JPH10213903A - 高解像ポジティブ型乾燥膜フォトレジスト - Google Patents

高解像ポジティブ型乾燥膜フォトレジスト

Info

Publication number
JPH10213903A
JPH10213903A JP9340012A JP34001297A JPH10213903A JP H10213903 A JPH10213903 A JP H10213903A JP 9340012 A JP9340012 A JP 9340012A JP 34001297 A JP34001297 A JP 34001297A JP H10213903 A JPH10213903 A JP H10213903A
Authority
JP
Japan
Prior art keywords
hydrogen
photoacid generator
binder resin
coor
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9340012A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10213903A5 (enExample
Inventor
Thomas A Koes
エイ.コエス トーマス
Grieg B Beltramo
ビー.ベルトラモ グリエグ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Morton International LLC
Original Assignee
Morton International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/910,188 external-priority patent/US5981135A/en
Application filed by Morton International LLC filed Critical Morton International LLC
Publication of JPH10213903A publication Critical patent/JPH10213903A/ja
Publication of JPH10213903A5 publication Critical patent/JPH10213903A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
  • Chemically Coating (AREA)
JP9340012A 1996-12-10 1997-12-10 高解像ポジティブ型乾燥膜フォトレジスト Pending JPH10213903A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US76303196A 1996-12-10 1996-12-10
US08/763031 1996-12-10
US08/910188 1997-08-13
US08/910,188 US5981135A (en) 1997-08-13 1997-08-13 High resolution positive acting dry film photoresist

Publications (2)

Publication Number Publication Date
JPH10213903A true JPH10213903A (ja) 1998-08-11
JPH10213903A5 JPH10213903A5 (enExample) 2005-07-14

Family

ID=27117220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9340012A Pending JPH10213903A (ja) 1996-12-10 1997-12-10 高解像ポジティブ型乾燥膜フォトレジスト

Country Status (8)

Country Link
EP (1) EP0848290B1 (enExample)
JP (1) JPH10213903A (enExample)
KR (1) KR100278257B1 (enExample)
CN (1) CN1118002C (enExample)
CA (1) CA2224312C (enExample)
DE (1) DE69702828T2 (enExample)
ES (1) ES2152067T3 (enExample)
TW (1) TW574628B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866973B2 (en) 2000-12-04 2005-03-15 Canon Kabushiki Kaisha Photosensitive resin composition, resist composition, fabricating method for patterned substrate, and device
JP2010224582A (ja) * 2002-03-01 2010-10-07 Rohm & Haas Electronic Materials Llc フォトレジスト組成物
JP2011013421A (ja) * 2009-07-01 2011-01-20 Asahi Kasei E-Materials Corp 感光性樹脂組成物及びそれを用いた感光性フィルム
JP2014172932A (ja) * 2013-03-06 2014-09-22 Nagase Chemtex Corp 電子部品保護膜形成用組成物

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
US6255033B1 (en) 1999-07-30 2001-07-03 Creo, Ltd. Positive acting photoresist compositions and imageable element
KR20040035345A (ko) * 2002-10-22 2004-04-29 주식회사 코오롱 샌드블라스트레지스트용 감광성수지조성물 및 이를포함하는 감광성 필름
CN1527136B (zh) * 2003-03-05 2014-02-26 希普利公司 光致抗蚀剂组合物
KR101142631B1 (ko) 2007-12-14 2012-05-10 코오롱인더스트리 주식회사 샌드블라스트 레지스트용 감광성 수지 조성물 및 드라이필름 포토레지스트
SI2784586T1 (sl) * 2013-03-27 2015-11-30 UNIVERZA V MARIBORU Fakulteta za Strojništvo Večdimenzionalni foto tiskani substrati na osnovi monosaharid derivatov, njihovih oligomerov in njih polimerov ter postopek njih proizvodnje
KR101636865B1 (ko) * 2013-09-10 2016-07-06 제일모직 주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
FR3034881B1 (fr) * 2015-04-09 2017-05-05 Univ Claude Bernard Lyon Mise en œuvre de chitosane ou d'alginate en tant que masque de transfert dans des procedes de lithographie et de transfert
JP6809873B2 (ja) * 2015-12-28 2021-01-06 旭化成株式会社 積層体
KR102690556B1 (ko) * 2020-11-05 2024-07-30 삼성에스디아이 주식회사 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
DE102021000478A1 (de) 2021-02-01 2022-08-04 Giesecke+Devrient Currency Technology Gmbh Maskenbelichtungsverfahren, transparente, leitfähige Metallisierung und Pigment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2627571B2 (ja) * 1990-05-31 1997-07-09 富士写真フイルム株式会社 感光性組成物
JPH06342212A (ja) * 1993-04-07 1994-12-13 Matsushita Electric Ind Co Ltd 微細パターン形成用レジストおよび微細パターン形成方法
JP3078153B2 (ja) * 1993-07-08 2000-08-21 富士写真フイルム株式会社 感光性組成物
JPH086252A (ja) * 1994-06-24 1996-01-12 Sony Corp 感光性樹脂組成物

