TW574628B - High resolution positive acting dry film photoresist - Google Patents

High resolution positive acting dry film photoresist Download PDF

Info

Publication number
TW574628B
TW574628B TW86117705A TW86117705A TW574628B TW 574628 B TW574628 B TW 574628B TW 86117705 A TW86117705 A TW 86117705A TW 86117705 A TW86117705 A TW 86117705A TW 574628 B TW574628 B TW 574628B
Authority
TW
Taiwan
Prior art keywords
scope
patent application
item
composition
quot
Prior art date
Application number
TW86117705A
Other languages
English (en)
Chinese (zh)
Inventor
Thomas A Koes
Grieg B Beltramo
Original Assignee
Morton Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/910,188 external-priority patent/US5981135A/en
Application filed by Morton Int Inc filed Critical Morton Int Inc
Application granted granted Critical
Publication of TW574628B publication Critical patent/TW574628B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
  • Chemically Coating (AREA)
TW86117705A 1996-12-10 1997-11-25 High resolution positive acting dry film photoresist TW574628B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US76303196A 1996-12-10 1996-12-10
US08/910,188 US5981135A (en) 1997-08-13 1997-08-13 High resolution positive acting dry film photoresist

Publications (1)

Publication Number Publication Date
TW574628B true TW574628B (en) 2004-02-01

Family

ID=27117220

Family Applications (1)

Application Number Title Priority Date Filing Date
TW86117705A TW574628B (en) 1996-12-10 1997-11-25 High resolution positive acting dry film photoresist

Country Status (8)

Country Link
EP (1) EP0848290B1 (enExample)
JP (1) JPH10213903A (enExample)
KR (1) KR100278257B1 (enExample)
CN (1) CN1118002C (enExample)
CA (1) CA2224312C (enExample)
DE (1) DE69702828T2 (enExample)
ES (1) ES2152067T3 (enExample)
TW (1) TW574628B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
US6255033B1 (en) 1999-07-30 2001-07-03 Creo, Ltd. Positive acting photoresist compositions and imageable element
JP2002169291A (ja) 2000-12-04 2002-06-14 Canon Inc 感光性樹脂組成物、レジスト組成物、パターン形成方法およびデバイス
TW200401164A (en) 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
KR20040035345A (ko) * 2002-10-22 2004-04-29 주식회사 코오롱 샌드블라스트레지스트용 감광성수지조성물 및 이를포함하는 감광성 필름
CN1527136B (zh) * 2003-03-05 2014-02-26 希普利公司 光致抗蚀剂组合物
KR101142631B1 (ko) 2007-12-14 2012-05-10 코오롱인더스트리 주식회사 샌드블라스트 레지스트용 감광성 수지 조성물 및 드라이필름 포토레지스트
JP5390964B2 (ja) * 2009-07-01 2014-01-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びそれを用いた感光性フィルム
JP6191169B2 (ja) * 2013-03-06 2017-09-06 ナガセケムテックス株式会社 電子部品保護膜形成用組成物
SI2784586T1 (sl) * 2013-03-27 2015-11-30 UNIVERZA V MARIBORU Fakulteta za Strojništvo Večdimenzionalni foto tiskani substrati na osnovi monosaharid derivatov, njihovih oligomerov in njih polimerov ter postopek njih proizvodnje
KR101636865B1 (ko) * 2013-09-10 2016-07-06 제일모직 주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
FR3034881B1 (fr) * 2015-04-09 2017-05-05 Univ Claude Bernard Lyon Mise en œuvre de chitosane ou d'alginate en tant que masque de transfert dans des procedes de lithographie et de transfert
JP6809873B2 (ja) * 2015-12-28 2021-01-06 旭化成株式会社 積層体
KR102690556B1 (ko) * 2020-11-05 2024-07-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
DE102021000478A1 (de) 2021-02-01 2022-08-04 Giesecke+Devrient Currency Technology Gmbh Maskenbelichtungsverfahren, transparente, leitfähige Metallisierung und Pigment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2627571B2 (ja) * 1990-05-31 1997-07-09 富士写真フイルム株式会社 感光性組成物
JPH06342212A (ja) * 1993-04-07 1994-12-13 Matsushita Electric Ind Co Ltd 微細パターン形成用レジストおよび微細パターン形成方法
JP3078153B2 (ja) * 1993-07-08 2000-08-21 富士写真フイルム株式会社 感光性組成物
JPH086252A (ja) * 1994-06-24 1996-01-12 Sony Corp 感光性樹脂組成物

Also Published As

Publication number Publication date
CA2224312C (en) 2001-02-20
KR100278257B1 (ko) 2001-07-12
EP0848290A1 (en) 1998-06-17
DE69702828T2 (de) 2000-12-07
EP0848290B1 (en) 2000-08-16
KR19980063926A (ko) 1998-10-07
JPH10213903A (ja) 1998-08-11
CN1185593A (zh) 1998-06-24
CN1118002C (zh) 2003-08-13
DE69702828D1 (de) 2000-09-21
CA2224312A1 (en) 1998-06-10
ES2152067T3 (es) 2001-01-16

Similar Documents

Publication Publication Date Title
TW574628B (en) High resolution positive acting dry film photoresist
JPS63172711A (ja) ポリビニルアセタール、これを含有する複写材料用感光性混合物
JP2015529853A (ja) 二層のネガ型ドライフィルムフォトレジスト
TWI240149B (en) Photosensitive resin composition, photosensitive element comprising the same, process for producing resist pattern, and process for producing printed circuit board
US5981135A (en) High resolution positive acting dry film photoresist
JP2804579B2 (ja) ポジ型感光性電着塗料組成物及びこれを用いた回路板の製造方法
EP0301101B1 (en) Positive photosensitive resin composition
JP2006243726A (ja) 感光性樹脂組成物
KR100922844B1 (ko) 절연막 형성용 감광성 수지 조성물
JPH0389353A (ja) ポジ型感光性樹脂組成物
EP0614120B1 (en) A source of photochemically generated acid for microelectronic photoresists
CN1310731A (zh) 水溶性正性光致抗蚀组合物
JP2824188B2 (ja) 感光性組成物及びパターンの製造方法
CN102782578B (zh) 感光性树脂组合物、感光性干膜及图案形成方法
US4871644A (en) Photoresist compositions with a bis-benzotriazole
CN101315521B (zh) 感光性树脂组合物
JPH0326822B2 (enExample)
JP3251446B2 (ja) 感光性樹脂組成物及び感光性エレメント
JP2001042516A (ja) 積層フィルム及びプリント配線板の製造法
JP2824190B2 (ja) ポジ型電着フォトレジスト組成物及びレジストパターンの製造方法
JP3634216B2 (ja) 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの製造法及びプリント配線板の製造法
JPH103167A (ja) 水溶性感光性組成物
JP3775142B2 (ja) 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの製造法及びプリント配線板の製造法
JP2594053B2 (ja) ポジ型感光性樹脂組成物
JP2002221797A (ja) 積層フィルム及びプリント配線板の製造法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees