 external-priority patent/US5981135A/en
Application filed by Morton International LLC filed Critical Morton International LLC
Publication of CA2224312A1 publication Critical patent/CA2224312A1/en
Application granted granted Critical
Publication of CA2224312C publication Critical patent/CA2224312C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
  • Chemically Coating (AREA)
CA002224312A 1996-12-10 1997-12-10 High resolution positive acting dry film photoresist Expired - Fee Related CA2224312C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US76303196A 1996-12-10 1996-12-10
US08/763,031 1996-12-10
US08/910,188 1997-08-13
US08/910,188 US5981135A (en) 1997-08-13 1997-08-13 High resolution positive acting dry film photoresist

Publications (2)

Publication Number Publication Date
CA2224312A1 CA2224312A1 (en) 1998-06-10
CA2224312C true CA2224312C (en) 2001-02-20

Family

ID=27117220

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002224312A Expired - Fee Related CA2224312C (en) 1996-12-10 1997-12-10 High resolution positive acting dry film photoresist

Country Status (8)

Country Link
EP (1) EP0848290B1 (enExample)
JP (1) JPH10213903A (enExample)
KR (1) KR100278257B1 (enExample)
CN (1) CN1118002C (enExample)
CA (1) CA2224312C (enExample)
DE (1) DE69702828T2 (enExample)
ES (1) ES2152067T3 (enExample)
TW (1) TW574628B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
US6255033B1 (en) 1999-07-30 2001-07-03 Creo, Ltd. Positive acting photoresist compositions and imageable element
JP2002169291A (ja) 2000-12-04 2002-06-14 Canon Inc 感光性樹脂組成物、レジスト組成物、パターン形成方法およびデバイス
TW200401164A (en) 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
KR20040035345A (ko) * 2002-10-22 2004-04-29 주식회사 코오롱 샌드블라스트레지스트용 감광성수지조성물 및 이를포함하는 감광성 필름
CN1527136B (zh) * 2003-03-05 2014-02-26 希普利公司 光致抗蚀剂组合物
KR101142631B1 (ko) 2007-12-14 2012-05-10 코오롱인더스트리 주식회사 샌드블라스트 레지스트용 감광성 수지 조성물 및 드라이필름 포토레지스트
JP5390964B2 (ja) * 2009-07-01 2014-01-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びそれを用いた感光性フィルム
JP6191169B2 (ja) * 2013-03-06 2017-09-06 ナガセケムテックス株式会社 電子部品保護膜形成用組成物
SI2784586T1 (sl) * 2013-03-27 2015-11-30 UNIVERZA V MARIBORU Fakulteta za Strojništvo Večdimenzionalni foto tiskani substrati na osnovi monosaharid derivatov, njihovih oligomerov in njih polimerov ter postopek njih proizvodnje
KR101636865B1 (ko) * 2013-09-10 2016-07-06 제일모직 주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
FR3034881B1 (fr) * 2015-04-09 2017-05-05 Univ Claude Bernard Lyon Mise en œuvre de chitosane ou d'alginate en tant que masque de transfert dans des procedes de lithographie et de transfert
JP6809873B2 (ja) * 2015-12-28 2021-01-06 旭化成株式会社 積層体
KR102690556B1 (ko) * 2020-11-05 2024-07-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
DE102021000478A1 (de) 2021-02-01 2022-08-04 Giesecke+Devrient Currency Technology Gmbh Maskenbelichtungsverfahren, transparente, leitfähige Metallisierung und Pigment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2627571B2 (ja) * 1990-05-31 1997-07-09 富士写真フイルム株式会社 感光性組成物
JPH06342212A (ja) * 1993-04-07 1994-12-13 Matsushita Electric Ind Co Ltd 微細パターン形成用レジストおよび微細パターン形成方法
JP3078153B2 (ja) * 1993-07-08 2000-08-21 富士写真フイルム株式会社 感光性組成物
JPH086252A (ja) * 1994-06-24 1996-01-12 Sony Corp 感光性樹脂組成物

Also Published As

Publication number Publication date
TW574628B (en) 2004-02-01
KR100278257B1 (ko) 2001-07-12
EP0848290A1 (en) 1998-06-17
DE69702828T2 (de) 2000-12-07
EP0848290B1 (en) 2000-08-16
KR19980063926A (ko) 1998-10-07
JPH10213903A (ja) 1998-08-11
CN1185593A (zh) 1998-06-24
CN1118002C (zh) 2003-08-13
DE69702828D1 (de) 2000-09-21
CA2224312A1 (en) 1998-06-10
ES2152067T3 (es) 2001-01-16

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