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866973B2 (en) 2000-12-04 2005-03-15 Canon Kabushiki Kaisha Photosensitive resin composition, resist composition, fabricating method for patterned substrate, and device
US7122297B2 (en) 2000-12-04 2006-10-17 Canon Kabushiki Kaisha Photosensitive resin composition, resist composition, fabrication method for patterned substrate, and device
JP2010224582A (ja) * 2002-03-01 2010-10-07 Rohm & Haas Electronic Materials Llc フォトレジスト組成物
KR100998068B1 (ko) 2002-03-01 2010-12-03 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 포토레지스트 조성물
JP2011013421A (ja) * 2009-07-01 2011-01-20 Asahi Kasei E-Materials Corp 感光性樹脂組成物及びそれを用いた感光性フィルム
JP2014172932A (ja) * 2013-03-06 2014-09-22 Nagase Chemtex Corp 電子部品保護膜形成用組成物

Also Published As

Publication number Publication date
TW574628B (en) 2004-02-01
CA2224312C (en) 2001-02-20
KR100278257B1 (ko) 2001-07-12
EP0848290A1 (en) 1998-06-17
DE69702828T2 (de) 2000-12-07
EP0848290B1 (en) 2000-08-16
KR19980063926A (ko) 1998-10-07
CN1185593A (zh) 1998-06-24
CN1118002C (zh) 2003-08-13
DE69702828D1 (de) 2000-09-21
CA2224312A1 (en) 1998-06-10
ES2152067T3 (es) 2001-01-16

Similar Documents

Publication Publication Date Title
US4576902A (en) Process of making and using a positive working photosensitive film resist material
JPH10213903A (ja) 高解像ポジティブ型乾燥膜フォトレジスト
US5981135A (en) High resolution positive acting dry film photoresist
JP2645384B2 (ja) ポジ型感光性樹脂組成物
JP2000227665A (ja) パターン形成方法
JPH0343470A (ja) ポジ型感光性電着塗料組成物及びそれを用いた回路板の製造方法
US3592646A (en) Diazo compounds and photographic elements
EP0614120B1 (en) A source of photochemically generated acid for microelectronic photoresists
JPH0389353A (ja) ポジ型感光性樹脂組成物
JP2824188B2 (ja) 感光性組成物及びパターンの製造方法
JPH04361265A (ja) 剥離液
JP2002287345A (ja) 感光性塗料組成物及びパターンの形成方法
JP3403511B2 (ja) レジストパターン及びエッチングパターンの製造方法
JP3583455B2 (ja) 回路板の製造方法
JP3437179B2 (ja) 感光性樹脂組成物及びこれを用いた感光性エレメント
JP2824190B2 (ja) ポジ型電着フォトレジスト組成物及びレジストパターンの製造方法
JP3971046B2 (ja) ポジ型感光性樹脂組成物及びその用途
JP3921011B2 (ja) ポジ型感熱性樹脂組成物及びそれを用いたレジストパターン形成方法
JPH02311846A (ja) 感光性樹脂組成物及びこれを用いた感光性積層体
JPH07278471A (ja) ポジ型感光性アニオン電着塗料組成物及びそれを用いるパターンの形成方法
JPH103167A (ja) 水溶性感光性組成物
JP2000187319A (ja) ポジ型可視光感光性樹脂組成物及びそれを用いたレジストパタ―ン形成方法
JPH0616978A (ja) ネガ型感光性電着塗料樹脂組成物、これを用いた電着塗装浴及びレジストパターンの製造法
JP2000187325A (ja) ポジ型紫外感光性樹脂組成物及びそれを用いたレジストパタ―ン形成方法
JP3452420B2 (ja) 感光性樹脂組成物及びこれを用いた感光性フィルム

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041125

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041125

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20050825

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050825

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20050825

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20051219

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20070608

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070719

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070727

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20071002

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20071005

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080218