CN102782578B - 感光性树脂组合物、感光性干膜及图案形成方法 - Google Patents
感光性树脂组合物、感光性干膜及图案形成方法 Download PDFInfo
- Publication number
- CN102782578B CN102782578B CN201080064710.0A CN201080064710A CN102782578B CN 102782578 B CN102782578 B CN 102782578B CN 201080064710 A CN201080064710 A CN 201080064710A CN 102782578 B CN102782578 B CN 102782578B
- Authority
- CN
- China
- Prior art keywords
- compound
- monomer
- polymer combination
- photosensitive polymer
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-297145 | 2009-12-28 | ||
JP2009297145 | 2009-12-28 | ||
PCT/JP2010/073525 WO2011081127A1 (ja) | 2009-12-28 | 2010-12-27 | 感光性樹脂組成物、感光性ドライフィルムおよびパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102782578A CN102782578A (zh) | 2012-11-14 |
CN102782578B true CN102782578B (zh) | 2016-01-20 |
Family
ID=44226532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080064710.0A Active CN102782578B (zh) | 2009-12-28 | 2010-12-27 | 感光性树脂组合物、感光性干膜及图案形成方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8647806B2 (zh) |
JP (1) | JP5753074B2 (zh) |
KR (1) | KR101831130B1 (zh) |
CN (1) | CN102782578B (zh) |
TW (1) | TWI499864B (zh) |
WO (1) | WO2011081127A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9625812B2 (en) | 2012-07-10 | 2017-04-18 | Micro Process Inc. | Photosensitive resin composition, photosensitive dry film, pattern formation method, printed circuit board, and method for producing same |
CN104007618B (zh) * | 2014-06-18 | 2017-09-29 | 杭州福斯特应用材料股份有限公司 | 一种pcb用高粘附力感光干膜 |
CN107278039A (zh) * | 2016-04-08 | 2017-10-20 | 东莞市斯坦得电子材料有限公司 | 一种用于印制线路板的有机碱干膜退除工艺 |
DE102018210237A1 (de) | 2018-06-22 | 2019-12-24 | Würth Elektronik eiSos Gmbh & Co. KG | Kontakt für Direktsteckverbinder und Direktsteckverbinder |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1768302A (zh) * | 2003-04-01 | 2006-05-03 | Az电子材料美国公司 | 光致抗蚀剂组合物 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0727208B2 (ja) * | 1987-04-20 | 1995-03-29 | 富士写真フイルム株式会社 | 感光性組成物 |
JPH01280748A (ja) * | 1988-05-06 | 1989-11-10 | Fuji Yakuhin Kogyo Kk | ポジ型感光性組成物 |
JPH05107757A (ja) | 1991-10-19 | 1993-04-30 | Canon Inc | 感光性樹脂組成物 |
JPH05107756A (ja) | 1991-10-19 | 1993-04-30 | Canon Inc | 感光性樹脂組成物 |
CA2085868A1 (en) * | 1991-12-25 | 1993-06-26 | Mitsubishi Chemical Corporation | Photosensitive composition |
JPH05224407A (ja) | 1992-02-10 | 1993-09-03 | Fuji Photo Film Co Ltd | ポジ型フオトレジスト組成物 |
JP3203842B2 (ja) * | 1992-11-30 | 2001-08-27 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
US5624781A (en) | 1993-05-28 | 1997-04-29 | Kansai Paint Co., Ltd. | Positive type anionic electrodeposition photo-resist composition and process for pattern formation using said composition |
JP3186923B2 (ja) * | 1993-05-28 | 2001-07-11 | 関西ペイント株式会社 | ポジ型感光性アニオン電着レジスト組成物及びこの組成物を用いたパターンの形成方法 |
JP3361636B2 (ja) * | 1993-12-24 | 2003-01-07 | 富士写真フイルム株式会社 | 放射線感受性樹脂組成物 |
DE69519455T2 (de) * | 1994-08-05 | 2001-06-28 | Sumitomo Chemical Co | Chinondiazidsulfonsäureester und diese enthaltende,positiv arbeitende Photoresistzusammensetzungen |
DE69604114T2 (de) * | 1995-04-10 | 2000-03-02 | Shipley Co | Gemische von photoaktiven Zusammensetzungen enthaltendes Fotoresist |
JPH1031306A (ja) * | 1996-07-18 | 1998-02-03 | Fuji Photo Film Co Ltd | キノンジアジドスルフォン酸エステル系感光剤の製造方法 |
JP2003156843A (ja) | 2001-11-21 | 2003-05-30 | Sumitomo Chem Co Ltd | 感放射線性樹脂組成物 |
JP4063053B2 (ja) | 2002-01-25 | 2008-03-19 | Jsr株式会社 | 2層積層膜およびこれを用いたパターン形成方法 |
CN101182366A (zh) | 2004-12-30 | 2008-05-21 | 财团法人工业技术研究院 | 碱可溶树脂与包含该树脂的感旋光性组合物 |
CN101121762A (zh) | 2006-08-11 | 2008-02-13 | 成都科瑞聚数码科技有限公司 | 一种碱溶性聚合物及其制备方法 |
JP5589187B2 (ja) * | 2008-04-23 | 2014-09-17 | 株式会社 マイクロプロセス | 感光性樹脂組成物およびパターン形成方法 |
KR100913058B1 (ko) * | 2008-08-25 | 2009-08-20 | 금호석유화학 주식회사 | 포지티브형 감광성 수지 조성물, 패턴 형성 방법 및 반도체소자 |
-
2010
- 2010-12-27 CN CN201080064710.0A patent/CN102782578B/zh active Active
- 2010-12-27 WO PCT/JP2010/073525 patent/WO2011081127A1/ja active Application Filing
- 2010-12-27 TW TW099146133A patent/TWI499864B/zh active
- 2010-12-27 KR KR1020127018004A patent/KR101831130B1/ko active IP Right Grant
- 2010-12-27 JP JP2011502575A patent/JP5753074B2/ja active Active
- 2010-12-27 US US13/519,418 patent/US8647806B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1768302A (zh) * | 2003-04-01 | 2006-05-03 | Az电子材料美国公司 | 光致抗蚀剂组合物 |
Also Published As
Publication number | Publication date |
---|---|
JP5753074B2 (ja) | 2015-07-22 |
KR101831130B1 (ko) | 2018-02-26 |
KR20130006426A (ko) | 2013-01-16 |
TW201124798A (en) | 2011-07-16 |
WO2011081127A1 (ja) | 2011-07-07 |
US8647806B2 (en) | 2014-02-11 |
JPWO2011081127A1 (ja) | 2013-05-13 |
TWI499864B (zh) | 2015-09-11 |
CN102782578A (zh) | 2012-11-14 |
US20120301830A1 (en) | 2012-11-29 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: EVERLIGHT CHEMICAL INDUSTRIAL CORPORATION Free format text: FORMER OWNER: EVERLIGHT CHEMICAL INDUSTRIAL CORPORATION MITSUBISHI REIYON CO., LTD. Effective date: 20140903 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140903 Address after: Saitama Prefecture, Japan Applicant after: Micro Process Inc. Applicant after: WIKO, Taiwan, China Address before: Saitama Prefecture, Japan Applicant before: Micro Process Inc. Applicant before: WIKO, Taiwan, China Applicant before: Mitsubishi Reiyon Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant |